公开(公告)号：US11062908B2

公开(公告)日：2021-07-13

申请号：US16596617

申请日：2019-10-08

申请人： Taiwan Semiconductor Manufacturing Co., Ltd.

发明人： Hong-Ying Lin ,  Cheng-Yi Wu ,  Alan Tu ,  Chung-Liang Cheng ,  Li-Hsuan Chu ,  Ethan Hsiao ,  Hui-Lin Sung ,  Sz-Yuan Hung ,  Sheng-Yung Lo ,  C. W. Chiu ,  Chih-Wei Hsieh ,  Chin-Szu Lee

IPC分类号： H01L21/285 ,  H01L21/768 ,  H01L23/532 ,  H01L29/78 ,  H01L29/417 ,  H01L23/535 ,  H01L29/08 ,  H01L29/66 ,  C23C16/16

摘要： A semiconductor device includes: a fin structure disposed on a substrate; a gate feature that traverses the fin structure to overlay a central portion of the fin structure; a pair of source/drain features, along the fin structure, that are disposed at respective sides of the gate feature; and a plurality of contact structures that are formed of tungsten, wherein a gate electrode of the gate feature and the pair of source/drain features are each directly coupled to a respective one of the plurality of contact structures.

公开(公告)号：US10763116B2

公开(公告)日：2020-09-01

申请号：US15797869

申请日：2017-10-30

申请人： Taiwan Semiconductor Manufacturing Co., Ltd.

发明人： Hong-Ying Lin ,  Cheng-Yi Wu ,  Alan Tu ,  Chung-Liang Cheng ,  Li-Hsuan Chu ,  Ethan Hsiao ,  Hui-Lin Sung ,  Sz-Yuan Hung ,  Sheng-Yung Lo ,  C. W. Chiu ,  Chih-Wei Hsieh ,  Chin-Szu Lee

IPC分类号： H01L21/285 ,  H01L29/66 ,  H01L21/768 ,  H01L29/78 ,  H01L29/08 ,  H01L23/535 ,  H01L23/532 ,  C23C16/16 ,  H01L29/417

摘要： A semiconductor device includes: a fin structure disposed on a substrate; a gate feature that traverses the fin structure to overlay a central portion of the fin structure; a pair of source/drain features, along the fin structure, that are disposed at respective sides of the gate feature; and a plurality of contact structures that are formed of tungsten, wherein a gate electrode of the gate feature and the pair of source/drain features are each directly coupled to a respective one of the plurality of contact structures.