公开(公告)号：US20210083091A1

公开(公告)日：2021-03-18

申请号：US16572679

申请日：2019-09-17

申请人： Taiwan Semiconductor Manufacturing Co., Ltd.

发明人： Yu-Yun Peng ,  Fu-Ting Yen ,  Ting-Ting Chen ,  Keng-Chu Lin ,  Tsu-Hsiu Perng

IPC分类号： H01L29/78 ,  H01L21/02 ,  H01L29/66

摘要： Semiconductor devices and methods of forming the same are provided. A semiconductor device according to the present disclosure includes a first semiconductor channel member and a second semiconductor channel member over the first semiconductor channel member and a porous dielectric feature that includes silicon and nitrogen. In the semiconductor device, the porous dielectric feature is sandwiched between the first and second semiconductor channel members and a density of the porous dielectric feature is smaller than a density of silicon nitride.

公开(公告)号：US10115624B2

公开(公告)日：2018-10-30

申请号：US15197984

申请日：2016-06-30

申请人： Taiwan Semiconductor Manufacturing Co., Ltd.

发明人： De-Wei Yu ,  Tsu-Hsiu Perng ,  Ziwei Fang

IPC分类号： H01L21/762 ,  H01L29/66 ,  H01L21/02 ,  H01L29/06 ,  H01L29/78

摘要： A method of semiconductor device fabrication includes providing a substrate having a hardmask layer thereover. The hardmask layer is patterned to expose the substrate. The substrate is etched through the patterned hardmask layer to form a first fin element and a second fin element extending from the substrate. An isolation feature between the first and second fin elements is formed, where the isolation feature has a first etch rate in a first solution. A laser anneal process is performed to irradiate the isolation feature with a pulsed laser beam. A pulse duration of the pulsed laser beam is adjusted based on a height of the isolation feature. The isolation feature after performing the laser anneal process has a second etch rate less than the first etch rate in the first solution.

公开(公告)号：US20230253240A1

公开(公告)日：2023-08-10

申请号：US18302428

申请日：2023-04-18

申请人： Taiwan Semiconductor Manufacturing Co., Ltd.

发明人： Chin-Hsiang Lin ,  Keng-Chu Lin ,  Shwang-Ming Jeng ,  Teng-Chun Tsai ,  Tsu-Hsiu Perng ,  Fu-Ting Yen

IPC分类号： H01L21/762 ,  H01L21/8238 ,  H01L27/092 ,  H01L29/66 ,  H01L29/78 ,  H01L21/8234

CPC分类号： H01L21/76229 ,  H01L21/823878 ,  H01L21/823821 ,  H01L27/0924 ,  H01L29/66795 ,  H01L29/66545 ,  H01L29/785 ,  H01L21/823892 ,  H01L29/6681 ,  H01L21/823431

摘要： An embodiment method includes depositing a first dielectric film over and along sidewalls of a semiconductor fin, the semiconductor fin extending upwards from a semiconductor substrate. The method further includes depositing a dielectric material over the first dielectric film; recessing the first dielectric film below a top surface of the semiconductor fin to define a dummy fin, the dummy fin comprising an upper portion of the dielectric material; and forming a gate stack over and along sidewalls of the semiconductor fin and the dummy fin.

公开(公告)号：US11545400B2

公开(公告)日：2023-01-03

申请号：US17113431

申请日：2020-12-07

申请人： Taiwan Semiconductor Manufacturing Co., Ltd.

发明人： Tsu-Hsiu Perng ,  Kai-Chieh Yang ,  Zhi-Chang Lin ,  Teng-Chun Tsai ,  Wei-Hao Wu

IPC分类号： H01L21/8238 ,  H01L29/49 ,  H01L29/66 ,  C23C16/04 ,  H01L21/28 ,  H01L29/51 ,  H01L29/78

摘要： A method includes forming a gate stack, which includes a gate dielectric and a metal gate electrode over the gate dielectric. An inter-layer dielectric is formed on opposite sides of the gate stack. The gate stack and the inter-layer dielectric are planarized. The method further includes forming an inhibitor film on the gate stack, with at least a portion of the inter-layer dielectric exposed, selectively depositing a dielectric hard mask on the inter-layer dielectric, with the inhibitor film preventing the dielectric hard mask from being formed thereon, and etching to remove a portion of the gate stack, with the dielectric hard mask acting as a portion of a corresponding etching mask.

公开(公告)号：US12094952B2

公开(公告)日：2024-09-17

申请号：US18297831

申请日：2023-04-10

申请人： Taiwan Semiconductor Manufacturing Co., Ltd.

发明人： Ting-Ting Chen ,  Chen-Han Wang ,  Keng-Chu Lin ,  Shuen-Shin Liang ,  Tsu-Hsiu Perng ,  Tsai-Jung Ho ,  Tsung-Han Ko ,  Tetsuji Ueno ,  Yahru Cheng

IPC分类号： H01L29/49 ,  H01L29/06 ,  H01L29/66

CPC分类号： H01L29/4991 ,  H01L29/0653 ,  H01L29/6656

摘要： The present disclosure describes a method of forming an intermediate spacer structure between a gate structure and a source/drain (S/D) contact structure and removing a top portion of the intermediate spacer structure to form a recess. The intermediate spacer structure includes a first spacer layer, a second spacer layer, and a sacrificial spacer layer between the first spacer layer and the second spacer layer. The method further includes removing the sacrificial spacer layer to form an air gap between the first spacer layer and the second spacer layer and spinning a dielectric layer on the air gap, the first spacer layer, and the second spacer layer to fill in the recess and seal the air gap. The dielectric layer includes raw materials for a spin-on dielectric material.

公开(公告)号：US11855214B2

公开(公告)日：2023-12-26

申请号：US17201673

申请日：2021-03-15

申请人： Taiwan Semiconductor Manufacturing Co., Ltd.

发明人： Yu-Yun Peng ,  Fu-Ting Yen ,  Ting-Ting Chen ,  Keng-Chu Lin ,  Tsu-Hsiu Perng

IPC分类号： H01L29/78 ,  H01L21/02 ,  H01L29/66 ,  H01L21/8234 ,  H01L29/423 ,  H01L29/06

CPC分类号： H01L29/785 ,  H01L21/0217 ,  H01L21/02203 ,  H01L29/6656 ,  H01L29/66545 ,  H01L29/66553 ,  H01L29/66795 ,  H01L21/823468 ,  H01L29/0665 ,  H01L29/42392

摘要： Semiconductor devices and methods of forming the same are provided. A semiconductor device according to the present disclosure includes a first semiconductor channel member and a second semiconductor channel member over the first semiconductor channel member and a porous dielectric feature that includes silicon and nitrogen. In the semiconductor device, the porous dielectric feature is sandwiched between the first and second semiconductor channel members and a density of the porous dielectric feature is smaller than a density of silicon nitride.

公开(公告)号：US11664268B2

公开(公告)日：2023-05-30

申请号：US17373339

申请日：2021-07-12

申请人： Taiwan Semiconductor Manufacturing Co., Ltd.

发明人： Chin-Hsiang Lin ,  Keng-Chu Lin ,  Shwang-Ming Jeng ,  Teng-Chun Tsai ,  Tsu-Hsiu Perng ,  Fu-Ting Yen

IPC分类号： H01L27/088 ,  H01L21/762 ,  H01L21/8238 ,  H01L27/092 ,  H01L29/66 ,  H01L29/78 ,  H01L21/8234

CPC分类号： H01L21/76229 ,  H01L21/823431 ,  H01L21/823821 ,  H01L21/823878 ,  H01L21/823892 ,  H01L27/0924 ,  H01L29/6681 ,  H01L29/66545 ,  H01L29/66795 ,  H01L29/785

摘要： An embodiment method includes depositing a first dielectric film over and along sidewalls of a semiconductor fin, the semiconductor fin extending upwards from a semiconductor substrate. The method further includes depositing a dielectric material over the first dielectric film; recessing the first dielectric film below a top surface of the semiconductor fin to define a dummy fin, the dummy fin comprising an upper portion of the dielectric material; and forming a gate stack over and along sidewalls of the semiconductor fin and the dummy fin.

公开(公告)号：US10950731B1

公开(公告)日：2021-03-16

申请号：US16572679

申请日：2019-09-17

申请人： Taiwan Semiconductor Manufacturing Co., Ltd.

发明人： Yu-Yun Peng ,  Fu-Ting Yen ,  Ting-Ting Chen ,  Keng-Chu Lin ,  Tsu-Hsiu Perng

IPC分类号： H01L21/8232 ,  H01L29/78 ,  H01L21/02 ,  H01L29/66 ,  H01L21/8234 ,  H01L29/423 ,  H01L29/06

摘要： Semiconductor devices and methods of forming the same are provided. A semiconductor device according to the present disclosure includes a first semiconductor channel member and a second semiconductor channel member over the first semiconductor channel member and a porous dielectric feature that includes silicon and nitrogen. In the semiconductor device, the porous dielectric feature is sandwiched between the first and second semiconductor channel members and a density of the porous dielectric feature is smaller than a density of silicon nitride.

公开(公告)号：US20240136438A1

公开(公告)日：2024-04-25

申请号：US18395058

申请日：2023-12-22

申请人： Taiwan Semiconductor Manufacturing Co., Ltd.

发明人： Yu-Yun Peng ,  Fu-Ting Yen ,  Ting-Ting Chen ,  Keng-Chu Lin ,  Tsu-Hsiu Perng

IPC分类号： H01L29/78 ,  H01L21/02 ,  H01L29/66

CPC分类号： H01L29/785 ,  H01L21/0217 ,  H01L21/02203 ,  H01L29/66545 ,  H01L29/66553 ,  H01L29/6656 ,  H01L29/66795 ,  H01L21/823468

摘要： Semiconductor devices and methods of forming the same are provided. A semiconductor device according to the present disclosure includes a first semiconductor channel member and a second semiconductor channel member over the first semiconductor channel member and a porous dielectric feature that includes silicon and nitrogen. In the semiconductor device, the porous dielectric feature is sandwiched between the first and second semiconductor channel members and a density of the porous dielectric feature is smaller than a density of silicon nitride.

公开(公告)号：US11626482B2

公开(公告)日：2023-04-11

申请号：US17192134

申请日：2021-03-04

申请人： Taiwan Semiconductor Manufacturing Co., Ltd.

发明人： Ting-Ting Chen ,  Chen-Han Wang ,  Keng-Chu Lin ,  Shuen-Shin Liang ,  Tsu-Hsiu Perng ,  Tsai-Jung Ho ,  Tsung-Han Ko ,  Tetsuji Ueno ,  Yahru Cheng

IPC分类号： H01L29/06 ,  H01L21/8234 ,  H01L29/66 ,  H01L21/768 ,  H01L29/49

摘要： The present disclosure describes a method of forming an intermediate spacer structure between a gate structure and a source/drain (S/D) contact structure and removing a top portion of the intermediate spacer structure to form a recess. The intermediate spacer structure includes a first spacer layer, a second spacer layer, and a sacrificial spacer layer between the first spacer layer and the second spacer layer. The method further includes removing the sacrificial spacer layer to form an air gap between the first spacer layer and the second spacer layer and spinning a dielectric layer on the air gap, the first spacer layer, and the second spacer layer to fill in the recess and seal the air gap. The dielectric layer includes raw materials for a spin-on dielectric material.