公开(公告)号：US11621317B2

公开(公告)日：2023-04-04

申请号：US17402889

申请日：2021-08-16

申请人： Taiwan Semiconductor Manufacturing Company, Ltd.

发明人： Chi-Cheng Chen ,  Wei-Li Huang ,  Chun-Yi Wu ,  Kuang-Yi Wu ,  Hon-Lin Huang ,  Chih-Hung Su ,  Chin-Yu Ku ,  Chen-Shien Chen

IPC分类号： H01L27/22 ,  H01L49/02 ,  H01F41/04 ,  H01L23/00 ,  H01L21/768 ,  H01L23/31 ,  H01L23/532

摘要： A semiconductor device structure is provided. The semiconductor device structure includes a semiconductor substrate and a magnetic element over the semiconductor substrate. The semiconductor device structure also includes an isolation layer covering the magnetic element and a portion of the semiconductor substrate. The isolation layer contains a polymer material. The semiconductor device structure further includes a conductive line over the isolation layer and extending exceeding edges of the magnetic element.

公开(公告)号：US12074193B2

公开(公告)日：2024-08-27

申请号：US18193544

申请日：2023-03-30

申请人： Taiwan Semiconductor Manufacturing Company, Ltd.

发明人： Chi-Cheng Chen ,  Wei-Li Huang ,  Chun-Yi Wu ,  Kuang-Yi Wu ,  Hon-Lin Huang ,  Chih-Hung Su ,  Chin-Yu Ku ,  Chen-Shien Chen

IPC分类号： H01L23/31 ,  H01F41/04 ,  H01L21/768 ,  H01L23/00 ,  H01L23/532 ,  H01L49/02

CPC分类号： H01L28/10 ,  H01F41/046 ,  H01L21/76823 ,  H01L23/3114 ,  H01L23/3171 ,  H01L23/53204 ,  H01L24/05 ,  H01L24/32 ,  H01L24/48 ,  H01L2224/04042 ,  H01L2224/04073 ,  H01L2224/05

摘要： A semiconductor device structure is provided. The semiconductor device structure includes a substrate and a magnetic element over the substrate. The semiconductor device structure also includes an isolation layer extending exceeding edges the magnetic element. The isolation layer contains a polymer material. The semiconductor device structure further includes a conductive line over the isolation layer and extending exceeding the edges of the magnetic element.

公开(公告)号：US11908885B2

公开(公告)日：2024-02-20

申请号：US17739487

申请日：2022-05-09

申请人： Taiwan Semiconductor Manufacturing Company, Ltd.

发明人： Chin-Yu Ku ,  Chi-Cheng Chen ,  Hon-Lin Huang ,  Wei-Li Huang ,  Chun-Yi Wu ,  Chen-Shien Chen

IPC分类号： H01L49/02

CPC分类号： H01L28/10

摘要： A semiconductor device structure is provided. The semiconductor device structure includes a substrate and a magnetic element over the substrate. The semiconductor device structure also includes an isolation element over the magnetic element. The i magnetic element is wider than the isolation element. The semiconductor device structure further includes a conductive line over the isolation element.