公开(公告)号：US20220351983A1

公开(公告)日：2022-11-03

申请号：US17865305

申请日：2022-07-14

申请人： TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.

发明人： Wen-Hsiung LU ,  Ming-Da CHENG ,  Su-Fei LIN ,  Hsu-Lun LIU ,  Chien-Pin CHAN ,  Yung-Sheng LIN

IPC分类号： H01L21/48 ,  C25D5/00 ,  H01L23/498 ,  H01L23/00 ,  H01L23/538

摘要： In a method of manufacturing a semiconductor device first conductive layers are formed over a substrate. A first photoresist layer is formed over the first conductive layers. The first conductive layers are etched by using the first photoresist layer as an etching mask, to form an island pattern of the first conductive layers separated from a bus bar pattern of the first conductive layers by a ring shape groove. A connection pattern is formed to connect the island pattern and the bus bar pattern. A second photoresist layer is formed over the first conductive layers and the connection pattern. The second photoresist layer includes an opening over the island pattern. Second conductive layers are formed on the island pattern in the opening. The second photoresist layer is removed, and the connection pattern is removed, thereby forming a bump structure.

公开(公告)号：US20230067826A1

公开(公告)日：2023-03-02

申请号：US17460647

申请日：2021-08-30

申请人： TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.

发明人： Neng-Chieh CHANG ,  Po-Hao TSAI ,  Ming-Da CHENG ,  Wen-Hsiung LU ,  Hsu-Lun LIU

IPC分类号： H01L23/00 ,  H01L21/56 ,  H01L25/10

摘要： A semiconductor package structure includes a conductive pad formed over a substrate. The structure also includes a passivation layer formed over the conductive pad. The structure also includes a first via structure formed through the passivation layer and in contact with the conductive pad. The structure also includes a first encapsulating material surrounding the first via structure. The structure also includes a redistribution layer structure formed over the first via structure. The first via structure has a lateral extending portion embedded in the first encapsulating material near a top surface of the first via structure.

公开(公告)号：US20240266190A1

公开(公告)日：2024-08-08

申请号：US18642173

申请日：2024-04-22

申请人： Taiwan Semiconductor Manufacturing Company, Ltd.

发明人： Wen-Hsiung LU ,  Ming-Da CHENG ,  Su-Fei LIN ,  Hsu-Lun LIU ,  Chien-Pin CHAN ,  Yung-Sheng LIN

IPC分类号： H01L21/48 ,  C25D5/00 ,  H01L23/00 ,  H01L23/498 ,  H01L23/538

CPC分类号： H01L21/4853 ,  C25D5/60 ,  H01L21/486 ,  H01L23/49811 ,  H01L23/5384 ,  H01L24/14

摘要： In a method of manufacturing a semiconductor device first conductive layers are formed over a substrate. A first photoresist layer is formed over the first conductive layers. The first conductive layers are etched by using the first photoresist layer as an etching mask, to form an island pattern of the first conductive layers separated from a bus bar pattern of the first conductive layers by a ring shape groove. A connection pattern is formed to connect the island pattern and the bus bar pattern. A second photoresist layer is formed over the first conductive layers and the connection pattern. The second photoresist layer includes an opening over the island pattern. Second conductive layers are formed on the island pattern in the opening. The second photoresist layer is removed, and the connection pattern is removed, thereby forming a bump structure.

公开(公告)号：US20240047403A1

公开(公告)日：2024-02-08

申请号：US18484609

申请日：2023-10-11

申请人： TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.

发明人： Neng-Chieh CHANG ,  Po-Hao TSAI ,  Ming-Da CHENG ,  Wen-Hsiung LU ,  Hsu-Lun LIU

IPC分类号： H01L23/00 ,  H01L21/56 ,  H01L25/10

CPC分类号： H01L24/20 ,  H01L24/19 ,  H01L24/24 ,  H01L24/82 ,  H01L21/561 ,  H01L25/105 ,  H01L24/96 ,  H01L2225/1058 ,  H01L2224/214 ,  H01L2224/215 ,  H01L2924/01029 ,  H01L2924/01013 ,  H01L24/13 ,  H01L2224/13024 ,  H01L24/04 ,  H01L24/05 ,  H01L2224/0401 ,  H01L2224/05569 ,  H01L2224/19 ,  H01L2224/24175 ,  H01L2224/821 ,  H01L2225/1035

摘要： A semiconductor package structure includes a conductive pad formed over a substrate. The semiconductor package structure also includes a passivation layer formed over the conductive pad. The semiconductor package structure further includes a first via structure formed through the passivation layer and in contact with the conductive pad. The semiconductor package structure also includes a first encapsulating material surrounding the first via structure. The semiconductor package structure further includes a redistribution layer structure formed over the first via structure. The first via structure has a lateral extending portion embedded in the first encapsulating material near a top surface of the first via structure, and the lateral extending portion has a width increasing in a direction toward the redistribution layer structure.