公开(公告)号：US20190027530A1

公开(公告)日：2019-01-24

申请号：US16142681

申请日：2018-09-26

申请人： Taiwan Semiconductor Manufacturing Co., Ltd.

发明人： Wei-Chao Chiu ,  Chih-Chien Wang ,  Feng-Jia Shiu ,  Ching-Sen Kuo ,  Chun-Wei Chang ,  Kai Tzeng

IPC分类号： H01L27/146 ,  H01L21/266 ,  H01L21/768 ,  G03F7/38 ,  H01L21/311 ,  H01L21/027 ,  G03F7/32 ,  G03F7/16 ,  G03F7/40

摘要： A first photoresist pattern and a second photoresist pattern are formed over a substrate. The first photoresist pattern is separated from the second photoresist pattern by a gap. A chemical mixture is coated on the first and second photoresist patterns. The chemical mixture contains a chemical material and surfactant particles mixed into the chemical material. The chemical mixture fills the gap. A baking process is performed on the first and second photoresist patterns, the baking process causing the gap to shrink. At least some surfactant particles are disposed at sidewall boundaries of the gap. A developing process is performed on the first and second photoresist patterns. The developing process removes the chemical mixture in the gap and over the photoresist patterns. The surfactant particles disposed at sidewall boundaries of the gap reduce a capillary effect during the developing process.

公开(公告)号：US11086221B2

公开(公告)日：2021-08-10

申请号：US16983523

申请日：2020-08-03

申请人： Taiwan Semiconductor Manufacturing Co., Ltd.

发明人： Wei-Chao Chiu ,  Chih-Chien Wang ,  Feng-Jia Shiu ,  Ching-Sen Kuo ,  Chun-Wei Chang ,  Kai Tzeng

IPC分类号： G03F7/16 ,  G03F7/38 ,  G03F7/40 ,  H01L21/768 ,  G03F7/26 ,  G03F7/32 ,  H01L21/027 ,  H01L21/266 ,  H01L21/311 ,  H01L27/146

摘要： A first photoresist pattern and a second photoresist pattern are formed over a substrate. The first photoresist pattern is separated from the second photoresist pattern by a gap. A chemical mixture is coated on the first and second photoresist patterns. The chemical mixture contains a chemical material and surfactant particles mixed into the chemical material. The chemical mixture fills the gap. A baking process is performed on the first and second photoresist patterns, the baking process causing the gap to shrink. At least some surfactant particles are disposed at sidewall boundaries of the gap. A developing process is performed on the first and second photoresist patterns. The developing process removes the chemical mixture in the gap and over the photoresist patterns. The surfactant particles disposed at sidewall boundaries of the gap reduce a capillary effect during the developing process.

公开(公告)号：US10546889B2

公开(公告)日：2020-01-28

申请号：US16180390

申请日：2018-11-05

申请人： TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

发明人： Wei-Chao Chiu ,  Chih-Chien Wang ,  Feng-Jia Shiu ,  Ching-Sen Kuo ,  Chun-Wei Chang ,  Kai Tzeng

IPC分类号： H01L27/146

摘要： Implementations of the disclosure provide a method of fabricating an image sensor device. The method includes forming first trenches in a first photoresist layer using a first photomask having a first pattern to expose a first surface of a substrate, directing ions into the exposed first substrate through the first trenches to form first isolation regions in the substrate, removing the first photoresist layer, forming second trenches in a second photoresist layer using a second photomask having a second pattern to expose a second surface of the substrate, the second pattern being shifted diagonally from the first pattern by half mask pitch, directing ions into the exposed second surface through the second trenches to form second isolation regions in the substrate, the first and second isolation regions being alternatingly disposed in the substrate, and the first and second isolation regions defining pixel regions therebetween, and removing the second photoresist layer.

公开(公告)号：US10090357B2

公开(公告)日：2018-10-02

申请号：US15062956

申请日：2016-03-07

申请人： TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

发明人： Wei-Chao Chiu ,  Chih-Chien Wang ,  Feng-Jia Shiu ,  Ching-Sen Kuo ,  Chun-Wei Chang ,  Kai Tzeng

IPC分类号： G03F7/38 ,  H01L27/146 ,  G03F7/16 ,  G03F7/32 ,  H01L21/027 ,  H01L21/266 ,  H01L21/311 ,  H01L21/768

摘要： A first photoresist pattern and a second photoresist pattern are formed over a substrate. The first photoresist pattern is separated from the second photoresist pattern by a gap. A chemical mixture is coated on the first and second photoresist patterns. The chemical mixture contains a chemical material and surfactant particles mixed into the chemical material. The chemical mixture fills the gap. A baking process is performed on the first and second photoresist patterns, the baking process causing the gap to shrink. At least some surfactant particles are disposed at sidewall boundaries of the gap. A developing process is performed on the first and second photoresist patterns. The developing process removes the chemical mixture in the gap and over the photoresist patterns. The surfactant particles disposed at sidewall boundaries of the gap reduce a capillary effect during the developing process.

公开(公告)号：US10734436B2

公开(公告)日：2020-08-04

申请号：US16142681

申请日：2018-09-26

申请人： Taiwan Semiconductor Manufacturing Co., Ltd.

发明人： Wei-Chao Chiu ,  Chih-Chien Wang ,  Feng-Jia Shiu ,  Ching-Sen Kuo ,  Chun-Wei Chang ,  Kai Tzeng

IPC分类号： G03F7/38 ,  H01L27/146 ,  G03F7/40 ,  H01L21/768 ,  G03F7/16 ,  G03F7/32 ,  H01L21/027 ,  H01L21/266 ,  H01L21/311

摘要： A first photoresist pattern and a second photoresist pattern are formed over a substrate. The first photoresist pattern is separated from the second photoresist pattern by a gap. A chemical mixture is coated on the first and second photoresist patterns. The chemical mixture contains a chemical material and surfactant particles mixed into the chemical material. The chemical mixture fills the gap. A baking process is performed on the first and second photoresist patterns, the baking process causing the gap to shrink. At least some surfactant particles are disposed at sidewall boundaries of the gap. A developing process is performed on the first and second photoresist patterns. The developing process removes the chemical mixture in the gap and over the photoresist patterns. The surfactant particles disposed at sidewall boundaries of the gap reduce a capillary effect during the developing process.

公开(公告)号：US11411033B2

公开(公告)日：2022-08-09

申请号：US16818848

申请日：2020-03-13

申请人： TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

发明人： Wei-Chao Chiu ,  Chun-Wei Chang ,  Ching-Sen Kuo ,  Feng-Jia Shiu

IPC分类号： H01L27/146 ,  G03F7/09

摘要： A method includes forming a first photoresist layer on a front side of a device substrate and having first trenches spaced apart from each other. A first implantation process is performed using the first photoresist layer as a mask to form first isolation regions in the device substrate. A second photoresist layer is formed on the front side and has second trenches. A second implantation process is performed using the second photoresist layer as a mask to form second isolation regions in the device substrate and crossing over the first isolation regions. A third photoresist layer is formed on the front side and has third trenches spaced apart from each other. A third implantation process is performed using the third photoresist layer as a mask to form third isolation regions in the device substrate and crossing over the first isolation regions but spaced apart from the second isolation regions.

公开(公告)号：US20190027519A1

公开(公告)日：2019-01-24

申请号：US15652508

申请日：2017-07-18

申请人： Taiwan Semiconductor Manufacturing Co., Ltd.

发明人： Wei-Chao Chiu ,  Kai Tzeng ,  Chih-Chien Wang ,  Chun-Wei Chang ,  Ching-Sen Kuo ,  Feng-Jia Shiu ,  Cheng-Ta Wu

IPC分类号： H01L27/146 ,  H01L21/761 ,  H01L21/027 ,  H01L21/265 ,  G03F7/09 ,  G03F7/095 ,  G03F7/11

摘要： Various examples of a technique for forming a pattern for substrate fabrication are disclosed herein. In an example, a method includes receiving a substrate. A patterned resist is formed on the substrate and has a trench defined therein. A dielectric is deposited on the patterned resist and within the trench such that the dielectric narrows a width of the trench to further define the trench. A fabrication process is performed on a region of the substrate underlying the trench defined by the dielectric.

公开(公告)号：US10186542B1

公开(公告)日：2019-01-22

申请号：US15652508

申请日：2017-07-18

申请人： Taiwan Semiconductor Manufacturing Co., Ltd.

发明人： Wei-Chao Chiu ,  Kai Tzeng ,  Chih-Chien Wang ,  Chun-Wei Chang ,  Ching-Sen Kuo ,  Feng-Jia Shiu ,  Cheng-Ta Wu

IPC分类号： H01L27/00 ,  H01L27/146 ,  H01L21/761 ,  H01L21/027 ,  H01L21/265 ,  G03F7/09 ,  G03F7/095 ,  G03F7/11 ,  G03F7/16 ,  G03F7/20 ,  G03F7/38 ,  G03F7/32

摘要： Various examples of a technique for forming a pattern for substrate fabrication are disclosed herein. In an example, a method includes receiving a substrate. A patterned resist is formed on the substrate and has a trench defined therein. A dielectric is deposited on the patterned resist and within the trench such that the dielectric narrows a width of the trench to further define the trench. A fabrication process is performed on a region of the substrate underlying the trench defined by the dielectric.

公开(公告)号：US11996432B2

公开(公告)日：2024-05-28

申请号：US17871985

申请日：2022-07-25

申请人： TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

发明人： Wei-Chao Chiu ,  Chun-Wei Chang ,  Ching-Sen Kuo ,  Feng-Jia Shiu

IPC分类号： H01L27/146 ,  G03F7/09

CPC分类号： H01L27/1463 ,  H01L27/14609 ,  H01L27/14685 ,  H01L27/14687 ,  G03F7/094

摘要： A method includes performing a first lithography process using a first pattern of a first photomask to form a first photoresist pattern on a front side of a device substrate; performing a first implantation process using the first pattern as a mask to form first isolation regions in the device substrate; after performing the first implantation process, performing a second lithography process using a second pattern of a second photomask to form a second photoresist pattern on the front side of the device substrate, the second pattern being shifted from the first pattern by a distance less than the first pitch and in the first direction; performing a second implantation process using the second photoresist pattern as a mask to form second isolation regions in the device substrate and spaced apart from the first isolation regions; and forming pixels between the first and second isolation regions.

公开(公告)号：US10121811B1

公开(公告)日：2018-11-06

申请号：US15686916

申请日：2017-08-25

申请人： Taiwan Semiconductor Manufacturing Co., Ltd.

发明人： Wei-Chao Chiu ,  Chih-Chien Wang ,  Feng-Jia Shiu ,  Ching-Sen Kuo ,  Chun-Wei Chang ,  Kai Tzeng

IPC分类号： H01L21/00 ,  H01L27/146

摘要： Implementations of the disclosure provide a method of fabricating an image sensor device. The method includes forming first trenches in a first photoresist layer using a first photomask having a first pattern to expose a first surface of a substrate, directing ions into the exposed first substrate through the first trenches to form first isolation regions in the substrate, removing the first photoresist layer, forming second trenches in a second photoresist layer using a second photomask having a second pattern to expose a second surface of the substrate, the second pattern being shifted diagonally from the first pattern by half mask pitch, directing ions into the exposed second surface through the second trenches to form second isolation regions in the substrate, the first and second isolation regions being alternatingly disposed in the substrate, and the first and second isolation regions defining pixel regions therebetween, and removing the second photoresist layer.