公开(公告)号：US20230387003A1

公开(公告)日：2023-11-30

申请号：US18232312

申请日：2023-08-09

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Shih-Wei LIANG ,  Hung-Yi KUO ,  Hao-Yi TSAI ,  Ming-Hung TSENG ,  Hsien-Ming TU

IPC: H01L23/522 ,  H01L23/66 ,  H01L23/498 ,  H01F41/04 ,  H01F41/061 ,  H02J50/12 ,  H01L23/31 ,  H01L23/528

CPC classification number: H01L23/5227 ,  H01L23/66 ,  H01L23/49822 ,  H01F41/04 ,  H01F41/061 ,  H02J50/12 ,  H01L23/3157 ,  H01L23/5223 ,  H01L23/5226 ,  H01L23/528 ,  H01L28/10 ,  H01L28/40 ,  H01L23/5389

Abstract: A method of making a semiconductor device, includes: forming a first molding layer on a substrate; forming a first plurality of vias in the first molding layer; forming a first conductive line over the first molding layer, wherein the first conductive line is laterally disposed over the first molding layer and a first end of the conductive line aligns with and is electrically coupled to a first via of the first plurality of vias; forming a second molding layer above the first molding layer; and forming a second plurality of vias in the second molding layer, wherein a second via of the second plurality of vias aligns with and is electrically coupled to a second end of the conductive line, and wherein the second plurality of vias, the conductive line, and the first plurality of vias are electrically coupled to one another.

公开(公告)号：US20200266664A1

公开(公告)日：2020-08-20

申请号：US16867753

申请日：2020-05-06

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Chen-Hua YU ,  Hao-Yi TSAI ,  Tzu-Sung HUANG ,  Ming-Hung TSENG ,  Hung-Yi KUO

IPC: H02J50/10 ,  H01F38/14 ,  H04B5/00 ,  H02J7/00 ,  H01L23/64 ,  H01L23/538 ,  H01L23/522 ,  H01L23/498 ,  H01L23/31 ,  H01L23/10 ,  H01L21/3205 ,  H01F27/36

Abstract: A semiconductor device package is provided, including a semiconductor device, a molding material, and a conductive slot. The molding material surrounds the semiconductor device. The conductive slot is positioned over the molding material and having an opening and at least two channels connecting the opening to the edges of the conductive slot.

公开(公告)号：US20170317023A1

公开(公告)日：2017-11-02

申请号：US15254135

申请日：2016-09-01

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Chen-Hua YU ,  Hao-Yi TSAI ,  Tzu-Sung HUANG ,  Ming-Hung TSENG ,  Hung-Yi KUO

IPC: H01L23/522 ,  H01L23/06 ,  H01L21/3205 ,  H01L21/56 ,  H02J7/02 ,  H01L23/31

CPC classification number: H02J7/025 ,  H01L21/32051 ,  H01L23/10 ,  H01L23/3121 ,  H01L23/49822 ,  H01L23/5227 ,  H01L23/5389 ,  H01L23/645 ,  H01L2224/04105 ,  H01L2224/19 ,  H01L2224/73267 ,  H01L2924/19042 ,  H01L2924/19105 ,  H02J7/0042 ,  H02J50/10 ,  H04B5/0037 ,  H04B5/0075

Abstract: A method for packaging a semiconductor device used in an electronic apparatus having wireless charging function is provided. The method includes coupling a semiconductor device and a coil over a redistribution layer. The method further includes forming a molding material over the semiconductor device and the coil. The method also includes forming a conductive metal slot over the molding material. An opening is formed on the conductive metal slot for allowing magnetic flux to pass through.

公开(公告)号：US20190020212A1

公开(公告)日：2019-01-17

申请号：US16132688

申请日：2018-09-17

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Chen-Hua YU ,  Hao-Yi TSAI ,  Tzu-Sung HUANG ,  Ming-Hung TSENG ,  Hung-Yi KUO

IPC: H02J7/02 ,  H01L21/3205 ,  H01L23/10 ,  H01L23/31 ,  H01L23/498 ,  H01L23/522 ,  H01L23/538 ,  H01L23/64

Abstract: A semiconductor device package is provided, including a semiconductor device, a magnetic flux generation unit, a molding material, and a conductive slot. The magnetic flux generation unit is surrounding an axis and configured to produce magnetic flux passes through the magnetic flux generation unit. The molding material is surrounding the semiconductor device and the magnetic flux generation unit. The conductive slot is positioned over the molding material, wherein an opening is formed on the conductive slot, and the axis passes through the opening.

公开(公告)号：US20180033725A1

公开(公告)日：2018-02-01

申请号：US15222815

申请日：2016-07-28

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Shih-Wei LIANG ,  Hung-Yi KUO ,  Hao-Yi TSAI ,  Ming-Hung TSENG ,  Hsien-Ming TU

IPC: H01L23/522 ,  H01L49/02 ,  H01L23/31 ,  H02J50/12 ,  H01L23/528

CPC classification number: H01L23/5227 ,  H01L23/3157 ,  H01L23/49822 ,  H01L23/5223 ,  H01L23/5226 ,  H01L23/528 ,  H01L23/5389 ,  H01L23/66 ,  H01L24/20 ,  H01L28/10 ,  H01L28/40 ,  H01L2223/6655 ,  H01L2223/6672 ,  H01L2223/6677 ,  H01L2224/04105 ,  H01L2224/24195 ,  H01L2224/32225 ,  H01L2224/73267 ,  H01L2924/19041 ,  H01L2924/19042 ,  H01L2924/19105 ,  H02J50/12

Abstract: A semiconductor device includes a first molding layer; a second molding layer formed over the first molding layer; a first conductive coil including a first portion continuously formed in the first molding layer and a second portion continuously formed in the second molding layer, wherein the first and the second portions are laterally displaced from each other; and a second conductive coil formed in the second molding layer, wherein the second conductive coil is interweaved with the second portion of the first conductive coil in the second molding layer.