公开(公告)号：US09728533B2

公开(公告)日：2017-08-08

申请号：US14578746

申请日：2014-12-22

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Chun-Li Chou ,  Shao-Yen Ku ,  Pei-Hung Chen ,  Jui-Ping Chuang

IPC: H01L29/78 ,  H01L27/088 ,  C11D7/32 ,  C11D7/34 ,  C11D11/00 ,  H01L21/8238 ,  H01L21/02 ,  H01L27/092 ,  H01L29/06 ,  H01L29/66 ,  H01L29/165

CPC classification number: H01L27/088 ,  C11D7/3209 ,  C11D7/3281 ,  C11D7/34 ,  C11D11/0047 ,  H01L21/02063 ,  H01L21/823814 ,  H01L21/823828 ,  H01L27/092 ,  H01L29/0653 ,  H01L29/165 ,  H01L29/66583 ,  H01L29/6659 ,  H01L29/66636 ,  H01L29/7833 ,  H01L29/7842 ,  H01L29/7848

Abstract: Some embodiments relate to a manufacturing method for a semiconductor device. In this method, a semiconductor workpiece, which includes a metal gate electrode thereon, is provided. An opening is formed in the semiconductor workpiece to expose a surface of the metal gate. Formation of the opening leaves a polymeric residue on the workpiece. To remove the polymeric residue from the workpiece, a cleaning solution that includes an organic alkali component is used. Other embodiments related to a semiconductor device resulting from the method.

公开(公告)号：US09117760B2

公开(公告)日：2015-08-25

申请号：US13753823

申请日：2013-01-30

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Yu-Yen Hsu ,  Shao-Yen Ku ,  Chun-Li Chou ,  Tsai-Pao Su

IPC: B44C1/22 ,  H01L21/306 ,  H01L21/67 ,  H01L21/02

CPC classification number: H01L21/30604 ,  H01L21/02057 ,  H01L21/30608 ,  H01L21/67017 ,  H01L21/67051 ,  H01L21/6708

Abstract: A wet chemical processing method and apparatus for use in semiconductor manufacturing and in other applications, is provided. The method and apparatus provide for energizing a processing liquid such as a cleaning or etching liquid using ultrasonic, megasonic or other energy waves or by combining the liquid with a pressurized gas to form a pressurized spray, or using both. The energized, pressurized fluid is directed to a substrate surface using a fluid delivery system and overcomes any surface tensions associated with liquids, solids, or air and enables the processing liquid to completely fill any holes such as contact holes, via holes or trenches, formed on the semiconductor substrate.

Abstract translation: 提供了一种用于半导体制造和其它应用的湿式化学处理方法和装置。 该方法和装置提供使用超声波，兆声波或其他能量波激发诸如清洁或蚀刻液体的处理液体，或通过将液体与加压气体组合以形成加压喷雾，或者使用两者。 带电的加压流体使用流体输送系统被引导到基底表面，并克服与液体，固体或空气相关联的任何表面张力，并且使处理液能够完全填充任何孔，例如形成的接触孔，通孔或沟槽 在半导体衬底上。

公开(公告)号：US12112953B2

公开(公告)日：2024-10-08

申请号：US18361027

申请日：2023-07-28

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Wan Hsuan Hsu ,  Jao Sheng Huang ,  Yen-Chiu Kuo ,  Yu-Li Cheng ,  Ya Tzu Chen ,  Neng-Jye Yang ,  Chun-Li Chou

IPC: H01L21/67 ,  H01L21/02 ,  H01L21/311 ,  H01L21/68 ,  H01L21/687

CPC classification number: H01L21/31111 ,  H01L21/0206 ,  H01L21/02178 ,  H01L21/02186 ,  H01L21/31144 ,  H01L21/6708 ,  H01L21/68764

Abstract: An apparatus, semiconductor device and method of manufacture are presented, wherein a hard mask layer and one or more etch stop layers are etched in an etching chamber. In an embodiment the semiconductor device is placed on a mounting platform at a first height and an etch process is performed, then the semiconductor device is moved to a second height within the chamber and a second etch process is performed, with the rotational speed of the semiconductor device reduced during movements in order to reduce the chance of cross contamination.

公开(公告)号：US11776818B2

公开(公告)日：2023-10-03

申请号：US17234119

申请日：2021-04-19

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Wan Hsuan Hsu ,  Jao Sheng Huang ,  Yen-Chiu Kuo ,  Yu-Li Cheng ,  Ya Tzu Chen ,  Neng-Jye Yang ,  Chun-Li Chou

IPC: H01L21/67 ,  H01L21/311 ,  H01L21/02 ,  H01L21/687

CPC classification number: H01L21/31111 ,  H01L21/0206 ,  H01L21/02178 ,  H01L21/02186 ,  H01L21/31144 ,  H01L21/6708 ,  H01L21/68764

Abstract: An apparatus, semiconductor device and method of manufacture are presented, wherein a hard mask layer and one or more etch stop layers are etched in an etching chamber. In an embodiment the semiconductor device is placed on a mounting platform at a first height and an etch process is performed, then the semiconductor device is moved to a second height within the chamber and a second etch process is performed, with the rotational speed of the semiconductor device reduced during movements in order to reduce the chance of cross contamination.

公开(公告)号：US20210257218A1

公开(公告)日：2021-08-19

申请号：US17234119

申请日：2021-04-19

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Wan Hsuan Hsu ,  Jao Sheng Huang ,  Yen-Chiu Kuo ,  Yu-Li Cheng ,  Ya Tzu Chen ,  Neng-Jye Yang ,  Chun-Li Chou

IPC: H01L21/311 ,  H01L21/02 ,  H01L21/67 ,  H01L21/687

Abstract: An apparatus, semiconductor device and method of manufacture are presented, wherein a hard mask layer and one or more etch stop layers are etched in an etching chamber. In an embodiment the semiconductor device is placed on a mounting platform at a first height and an etch process is performed, then the semiconductor device is moved to a second height within the chamber and a second etch process is performed, with the rotational speed of the semiconductor device reduced during movements in order to reduce the chance of cross contamination.

公开(公告)号：US09048089B2

公开(公告)日：2015-06-02

申请号：US13762500

申请日：2013-02-08

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Yu-Yen Hsu ,  Shao-Yen Ku ,  Chun-Li Chou

IPC: F27D11/00 ,  H01L21/02 ,  H05B1/02 ,  B08B3/00

CPC classification number: H01L21/02076 ,  H01L21/67051 ,  H05B1/0233

Abstract: Some embodiments relate to methods and apparatus for providing a homogeneous wafer temperature profile in a wafer cleaning tool without introducing unwanted particles onto the wafer. In some embodiments, a disclosed wafer cleaning tool has a processing chamber configured to house a semiconductor wafer. A dispensing arm provides a high temperature cleaning solution to the semiconductor wafer. A heating cup is located within the processing chamber at a position that is around the perimeter of the semiconductor wafer. The heating cup generates heat that increases the temperature of outer edges of the semiconductor wafer by a greater amount than a temperature of a center of the semiconductor wafer, thereby homogenizing an internal temperature profile of the semiconductor wafer.

Abstract translation: 一些实施例涉及用于在晶片清洁工具中提供均匀晶片温度分布而不将不期望的颗粒引入到晶片上的方法和装置。 在一些实施例中，公开的晶片清洁工具具有被配置为容纳半导体晶片的处理室。 分配臂为半导体晶片提供高温清洁溶液。 加热杯位于处理室内的位于半导体晶片周边周围的位置。 加热杯产生比半导体晶片的中心的温度更大的量使半导体晶片的外边缘的温度升高的热量，从而均匀化半导体晶片的内部温度分布。

公开(公告)号：US20150108578A1

公开(公告)日：2015-04-23

申请号：US14578746

申请日：2014-12-22

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Chun-Li Chou ,  Shao-Yen Ku ,  Pei-Hung Chen ,  Jui-Ping Chuang

IPC: H01L27/088 ,  H01L29/78 ,  H01L27/092 ,  H01L29/06

CPC classification number: H01L27/088 ,  C11D7/3209 ,  C11D7/3281 ,  C11D7/34 ,  C11D11/0047 ,  H01L21/02063 ,  H01L21/823814 ,  H01L21/823828 ,  H01L27/092 ,  H01L29/0653 ,  H01L29/165 ,  H01L29/66583 ,  H01L29/6659 ,  H01L29/66636 ,  H01L29/7833 ,  H01L29/7842 ,  H01L29/7848

Abstract: Some embodiments relate to a manufacturing method for a semiconductor device. In this method, a semiconductor workpiece, which includes a metal gate electrode thereon, is provided. An opening is formed in the semiconductor workpiece to expose a surface of the metal gate. Formation of the opening leaves a polymeric residue on the workpiece. To remove the polymeric residue from the workpiece, a cleaning solution that includes an organic alkali component is used. Other embodiments related to a semiconductor device resulting from the method.

Abstract translation: 一些实施例涉及半导体器件的制造方法。 在该方法中，提供了包括其上的金属栅电极的半导体工件。 在半导体工件中形成开口以暴露金属栅极的表面。 开口的形成在工件上留下聚合物残留物。 为了从工件中除去聚合物残渣，使用包含有机碱组分的清洁溶液。 与由该方法产生的半导体器件相关的其它实施例。

公开(公告)号：US20240395559A1

公开(公告)日：2024-11-28

申请号：US18789403

申请日：2024-07-30

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Wan Hsuan Hsu ,  Jao Sheng Huang ,  Yen-Chiu Kuo ,  Yu-Li Cheng ,  Ya Tzu Chen ,  Neng-Jye Yang ,  Chun-Li Chou

IPC: H01L21/311 ,  H01L21/02 ,  H01L21/67 ,  H01L21/687

Abstract: An apparatus, semiconductor device and method of manufacture are presented, wherein a hard mask layer and one or more etch stop layers are etched in an etching chamber. In an embodiment the semiconductor device is placed on a mounting platform at a first height and an etch process is performed, then the semiconductor device is moved to a second height within the chamber and a second etch process is performed, with the rotational speed of the semiconductor device reduced during movements in order to reduce the chance of cross contamination.

公开(公告)号：US20240021431A1

公开(公告)日：2024-01-18

申请号：US18361027

申请日：2023-07-28

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Wan Hsuan Hsu ,  Jao Sheng Huang ,  Yen-Chiu Kuo ,  Yu-Li Cheng ,  Ya Tzu Chen ,  Neng-Jye Yang ,  Chun-Li Chou

IPC: H01L21/311 ,  H01L21/02 ,  H01L21/67 ,  H01L21/687

CPC classification number: H01L21/31111 ,  H01L21/02178 ,  H01L21/02186 ,  H01L21/31144 ,  H01L21/0206 ,  H01L21/6708 ,  H01L21/68764

Abstract: An apparatus, semiconductor device and method of manufacture are presented, wherein a hard mask layer and one or more etch stop layers are etched in an etching chamber. In an embodiment the semiconductor device is placed on a mounting platform at a first height and an etch process is performed, then the semiconductor device is moved to a second height within the chamber and a second etch process is performed, with the rotational speed of the semiconductor device reduced during movements in order to reduce the chance of cross contamination.

公开(公告)号：US20140224785A1

公开(公告)日：2014-08-14

申请号：US13762500

申请日：2013-02-08

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： Yu-Yen Hsu ,  Shao-Yen Ku ,  Chun-Li Chou

IPC: H01L21/02 ,  H05B1/00

CPC classification number: H01L21/02076 ,  H01L21/67051 ,  H05B1/0233

Abstract: Some embodiments relate to methods and apparatus for providing a homogeneous wafer temperature profile in a wafer cleaning tool without introducing unwanted particles onto the wafer. In some embodiments, a disclosed wafer cleaning tool has a processing chamber configured to house a semiconductor wafer. A dispensing arm provides a high temperature cleaning solution to the semiconductor wafer. A heating cup is located within the processing chamber at a position that is around the perimeter of the semiconductor wafer. The heating cup generates heat that increases the temperature of outer edges of the semiconductor wafer by a greater amount than a temperature of a center of the semiconductor wafer, thereby homogenizing an internal temperature profile of the semiconductor wafer.

Abstract translation: 一些实施例涉及用于在晶片清洁工具中提供均匀晶片温度分布而不将不期望的颗粒引入到晶片上的方法和装置。 在一些实施例中，公开的晶片清洁工具具有被配置为容纳半导体晶片的处理室。 分配臂为半导体晶片提供高温清洁溶液。 加热杯位于处理室内的位于半导体晶片周边周围的位置。 加热杯产生比半导体晶片的中心的温度更大的量使半导体晶片的外边缘的温度升高的热量，从而均匀化半导体晶片的内部温度分布。