公开(公告)号：US20210257218A1

公开(公告)日：2021-08-19

申请号：US17234119

申请日：2021-04-19

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Wan Hsuan Hsu ,  Jao Sheng Huang ,  Yen-Chiu Kuo ,  Yu-Li Cheng ,  Ya Tzu Chen ,  Neng-Jye Yang ,  Chun-Li Chou

IPC: H01L21/311 ,  H01L21/02 ,  H01L21/67 ,  H01L21/687

Abstract: An apparatus, semiconductor device and method of manufacture are presented, wherein a hard mask layer and one or more etch stop layers are etched in an etching chamber. In an embodiment the semiconductor device is placed on a mounting platform at a first height and an etch process is performed, then the semiconductor device is moved to a second height within the chamber and a second etch process is performed, with the rotational speed of the semiconductor device reduced during movements in order to reduce the chance of cross contamination.

公开(公告)号：US20240395559A1

公开(公告)日：2024-11-28

申请号：US18789403

申请日：2024-07-30

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Wan Hsuan Hsu ,  Jao Sheng Huang ,  Yen-Chiu Kuo ,  Yu-Li Cheng ,  Ya Tzu Chen ,  Neng-Jye Yang ,  Chun-Li Chou

IPC: H01L21/311 ,  H01L21/02 ,  H01L21/67 ,  H01L21/687

Abstract: An apparatus, semiconductor device and method of manufacture are presented, wherein a hard mask layer and one or more etch stop layers are etched in an etching chamber. In an embodiment the semiconductor device is placed on a mounting platform at a first height and an etch process is performed, then the semiconductor device is moved to a second height within the chamber and a second etch process is performed, with the rotational speed of the semiconductor device reduced during movements in order to reduce the chance of cross contamination.

公开(公告)号：US20240021431A1

公开(公告)日：2024-01-18

申请号：US18361027

申请日：2023-07-28

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Wan Hsuan Hsu ,  Jao Sheng Huang ,  Yen-Chiu Kuo ,  Yu-Li Cheng ,  Ya Tzu Chen ,  Neng-Jye Yang ,  Chun-Li Chou

IPC: H01L21/311 ,  H01L21/02 ,  H01L21/67 ,  H01L21/687

CPC classification number: H01L21/31111 ,  H01L21/02178 ,  H01L21/02186 ,  H01L21/31144 ,  H01L21/0206 ,  H01L21/6708 ,  H01L21/68764

Abstract: An apparatus, semiconductor device and method of manufacture are presented, wherein a hard mask layer and one or more etch stop layers are etched in an etching chamber. In an embodiment the semiconductor device is placed on a mounting platform at a first height and an etch process is performed, then the semiconductor device is moved to a second height within the chamber and a second etch process is performed, with the rotational speed of the semiconductor device reduced during movements in order to reduce the chance of cross contamination.

公开(公告)号：US12112953B2

公开(公告)日：2024-10-08

申请号：US18361027

申请日：2023-07-28

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Wan Hsuan Hsu ,  Jao Sheng Huang ,  Yen-Chiu Kuo ,  Yu-Li Cheng ,  Ya Tzu Chen ,  Neng-Jye Yang ,  Chun-Li Chou

IPC: H01L21/67 ,  H01L21/02 ,  H01L21/311 ,  H01L21/68 ,  H01L21/687

CPC classification number: H01L21/31111 ,  H01L21/0206 ,  H01L21/02178 ,  H01L21/02186 ,  H01L21/31144 ,  H01L21/6708 ,  H01L21/68764

Abstract: An apparatus, semiconductor device and method of manufacture are presented, wherein a hard mask layer and one or more etch stop layers are etched in an etching chamber. In an embodiment the semiconductor device is placed on a mounting platform at a first height and an etch process is performed, then the semiconductor device is moved to a second height within the chamber and a second etch process is performed, with the rotational speed of the semiconductor device reduced during movements in order to reduce the chance of cross contamination.

公开(公告)号：US11776818B2

公开(公告)日：2023-10-03

申请号：US17234119

申请日：2021-04-19

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Wan Hsuan Hsu ,  Jao Sheng Huang ,  Yen-Chiu Kuo ,  Yu-Li Cheng ,  Ya Tzu Chen ,  Neng-Jye Yang ,  Chun-Li Chou

IPC: H01L21/67 ,  H01L21/311 ,  H01L21/02 ,  H01L21/687

CPC classification number: H01L21/31111 ,  H01L21/0206 ,  H01L21/02178 ,  H01L21/02186 ,  H01L21/31144 ,  H01L21/6708 ,  H01L21/68764

Abstract: An apparatus, semiconductor device and method of manufacture are presented, wherein a hard mask layer and one or more etch stop layers are etched in an etching chamber. In an embodiment the semiconductor device is placed on a mounting platform at a first height and an etch process is performed, then the semiconductor device is moved to a second height within the chamber and a second etch process is performed, with the rotational speed of the semiconductor device reduced during movements in order to reduce the chance of cross contamination.