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公开(公告)号:US12074032B2
公开(公告)日:2024-08-27
申请号:US17340766
申请日:2021-06-07
Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor: Meng-Je Chuang , Wan-Chun Kuan , Yi-Wei Chiu , Tzu-Chan Weng
IPC: H01L21/311 , H01J37/32 , H01L21/3065 , H01L21/67 , H01L21/8234 , H01L29/66
CPC classification number: H01L21/31116 , H01J37/32009 , H01J37/3244 , H01L21/3065 , H01L21/67069 , H01L21/67103 , H01L21/67126 , H01L21/6719 , H01L21/67201 , H01J2237/334 , H01L21/823431 , H01L29/66742 , H01L29/66795
Abstract: A chamber door, such as an etch chamber door may be heated during etch processing to, e.g., prevent etching by-products from adhering to the etch chamber door. Such heating of the etch chamber door, however, can impact the processing parameters and result in non-uniform processing, such as non-uniform etching characteristics across a semiconductor wafer, for instance. An insulator, such as an insulating film covering surfaces of the heated door, can reduce or eliminate transmission of heat from the door to a work piece such as a semiconductor wafer and this reduce or eliminate the non-uniformity of the process results.
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公开(公告)号:US20210296135A1
公开(公告)日:2021-09-23
申请号:US17340766
申请日:2021-06-07
Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor: Meng-Je Chuang , Wan-Chun Kuan , Yi-Wei Chiu , Tzu-Chan Weng
IPC: H01L21/311 , H01L21/67 , H01J37/32 , H01L21/3065
Abstract: A chamber door, such as an etch chamber door may be heated during etch processing to, e.g., prevent etching by-products from adhering to the etch chamber door. Such heating of the etch chamber door, however, can impact the processing parameters and result in non-uniform processing, such as non-uniform etching characteristics across a semiconductor wafer, for instance. An insulator, such as an insulating film covering surfaces of the heated door, can reduce or eliminate transmission of heat from the door to a work piece such as a semiconductor wafer and this reduce or eliminate the non-uniformity of the process results.
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