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公开(公告)号：US20230010438A1
公开(公告)日：2023-01-12
申请号：US17585252
申请日：2022-01-26
发明人： Wen-Hao Cheng , Hsuan-Chih Chu , Yen-Yu Chen
IPC分类号： H01L23/532 , H01L21/02 , H01L23/535 , H01L21/762
摘要： A semiconductor device includes a device feature. The semiconductor device includes a first silicide layer having a first metal, wherein the first silicide layer is embedded in the device feature. The semiconductor device includes a second silicide layer having a second metal, wherein the second silicide layer, disposed above the device feature, comprises a first portion directly contacting the first silicide layer. The first metal is different from the second metal.
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公开(公告)号：US20230008029A1
公开(公告)日：2023-01-12
申请号：US17578347
申请日：2022-01-18
发明人： Wen-Hao Cheng , Hsuan-Chih Chu , Yen-Yu Chen
摘要： A sputtering target structure includes a back plate characterized by a first size, and a plurality of sub-targets bonded to the back plate. Each of the sub-targets is characterized by a size that is a fraction of the first size and is equal to or less than a threshold target size. Each sub-target includes a ferromagnetic material containing iron (Fe) and boron (B). Each of the plurality of sub-targets is in direct contact with one or more adjacent sub-targets.
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公开(公告)号：US20170167027A1
公开(公告)日：2017-06-15
申请号：US15442467
申请日：2017-02-24
发明人： Ke-Chih Liu , Chia-Ming Tsai , Yen-Yu Chen , Yueh-Ching Pai , Yu-Min Chang
IPC分类号： C23C16/52 , H01L21/66 , C23C16/46 , C23C16/448 , H01L21/02
摘要： A method includes applying a first amount of heat to a vapor region of a precursor canister, measuring an indication of saturated vapor pressure within the vapor region during the applying the first amount of heat, and applying a second amount of heat to the vapor region of the precursor canister, the second amount of heat being adjusted from the first amount of heat based on the indication of saturated vapor pressure.
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公开(公告)号：US09680021B2
公开(公告)日：2017-06-13
申请号：US15018245
申请日：2016-02-08
发明人： Yen-Yu Chen , Chi-Yuan Shih , Chi-Wen Liu
IPC分类号： H01L29/78 , H01L21/8234 , H01L27/088 , H01L29/165 , H01L23/29 , H01L23/31 , H01L29/06 , H01L29/10 , H01L29/66
CPC分类号： H01L29/7851 , H01L21/823431 , H01L21/823481 , H01L23/291 , H01L23/3171 , H01L27/0886 , H01L29/0649 , H01L29/1054 , H01L29/165 , H01L29/66795 , H01L29/785 , H01L29/7853 , H01L29/7854 , H01L2924/0002 , H01L2924/00
摘要： A fin field effect transistor (FinFET), and a method of forming, is provided. The FinFET has a fin having one or more semiconductor layers epitaxially grown on a substrate. A first passivation layer is formed over the fins, and isolation regions are formed between the fins. An upper portion of the fins are reshaped and a second passivation layer is formed over the reshaped portion. Thereafter, a gate structure may be formed over the fins and source/drain regions may be formed.
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公开(公告)号：US20170018629A1
公开(公告)日：2017-01-19
申请号：US15277777
申请日：2016-09-27
IPC分类号： H01L29/66 , H01L29/06 , H01L29/78 , H01L29/10 , H01L21/8234 , H01L21/02 , H01L21/321 , H01L21/762 , H01L27/088
CPC分类号： H01L29/66795 , H01L21/0228 , H01L21/32105 , H01L21/76224 , H01L21/823431 , H01L21/823481 , H01L21/823821 , H01L27/0886 , H01L29/0649 , H01L29/1054 , H01L29/785 , H01L29/7853
摘要： The disclosure relates to a fin field effect transistor (FinFET). An exemplary FinFET comprises a substrate comprising a major surface; a fin structure protruding from the major surface comprising an upper portion comprising a first semiconductor material having a first lattice constant, wherein the upper portion comprises a first substantially vertical portion having a first width and a second substantially vertical portion having a second width less than the first width over the first substantially vertical portion; and a lower portion comprising a second semiconductor material having a second lattice constant less than the first lattice constant, wherein a top surface of the lower portion has a third width less than the first width; and a gate structure covering the second substantially vertical portion.
摘要翻译： 本发明涉及鳍式场效应晶体管（FinFET）。 示例性FinFET包括包含主表面的衬底; 从所述主表面突出的鳍结构，包括包括具有第一晶格常数的第一半导体材料的上部，其中所述上部包括具有第一宽度的第一基本垂直部分和具有小于所述第一宽度的第二宽度的第二基本垂直部分 第一宽度在第一基本竖直部分上; 以及下部，包括具有小于所述第一晶格常数的第二晶格常数的第二半导体材料，其中所述下部的顶表面具有小于所述第一宽度的第三宽度; 以及覆盖所述第二基本垂直部分的栅极结构。
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公开(公告)号：US09337285B2
公开(公告)日：2016-05-10
申请号：US14853587
申请日：2015-09-14
IPC分类号： H01L29/51 , H01L29/78 , H01L29/417 , H01L21/285 , H01L21/8234
CPC分类号： H01L29/7851 , H01L21/28525 , H01L21/28568 , H01L21/324 , H01L21/76224 , H01L21/823431 , H01L21/823807 , H01L21/823814 , H01L27/0886 , H01L29/165 , H01L29/41791 , H01L29/45 , H01L29/49 , H01L29/495 , H01L29/4958 , H01L29/518 , H01L29/66636 , H01L29/66795 , H01L29/7848 , H01L29/785 , H01L2029/7858 , H01L2924/0002 , H01L2924/00
摘要： The disclosure relates to a semiconductor device. An exemplary structure for a contact structure for a semiconductor device comprises a substrate comprising a major surface and a cavity below the major surface; a strained material in the cavity, wherein a lattice constant of the strained material is different from a lattice constant of the substrate; a Ge-containing dielectric layer over the strained material; and a metal layer over the Ge-containing dielectric layer.
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公开(公告)号：US09287262B2
公开(公告)日：2016-03-15
申请号：US14051033
申请日：2013-10-10
发明人： Yen-Yu Chen , Chi-Yuan Shih , Chi-Wen Liu
IPC分类号： H01L29/78 , H01L27/088 , H01L21/8234 , H01L29/165
CPC分类号： H01L29/7851 , H01L21/823431 , H01L21/823481 , H01L23/291 , H01L23/3171 , H01L27/0886 , H01L29/0649 , H01L29/1054 , H01L29/165 , H01L29/66795 , H01L29/785 , H01L29/7853 , H01L29/7854 , H01L2924/0002 , H01L2924/00
摘要： A fin field effect transistor (FinFET), and a method of forming, is provided. The FinFET has a fin having one or more semiconductor layers epitaxially grown on a substrate. A first passivation layer is formed over the fins, and isolation regions are formed between the fins. An upper portion of the fins are reshaped and a second passivation layer is formed over the reshaped portion. Thereafter, a gate structure may be formed over the fins and source/drain regions may be formed.
摘要翻译： 提供了鳍状场效应晶体管（FinFET）及其形成方法。 FinFET具有在衬底上外延生长的一个或多个半导体层的翅片。 在鳍片之上形成第一钝化层，并且在翅片之间形成隔离区域。 翼片的上部被重新成形，并且在重新成形的部分上形成第二钝化层。 此后，可以在鳍片之上形成栅极结构，并且可以形成源极/漏极区域。
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公开(公告)号：US09227294B2
公开(公告)日：2016-01-05
申请号：US14145192
申请日：2013-12-31
发明人： Chung-Liang Cheng , Yen-Yu Chen , Chang-Sheng Lee , Wei Zhang
IPC分类号： B24B37/00 , B24B37/013 , B24B49/10 , B24B37/20
CPC分类号： B24B37/013 , B24B37/205 , B24B49/10
摘要： An apparatus for chemical mechanical polishing includes a wafer carrier, a first electrode, a rotatable pedestal, a second electrode, and an electric current detector. The first electrode is disposed at the wafer carrier. The rotatable pedestal is positioned opposite to the wafer carrier in order to perform a polishing operation with the wafer carrier accordingly. The second electrode is disposed at the rotatable pedestal and electrically coupled to the first electrode in order to form a circuit loop. The electric current detector is between the first electrode and the second electrode.
摘要翻译： 用于化学机械抛光的设备包括晶片载体，第一电极，可旋转底座，第二电极和电流检测器。 第一电极设置在晶片载体上。 可旋转基座与晶片载体相对定位，以便相应地与晶片载体进行抛光操作。 第二电极设置在可旋转的基座处并电耦合到第一电极以形成电路回路。 电流检测器位于第一电极和第二电极之间。
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公开(公告)号：US09142474B2
公开(公告)日：2015-09-22
申请号：US14047804
申请日：2013-10-07
CPC分类号： H01L23/3171 , H01L21/02233 , H01L21/02247 , H01L21/02252 , H01L21/02255 , H01L21/02318 , H01L23/291 , H01L23/3192 , H01L29/1054 , H01L29/165 , H01L29/66795 , H01L29/785 , H01L29/7851 , H01L2924/0002 , H01L2924/00
摘要： A FinFET comprises a substrate comprising a major surface; a fin structure protruding from the major surface comprising a lower fin portion comprising a first semiconductor material having a first lattice constant; an upper fin portion comprising a second semiconductor material having a second lattice constant greater than the first lattice constant; a middle fin portion comprising a third semiconductor material having a third lattice constant between the first lattice constant and the second lattice constant; and a passivation structure surrounding the fin structure comprising a lower passivation portion surrounding the lower fin portion comprising a first oxynitride of the first semiconductor material; an upper passivation portion surrounding the upper fin portion comprising a second oxynitride of the second semiconductor material; and a middle passivation portion surrounding the middle fin portion comprising a third oxynitride of the third semiconductor material.
摘要翻译： FinFET包括包括主表面的衬底; 从主表面突出的翅片结构，包括下部翅片部分，其包括具有第一晶格常数的第一半导体材料; 上部翅片部分，其包括具有大于所述第一晶格常数的第二晶格常数的第二半导体材料; 中间翅片部分，包括在第一晶格常数和第二晶格常数之间具有第三晶格常数的第三半导体材料; 以及围绕所述鳍结构的钝化结构，包括围绕所述下鳍部分的下钝化部分，所述下钝化部分包括所述第一半导体材料的第一氧氮化物; 围绕所述上翅片部分的上钝化部分包括所述第二半导体材料的第二氧氮化物; 以及围绕中间翅片部分的中间钝化部分，包括第三半导体材料的第三氧氮化物。
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公开(公告)号：US20220352223A1
公开(公告)日：2022-11-03
申请号：US17865623
申请日：2022-07-15
发明人： Chun-Yuan Chen , Ching-Chun Wang , Hsiao-Hui Tseng , Jen-Cheng Liu , Jhy-Jyi Sze , Shyh-Fann Ting , Wei Chuang Wu , Yen-Ting Chiang , Chia Ching Liao , Yen-Yu Chen
IPC分类号： H01L27/146 , H01L29/423
摘要： In some embodiments, the present disclosure relates to a device having a semiconductor substrate including a frontside and a backside. On the frontside of the semiconductor substrate are a first source/drain region and a second source/drain region. A gate electrode is arranged on the frontside of the semiconductor substrate and includes a horizontal portion, a first vertical portion, and a second vertical portion. The horizontal portion is arranged over the frontside of the semiconductor substrate and between the first and second source/drain regions. The first vertical portion extends from the frontside towards the backside of the semiconductor substrate and contacts the horizontal portion of the gate electrode structure. The second vertical portion extends from the frontside towards the backside of the semiconductor substrate, contacts the horizontal portion of the gate electrode structure, and is separated from the first vertical portion by a channel region of the substrate.
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