公开(公告)号：US11961884B2

公开(公告)日：2024-04-16

申请号：US17549049

申请日：2021-12-13

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Hsiu-Yung Lin ,  Yen Chuang ,  Min-Hao Hong

IPC: H01L29/94 ,  H01L21/02 ,  H01L29/06 ,  H01L29/76 ,  H01L29/78

CPC classification number: H01L29/0649 ,  H01L21/02252 ,  H01L29/7851

Abstract: The present disclosure describes a semiconductor device with a fill structure. The semiconductor structure includes first and second fin structures on a substrate, an isolation region on the substrate and between the first and second fin structures, a first gate structure disposed on the first fin structure and the isolation region, a second gate structure disposed on the second fin structure and the isolation region, and the fill structure on the isolation region and between the first and second gate structures. The fill structure includes a dielectric structure between the first and second gate structures and an air gap enclosed by the dielectric structure. The air gap is below top surfaces of the first and second fin structures.

公开(公告)号：US10861721B2

公开(公告)日：2020-12-08

申请号：US16265879

申请日：2019-02-01

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： You-Hua Chou ,  Min-Hao Hong ,  Kuan-Chung Chen

IPC: H01L21/67 ,  H01L21/687 ,  G03B21/20 ,  H01L33/08 ,  H01R33/08

Abstract: A method includes delivering a wafer into a process chamber, applying a thermal energy to the wafer by a heat source, and moving the heat source substantially along a longitudinal direction of the heat source with respect to the wafer. An apparatus that performs the method is also disclosed.

公开(公告)号：US10204807B2

公开(公告)日：2019-02-12

申请号：US15616914

申请日：2017-06-07

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： You-Hua Chou ,  Min-Hao Hong ,  Kuan-Chung Chen

IPC: H01L21/67 ,  H01L21/687

Abstract: An apparatus for processing a wafer includes a process chamber, a wafer support, a heat source, and a movable device. The wafer support is in the process chamber. The heat source is in the process chamber. The movable device contacts the heat source, in which the movable device is movable with respect to the wafer support.

公开(公告)号：US09214514B2

公开(公告)日：2015-12-15

申请号：US14080220

申请日：2013-11-14

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD

Inventor： Min-Hao Hong ,  Shiu-Ko Jangjian ,  Chih-Tsung Lee ,  Miao-Cheng Liao

IPC: H01L21/336 ,  H01L21/70 ,  H01L21/8238 ,  H01L27/085 ,  H01L27/092 ,  H01L29/08 ,  H01L29/66 ,  H01L29/78

CPC classification number: H01L29/0847 ,  H01L29/165 ,  H01L29/66636 ,  H01L29/7847 ,  H01L29/7848

Abstract: Embodiments that relate to mechanisms for providing a stable dislocation profile are provided. A semiconductor substrate having a gate stack is provided. An opening is formed adjacent to a side of the gate stack. A first part of an epitaxial growth structure is formed in the opening. A second part of the epitaxial growth structure is formed in the opening. The first part and the second part of the epitaxial growth structure are formed along different directions.

Abstract translation: 提供了与用于提供稳定位错图的机制有关的实施例。 提供具有栅叠层的半导体衬底。 在栅极叠层的一侧形成开口。 在开口中形成外延生长结构的第一部分。 外延生长结构的第二部分形成在开口中。 外延生长结构的第一部分和第二部分沿着不同的方向形成。