公开(公告)号：US20240371725A1

公开(公告)日：2024-11-07

申请号：US18775879

申请日：2024-07-17

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Chih-Hao Chen ,  Hung-Yu Chen ,  Pu Wang ,  Li-Hui Cheng ,  Szu-Wei Lu

IPC: H01L23/373 ,  H01L21/48 ,  H01L23/04 ,  H01L23/31 ,  H01L23/40

Abstract: A method of forming a semiconductor structure includes: attaching a semiconductor device to a first surface of a substrate; placing a thermal interface material (TIM) film over a first side of the semiconductor device distal from the substrate, where the TIM film is pre-formed before the placing, where after the placing, a peripheral portion of the TIM film extends laterally beyond sidewalls of the semiconductor device; and attaching a lid to the first surface of the substrate to form an enclosed space between the lid and the substrate, where after attaching the lid, the semiconductor device and the TIM film are disposed in the enclosed space, where a first side of the TIM film distal from the substrate contacts the lid.

公开(公告)号：US20230378017A1

公开(公告)日：2023-11-23

申请号：US17891634

申请日：2022-08-19

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Ping-Yin Hsieh ,  Pu Wang ,  Li-Hui Cheng ,  Ying-Ching Shih ,  Hung-Yu Chen

IPC: H01L23/367 ,  H01L25/065 ,  H01L23/42 ,  H01L23/373 ,  H01L21/56 ,  H01L23/31

CPC classification number: H01L23/367 ,  H01L25/0652 ,  H01L23/42 ,  H01L23/3736 ,  H01L21/561 ,  H01L21/563 ,  H01L23/3157 ,  H01L2224/16145 ,  H01L24/16

Abstract: An embodiment is a device including a package component including an integrated circuit die and conductive connectors connected to the integrated circuit die, the conductive connectors disposed at a first side of the package component. The device also includes a metal layer on a second side of the package component, the second side being opposite the first side. The device also includes a thermal interface material on the metal layer. The device also includes a lid on the thermal interface material. The device also includes a retaining structure on sidewalls of the package component and the thermal interface material. The device also includes a package substrate connected to the conductive connectors, the lid being adhered to the package substrate.

公开(公告)号：US20230317552A1

公开(公告)日：2023-10-05

申请号：US18328387

申请日：2023-06-02

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Chih-Hao Chen ,  Hung-Yu Chen ,  Pu Wang ,  Li-Hui Cheng ,  Szu-Wei Lu

IPC: H01L23/373 ,  H01L21/48 ,  H01L23/04 ,  H01L23/31 ,  H01L23/40

CPC classification number: H01L23/3737 ,  H01L21/4882 ,  H01L23/04 ,  H01L23/3128 ,  H01L23/4006 ,  H01L2023/4087

Abstract: A method of forming a semiconductor structure includes: attaching a semiconductor device to a first surface of a substrate; placing a thermal interface material (TIM) film over a first side of the semiconductor device distal from the substrate, where the TIM film is pre-formed before the placing, where after the placing, a peripheral portion of the TIM film extends laterally beyond sidewalls of the semiconductor device; and attaching a lid to the first surface of the substrate to form an enclosed space between the lid and the substrate, where after attaching the lid, the semiconductor device and the TIM film are disposed in the enclosed space, where a first side of the TIM film distal from the substrate contacts the lid.

公开(公告)号：US11705381B2

公开(公告)日：2023-07-18

申请号：US17375304

申请日：2021-07-14

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Chih-Hao Chen ,  Hung-Yu Chen ,  Pu Wang ,  Li-Hui Cheng ,  Szu-Wei Lu

IPC: H01L23/373 ,  H01L23/31 ,  H01L23/04 ,  H01L23/40 ,  H01L21/48

CPC classification number: H01L23/3737 ,  H01L21/4882 ,  H01L23/04 ,  H01L23/3128 ,  H01L23/4006 ,  H01L2023/4087

Abstract: A method of forming a semiconductor structure includes: attaching a semiconductor device to a first surface of a substrate; placing a thermal interface material (TIM) film over a first side of the semiconductor device distal from the substrate, where the TIM film is pre-formed before the placing, where after the placing, a peripheral portion of the TIM film extends laterally beyond sidewalls of the semiconductor device; and attaching a lid to the first surface of the substrate to form an enclosed space between the lid and the substrate, where after attaching the lid, the semiconductor device and the TIM film are disposed in the enclosed space, where a first side of the TIM film distal from the substrate contacts the lid.

公开(公告)号：US20220392823A1

公开(公告)日：2022-12-08

申请号：US17375304

申请日：2021-07-14

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Chih-Hao Chen ,  Hung-Yu Chen ,  Pu Wang ,  Li-Hui Cheng ,  Szu-Wei Lu

IPC: H01L23/373 ,  H01L23/31 ,  H01L23/04 ,  H01L23/40 ,  H01L21/48

Abstract: A method of forming a semiconductor structure includes: attaching a semiconductor device to a first surface of a substrate; placing a thermal interface material (TIM) film over a first side of the semiconductor device distal from the substrate, where the TIM film is pre-formed before the placing, where after the placing, a peripheral portion of the TIM film extends laterally beyond sidewalls of the semiconductor device; and attaching a lid to the first surface of the substrate to form an enclosed space between the lid and the substrate, where after attaching the lid, the semiconductor device and the TIM film are disposed in the enclosed space, where a first side of the TIM film distal from the substrate contacts the lid.

公开(公告)号：US12100640B2

公开(公告)日：2024-09-24

申请号：US18328387

申请日：2023-06-02

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Chih-Hao Chen ,  Hung-Yu Chen ,  Pu Wang ,  Li-Hui Cheng ,  Szu-Wei Lu

IPC: H01L23/373 ,  H01L21/48 ,  H01L23/04 ,  H01L23/31 ,  H01L23/40

CPC classification number: H01L23/3737 ,  H01L21/4882 ,  H01L23/04 ,  H01L23/3128 ,  H01L23/4006 ,  H01L2023/4087

Abstract: A method of forming a semiconductor structure includes: attaching a semiconductor device to a first surface of a substrate; placing a thermal interface material (TIM) film over a first side of the semiconductor device distal from the substrate, where the TIM film is pre-formed before the placing, where after the placing, a peripheral portion of the TIM film extends laterally beyond sidewalls of the semiconductor device; and attaching a lid to the first surface of the substrate to form an enclosed space between the lid and the substrate, where after attaching the lid, the semiconductor device and the TIM film are disposed in the enclosed space, where a first side of the TIM film distal from the substrate contacts the lid.