公开(公告)号：US20220328358A1

公开(公告)日：2022-10-13

申请号：US17843694

申请日：2022-06-17

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Cheng-Hsiung Yen ,  Ta-Chun Ma ,  Chien-Chang Su ,  Jung-Jen Chen ,  Pei-Ren Jeng ,  Chii-Horng Li ,  Kei-Wei Chen

IPC: H01L21/8234 ,  H01L21/8238 ,  H01L29/06 ,  H01L29/165 ,  H01L29/10 ,  H01L21/02 ,  H01L21/324 ,  H01L27/092

Abstract: A device is manufactured by providing a semiconductor fin protruding from a major surface of a silicon substrate comprising silicon. A liner and a shallow trench isolation (STI) region are formed adjacent the semiconductor fin. A silicon cap is deposited over the semiconductor fin. The resulting cap consists of crystalline silicon in the portion over the semiconductor fin and consists of amorphous silicon in the portions over the liner and STI region. An HCl etch bake process is performed to remove the portions of amorphous silicon over the liner and the STI region.

公开(公告)号：US11854901B2

公开(公告)日：2023-12-26

申请号：US17843694

申请日：2022-06-17

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Cheng-Hsiung Yen ,  Ta-Chun Ma ,  Chien-Chang Su ,  Jung-Jen Chen ,  Pei-Ren Jeng ,  Chii-Horng Li ,  Kei-Wei Chen

IPC: H01L21/8234 ,  H01L21/8238 ,  H01L29/06 ,  H01L29/165 ,  H01L29/10 ,  H01L21/02 ,  H01L21/324 ,  H01L27/092 ,  H01L29/66 ,  H01L29/78

CPC classification number: H01L21/823431 ,  H01L21/0206 ,  H01L21/0217 ,  H01L21/02068 ,  H01L21/02164 ,  H01L21/02238 ,  H01L21/02532 ,  H01L21/324 ,  H01L21/823481 ,  H01L21/823807 ,  H01L21/823821 ,  H01L21/823878 ,  H01L27/0924 ,  H01L29/0653 ,  H01L29/1037 ,  H01L29/165 ,  H01L29/66795 ,  H01L29/785

Abstract: A device is manufactured by providing a semiconductor fin protruding from a major surface of a silicon substrate comprising silicon. A liner and a shallow trench isolation (STI) region are formed adjacent the semiconductor fin. A silicon cap is deposited over the semiconductor fin. The resulting cap consists of crystalline silicon in the portion over the semiconductor fin and consists of amorphous silicon in the portions over the liner and STI region. An HCl etch bake process is performed to remove the portions of amorphous silicon over the liner and the STI region.

公开(公告)号：US20230383435A1

公开(公告)日：2023-11-30

申请号：US18447493

申请日：2023-08-10

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Li-Ting Wang ,  Jung-Jen Chen ,  Ming-Hua Yu ,  Yee-Chia Yeo

IPC: C30B25/16 ,  C30B25/10

CPC classification number: C30B25/165 ,  C30B25/10

Abstract: In an embodiment, an apparatus includes a first pyrometer and a second pyrometer configured to monitor thermal radiation from a first point and a second point on a backside of a wafer, respectively, a first heating source in a first region and a second heating source in a second region of an epitaxial growth chamber, respectively, where a first controller adjusts an output of the first heating source and the second heating source based upon the monitored thermal radiation from the first point and the second point, respectively, a third pyrometer and a fourth pyrometer configured to monitor thermal radiation from a third point and a fourth point on a frontside of the wafer, respectively, where a second controller adjusts a flow rate of one or more precursors injected into the epitaxial growth chamber based upon the monitored thermal radiation from the first, second, third, and fourth points.

公开(公告)号：US11367660B2

公开(公告)日：2022-06-21

申请号：US17121490

申请日：2020-12-14

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Cheng-Hsiung Yen ,  Ta-Chun Ma ,  Chien-Chang Su ,  Jung-Jen Chen ,  Pei-Ren Jeng ,  Chii-Horng Li ,  Kei-Wei Chen

IPC: H01L21/8234 ,  H01L21/8238 ,  H01L29/06 ,  H01L29/165 ,  H01L29/10 ,  H01L21/02 ,  H01L21/324 ,  H01L27/092

Abstract: A device is manufactured by providing a semiconductor fin protruding from a major surface of a silicon substrate comprising silicon. A liner and a shallow trench isolation (STI) region are formed adjacent the semiconductor fin. A silicon cap is deposited over the semiconductor fin. The resulting cap consists of crystalline silicon in the portion over the semiconductor fin and consists of amorphous silicon in the portions over the liner and STI region. An HCl etch bake process is performed to remove the portions of amorphous silicon over the liner and the STI region.

公开(公告)号：US20230017768A1

公开(公告)日：2023-01-19

申请号：US17377581

申请日：2021-07-16

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Li-Ting Wang ,  Jung-Jen Chen ,  Ming-Hua Yu ,  Yee-Chia Yeo

IPC: C30B25/16 ,  C30B25/10

Abstract: In an embodiment, an apparatus includes a first pyrometer and a second pyrometer configured to monitor thermal radiation from a first point and a second point on a backside of a wafer, respectively, a first heating source in a first region and a second heating source in a second region of an epitaxial growth chamber, respectively, where a first controller adjusts an output of the first heating source and the second heating source based upon the monitored thermal radiation from the first point and the second point, respectively, a third pyrometer and a fourth pyrometer configured to monitor thermal radiation from a third point and a fourth point on a frontside of the wafer, respectively, where a second controller adjusts a flow rate of one or more precursors injected into the epitaxial growth chamber based upon the monitored thermal radiation from the first, second, third, and fourth points.

公开(公告)号：US20210366715A1

公开(公告)日：2021-11-25

申请号：US17396948

申请日：2021-08-09

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Ta-Chun Ma ,  Yi-Cheng Li ,  Pin-Ju Liang ,  Cheng-Po Chau ,  Jung-Jen Chen ,  Pei-Ren Jeng ,  Chii-Horng Li ,  Kei-Wei Chen ,  Cheng-Hsiung Yen

IPC: H01L21/223 ,  H01L29/66 ,  H01L21/311 ,  H01L21/324 ,  H01L21/8238 ,  H01L29/78 ,  H01L27/092

Abstract: In an embodiment, a method includes: forming a first fin extending from a substrate, the substrate including silicon, the first fin including silicon germanium; forming an isolation region around the first fin, an oxide layer being formed on the first fin during formation of the isolation region; removing the oxide layer from the first fin with a hydrogen-based etching process, silicon at a surface of the first fin being terminated with hydrogen after the hydrogen-based etching process; desorbing the hydrogen from the silicon at the surface of the first fin to depassivate the silicon; and exchanging the depassivated silicon at the surface of the first fin with germanium at a subsurface of the first fin.

公开(公告)号：US20210098308A1

公开(公告)日：2021-04-01

申请号：US17121490

申请日：2020-12-14

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Cheng-Hsiung Yen ,  Ta-Chun Ma ,  Chien-Chang Su ,  Jung-Jen Chen ,  Pei-Ren Jeng ,  Chii-Horng Li ,  Kei-Wei Chen

IPC: H01L21/8234 ,  H01L21/8238 ,  H01L29/06 ,  H01L29/165 ,  H01L29/10 ,  H01L21/02 ,  H01L21/324 ,  H01L27/092

Abstract: A device is manufactured by providing a semiconductor fin protruding from a major surface of a silicon substrate comprising silicon. A liner and a shallow trench isolation (STI) region are formed adjacent the semiconductor fin. A silicon cap is deposited over the semiconductor fin. The resulting cap consists of crystalline silicon in the portion over the semiconductor fin and consists of amorphous silicon in the portions over the liner and STI region. An HCl etch bake process is performed to remove the portions of amorphous silicon over the liner and the STI region.