公开(公告)号：US20150048518A1

公开(公告)日：2015-02-19

申请号：US14059102

申请日：2013-10-21

申请人： Taiwan Semiconductor Manufacturing Company, Ltd.

发明人： I-Chih Chen ,  Ying-Hao Chen ,  Chi-Cheng Jeng ,  Volume Chien ,  Fu-Tsun Tsai ,  Kun-Huei Lin

IPC分类号： H01L23/48 ,  G06F17/50

CPC分类号： H01L23/5226 ,  G06F17/5077 ,  H01L21/76805 ,  H01L21/76877 ,  H01L21/76897 ,  H01L23/3171 ,  H01L23/481 ,  H01L23/522 ,  H01L23/528 ,  H01L23/5283 ,  H01L23/5329 ,  H01L24/03 ,  H01L24/05 ,  H01L24/16 ,  H01L24/29 ,  H01L24/32 ,  H01L24/94 ,  H01L25/50 ,  H01L2224/03616 ,  H01L2224/0401 ,  H01L2224/04026 ,  H01L2224/05022 ,  H01L2224/05085 ,  H01L2224/05092 ,  H01L2224/05124 ,  H01L2224/05147 ,  H01L2224/05184 ,  H01L2224/05567 ,  H01L2224/05624 ,  H01L2224/05647 ,  H01L2224/05684 ,  H01L2224/16145 ,  H01L2224/29006 ,  H01L2224/29186 ,  H01L2224/2919 ,  H01L2224/32145 ,  H01L2224/73204 ,  H01L2224/94 ,  H01L2924/0002 ,  H01L2924/3511 ,  H01L2924/00 ,  H01L2224/83 ,  H01L2924/00014 ,  H01L2224/81 ,  H01L2924/00012

摘要： A semiconductor device includes a first layer including a number of first layer metal pads, a second layer formed on top of the first layer, the second layer including a number of second layer metal pads, and vias connecting the first layer metal pads to the second layer metal pads. A surface area overlap between the first layer metal pads and the second layer metal pads is below a defined threshold.

公开(公告)号：US20140145283A1

公开(公告)日：2014-05-29

申请号：US13742747

申请日：2013-01-16

申请人： Taiwan Semiconductor Manufacturing Company, Ltd.

发明人： Che-Min Lin ,  Volume Chien ,  Chih-Kang Chao ,  Chi-Cheng Jeng ,  Pin Chia Su ,  Chih-Mu Huang

IPC分类号： H01L31/0232

CPC分类号： H01L31/02327 ,  H01L27/14629 ,  H01L31/0232 ,  H01L31/10 ,  H01L31/115 ,  H01L31/18

摘要： A photodiode structure includes a photodiode and a concave reflector disposed below the photodiode. The concave reflector is arranged to reflect incident light from above back toward the photodiode.

摘要翻译： 光电二极管结构包括设置在光电二极管下方的光电二极管和凹面反射器。 凹面反射器被布置成将来自上方的入射光反射到光电二极管。