公开(公告)号：US11621317B2

公开(公告)日：2023-04-04

申请号：US17402889

申请日：2021-08-16

申请人： Taiwan Semiconductor Manufacturing Company, Ltd.

发明人： Chi-Cheng Chen ,  Wei-Li Huang ,  Chun-Yi Wu ,  Kuang-Yi Wu ,  Hon-Lin Huang ,  Chih-Hung Su ,  Chin-Yu Ku ,  Chen-Shien Chen

IPC分类号： H01L27/22 ,  H01L49/02 ,  H01F41/04 ,  H01L23/00 ,  H01L21/768 ,  H01L23/31 ,  H01L23/532

摘要： A semiconductor device structure is provided. The semiconductor device structure includes a semiconductor substrate and a magnetic element over the semiconductor substrate. The semiconductor device structure also includes an isolation layer covering the magnetic element and a portion of the semiconductor substrate. The isolation layer contains a polymer material. The semiconductor device structure further includes a conductive line over the isolation layer and extending exceeding edges of the magnetic element.

公开(公告)号：US10290697B2

公开(公告)日：2019-05-14

申请号：US16139682

申请日：2018-09-24

申请人： Taiwan Semiconductor Manufacturing Company, Ltd.

发明人： Wei-Li Huang ,  Chi-Cheng Chen ,  Hon-Lin Huang ,  Chien-Chih Chou ,  Chin-Yu Ku ,  Chen-Shien Chen

IPC分类号： H01F27/24 ,  H01L49/02 ,  H01L21/3213 ,  H01F41/04 ,  H01F27/28 ,  H01L27/22 ,  H01L23/522 ,  H01L23/64

摘要： A method of manufacturing a semiconductor device and the semiconductor device are provided in which a plurality of layers with cobalt-zirconium-tantalum are formed over a semiconductor substrate, the plurality of layers are patterned, and multiple dielectric layers and conductive materials are deposited over the CZT material. Another layer of CZT material encapsulates the conductive material.

公开(公告)号：US20180204902A1

公开(公告)日：2018-07-19

申请号：US15582963

申请日：2017-05-01

申请人： Taiwan Semiconductor Manufacturing Company, Ltd.

发明人： Wei-Li Huang ,  Chi-Cheng Chen ,  Hon-Lin Huang ,  Chien-Chih Chou ,  Chin-Yu Ku ,  Chen-Shien Chen

IPC分类号： H01L49/02 ,  H01L21/3213 ,  H01F41/04 ,  H01F27/28

CPC分类号： H01L28/10 ,  H01F27/2804 ,  H01F41/041 ,  H01L21/32134 ,  H01L21/32139 ,  H01L23/5227 ,  H01L23/645 ,  H01L27/222 ,  H01L2924/1206

摘要： A method of manufacturing a semiconductor device and the semiconductor device are provided in which a plurality of layers with cobalt-zirconium-tantalum are formed over a semiconductor substrate, the plurality of layers are patterned, and multiple dielectric layers and conductive materials are deposited over the CZT material. Another layer of CZT material encapsulates the conductive material.

公开(公告)号：US11908885B2

公开(公告)日：2024-02-20

申请号：US17739487

申请日：2022-05-09

申请人： Taiwan Semiconductor Manufacturing Company, Ltd.

发明人： Chin-Yu Ku ,  Chi-Cheng Chen ,  Hon-Lin Huang ,  Wei-Li Huang ,  Chun-Yi Wu ,  Chen-Shien Chen

IPC分类号： H01L49/02

CPC分类号： H01L28/10

摘要： A semiconductor device structure is provided. The semiconductor device structure includes a substrate and a magnetic element over the substrate. The semiconductor device structure also includes an isolation element over the magnetic element. The i magnetic element is wider than the isolation element. The semiconductor device structure further includes a conductive line over the isolation element.

公开(公告)号：US11749711B2

公开(公告)日：2023-09-05

申请号：US17578757

申请日：2022-01-19

申请人： Taiwan Semiconductor Manufacturing Company, Ltd.

发明人： Chi-Cheng Chen ,  Wei-Li Huang ,  Chien-Chih Kuo ,  Hon-Lin Huang ,  Chin-Yu Ku ,  Chen-Shien Chen

IPC分类号： H01L49/02 ,  H01F41/04 ,  H01L23/00 ,  H01L21/768 ,  H01L23/31 ,  H01L23/532

CPC分类号： H01L28/10 ,  H01F41/046 ,  H01L21/76823 ,  H01L23/3114 ,  H01L23/3171 ,  H01L23/53204 ,  H01L24/05 ,  H01L24/32 ,  H01L24/48 ,  H01L2224/04042 ,  H01L2224/04073 ,  H01L2224/05

摘要： A semiconductor device structure is provided. The semiconductor device structure includes a semiconductor substrate and a magnetic element over the semiconductor substrate. The semiconductor device structure also includes an adhesive element between the magnetic element and the substrate. The adhesive element extends exceeding opposite edges of the magnetic element. The semiconductor device structure further includes an isolation element extending exceeding the opposite edges of the magnetic element. The isolation element partially covers a top surface of the magnetic element. In addition, the semiconductor device structure includes a conductive line over the isolation element.

公开(公告)号：US20220293494A1

公开(公告)日：2022-09-15

申请号：US17827801

申请日：2022-05-30

申请人： Taiwan Semiconductor Manufacturing Company, Ltd.

发明人： Cheng-Lung Yang ,  Chih-Hung Su ,  Chen-Shien Chen ,  Hon-Lin Huang ,  Kun-Ming Tsai ,  Wei-Je Lin

IPC分类号： H01L23/48 ,  H01L23/00 ,  H01L23/528 ,  H01L21/48

摘要： A method of forming a semiconductor device includes following steps. A first organic layer is formed to cover a first conductive layer. A first opening is formed in the first organic layer to expose a first surface of the first conductive layer. A first silicon layer is formed on a sidewall of the first opening and the first surface of the first conductive layer. A first dielectric layer is formed on the sidewall of the first opening and the first surface of the first conductive layer over the first silicon layer. By using a first mask, portions of the first silicon layer and the first dielectric layer on the first surface are simultaneously removed to expose the first surface, wherein after removing the portions of the first silicon layer and the first dielectric layer, the first dielectric layer covers a top surface of the first silicon layer.

公开(公告)号：US20160268192A1

公开(公告)日：2016-09-15

申请号：US15160414

申请日：2016-05-20

申请人： Taiwan Semiconductor Manufacturing Company, Ltd.

发明人： Yu-Hung Lin ,  Mei-Hui Fu ,  Wei-Jung Lin ,  You-Hua Chou ,  Chia-Lin Hsu ,  Hon-Lin Huang ,  Shih-Chi Lin

IPC分类号： H01L23/528 ,  H01L23/532 ,  H01L21/285 ,  H01L23/522 ,  H01L21/768 ,  H01L21/3205

CPC分类号： H01L23/528 ,  H01L21/28518 ,  H01L21/32053 ,  H01L21/76802 ,  H01L21/76834 ,  H01L21/76843 ,  H01L21/76846 ,  H01L21/76855 ,  H01L21/76877 ,  H01L21/76886 ,  H01L21/76889 ,  H01L21/76897 ,  H01L23/5226 ,  H01L23/53209 ,  H01L23/53223 ,  H01L23/53238 ,  H01L23/53261 ,  H01L23/53266 ,  H01L23/5329 ,  H01L2924/0002 ,  H01L2924/00

摘要： An interconnect structure and a method of forming an interconnect structure are disclosed. The interconnect structure includes a contact layer over a substrate, a dielectric layer over the contact layer, a silicide layer over the exposed portion of the contact layer, a barrier layer along sidewalls of the opening, an alloy layer over the barrier layer, a glue layer over the alloy layer, and a conductive plug over the glue layer, wherein the dielectric layer has an opening, and the opening exposes a portion of the contact layer.

摘要翻译： 公开了互连结构和形成互连结构的方法。 互连结构包括在衬底上的接触层，接触层上的电介质层，接触层的暴露部分上的硅化物层，沿着开口侧壁的阻挡层，阻挡层上的合金层，胶 层，并且在胶层上方具有导电塞，其中介电层具有开口，并且开口暴露接触层的一部分。

公开(公告)号：US20140227831A1

公开(公告)日：2014-08-14

申请号：US14257734

申请日：2014-04-21

申请人： TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.

发明人： Hon-Lin Huang ,  Ching-Wen Hsiao ,  Kuo-Ching Hsu ,  Chen-Shien Chen

IPC分类号： H01L23/00

CPC分类号： H01L24/11 ,  H01L23/3157 ,  H01L23/481 ,  H01L24/13 ,  H01L24/81 ,  H01L2221/68327 ,  H01L2221/68359 ,  H01L2224/0361 ,  H01L2224/03912 ,  H01L2224/0401 ,  H01L2224/05558 ,  H01L2224/05572 ,  H01L2224/1147 ,  H01L2224/11823 ,  H01L2224/11849 ,  H01L2224/119 ,  H01L2224/11912 ,  H01L2224/13027 ,  H01L2224/13083 ,  H01L2224/13099 ,  H01L2224/131 ,  H01L2224/13111 ,  H01L2224/13147 ,  H01L2224/13155 ,  H01L2224/13562 ,  H01L2224/1357 ,  H01L2224/13611 ,  H01L2224/818 ,  H01L2924/00014 ,  H01L2924/0002 ,  H01L2924/01013 ,  H01L2924/01022 ,  H01L2924/01023 ,  H01L2924/01027 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01075 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01322 ,  H01L2924/01327 ,  H01L2924/014 ,  H01L2924/04953 ,  H01L2924/14 ,  H01L2924/19041 ,  H01L2224/05552

摘要： A method of forming an integrated circuit structure is provided. The method includes providing a substrate, the substrate having a conductive pad thereon. A dielectric buffer layer is formed over at least a portion of the conductive pad, and an under-bump-metallurgy (UBM) is formed directly coupled to the conductive pad, wherein the UBM extends over at least a portion of the dielectric buffer layer. Thereafter, a conductive pillar is formed over the UBM, and one or more conductive materials are formed over the conductive pillar. The substrate may be attached to a carrier substrate using an adhesive.

摘要翻译： 提供一种形成集成电路结构的方法。 所述方法包括提供衬底，所述衬底在其上具有导电垫。 在导电焊盘的至少一部分上形成介电缓冲层，并且形成直接耦合到导电焊盘的凸起下冶金（UBM），其中UBM延伸至电介质缓冲层的至少一部分。 此后，在UBM上形成导电柱，并且在导电柱上形成一个或多个导电材料。 衬底可以使用粘合剂附接到载体衬底。

公开(公告)号：US20240347578A1

公开(公告)日：2024-10-17

申请号：US18751358

申请日：2024-06-24

申请人： Taiwan Semiconductor Manufacturing Company, Ltd.

发明人： Chien-Hsien Kuo ,  Hon-Lin Huang ,  Han-Yi Lu ,  Ching-Wen Hsiao ,  Alexander Kalnitsky

IPC分类号： H01F17/00 ,  H01F17/04 ,  H01F41/04

CPC分类号： H01L28/10 ,  H01F17/0013 ,  H01F17/0033 ,  H01F17/04 ,  H01F41/046 ,  H01F2017/0086

摘要： A manufacturing method of a semiconductor device includes: forming a first dielectric layer on inductor traces, openings of the first dielectric layer exposing the inductor traces; disposing a buffer material on the first dielectric layer and the inductor traces in the openings; sequentially disposing an etch stop material and a ferromagnetic material on the buffer material; removing the ferromagnetic material from over the openings to form a core material layer covering a first area; removing the etch stop and buffer materials from the openings to form an etch stop layer and a buffer layer, where the etch stop and buffer layers cover a second area, the first area is smaller than and within the second area; forming a second dielectric layer on the first dielectric layer to embed the buffer, etch stop, and core material layers; and forming inductor vias extending through the first and second dielectric layers.

公开(公告)号：US10269703B2

公开(公告)日：2019-04-23

申请号：US15434644

申请日：2017-02-16

申请人： TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.

发明人： Chin-Yu Ku ,  Sheng-Pin Yang ,  Chen-Shien Chen ,  Hon-Lin Huang ,  Chien-Chih Chou ,  Ting-Li Yang

IPC分类号： H01L23/522 ,  H01L49/02 ,  H01L21/768 ,  H01L23/532

摘要： A semiconductor device includes: a first conductive line disposed on a substrate, a second conductive line disposed on the substrate, and the second conductive line separated with the first conductive line by a trench; an insulating layer disposed on the first conductive line and the second conductive line, and filled the trench between the first conductive line and the second conductive line; and a magnetic film having a first surface and a second surface opposite to the first surface, and the first surface disposed on the insulating layer; wherein the first surface has a first concave directly above the trench, and the first concave has a first obtuse angle of at least 170 degree.