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    Black level control for image sensors
    1.
    发明授权
    Black level control for image sensors 有权
    图像传感器的黑色电平控制

    公开(公告)号：US09591242B2

    公开(公告)日：2017-03-07

    申请号：US13944629

    申请日：2013-07-17

    Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.

    Inventor： Volume Chien ,  Yun-Wei Cheng ,  Che-Min Lin ,  Shiu-Ko JangJian ,  Chi-Cherng Jeng ,  Chih-Mu Huang

    IPC: H04N5/361 ,  H01L27/146

    CPC classification number: H04N5/361 ,  H01L27/14609 ,  H01L27/1462 ,  H01L27/14623 ,  H01L27/1464

    Abstract: An embodiment image sensor includes a pixel region spaced apart from a black level control (BLC) region by a buffer region. In an embodiment, a light shield is disposed over the BLC region and extends into the buffer region. In an embodiment, the buffer region includes an array of dummy pixels. Such embodiments effectively reduce light cross talk at the edge of the BLC region, which permits more accurate black level calibration. Thus, the image sensor is capable of producing higher quality images.

    Abstract translation: 实施例图像传感器包括通过缓冲区域与黑电平控制（BLC）区域间隔开的像素区域。 在一个实施例中，遮光罩设置在BLC区域上并延伸到缓冲区域中。 在一个实施例中，缓冲区包括虚拟像素阵列。 这样的实施例有效地减少了在BLC区域的边缘处的光串扰，这允许更准确的黑电平校准。 因此，图像传感器能够产生更高质量的图像。

    Method and structure for reducing light crosstalk in integrated circuit device
    4.
    发明授权
    Method and structure for reducing light crosstalk in integrated circuit device 有权
    降低集成电路器件中的光串扰的方法和结构

    公开(公告)号：US09201195B2

    公开(公告)日：2015-12-01

    申请号：US13930717

    申请日：2013-06-28

    Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.

    Inventor： Allen Tseng ,  Che-Min Lin ,  Zen-Fong Huang ,  Volume Chien ,  Chi-Cherng Jeng

    IPC: G02B6/30 ,  G02B6/32 ,  G02B6/12 ,  H01L27/146 ,  G02B27/00 ,  G02B5/20

    CPC classification number: G02B6/12007 ,  G02B5/201 ,  G02B27/0018 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/14629 ,  H01L27/14685

    Abstract: The present disclosure provides an integrated circuit device comprising a substrate having a back surface and a sensing region disposed in the substrate and being operable to sense radiation projected towards the back surface of the substrate. The device further includes a waveguide disposed over the back surface of the substrate. The waveguide is aligned with the sensing region such that the waveguide is operable to transmit the radiation towards the aligned sensing region. The waveguide includes a waveguide wall, and an inner region disposed adjacent to the waveguide wall. A diffractive index of the waveguide wall is less than a diffractive index of the inner region.

    Abstract translation: 本公开提供了一种集成电路器件，其包括具有背表面和设置在衬底中的感测区域的衬底，并且可操作以感测朝向衬底的背表面投射的辐射。 该器件还包括布置在衬底的背面上的波导管。 波导与感测区域对准，使得波导可操作以将辐射传送到对准的感测区域。 波导包括波导壁和邻近波导壁设置的内部区域。 波导壁的衍射指数小于内部区域的衍射指数。

    Method and Structure for Reducing Light Crosstalk in Integrated Circuit Device
    5.
    发明申请
    Method and Structure for Reducing Light Crosstalk in Integrated Circuit Device 有权
    集成电路设备中减轻光串扰的方法与结构

    公开(公告)号：US20150003777A1

    公开(公告)日：2015-01-01

    申请号：US13930717

    申请日：2013-06-28

    Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.

    Inventor： Allen Tseng ,  Che-Min Lin ,  Zen-Fong Huang ,  Volume Chien ,  Chi-Cherng Jeng

    IPC: G02B6/12 ,  H01L27/146 ,  G02B6/13

    CPC classification number: G02B6/12007 ,  G02B5/201 ,  G02B27/0018 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/14629 ,  H01L27/14685

    Abstract: The present disclosure provides an integrated circuit device comprising a substrate having a back surface and a sensing region disposed in the substrate and being operable to sense radiation projected towards the back surface of the substrate. The device further includes a waveguide disposed over the back surface of the substrate. The waveguide is aligned with the sensing region such that the waveguide is operable to transmit the radiation towards the aligned sensing region. The waveguide includes a waveguide wall, and an inner region disposed adjacent to the waveguide wall. A diffractive index of the waveguide wall is less than a diffractive index of the inner region.

    Abstract translation: 本公开提供了一种集成电路器件，其包括具有背表面和设置在衬底中的感测区域的衬底，并且可操作以感测朝向衬底的背表面投射的辐射。 该器件还包括布置在衬底的背面上的波导管。 波导与感测区域对准，使得波导可操作以将辐射传送到对准的感测区域。 波导包括波导壁和邻近波导壁设置的内部区域。 波导壁的衍射指数小于内部区域的衍射指数。

    Black Level Control for Image Sensors
    6.
    发明申请
    Black Level Control for Image Sensors 有权
    图像传感器的黑色电平控制

    公开(公告)号：US20140211057A1

    公开(公告)日：2014-07-31

    申请号：US13944629

    申请日：2013-07-17

    Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.

    Inventor： Jung-Liang Chien ,  Yun-Wei Cheng ,  Che-Min Lin ,  Shiu-Ko JangJian ,  Chi-Cherng Jeng ,  Chih-Mu Huang

    IPC: H04N5/357

    CPC classification number: H04N5/361 ,  H01L27/14609 ,  H01L27/1462 ,  H01L27/14623 ,  H01L27/1464

    Abstract: An embodiment image sensor includes a pixel region spaced apart from a black level control (BLC) region by a buffer region. In an embodiment, a light shield is disposed over the BLC region and extends into the buffer region. In an embodiment, the buffer region includes an array of dummy pixels. Such embodiments effectively reduce light cross talk at the edge of the BLC region, which permits more accurate black level calibration. Thus, the image sensor is capable of producing higher quality images.

    Abstract translation: 实施例图像传感器包括通过缓冲区域与黑电平控制（BLC）区域间隔开的像素区域。 在一个实施例中，遮光罩设置在BLC区域上并延伸到缓冲区域中。 在一个实施例中，缓冲区包括虚拟像素阵列。 这样的实施例有效地减少了在BLC区域的边缘处的光串扰，这允许更准确的黑电平校准。 因此，图像传感器能够产生更高质量的图像。

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