公开(公告)号：US09859137B2

公开(公告)日：2018-01-02

申请号：US14291555

申请日：2014-05-30

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Chun-Cha Kuo ,  Wen-Long Lee ,  Tzu-Chien Cheng ,  Ding-I Liu

IPC: H01L21/67 ,  H01L29/66 ,  H01L21/02 ,  H01L21/28 ,  H01L21/3213 ,  H01L29/49 ,  H01L29/51 ,  H01L21/8238

CPC classification number: H01L21/67109 ,  H01L21/02282 ,  H01L21/02318 ,  H01L21/28088 ,  H01L21/28185 ,  H01L21/32139 ,  H01L21/67115 ,  H01L21/6715 ,  H01L21/823842 ,  H01L29/4966 ,  H01L29/517 ,  H01L29/66545

Abstract: A method for forming a semiconductor device structure and an apparatus for heating a semiconductor substrate are provided. The method includes spin coating a material layer over a semiconductor substrate. The method also includes heating the material layer by using a first heater above the semiconductor substrate and a second heater below the semiconductor substrate.