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公开(公告)号：US12176422B2
公开(公告)日：2024-12-24
申请号：US18361540
申请日：2023-07-28
Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor： Tsu-Hui Su , Chun-Hsiang Fan , Yu-Wen Wang , Ming-Hsi Yeh , Kuo-Bin Huang
IPC: H01L29/66 , H01L21/306 , H01L21/66 , H01L21/762 , H01L21/8238
Abstract: A method includes forming isolation regions extending into a semiconductor substrate. A semiconductor strip is between the isolation regions. The method further includes recessing the isolation regions so that a top portion of the semiconductor strip protrudes higher than top surfaces of the isolation regions to form a semiconductor fin, measuring a fin width of the semiconductor fin, generating an etch recipe based on the fin width, and performing a thinning process on the semiconductor fin using the etching recipe.
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公开(公告)号：US20240387709A1
公开(公告)日：2024-11-21
申请号：US18787192
申请日：2024-07-29
Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor： Ssu-Yu Liao , Tsu-Hui Su , Chun-Hsiang Fan , Yu-Wen Wang , Ming-Hsi Yeh , Kuo-Bin Huang
IPC: H01L29/66 , H01L21/02 , H01L21/8238 , H01L27/092 , H01L29/06 , H01L29/08 , H01L29/10 , H01L29/161 , H01L29/423 , H01L29/78 , H01L29/786
Abstract: Methods for improving profiles of channel regions in semiconductor devices and semiconductor devices formed by the same are disclosed. In an embodiment, a method includes forming a semiconductor fin over a semiconductor substrate, the semiconductor fin including germanium, a germanium concentration of a first portion of the semiconductor fin being greater than a germanium concentration of a second portion of the semiconductor fin, a first distance between the first portion and a major surface of the semiconductor substrate being less than a second distance between the second portion and the major surface of the semiconductor substrate; and trimming the semiconductor fin, the first portion of the semiconductor fin being trimmed at a greater rate than the second portion of the semiconductor fin.
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公开(公告)号：US20230147848A1
公开(公告)日：2023-05-11
申请号：US18151089
申请日：2023-01-06
Applicant: Taiwan Semiconductor Manufacturing Co, Ltd.
Inventor： Tsu-Hui Su , Ssu-Yu Liao , Chun-Hsiang Fan , Kuo-Bin Huang
IPC: H01L29/66 , H01L21/306 , H01L21/8238 , H01L21/762 , H01L21/66
CPC classification number: H01L29/66795 , H01L29/66545 , H01L21/30604 , H01L21/823878 , H01L21/76224 , H01L21/823821 , H01L22/12
Abstract: A method includes depositing a silicon layer over a semiconductor region, forming dielectric isolation regions extending into the silicon layer and the semiconductor region, and recessing the dielectric isolation regions. A first portion of the silicon layer and a second portion of the semiconductor region are between the dielectric isolation regions, and protrude higher than top surfaces of the dielectric isolation regions to form a semiconductor fin. The semiconductor fin is thinned, and after the first semiconductor fin is thinned, the first portion of the silicon layer remains. A gate stack is formed on the semiconductor fin.
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公开(公告)号：US20210391449A1
公开(公告)日：2021-12-16
申请号：US16899119
申请日：2020-06-11
Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor： Ssu-Yu Liao , Tsu-Hui Su , Chun-Hsiang Fan , Yu-Wen Wang , Ming-Hsi Yeh , Kuo-Bin Huang
IPC: H01L29/66 , H01L27/092 , H01L29/06 , H01L29/423 , H01L29/786 , H01L29/08 , H01L29/161 , H01L29/10 , H01L29/78 , H01L21/02 , H01L21/8238
Abstract: Methods for improving profiles of channel regions in semiconductor devices and semiconductor devices formed by the same are disclosed. In an embodiment, a method includes forming a semiconductor fin over a semiconductor substrate, the semiconductor fin including germanium, a germanium concentration of a first portion of the semiconductor fin being greater than a germanium concentration of a second portion of the semiconductor fin, a first distance between the first portion and a major surface of the semiconductor substrate being less than a second distance between the second portion and the major surface of the semiconductor substrate; and trimming the semiconductor fin, the first portion of the semiconductor fin being trimmed at a greater rate than the second portion of the semiconductor fin.
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公开(公告)号：US11133200B2
公开(公告)日：2021-09-28
申请号：US15797676
申请日：2017-10-30
Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor： Chun-Liang Tai , Chun-Hsiang Fan , Kuo-Bin Huang , Ming-Hsi Yeh
Abstract: A method of processing a semiconductor substrate is provided. The semiconductor substrate may be placed on a spin chuck with a plurality of holding members, each holding member including a pin having a sloped portion to provide a gap between an upper edge of the substrate and the pin. Thereafter, one or more treatment fluids may be dispensed over the substrate.
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Patent Agency Ranking
公开(公告)号：US11923437B2
公开(公告)日：2024-03-05
申请号：US17452178
申请日：2021-10-25
Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor： Tsu-Hui Su , Chun-Hsiang Fan , Yu-Wen Wang , Ming-Hsi Yeh , Kuo-Bin Huang
IPC: H01L29/66 , H01L21/306 , H01L21/66 , H01L21/762 , H01L21/8238
CPC classification number: H01L29/66795 , H01L21/30604 , H01L21/76224 , H01L21/823821 , H01L21/823878 , H01L22/12 , H01L29/66545
Abstract: A method includes forming isolation regions extending into a semiconductor substrate. A semiconductor strip is between the isolation regions. The method further includes recessing the isolation regions so that a top portion of the semiconductor strip protrudes higher than top surfaces of the isolation regions to form a semiconductor fin, measuring a fin width of the semiconductor fin, generating an etch recipe based on the fin width, and performing a thinning process on the semiconductor fin using the etching recipe.
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公开(公告)号：US20190165139A1
公开(公告)日：2019-05-30
申请号：US15964398
申请日：2018-04-27
Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor： Wei-Han Fan , Wei-Yuan Lu , Yu-Lin Yang , Chun-Hsiang Fan , Sai-Hooi Yeong
IPC: H01L29/66 , H01L29/08 , H01L21/02 , H01L21/265 , H01L21/311 , H01L21/3065 , H01L29/78 , H01L21/225
Abstract: A method includes providing a structure having a substrate and a fin extending from the substrate, wherein the fin includes a first semiconductor material and has a source region, a channel region, and a drain region for a transistor; forming a gate stack over the channel region; performing a surface treatment to the fin in the source and drain regions, thereby converting an outer portion of the fin in the source and drain regions into a different material other than the first semiconductor material; etching the converted outer portion of the fin in the source and drain regions, thereby reducing a width of the fin in the source and drain regions; and depositing an epitaxial layer over the fin in the source and drain regions.
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公开(公告)号：US12191380B2
公开(公告)日：2025-01-07
申请号：US17814185
申请日：2022-07-21
Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor： Ssu-Yu Liao , Tsu-Hui Su , Chun-Hsiang Fan , Yu-Wen Wang , Ming-Hsi Yeh , Kuo-Bin Huang
IPC: H01L29/66 , H01L21/02 , H01L21/8238 , H01L27/092 , H01L29/06 , H01L29/08 , H01L29/10 , H01L29/161 , H01L29/423 , H01L29/78 , H01L29/786
Abstract: Methods for improving profiles of channel regions in semiconductor devices and semiconductor devices formed by the same are disclosed. In an embodiment, a method includes forming a semiconductor fin over a semiconductor substrate, the semiconductor fin including germanium, a germanium concentration of a first portion of the semiconductor fin being greater than a germanium concentration of a second portion of the semiconductor fin, a first distance between the first portion and a major surface of the semiconductor substrate being less than a second distance between the second portion and the major surface of the semiconductor substrate; and trimming the semiconductor fin, the first portion of the semiconductor fin being trimmed at a greater rate than the second portion of the semiconductor fin.
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公开(公告)号：US11424347B2
公开(公告)日：2022-08-23
申请号：US16899119
申请日：2020-06-11
Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor： Ssu-Yu Liao , Tsu-Hui Su , Chun-Hsiang Fan , Yu-Wen Wang , Ming-Hsi Yeh , Kuo-Bin Huang
IPC: H01L29/66 , H01L29/165 , H01L29/78 , H01L29/161 , H01L21/02 , H01L21/8238 , H01L27/092 , H01L29/06 , H01L29/08 , H01L29/10 , H01L29/423 , H01L29/786
Abstract: Methods for improving profiles of channel regions in semiconductor devices and semiconductor devices formed by the same are disclosed. In an embodiment, a method includes forming a semiconductor fin over a semiconductor substrate, the semiconductor fin including germanium, a germanium concentration of a first portion of the semiconductor fin being greater than a germanium concentration of a second portion of the semiconductor fin, a first distance between the first portion and a major surface of the semiconductor substrate being less than a second distance between the second portion and the major surface of the semiconductor substrate; and trimming the semiconductor fin, the first portion of the semiconductor fin being trimmed at a greater rate than the second portion of the semiconductor fin.
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公开(公告)号：US10658221B2
公开(公告)日：2020-05-19
申请号：US15812112
申请日：2017-11-14
Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor： Wang-Hua Lin , Chun-Liang Tai , Chun-Hsiang Fan , Ming-Hsi Yeh , Kuo-Bin Huang
IPC: H01L21/687 , H01L21/67 , B08B3/08 , B08B3/10
Abstract: A method for cleaning a semiconductor wafer is provided. The method includes placing a semiconductor wafer over a supporter arranged around a central axis of a spin base. The method further includes securing the semiconductor wafer using a clamping member positioned on the supporter. The movement of the semiconductor wafer during the placement of the semiconductor wafer over the supporter is guided by a guiding member located over the clamping member. The method also includes spinning the semiconductor wafer by rotating the spin base about the central axis. In addition, the method includes dispensing a processing liquid over the semiconductor wafer.
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