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    Low-noise image sensor having stacked semiconductor substrates
    1.
    发明授权
    Low-noise image sensor having stacked semiconductor substrates 有权

    公开(公告)号：US12218171B2

    公开(公告)日：2025-02-04

    申请号：US17854590

    申请日：2022-06-30

    Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.

    Inventor： Seiji Takahashi ,  Jhy-Jyi Sze

    IPC: H01L27/146

    Abstract: Various embodiments of the present disclosure are directed towards an image sensor. The image sensor includes a first semiconductor substrate having a photodetector and a floating diffusion node. A transfer gate is disposed over the first semiconductor substrate, where the transfer gate is at least partially disposed between opposite sides of the photodetector. A second semiconductor substrate is vertically spaced from the first semiconductor substrate, where the second semiconductor substrate comprises a first surface and a second surface opposite the first surface. A readout transistor is disposed on the second semiconductor substrate, where the second surface is disposed between the transfer gate and a gate of the readout transistor. A first conductive contact is electrically coupled to the transfer gate and extending vertically from the transfer gate through both the first surface and the second surface.

    Semiconductor device with low random telegraph signal noise
    4.
    发明授权
    Semiconductor device with low random telegraph signal noise 有权

    公开(公告)号：US11569346B2

    公开(公告)日：2023-01-31

    申请号：US17378505

    申请日：2021-07-16

    Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.

    Inventor： Kuo-Yu Chou ,  Seiji Takahashi ,  Shang-Fu Yeh ,  Chih-Lin Lee ,  Chin Yin ,  Calvin Yi-Ping Chao

    IPC: H01L29/06 ,  H01L29/78 ,  H01L29/10 ,  H01L29/08 ,  H01L21/762 ,  H01L21/308

    Abstract: A semiconductor device includes a source/drain diffusion area, a first doped region and a gate. The source/drain diffusion area, defined between a first isolation structure and a second isolation structure, includes a source region, a drain region and a device channel. The first doped region, disposed along a first junction between the device channel and the first isolation structure, is separated from at least one of the source region and the drain region. The first doped region has a dopant concentration higher than that of the device channel. The gate is disposed over the source/drain diffusion area. The first doped region is located within a projected area of the gate onto the source/drain diffusion area, the first isolation structure and the second isolation structure. A length of the first doped region is shorter than a length of the gate in a direction from the source region to the drain region.

    LOW-NOISE IMAGE SENSOR HAVING STACKED SEMICONDUCTOR SUBSTRATES
    6.
    发明申请
    LOW-NOISE IMAGE SENSOR HAVING STACKED SEMICONDUCTOR SUBSTRATES 有权

    公开(公告)号：US20240379720A1

    公开(公告)日：2024-11-14

    申请号：US18782317

    申请日：2024-07-24

    Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.

    Inventor： Seiji Takahashi ,  Jhy-Jyi Sze

    IPC: H01L27/146

    Abstract: Various embodiments of the present disclosure are directed towards an image sensor. The image sensor includes a first semiconductor substrate having a photodetector and a floating diffusion node. A transfer gate is disposed over the first semiconductor substrate, where the transfer gate is at least partially disposed between opposite sides of the photodetector. A second semiconductor substrate is vertically spaced from the first semiconductor substrate, where the second semiconductor substrate comprises a first surface and a second surface opposite the first surface. A readout transistor is disposed on the second semiconductor substrate, where the second surface is disposed between the transfer gate and a gate of the readout transistor. A first conductive contact is electrically coupled to the transfer gate and extending vertically from the transfer gate through both the first surface and the second surface.

    LOW-NOISE IMAGE SENSOR HAVING STACKED SEMICONDUCTOR SUBSTRATES
    7.
    发明申请
    LOW-NOISE IMAGE SENSOR HAVING STACKED SEMICONDUCTOR SUBSTRATES 有权

    公开(公告)号：US20220336515A1

    公开(公告)日：2022-10-20

    申请号：US17854590

    申请日：2022-06-30

    Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.

    Inventor： Seiji Takahashi ,  Jhy-Jyi Sze

    IPC: H01L27/146

    Abstract: Various embodiments of the present disclosure are directed towards an image sensor. The image sensor includes a first semiconductor substrate having a photodetector and a floating diffusion node. A transfer gate is disposed over the first semiconductor substrate, where the transfer gate is at least partially disposed between opposite sides of the photodetector. A second semiconductor substrate is vertically spaced from the first semiconductor substrate, where the second semiconductor substrate comprises a first surface and a second surface opposite the first surface. A readout transistor is disposed on the second semiconductor substrate, where the second surface is disposed between the transfer gate and a gate of the readout transistor. A first conductive contact is electrically coupled to the transfer gate and extending vertically from the transfer gate through both the first surface and the second surface.

    PIXEL DEVICE ON DEEP TRENCH ISOLATION (DTI) STRUCTURE FOR IMAGE SENSOR
    8.
    发明申请
    PIXEL DEVICE ON DEEP TRENCH ISOLATION (DTI) STRUCTURE FOR IMAGE SENSOR 有权

    公开(公告)号：US20220328537A1

    公开(公告)日：2022-10-13

    申请号：US17853037

    申请日：2022-06-29

    Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.

    Inventor： Seiji Takahashi ,  Jhy-Jyi Sze ,  Tzu-Hsiang Chen

    IPC: H01L27/146 ,  H01L21/02

    Abstract: The present disclosure relates to a CMOS image sensor. The image sensor comprises a pixel region comprising a photodiode disposed within a substrate. A deep trench isolation (DTI) ring encloses the photodiode from top view and extends from a back-side to a first position within the substrate from cross-sectional view. A pair of shallow trench isolation (STI) structures is respectively disposed at an inner periphery and an outer periphery sandwiching the DTI ring from top view and extends from a front-side to a second position within the substrate from cross-sectional view. A pixel device is disposed at the front-side of the substrate directly overlying the DTI ring. The pixel device comprises a gate electrode disposed over the substrate and a pair of source/drain (S/D) regions disposed within the substrate and reaching on a top surface of the DTI ring.

    LOW NOISE VERTICAL GATE DEVICE STRUCTURE
    10.
    发明申请
    LOW NOISE VERTICAL GATE DEVICE STRUCTURE 有权

    公开(公告)号：US20210313365A1

    公开(公告)日：2021-10-07

    申请号：US17350380

    申请日：2021-06-17

    Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.

    Inventor： Seiji Takahashi

    IPC: H01L27/146

    Abstract: Various embodiments of the present disclosure are directed towards a method for forming a pixel sensor. The method comprises forming a photodetector in a substrate. The substrate is patterned to define an opening above the photodetector. A gate electrode is formed within the opening, where the gate electrode has a top conductive body overlying a bottom conductive body. A first segment of a sidewall of the top conductive body contacts the bottom conductive body. A floating diffusion node is formed in the substrate laterally adjacent to the gate electrode. A second segment of the sidewall of the top conductive body overlies the floating diffusion node.

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