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公开(公告)号：US20230381701A1
公开(公告)日：2023-11-30
申请号：US18448963
申请日：2023-08-13
发明人： Wen-Hao Cheng , Hsuan-Chih Chu , Yen-Yu Chen
IPC分类号： B01D45/14 , C23C16/455 , C23C16/44
CPC分类号： B01D45/14 , C23C16/45544 , C23C16/4407
摘要： A device for removing particles in a gas stream includes a first cylindrical portion configured to receive the gas stream containing a target gas and the particles, a rotatable device disposed within the first cylindrical portion and configured to generate a centrifugal force when in a rotational action to divert the particles away from the rotatable device, a second cylindrical portion coupled to the first cylindrical portion and configured to receive the target gas, and a third cylindrical portion coupled to the first cylindrical portion and surrounding the second cylindrical portion, the third cylindrical portion being configured to receive the diverted particles.
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公开(公告)号：US20220154330A1
公开(公告)日：2022-05-19
申请号：US17096962
申请日：2020-11-13
发明人： Wen-Hao Cheng , Hsuan-Chih Chu , Yen-Yu Chen
摘要： A system and a method for detecting abnormality of a thin-film deposition process are provided. In the method, a thin-film is deposited on a substrate in a thin-film deposition chamber by using a target, a dimension of a collimator mounted between the target and the substrate is scanned by using at least one sensor disposed in the thin-film deposition chamber to derive an erosion profile of the target, and abnormality of the thin-film deposition process is detected by analyzing the erosion profile with an analysis model trained with data of a plurality of erosion profiles derived under a plurality of deposition conditions.
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公开(公告)号：US12089506B2
公开(公告)日：2024-09-10
申请号：US17578347
申请日：2022-01-18
发明人： Wen-Hao Cheng , Hsuan-Chih Chu , Yen-Yu Chen
CPC分类号： H10N50/80 , C23C14/3407 , H10N50/01
摘要： A sputtering target structure includes a back plate characterized by a first size, and a plurality of sub-targets bonded to the back plate. Each of the sub-targets is characterized by a size that is a fraction of the first size and is equal to or less than a threshold target size. Each sub-target includes a ferromagnetic material containing iron (Fe) and boron (B). Each of the plurality of sub-targets is in direct contact with one or more adjacent sub-targets.
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公开(公告)号：US12030008B2
公开(公告)日：2024-07-09
申请号：US17387951
申请日：2021-07-28
发明人： Wen-Hao Cheng , Hsuan-Chih Chu , Yen-Yu Chen
IPC分类号： B01D45/14 , C23C16/44 , C23C16/455
CPC分类号： B01D45/14 , C23C16/4407 , C23C16/45544
摘要： A device for removing particles in a gas stream includes a first cylindrical portion configured to receive the gas stream containing a target gas and the particles, a rotatable device disposed within the first cylindrical portion and configured to generate a centrifugal force when in a rotational action to divert the particles away from the rotatable device, a second cylindrical portion coupled to the first cylindrical portion and configured to receive the target gas, and a third cylindrical portion coupled to the first cylindrical portion and surrounding the second cylindrical portion, the third cylindrical portion being configured to receive the diverted particles.
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公开(公告)号：US20230010438A1
公开(公告)日：2023-01-12
申请号：US17585252
申请日：2022-01-26
发明人： Wen-Hao Cheng , Hsuan-Chih Chu , Yen-Yu Chen
IPC分类号： H01L23/532 , H01L21/02 , H01L23/535 , H01L21/762
摘要： A semiconductor device includes a device feature. The semiconductor device includes a first silicide layer having a first metal, wherein the first silicide layer is embedded in the device feature. The semiconductor device includes a second silicide layer having a second metal, wherein the second silicide layer, disposed above the device feature, comprises a first portion directly contacting the first silicide layer. The first metal is different from the second metal.
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公开(公告)号：US20230008029A1
公开(公告)日：2023-01-12
申请号：US17578347
申请日：2022-01-18
发明人： Wen-Hao Cheng , Hsuan-Chih Chu , Yen-Yu Chen
摘要： A sputtering target structure includes a back plate characterized by a first size, and a plurality of sub-targets bonded to the back plate. Each of the sub-targets is characterized by a size that is a fraction of the first size and is equal to or less than a threshold target size. Each sub-target includes a ferromagnetic material containing iron (Fe) and boron (B). Each of the plurality of sub-targets is in direct contact with one or more adjacent sub-targets.
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公开(公告)号：US20240258142A1
公开(公告)日：2024-08-01
申请号：US18103684
申请日：2023-01-31
发明人： Wen-Hao Cheng , Hsuan-Chih Chu , Yen-Yu Chen
IPC分类号： H01L21/67 , G06N20/00 , H01L21/68 , H01L21/683
CPC分类号： H01L21/67265 , G06N20/00 , H01L21/67248 , H01L21/681 , H01L21/6838
摘要： A device includes a movable blade having a first surface to receive a semiconductor wafer. The device can include a positional sensor to detect a position of the semiconductor wafer on a surface of the movable blade, relative to a stationary body. The movable blade can be configured to move relative to the stationary body to cause a displacement of the semiconductor wafer relative to the movable blade. The positional sensor can be coupled to the movable blade.
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公开(公告)号：US11965237B2
公开(公告)日：2024-04-23
申请号：US17096962
申请日：2020-11-13
发明人： Wen-Hao Cheng , Hsuan-Chih Chu , Yen-Yu Chen
CPC分类号： C23C14/52 , C23C14/34 , C23C14/54 , H01J37/32926 , H01J37/3447 , H01J37/347 , H01J37/3482
摘要： A system and a method for detecting abnormality of a thin-film deposition process are provided. In the method, a thin-film is deposited on a substrate in a thin-film deposition chamber by using a target, a dimension of a collimator mounted between the target and the substrate is scanned by using at least one sensor disposed in the thin-film deposition chamber to derive an erosion profile of the target, and abnormality of the thin-film deposition process is detected by analyzing the erosion profile with an analysis model trained with data of a plurality of erosion profiles derived under a plurality of deposition conditions.
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公开(公告)号：US20240011160A1
公开(公告)日：2024-01-11
申请号：US17811876
申请日：2022-07-11
发明人： Wen-Hao Cheng , Hsuan-Chih Chu , Yen-Yu Chen
IPC分类号： C23C16/52 , C23C16/455 , C23C16/34
CPC分类号： C23C16/52 , C23C16/45553 , C23C16/45544 , C23C16/34
摘要： A precursor supply system for thin film deposition is provided. The precursor supply system includes a precursor source container, and the precursor source container includes: a top wall; a bottom wall; a side wall circumferentially connecting the top wall and the bottom wall, wherein at least a portion of an interior surface of the precursor source container has a three-dimensional (3D) pattern; an inlet configured to allow introduction of a carrier gas into the precursor source container; and an outlet configured to allow exit of a precursor vapor generated in the precursor source container.
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公开(公告)号：US20220297037A1
公开(公告)日：2022-09-22
申请号：US17387951
申请日：2021-07-28
发明人： Wen-Hao Cheng , Hsuan-Chih Chu , Yen-Yu Chen
IPC分类号： B01D45/14 , C23C16/44 , C23C16/455
摘要： A device for removing particles in a gas stream includes a first cylindrical portion configured to receive the gas stream containing a target gas and the particles, a rotatable device disposed within the first cylindrical portion and configured to generate a centrifugal force when in a rotational action to divert the particles away from the rotatable device, a second cylindrical portion coupled to the first cylindrical portion and configured to receive the target gas, and a third cylindrical portion coupled to the first cylindrical portion and surrounding the second cylindrical portion, the third cylindrical portion being configured to receive the diverted particles.
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