公开(公告)号：US11822237B2

公开(公告)日：2023-11-21

申请号：US17071004

申请日：2020-10-15

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： Ming-Hui Weng ,  Chen-Yu Liu ,  Chih-Cheng Liu ,  Yi-Chen Kuo ,  Jia-Lin Wei ,  Yen-Yu Chen ,  Jr-Hung Li ,  Yahru Cheng ,  Chi-Ming Yang ,  Tze-Liang Lee ,  Ching-Yu Chang

IPC: G03F7/004 ,  H01L21/033 ,  G03F7/00

CPC classification number: G03F7/004 ,  G03F7/0035 ,  H01L21/0332

Abstract: A method of manufacturing a semiconductor device includes forming a photoresist layer over a substrate, including combining a first precursor and a second precursor in a vapor state to form a photoresist material, and depositing the photoresist material over the substrate. A protective layer is formed over the photoresist layer. The photoresist layer is selectively exposed to actinic radiation through the protective layer to form a latent pattern in the photoresist layer. The protective layer is removed, and the latent pattern is developed by applying a developer to the selectively exposed photoresist layer to form a pattern.

公开(公告)号：US20230369048A1

公开(公告)日：2023-11-16

申请号：US18227231

申请日：2023-07-27

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： Jia-Lin WEI ,  Ming-Hui Weng ,  Chih-Cheng Liu ,  Yi-Chen Kuo ,  Yen-Yu Chen ,  Yahru Cheng ,  Jr-Hung Li ,  Ching-Yu Chang ,  Tze-Liang Lee ,  Chi-Ming Yang

IPC: H01L21/033 ,  H01L21/308 ,  G03F7/00 ,  G03F1/22

CPC classification number: H01L21/0332 ,  H01L21/3081 ,  G03F7/70033 ,  G03F1/22 ,  H01L21/0334

Abstract: A method of manufacturing semiconductor device includes forming a multilayer photoresist structure including a metal-containing photoresist over a substrate. The multilayer photoresist structure includes two or more metal-containing photoresist layers having different physical parameters. The metal-containing photoresist is a reaction product of a first precursor and a second precursor, and each layer of the multilayer photoresist structure is formed using different photoresist layer formation parameters. The different photoresist layer formation parameters are one or more selected from the group consisting of the first precursor, an amount of the first precursor, the second precursor, an amount of the second precursor, a length of time each photoresist layer formation operation, and heating conditions of the photoresist layers. The multilayer photoresist structure is selectively exposed to actinic radiation to form a latent pattern, and the latent pattern is developed by applying developer to the selectively exposed multilayer photoresist structure to form the pattern.

公开(公告)号：US11784046B2

公开(公告)日：2023-10-10

申请号：US17150356

申请日：2021-01-15

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： Jia-Lin Wei ,  Ming-Hui Weng ,  Chih-Cheng Liu ,  Yi-Chen Kuo ,  Yen-Yu Chen ,  Yahru Cheng ,  Jr-Hung Li ,  Ching-Yu Chang ,  Tze-Liang Lee ,  Chi-Ming Yang

IPC: H01L21/033 ,  H01L21/308 ,  G03F7/20 ,  G03F1/22 ,  G03F7/00

CPC classification number: H01L21/0332 ,  G03F1/22 ,  G03F7/70033 ,  H01L21/0334 ,  H01L21/3081

Abstract: A method of manufacturing semiconductor device includes forming a multilayer photoresist structure including a metal-containing photoresist over a substrate. The multilayer photoresist structure includes two or more metal-containing photoresist layers having different physical parameters. The metal-containing photoresist is a reaction product of a first precursor and a second precursor, and each layer of the multilayer photoresist structure is formed using different photoresist layer formation parameters. The different photoresist layer formation parameters are one or more selected from the group consisting of the first precursor, an amount of the first precursor, the second precursor, an amount of the second precursor, a length of time each photoresist layer formation operation, and heating conditions of the photoresist layers. The multilayer photoresist structure is selectively exposed to actinic radiation to form a latent pattern, and the latent pattern is developed by applying developer to the selectively exposed multilayer photoresist structure to form the pattern.

公开(公告)号：US12002675B2

公开(公告)日：2024-06-04

申请号：US17156365

申请日：2021-01-22

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： Yen-Yu Chen ,  Chih-Cheng Liu ,  Yi-Chen Kuo ,  Jr-Hung Li ,  Tze-Liang Lee ,  Ming-Hui Weng ,  Yahru Cheng

IPC: H01L21/027 ,  H01L21/308 ,  H01L21/311

CPC classification number: H01L21/0274 ,  H01L21/3086 ,  H01L21/31144

Abstract: A method of manufacturing a semiconductor device includes forming a photoresist layer over a substrate and forming a dehydrated film over the photoresist layer. The photoresist layer is selectively exposed to actinic radiation to form an exposed portion and an unexposed portion of the photoresist layer. The photoresist layer is developed to remove the unexposed portion of the photoresist layer and a first portion of the dehydrated film over the unexposed portion of the photoresist layer. In an embodiment, the method includes etching the substrate by using the exposed portion of the photoresist layer as a mask.

公开(公告)号：US11705332B2

公开(公告)日：2023-07-18

申请号：US17150403

申请日：2021-01-15

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： Yi-Chen Kuo ,  Chih-Cheng Liu ,  Ming-Hui Weng ,  Jia-Lin Wei ,  Yen-Yu Chen ,  Jr-Hung Li ,  Yahru Cheng ,  Chi-Ming Yang ,  Tze-Liang Lee ,  Ching-Yu Chang

IPC: H01L21/00 ,  H01L21/027 ,  H01L21/02

CPC classification number: H01L21/0275 ,  H01L21/0228 ,  H01L21/02362

Abstract: A method of forming a pattern in a photoresist layer includes forming a photoresist layer over a substrate, and reducing moisture or oxygen absorption characteristics of the photoresist layer. The photoresist layer is selectively exposed to actinic radiation to form a latent pattern, and the latent pattern is developed by applying a developer to the selectively exposed photoresist layer to form a pattern.

公开(公告)号：US20230154750A1

公开(公告)日：2023-05-18

申请号：US17674575

申请日：2022-02-17

Applicant: Taiwan Semiconductor Manufacturing Co.,Ltd.

Inventor： Chih-Cheng Liu ,  Yi-Chen Kuo ,  Yen-Yu Chen ,  Jr-Hung Li ,  Tze-Liang Lee

IPC: H01L21/033 ,  H01L21/027 ,  G03F7/40

CPC classification number: H01L21/0332 ,  H01L21/0337 ,  H01L21/0276 ,  G03F7/405

Abstract: Photoresists and methods of forming and using the same are disclosed. In an embodiment, a method includes spin-on coating a first hard mask layer over a target layer; depositing a photoresist layer over the first hard mask layer using chemical vapor deposition or atomic layer deposition, the photoresist layer being deposited using one or more organometallic precursors; heating the photoresist layer to cause cross-linking between the one or more organometallic precursors; exposing the photoresist layer to patterned energy; heating the photoresist layer to cause de-crosslinking in the photoresist layer forming a de-crosslinked portion of the photoresist layer; and removing the de-crosslinked portion of the photoresist layer.