公开(公告)号：US20230298934A1

公开(公告)日：2023-09-21

申请号：US18303839

申请日：2023-04-20

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： Te-Chih HSIUNG ,  Yi-Chun CHANG ,  Jyun-De WU ,  Yi-Chen WANG ,  Yuan-Tien TU ,  Huan-Just LIN

IPC: H01L21/768 ,  H01L23/522 ,  H01L23/532

CPC classification number: H01L21/76826 ,  H01L21/76802 ,  H01L21/76804 ,  H01L21/76831 ,  H01L21/76832 ,  H01L23/5226 ,  H01L23/53295 ,  H01L21/31116 ,  H01L21/76877

Abstract: A semiconductor device includes a gate structure, source/drain regions, source/drain contacts, a gate dielectric cap, an etch stop layer, and a gate contact. The gate structure is over a substrate. The source/drain regions are at opposite sides of the gate structure. The source/drain contacts are over the source/drain regions, respectively. The gate dielectric cap is over the gate structure and has opposite sidewalls interfacing the source/drain contacts.

公开(公告)号：US20240395607A1

公开(公告)日：2024-11-28

申请号：US18789354

申请日：2024-07-30

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： Te-Chih HSIUNG ,  Yi-Chun CHANG ,  Jyun-De WU ,  Yi-Chen WANG ,  Yuan-Tien TU ,  Huan-Just LIN

IPC: H01L21/768 ,  H01L21/311 ,  H01L23/522 ,  H01L23/532

Abstract: A semiconductor device includes source/drain contacts, a gate structure, a gate dielectric cap, an etch stop layer, and a gate contact. The source/drain contacts are over a substrate. The gate structure is laterally between the source/drain contacts. The gate dielectric cap is over the gate structure and in contact with the source/drain contacts. The etch stop layer is over the source/drain contacts and the gate dielectric cap. The etch stop layer has an oxidized region directly above the gate dielectric cap. The gate contact extends through the etch stop layer and the gate dielectric cap to the gate structure. The gate contact and the oxidized region of the etch stop layer form an interface perpendicular to the substrate.

公开(公告)号：US20220102202A1

公开(公告)日：2022-03-31

申请号：US17181768

申请日：2021-02-22

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： Te-Chih HSIUNG ,  Yi-Chun CHANG ,  Jyun-De WU ,  Yi-Chen WANG ,  Yuan-Tien TU ,  Huan-Just LIN

IPC: H01L21/768 ,  H01L23/522 ,  H01L23/532

Abstract: A method comprises forming a gate structure over a semiconductor substrate; forming an etch stop layer over the gate structure and an ILD layer over the etch stop layer; performing a first etching process to form a gate contact opening extending through the ILD layer into the etch stop layer, resulting in a sidewall of the etch stop layer being exposed in the gate contact opening; oxidizing the exposed sidewall of the etch stop layer; after oxidizing the exposed sidewall of the etch stop layer, performing a second etching process to deepen the gate contact opening; and forming a gate contact in the deepened gate contact opening.

公开(公告)号：US20150176153A1

公开(公告)日：2015-06-25

申请号：US14510488

申请日：2014-10-09

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Yi-Chao CHANG ,  Pang-Ping LO ,  Yi-Chen WANG ,  Yung-Long CHEN ,  Chun-Feng HSU

IPC: C30B23/00 ,  C30B25/16 ,  C30B25/14

CPC classification number: C30B25/165 ,  C23C16/448 ,  C23C16/45561 ,  C30B25/14 ,  Y10T137/776 ,  Y10T137/7761

Abstract: A gas-supply system includes a gas container filled with gas, a gas flow controller coupled to the gas container via a first tube, and an operation device electrically connected to the gas flow controller. The gas-supply system further includes a pressure transducer installed on a second tube connected to the gas flow controller and configured to generate a pressure signal to the operation device according to the pressure of the gas in the second tube. The operation device is configured to generate a control signal to the gas flow controller according the pressure signal, and the gas flow controller is configured to adjust the flow rate of the gas in the second tube according to the control signal.

Abstract translation: 气体供给系统包括填充有气体的气体容器，经由第一管连接到气体容器的气体流量控制器，以及与气体流量控制器电连接的操作装置。 气体供给系统还包括安装在与气体流量控制器连接的第二管上的压力传感器，其构造成根据第二管中的气体的压力向操作装置产生压力信号。 操作装置被配置为根据压力信号向气体流量控制器产生控制信号，并且气体流量控制器被配置为根据控制信号调节第二管中的气体的流量。