Abstract:
Provided is a method for evaluating and decomposing a semiconductor device level for triple pattern lithography in semiconductor manufacturing. The method includes generating a conflict graph and simplifying the conflict graph using various methods to produce a simplified conflict graph which can either be further simplified or evaluated for decomposition validity. The disclosure also provides for applying decomposition validity rules to a simplified conflict graph to determine if the conflict graph represents a semiconductor device layer that is decomposable into three masks. Methods of the disclosure are carried out by a computer and instructions for carrying out the method may be stored on a computer readable storage medium.
Abstract:
The present disclosure relates to a method and apparatus for forming a multiple patterning lithograph (MPL) compliant integrated circuit layout by operating a construction validation check on unassembled IC cells to enforce design restrictions that prevent MPL conflicts after assembly. In some embodiments, the method is performed by generating a plurality of unassembled integrated circuit (IC) cells having a multiple patterning design layer. A construction validation check is performed on the unassembled IC cells to identify violating IC cells having shapes disposed in patterns comprising potential multiple patterning coloring conflicts. Design shapes within a violating IC cell are adjusted to achieve a plurality of violation free IC cells. The plurality of violation free IC cells are then assembled to form an MPL compliant IC layout. Since the MPL compliant IC layout is free of coloring conflicts, a decomposition algorithm can be operated without performing a post assembly color conflict check.
Abstract:
A method includes accessing data representing a layout of a layer of an integrated circuit (IC) having a plurality of polygons defining circuit patterns to be divided among a number (N) of photomasks over a single layer of a semiconductor substrate, where N is greater than two. The method further includes inputting a conflict graph having a plurality of vertices, identifying a first and second vertex, each of which is connected to a third and fourth vertex where the third and fourth vertices are connected to a same edge of a conflict graph, and merging the first and second vertices to form a reduced graph. The method further includes detecting at least one or more vertex in the reduced having a conflict. In one aspect, the method resolves the detected conflict by performing one of pattern shifting, stitch inserting, or re-routing.
Abstract:
A method includes accessing data representing a layout of a layer of an integrated circuit (IC) having a plurality of polygons defining circuit patterns to be divided among a number (N) of photomasks over a single layer of a semiconductor substrate, where N is greater than two. The method further includes inputting a conflict graph having a plurality of vertices, identifying a first and second vertex, each of which is connected to a third and fourth vertex where the third and fourth vertices are connected to a same edge of a conflict graph, and merging the first and second vertices to form a reduced graph. The method further includes detecting at least one or more vertex in the reduced having a conflict. In one aspect, the method resolves the detected conflict by performing one of pattern shifting, stitch inserting, or re-routing.
Abstract:
Provided is a method for evaluating and decomposing a semiconductor device level for triple pattern lithography in semiconductor manufacturing. The method includes generating a conflict graph and simplifying the conflict graph using various methods to produce a simplified conflict graph which can either be further simplified or evaluated for decomposition validity. The disclosure also provides for applying decomposition validity rules to a simplified conflict graph to determine if the conflict graph represents a semiconductor device layer that is decomposable into three masks. Methods of the disclosure are carried out by a computer and instructions for carrying out the method may be stored on a computer readable storage medium.
Abstract:
A method of decomposing a layout for triple pattern lithography generates a first conflict graph from the layout. The method generates a second conflict graph from the first conflict graph, and identifies loops in the second conflict graph as decomposition violations.