公开(公告)号：US20210257218A1

公开(公告)日：2021-08-19

申请号：US17234119

申请日：2021-04-19

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Wan Hsuan Hsu ,  Jao Sheng Huang ,  Yen-Chiu Kuo ,  Yu-Li Cheng ,  Ya Tzu Chen ,  Neng-Jye Yang ,  Chun-Li Chou

IPC: H01L21/311 ,  H01L21/02 ,  H01L21/67 ,  H01L21/687

Abstract: An apparatus, semiconductor device and method of manufacture are presented, wherein a hard mask layer and one or more etch stop layers are etched in an etching chamber. In an embodiment the semiconductor device is placed on a mounting platform at a first height and an etch process is performed, then the semiconductor device is moved to a second height within the chamber and a second etch process is performed, with the rotational speed of the semiconductor device reduced during movements in order to reduce the chance of cross contamination.

公开(公告)号：US12112953B2

公开(公告)日：2024-10-08

申请号：US18361027

申请日：2023-07-28

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Wan Hsuan Hsu ,  Jao Sheng Huang ,  Yen-Chiu Kuo ,  Yu-Li Cheng ,  Ya Tzu Chen ,  Neng-Jye Yang ,  Chun-Li Chou

IPC: H01L21/67 ,  H01L21/02 ,  H01L21/311 ,  H01L21/68 ,  H01L21/687

CPC classification number: H01L21/31111 ,  H01L21/0206 ,  H01L21/02178 ,  H01L21/02186 ,  H01L21/31144 ,  H01L21/6708 ,  H01L21/68764

Abstract: An apparatus, semiconductor device and method of manufacture are presented, wherein a hard mask layer and one or more etch stop layers are etched in an etching chamber. In an embodiment the semiconductor device is placed on a mounting platform at a first height and an etch process is performed, then the semiconductor device is moved to a second height within the chamber and a second etch process is performed, with the rotational speed of the semiconductor device reduced during movements in order to reduce the chance of cross contamination.

公开(公告)号：US11776818B2

公开(公告)日：2023-10-03

申请号：US17234119

申请日：2021-04-19

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Wan Hsuan Hsu ,  Jao Sheng Huang ,  Yen-Chiu Kuo ,  Yu-Li Cheng ,  Ya Tzu Chen ,  Neng-Jye Yang ,  Chun-Li Chou

IPC: H01L21/67 ,  H01L21/311 ,  H01L21/02 ,  H01L21/687

CPC classification number: H01L21/31111 ,  H01L21/0206 ,  H01L21/02178 ,  H01L21/02186 ,  H01L21/31144 ,  H01L21/6708 ,  H01L21/68764

Abstract: An apparatus, semiconductor device and method of manufacture are presented, wherein a hard mask layer and one or more etch stop layers are etched in an etching chamber. In an embodiment the semiconductor device is placed on a mounting platform at a first height and an etch process is performed, then the semiconductor device is moved to a second height within the chamber and a second etch process is performed, with the rotational speed of the semiconductor device reduced during movements in order to reduce the chance of cross contamination.

公开(公告)号：US11282750B2

公开(公告)日：2022-03-22

申请号：US17010995

申请日：2020-09-03

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Wan Hsuan Hsu ,  I-Hsiu Wang ,  Yean-Zhaw Chen ,  Cheng-Wei Chang ,  Yu Shih Wang ,  Hsin-Yan Lu ,  Yi-Wei Chiu

IPC: H01L21/8234 ,  H01L29/417 ,  H01L21/768 ,  H01L29/66 ,  H01L21/311 ,  H01L29/78 ,  H01L21/02 ,  H01L21/027 ,  H01L27/02 ,  H01L29/08 ,  H01L27/088

Abstract: An apparatus includes a first source and a common drain and on opposite sides of a first gate surrounded by a first gate spacer, a second source and the common drain on opposite sides of a second gate surrounded by a second gate spacer, a first protection layer formed along a sidewall of the first gate spacer, wherein a top surface of the first protection layer has a first slope, a second protection layer formed along a sidewall of the second gate spacer, wherein a top surface of the second protection layer has a second slope, a lower drain contact between the first gate and the second gate and an upper drain contact over the lower drain contact and between the first gate and the second gate, wherein at least a portion of the upper drain contact is in contact with the first slope and the second slope.

公开(公告)号：US20240395559A1

公开(公告)日：2024-11-28

申请号：US18789403

申请日：2024-07-30

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Wan Hsuan Hsu ,  Jao Sheng Huang ,  Yen-Chiu Kuo ,  Yu-Li Cheng ,  Ya Tzu Chen ,  Neng-Jye Yang ,  Chun-Li Chou

IPC: H01L21/311 ,  H01L21/02 ,  H01L21/67 ,  H01L21/687

Abstract: An apparatus, semiconductor device and method of manufacture are presented, wherein a hard mask layer and one or more etch stop layers are etched in an etching chamber. In an embodiment the semiconductor device is placed on a mounting platform at a first height and an etch process is performed, then the semiconductor device is moved to a second height within the chamber and a second etch process is performed, with the rotational speed of the semiconductor device reduced during movements in order to reduce the chance of cross contamination.

公开(公告)号：US20240021431A1

公开(公告)日：2024-01-18

申请号：US18361027

申请日：2023-07-28

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Wan Hsuan Hsu ,  Jao Sheng Huang ,  Yen-Chiu Kuo ,  Yu-Li Cheng ,  Ya Tzu Chen ,  Neng-Jye Yang ,  Chun-Li Chou

IPC: H01L21/311 ,  H01L21/02 ,  H01L21/67 ,  H01L21/687

CPC classification number: H01L21/31111 ,  H01L21/02178 ,  H01L21/02186 ,  H01L21/31144 ,  H01L21/0206 ,  H01L21/6708 ,  H01L21/68764

Abstract: An apparatus, semiconductor device and method of manufacture are presented, wherein a hard mask layer and one or more etch stop layers are etched in an etching chamber. In an embodiment the semiconductor device is placed on a mounting platform at a first height and an etch process is performed, then the semiconductor device is moved to a second height within the chamber and a second etch process is performed, with the rotational speed of the semiconductor device reduced during movements in order to reduce the chance of cross contamination.