公开(公告)号：US12188686B2

公开(公告)日：2025-01-07

申请号：US17733657

申请日：2022-04-29

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Chia-Wei Wu ,  Hao Yang ,  Hsiao-Chieh Chou ,  Chun-Hung Chao ,  Jao Sheng Huang ,  Neng-Jye Yang ,  Kuo-Bin Huang

IPC: F24F9/00 ,  H01L21/67 ,  H01L21/687

Abstract: The present disclosure is at least directed to utilizing air curtain devices to form air curtains to separate and isolate areas in which respective workpieces are stored from a transfer compartment within a workpiece processing apparatus. The transfer compartment of the workpiece processing apparatus includes a robot configured to transfer or transport ones of the workpieces to and from these respective storage areas through the transfer compartment and to and from a tool compartment. A tool is present in the tool compartment for processing and refining the respective workpieces. Clean dry air (CDA) may be circulated through the respective storage areas. The air curtains formed by the air curtain devices and the circulation of CDA through the respective storage areas reduces the likelihood of the generation of defects, damages, and degradation of the workpieces when present within the workpiece processing apparatus.

公开(公告)号：US20210257218A1

公开(公告)日：2021-08-19

申请号：US17234119

申请日：2021-04-19

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Wan Hsuan Hsu ,  Jao Sheng Huang ,  Yen-Chiu Kuo ,  Yu-Li Cheng ,  Ya Tzu Chen ,  Neng-Jye Yang ,  Chun-Li Chou

IPC: H01L21/311 ,  H01L21/02 ,  H01L21/67 ,  H01L21/687

Abstract: An apparatus, semiconductor device and method of manufacture are presented, wherein a hard mask layer and one or more etch stop layers are etched in an etching chamber. In an embodiment the semiconductor device is placed on a mounting platform at a first height and an etch process is performed, then the semiconductor device is moved to a second height within the chamber and a second etch process is performed, with the rotational speed of the semiconductor device reduced during movements in order to reduce the chance of cross contamination.

公开(公告)号：US20240395559A1

公开(公告)日：2024-11-28

申请号：US18789403

申请日：2024-07-30

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Wan Hsuan Hsu ,  Jao Sheng Huang ,  Yen-Chiu Kuo ,  Yu-Li Cheng ,  Ya Tzu Chen ,  Neng-Jye Yang ,  Chun-Li Chou

IPC: H01L21/311 ,  H01L21/02 ,  H01L21/67 ,  H01L21/687

Abstract: An apparatus, semiconductor device and method of manufacture are presented, wherein a hard mask layer and one or more etch stop layers are etched in an etching chamber. In an embodiment the semiconductor device is placed on a mounting platform at a first height and an etch process is performed, then the semiconductor device is moved to a second height within the chamber and a second etch process is performed, with the rotational speed of the semiconductor device reduced during movements in order to reduce the chance of cross contamination.

公开(公告)号：US20240021431A1

公开(公告)日：2024-01-18

申请号：US18361027

申请日：2023-07-28

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Wan Hsuan Hsu ,  Jao Sheng Huang ,  Yen-Chiu Kuo ,  Yu-Li Cheng ,  Ya Tzu Chen ,  Neng-Jye Yang ,  Chun-Li Chou

IPC: H01L21/311 ,  H01L21/02 ,  H01L21/67 ,  H01L21/687

CPC classification number: H01L21/31111 ,  H01L21/02178 ,  H01L21/02186 ,  H01L21/31144 ,  H01L21/0206 ,  H01L21/6708 ,  H01L21/68764

Abstract: An apparatus, semiconductor device and method of manufacture are presented, wherein a hard mask layer and one or more etch stop layers are etched in an etching chamber. In an embodiment the semiconductor device is placed on a mounting platform at a first height and an etch process is performed, then the semiconductor device is moved to a second height within the chamber and a second etch process is performed, with the rotational speed of the semiconductor device reduced during movements in order to reduce the chance of cross contamination.

公开(公告)号：US12112953B2

公开(公告)日：2024-10-08

申请号：US18361027

申请日：2023-07-28

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Wan Hsuan Hsu ,  Jao Sheng Huang ,  Yen-Chiu Kuo ,  Yu-Li Cheng ,  Ya Tzu Chen ,  Neng-Jye Yang ,  Chun-Li Chou

IPC: H01L21/67 ,  H01L21/02 ,  H01L21/311 ,  H01L21/68 ,  H01L21/687

CPC classification number: H01L21/31111 ,  H01L21/0206 ,  H01L21/02178 ,  H01L21/02186 ,  H01L21/31144 ,  H01L21/6708 ,  H01L21/68764

Abstract: An apparatus, semiconductor device and method of manufacture are presented, wherein a hard mask layer and one or more etch stop layers are etched in an etching chamber. In an embodiment the semiconductor device is placed on a mounting platform at a first height and an etch process is performed, then the semiconductor device is moved to a second height within the chamber and a second etch process is performed, with the rotational speed of the semiconductor device reduced during movements in order to reduce the chance of cross contamination.

公开(公告)号：US11776818B2

公开(公告)日：2023-10-03

申请号：US17234119

申请日：2021-04-19

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Wan Hsuan Hsu ,  Jao Sheng Huang ,  Yen-Chiu Kuo ,  Yu-Li Cheng ,  Ya Tzu Chen ,  Neng-Jye Yang ,  Chun-Li Chou

IPC: H01L21/67 ,  H01L21/311 ,  H01L21/02 ,  H01L21/687

CPC classification number: H01L21/31111 ,  H01L21/0206 ,  H01L21/02178 ,  H01L21/02186 ,  H01L21/31144 ,  H01L21/6708 ,  H01L21/68764

Abstract: An apparatus, semiconductor device and method of manufacture are presented, wherein a hard mask layer and one or more etch stop layers are etched in an etching chamber. In an embodiment the semiconductor device is placed on a mounting platform at a first height and an etch process is performed, then the semiconductor device is moved to a second height within the chamber and a second etch process is performed, with the rotational speed of the semiconductor device reduced during movements in order to reduce the chance of cross contamination.