公开(公告)号：US20240096943A1

公开(公告)日：2024-03-21

申请号：US18520346

申请日：2023-11-27

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Chia-Ta Yu ,  Hsiao-Chiu Hsu ,  Feng-Cheng Yang

IPC: H01L29/06 ,  H01L21/762 ,  H01L27/088 ,  H01L29/66 ,  H01L29/78

CPC classification number: H01L29/0649 ,  H01L21/76224 ,  H01L27/0886 ,  H01L29/6681 ,  H01L29/785 ,  H01L2029/7858

Abstract: A semiconductor structure includes semiconductor layers disposed over a substrate and oriented lengthwise in a first direction, a metal gate stack disposed over the semiconductor layers and oriented lengthwise in a second direction perpendicular to the first direction, where the metal gate stack includes a top portion and a bottom portion that is interleaved with the semiconductor layers, source/drain features disposed in the semiconductor layers and adjacent to the metal gate stack, and an isolation structure protruding from the substrate, where the isolation structure is oriented lengthwise along the second direction and spaced from the metal gate stack along the first direction, and where the isolation structure includes a dielectric layer and an air gap.

公开(公告)号：US10727068B2

公开(公告)日：2020-07-28

申请号：US16596518

申请日：2019-10-08

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Hsin-Ying Lin ,  Mei-Yun Wang ,  Hsien-Cheng Wang ,  Fu-Kai Yang ,  Shih-Wen Liu ,  Hsiao-Chiu Hsu

IPC: H01L21/28 ,  H01L29/40 ,  H01L21/033 ,  H01L29/423 ,  H01L29/66 ,  H01L29/49 ,  H01L21/768

Abstract: Semiconductor structures and methods for forming the same are provided. The method includes forming a dummy gate structure and forming a spacer on a lower portion of a sidewall of the dummy gate structure and exposing an upper portion of the sidewall of the dummy gate structure. The method further includes forming a dielectric layer covering the upper portion of the sidewall of the dummy gate structure exposed by the spacer and removing the dummy gate structure to form a tube-shaped trench. The method further includes removing a portion of the dielectric layer to form a cone-shaped trench and forming a gate structure in a bottom portion of the tube-shaped trench. The method further includes forming a hard mask structure in the cone-shaped trench and an upper portion of the tube-shaped trench, and an interface between the hard mask structure and the dielectric layer overlaps the spacer.

公开(公告)号：US11437469B2

公开(公告)日：2022-09-06

申请号：US17198774

申请日：2021-03-11

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Chia-Ta Yu ,  Hsiao-Chiu Hsu ,  Feng-Cheng Yang

IPC: H01L29/06 ,  H01L27/088 ,  H01L21/76 ,  H01L29/66 ,  H01L21/762 ,  H01L29/78

Abstract: A semiconductor structure includes semiconductor layers disposed over a substrate and oriented lengthwise in a first direction, a metal gate stack disposed over the semiconductor layers and oriented lengthwise in a second direction perpendicular to the first direction, where the metal gate stack includes a top portion and a bottom portion that is interleaved with the semiconductor layers, source/drain features disposed in the semiconductor layers and adjacent to the metal gate stack, and an isolation structure protruding from the substrate, where the isolation structure is oriented lengthwise along the second direction and spaced from the metal gate stack along the first direction, and where the isolation structure includes a dielectric layer and an air gap.

公开(公告)号：US11881507B2

公开(公告)日：2024-01-23

申请号：US17868678

申请日：2022-07-19

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Chia-Ta Yu ,  Hsiao-Chiu Hsu ,  Feng-Cheng Yang

IPC: H01L29/06 ,  H01L27/08 ,  H01L21/76 ,  H01L21/762 ,  H01L27/088 ,  H01L29/66 ,  H01L29/78

CPC classification number: H01L29/0649 ,  H01L21/76224 ,  H01L27/0886 ,  H01L29/6681 ,  H01L29/785 ,  H01L2029/7858

Abstract: A semiconductor structure includes semiconductor layers disposed over a substrate and oriented lengthwise in a first direction, a metal gate stack disposed over the semiconductor layers and oriented lengthwise in a second direction perpendicular to the first direction, where the metal gate stack includes a top portion and a bottom portion that is interleaved with the semiconductor layers, source/drain features disposed in the semiconductor layers and adjacent to the metal gate stack, and an isolation structure protruding from the substrate, where the isolation structure is oriented lengthwise along the second direction and spaced from the metal gate stack along the first direction, and where the isolation structure includes a dielectric layer and an air gap.

公开(公告)号：US20220376044A1

公开(公告)日：2022-11-24

申请号：US17868678

申请日：2022-07-19

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Chia-Ta Yu ,  Hsiao-Chiu Hsu ,  Feng-Cheng Yang

IPC: H01L29/06 ,  H01L27/088 ,  H01L29/66 ,  H01L21/762 ,  H01L29/78

Abstract: A semiconductor structure includes semiconductor layers disposed over a substrate and oriented lengthwise in a first direction, a metal gate stack disposed over the semiconductor layers and oriented lengthwise in a second direction perpendicular to the first direction, where the metal gate stack includes a top portion and a bottom portion that is interleaved with the semiconductor layers, source/drain features disposed in the semiconductor layers and adjacent to the metal gate stack, and an isolation structure protruding from the substrate, where the isolation structure is oriented lengthwise along the second direction and spaced from the metal gate stack along the first direction, and where the isolation structure includes a dielectric layer and an air gap.

公开(公告)号：US11244832B2

公开(公告)日：2022-02-08

申请号：US16939465

申请日：2020-07-27

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Hsin-Ying Lin ,  Mei-Yun Wang ,  Hsien-Cheng Wang ,  Fu-Kai Yang ,  Shih-Wen Liu ,  Hsiao-Chiu Hsu

IPC: H01L21/28 ,  H01L29/40 ,  H01L21/033 ,  H01L29/423 ,  H01L29/66 ,  H01L29/49 ,  H01L21/768

Abstract: Semiconductor structures are provided. The semiconductor structure includes a substrate and a metal gate structure formed over the substrate. The semiconductor structure further includes a sealing layer comprising an inner sidewall and an outermost sidewall. In addition, the inner sidewall is in direct contact with the metal gate structure and the outermost sidewall is away from the metal gate structure. The semiconductor structure further includes a mask structure formed over the metal gate structure. In addition, the mask structure has a straight sidewall over the metal gate structure and a sloped sidewall extending from the inner sidewall of the sealing layer and passing over the outmost sidewall of the sealing layer.

公开(公告)号：US20210376072A1

公开(公告)日：2021-12-02

申请号：US17198774

申请日：2021-03-11

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Chia-Ta Yu ,  Hsiao-Chiu Hsu ,  Feng-Cheng Yang

IPC: H01L29/06 ,  H01L27/088 ,  H01L29/78 ,  H01L29/66 ,  H01L21/762

Abstract: A semiconductor structure includes semiconductor layers disposed over a substrate and oriented lengthwise in a first direction, a metal gate stack disposed over the semiconductor layers and oriented lengthwise in a second direction perpendicular to the first direction, where the metal gate stack includes a top portion and a bottom portion that is interleaved with the semiconductor layers, source/drain features disposed in the semiconductor layers and adjacent to the metal gate stack, and an isolation structure protruding from the substrate, where the isolation structure is oriented lengthwise along the second direction and spaced from the metal gate stack along the first direction, and where the isolation structure includes a dielectric layer and an air gap.