公开(公告)号：US20230402366A1

公开(公告)日：2023-12-14

申请号：US17836781

申请日：2022-06-09

申请人： TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.

发明人： Shuen-Shin LIANG ,  Chia-Hung CHU ,  Po-Chin CHANG ,  Hsu-Kai CHANG ,  Kuan-Kan HU ,  Ken-Yu CHANG ,  Hung-Yi HUANG ,  Harry CHIEN ,  Wei-Yip LOH ,  Chun-I TSAI ,  Hong-Mao LEE ,  Sung-Li WANG ,  Pinyen LIN ,  Chuan-Hui SHEN

IPC分类号： H01L23/522 ,  H01L23/532 ,  H01L21/768

CPC分类号： H01L23/5226 ,  H01L23/53266 ,  H01L21/76843 ,  H01L21/76883

摘要： A semiconductor device includes a substrate, a source/drain region disposed in the substrate, a silicide structure disposed on the source/drain region, a first dielectric layer disposed over the substrate, a conductive contact disposed in the first dielectric layer and over the silicide structure, a second dielectric layer disposed over the first dielectric layer, a via contact disposed in the second dielectric layer and connected to the conductive contact, and a first metal surrounding the via contact.

公开(公告)号：US20220375868A1

公开(公告)日：2022-11-24

申请号：US17875242

申请日：2022-07-27

申请人： TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.

发明人： Cheng-Wei CHANG ,  Chia-Hung CHU ,  Kao-Feng LIN ,  Hsu-Kai CHANG ,  Shuen-Shin LIANG ,  Sung-Li WANG ,  Yi-Ying LIU ,  Po-Nan YEH ,  Yu Shih WANG ,  U-Ting CHIU ,  Chun-Neng LIN ,  Ming-Hsi YEH

IPC分类号： H01L23/532 ,  H01L23/522 ,  H01L21/768

摘要： A semiconductor device includes a gate electrode, a source/drain structure, a lower contact contacting either of the gate electrode or the source/drain structure, and an upper contact disposed in an opening formed in an interlayer dielectric (ILD) layer and in direct contact with the lower contact. The upper contact is in direct contact with the ILD layer without an interposing conductive barrier layer, and the upper contact includes ruthenium.

公开(公告)号：US20240355741A1

公开(公告)日：2024-10-24

申请号：US18760444

申请日：2024-07-01

申请人： Taiwan Semiconductor Manufacturing Company, Ltd.

发明人： Shuen-Shin LIANG ,  Chun-I TSAI ,  Chih-Wei CHANG ,  Chun-Hsien HUANG ,  Hung-Yi HUANG ,  Keng-Chu LIN ,  Ken-Yu CHANG ,  Sung-Li WANG ,  Chia-Hung CHU ,  Hsu-Kai CHANG

IPC分类号： H01L23/532 ,  H01L21/285 ,  H01L21/768 ,  H01L23/522

CPC分类号： H01L23/53266 ,  H01L21/76802 ,  H01L21/7685 ,  H01L21/28568 ,  H01L21/76843 ,  H01L23/5226

摘要： The present disclosure describes a method for forming capping layers configured to prevent the migration of out-diffused cobalt atoms into upper metallization layers In some embodiments, the method includes depositing a cobalt diffusion barrier layer on a liner-free conductive structure that includes ruthenium, where depositing the cobalt diffusion barrier layer includes forming the cobalt diffusion barrier layer self-aligned to the liner-free conductive structure. The method also includes depositing, on the cobalt diffusion barrier layer, a stack with an etch stop layer and dielectric layer, and forming an opening in the stack to expose the cobalt diffusion barrier layer. Finally, the method includes forming a conductive structure on the cobalt diffusion barrier layer.

公开(公告)号：US20240006505A1

公开(公告)日：2024-01-04

申请号：US17854676

申请日：2022-06-30

申请人： TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.

发明人： Po-Chin CHANG ,  Yuting CHENG ,  Hsu-Kai CHANG ,  Chia-Hung CHU ,  Tzu-Pei CHEN ,  Shuen-Shin LIANG ,  Sung-Li WANG ,  Pinyen LIN ,  Lin-Yu HUANG

IPC分类号： H01L29/45 ,  H01L29/40

CPC分类号： H01L29/45 ,  H01L29/401

摘要： A semiconductor device includes a semiconductor structure, a conductive nitride feature, a third dielectric feature, and a conductive line feature. The semiconductor structure includes a substrate, two source/drain regions disposed in the substrate, a first dielectric feature disposed over the substrate, a gate structure disposed in the first dielectric feature and between the source/drain regions, a second dielectric feature disposed over the first dielectric feature, and a contact feature disposed in the second dielectric feature and being connected to at least one of the source/drain regions and the gate structure. The conductive nitride feature includes metal nitride or alloy nitride, is disposed in the second dielectric feature, and is connected to the contact feature. The third dielectric feature is disposed over the second dielectric feature. The conductive feature is disposed in the third dielectric feature and is connected to the conductive nitride feature opposite to the contact feature.

公开(公告)号：US20240332393A1

公开(公告)日：2024-10-03

申请号：US18741963

申请日：2024-06-13

申请人： Taiwan Semiconductor Manufacturing Company, LTD.

发明人： Hsu-Kai CHANG ,  Jhih-Rong HUANG ,  Yen-Tien TUNG ,  Chia-Hung CHU ,  Shuen-Shin LIANG ,  Tzer-Min SHEN ,  Pinyen LIN ,  Sung-Li WANG

IPC分类号： H01L29/45 ,  H01L21/285 ,  H01L21/8238 ,  H01L27/092 ,  H01L29/08 ,  H01L29/417 ,  H01L29/66 ,  H01L29/78

CPC分类号： H01L29/45 ,  H01L21/28518 ,  H01L21/823814 ,  H01L21/823821 ,  H01L21/823871 ,  H01L27/0924 ,  H01L29/0847 ,  H01L29/41791 ,  H01L29/66795 ,  H01L29/7851

摘要： A semiconductor device with different configurations of contact structures and a method of fabricating the same are disclosed. The semiconductor device includes first and second gate structures disposed on first and second fin structures, first and second source/drain (S/D) regions disposed on the first and second fin structures, first and second contact structures disposed on the first and second S/D regions, and a dipole layer disposed at an interface between the first nWFM silicide layer and the first S/D region. The first contact structure includes a first nWFM silicide layer disposed on the first S/D region and a first contact plug disposed on the first nWFM silicide layer. The second contact structure includes a pWFM silicide layer disposed on the second S/D region, a second nWFM silicide layer disposed on the pWFM silicide layer, and a second contact plug disposed on the pWFM silicide layer.

公开(公告)号：US20230299168A1

公开(公告)日：2023-09-21

申请号：US17695075

申请日：2022-03-15

申请人： TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.

发明人： Kuan-Kan HU ,  Shuen-Shin LIANG ,  Chia-Hung CHU ,  Po-Chin CHANG ,  Hsu-Kai CHANG ,  Ken-Yu CHANG ,  Wei-Yip LOH ,  Hung-Yi HUANG ,  Harry CHIEN ,  Sung-Li WANG ,  Pinyen LIN ,  Chuan-Hui SHEN ,  Tzu-Pei CHEN ,  Yuting CHENG

IPC分类号： H01L29/45 ,  H01L29/40 ,  H01L29/417

CPC分类号： H01L29/45 ,  H01L29/401 ,  H01L29/41791 ,  H01L29/41733 ,  H01L23/5226

摘要： A semiconductor device includes a semiconductor substrate, an epitaxial structure, a silicide structure, a conductive structure, and a protection segment. The epitaxial structure is disposed in the semiconductor substrate. The silicide structure is disposed in the epitaxial structure. The conductive structure is disposed over the silicide structure and is electrically connected to the silicide structure. The protection segment is made of metal nitride, is disposed over the silicide structure, and is disposed between the silicide structure and the conductive structure.