公开(公告)号：US09048185B2

公开(公告)日：2015-06-02

申请号：US14456082

申请日：2014-08-11

申请人： Taiwan Semiconductor Manufacturing Co., Ltd.

发明人： Chih-Wei Chiang ,  Kuang-Cheng Wu ,  Wen-Long Lee ,  Po-Hsiung Leu ,  Ding-I Liu

IPC分类号： H01L21/283 ,  H01L21/28 ,  H01L21/768 ,  H01L29/423 ,  H01L29/66 ,  H01L21/8234

CPC分类号： H01L21/28132 ,  H01L21/28114 ,  H01L21/76834 ,  H01L21/823425 ,  H01L21/823437 ,  H01L21/823468 ,  H01L21/823481 ,  H01L29/42376 ,  H01L29/66545

摘要： Some embodiments relate to an integrated circuit (IC). The IC includes a semiconductor substrate having an upper surface with a source region and drain region proximate thereto. A channel region is disposed in the substrate between the source region and the drain region. A gate electrode is disposed over the channel region and separated from the channel region by a gate dielectric. Sidewall spacers are formed about opposing sidewalls of the gate electrode. Upper outer edges of the sidewall spacers extend outward beyond corresponding lower outer edges of the sidewall spacers. A liner is disposed about opposing sidewalls of the sidewall spacers and has a first thickness at an upper portion of liner and a second thickness at a lower portion of the liner. The first thickness is less than the second thickness. Other embodiments are also disclosed.

摘要翻译： 一些实施例涉及集成电路（IC）。 IC包括具有上表面的半导体衬底，源表面和漏区附近。 在源极区域和漏极区域之间的衬底中设置沟道区域。 栅电极设置在沟道区上方并通过栅极电介质与沟道区分离。 侧壁间隔件围绕栅电极的相对侧壁形成。 侧壁间隔件的上外边缘向外延伸超过侧壁间隔件的相应的下外边缘。 衬套设置在侧壁间隔物的相对侧壁周围，并且在衬垫的上部具有第一厚度，在衬垫的下部具有第二厚度。 第一厚度小于第二厚度。 还公开了其他实施例。

公开(公告)号：US09859137B2

公开(公告)日：2018-01-02

申请号：US14291555

申请日：2014-05-30

申请人： Taiwan Semiconductor Manufacturing Co., Ltd.

发明人： Chun-Cha Kuo ,  Wen-Long Lee ,  Tzu-Chien Cheng ,  Ding-I Liu

IPC分类号： H01L21/67 ,  H01L29/66 ,  H01L21/02 ,  H01L21/28 ,  H01L21/3213 ,  H01L29/49 ,  H01L29/51 ,  H01L21/8238

CPC分类号： H01L21/67109 ,  H01L21/02282 ,  H01L21/02318 ,  H01L21/28088 ,  H01L21/28185 ,  H01L21/32139 ,  H01L21/67115 ,  H01L21/6715 ,  H01L21/823842 ,  H01L29/4966 ,  H01L29/517 ,  H01L29/66545

摘要： A method for forming a semiconductor device structure and an apparatus for heating a semiconductor substrate are provided. The method includes spin coating a material layer over a semiconductor substrate. The method also includes heating the material layer by using a first heater above the semiconductor substrate and a second heater below the semiconductor substrate.

公开(公告)号：US09349733B2

公开(公告)日：2016-05-24

申请号：US14318079

申请日：2014-06-27

申请人： TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

发明人： Jen-Chi Chang ,  Wen-Long Lee

IPC分类号： H01L27/092 ,  H01L29/78 ,  H01L29/51 ,  H01L29/66 ,  H01L21/8238 ,  H01L21/311

CPC分类号： H01L27/0922 ,  H01L21/31116 ,  H01L21/823468 ,  H01L21/823475 ,  H01L21/823842 ,  H01L21/823864 ,  H01L21/823871 ,  H01L27/088 ,  H01L27/092 ,  H01L29/0847 ,  H01L29/165 ,  H01L29/517 ,  H01L29/66545 ,  H01L29/6656 ,  H01L29/7848

摘要： A semiconductor structure and a method for forming the same are provided. The semiconductor structure includes a first gate structure formed over a substrate. The semiconductor structure includes a first spacer formed on a sidewall of the first gate structure. In addition, a top surface of the first spacer is parallel to a top surface of the substrate.

摘要翻译： 提供半导体结构及其形成方法。 半导体结构包括形成在衬底上的第一栅极结构。 半导体结构包括形成在第一栅极结构的侧壁上的第一间隔物。 此外，第一间隔物的顶表面平行于衬底的顶表面。

公开(公告)号：US20140349471A1

公开(公告)日：2014-11-27

申请号：US14456082

申请日：2014-08-11

申请人： Taiwan Semiconductor Manufacturing Co., Ltd.

发明人： Chih-Wei Chiang ,  Kuang-Cheng Wu ,  Wen-Long Lee ,  Po-Hsiung Leu ,  Ding-I Liu

IPC分类号： H01L21/28 ,  H01L21/8234 ,  H01L29/66

CPC分类号： H01L21/28132 ,  H01L21/28114 ,  H01L21/76834 ,  H01L21/823425 ,  H01L21/823437 ,  H01L21/823468 ,  H01L21/823481 ,  H01L29/42376 ,  H01L29/66545

摘要： Some embodiments relate to an integrated circuit (IC). The IC includes a semiconductor substrate having an upper surface with a source region and drain region proximate thereto. A channel region is disposed in the substrate between the source region and the drain region. A gate electrode is disposed over the channel region and separated from the channel region by a gate dielectric. Sidewall spacers are formed about opposing sidewalls of the gate electrode. Upper outer edges of the sidewall spacers extend outward beyond corresponding lower outer edges of the sidewall spacers. A liner is disposed about opposing sidewalls of the sidewall spacers and has a first thickness at an upper portion of liner and a second thickness at a lower portion of the liner. The first thickness is less than the second thickness. Other embodiments are also disclosed.

摘要翻译： 一些实施例涉及集成电路（IC）。 IC包括具有上表面的半导体衬底，源表面和漏区附近。 在源极区域和漏极区域之间的衬底中设置沟道区域。 栅电极设置在沟道区上方并通过栅极电介质与沟道区分离。 侧壁间隔件围绕栅电极的相对侧壁形成。 侧壁间隔件的上外边缘向外延伸超过侧壁间隔件的相应的下外边缘。 衬套设置在侧壁间隔物的相对侧壁周围，并且在衬垫的上部具有第一厚度，在衬垫的下部具有第二厚度。 第一厚度小于第二厚度。 还公开了其他实施例。