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公开(公告)号：US11817485B2
公开(公告)日：2023-11-14
申请号：US17227460
申请日：2021-04-12
发明人： Hung Wei Li , Mauricio Manfrini , Sai-Hooi Yeong , Yu-Ming Lin
IPC分类号： H01L21/00 , H01L29/00 , H01L27/00 , H01L29/417 , H01L29/786 , H01L21/768 , H01L29/40 , H01L29/66
CPC分类号： H01L29/41733 , H01L21/76802 , H01L21/76877 , H01L29/401 , H01L29/66969 , H01L29/7869
摘要： Field effect transistors and method of making. The field effect transistors include a pair of active regions in a channel layer, a channel region located between the pair of active regions and a self-aligned passivation layer located on a surface of the pair of active regions.
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公开(公告)号：US12125920B2
公开(公告)日：2024-10-22
申请号：US18191567
申请日：2023-03-28
IPC分类号： H01L29/66 , H01L29/10 , H01L29/786
CPC分类号： H01L29/78696 , H01L29/1054 , H01L29/66765 , H01L29/66969 , H01L29/78669 , H01L29/78678 , H01L29/7869
摘要： A transistor device and method of making the same, the transistor device including: a substrate; a word line disposed on the substrate; a gate insulating layer disposed on the word line; a dual-layer semiconductor channel including: a first channel layer disposed on the gate insulating layer; and a second channel layer disposed on the first channel layer, such that the second channel layer contacts side and top surfaces of the first channel layer; and source and drain electrodes electrically coupled to the second channel layer. When a voltage is applied to the word line, the first channel layer has a first electrical resistance and the second channel layer has a second electrical resistance that is different from the first electrical resistance.
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公开(公告)号：US11646379B2
公开(公告)日：2023-05-09
申请号：US17228392
申请日：2021-04-12
IPC分类号： H01L29/76 , H01L29/786 , H01L29/66 , H01L29/10
CPC分类号： H01L29/78696 , H01L29/1054 , H01L29/66765 , H01L29/66969 , H01L29/7869 , H01L29/78669 , H01L29/78678
摘要： A transistor device and method of making the same, the transistor device including: a substrate; a word line disposed on the substrate; a gate insulating layer disposed on the word line; a dual-layer semiconductor channel including: a first channel layer disposed on the gate insulating layer; and a second channel layer disposed on the first channel layer, such that the second channel layer contacts side and top surfaces of the first channel layer; and source and drain electrodes electrically coupled to the second channel layer. When a voltage is applied to the word line, the first channel layer has a first electrical resistance and the second channel layer has a second electrical resistance that is different from the first electrical resistance.
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公开(公告)号：US11923459B2
公开(公告)日：2024-03-05
申请号：US17228534
申请日：2021-04-12
发明人： Hung Wei Li , Mauricio Manfrini , Sai-Hooi Yeong , Yu-Ming Lin
IPC分类号： H01L29/786 , H01L29/40 , H01L29/417 , H01L29/423 , H01L29/66 , H10B51/30 , H10B51/40 , H10B61/00 , H10B63/00
CPC分类号： H01L29/78618 , H01L29/401 , H01L29/41733 , H01L29/41775 , H01L29/42384 , H01L29/66742 , H01L29/78642 , H01L29/7869 , H01L29/78696 , H10B51/30 , H10B51/40 , H10B61/22 , H10B63/34 , H10B63/80
摘要： A thin film transistor and method of making the same, the thin film transistor including: a substrate; a word line disposed on the substrate; a semiconductor layer disposed on the substrate, the semiconductor layer having a source region, a drain region, and a channel region disposed between the source and drain regions and overlapping with the word line in a vertical direction perpendicular to a plane of the substrate; a hydrogen diffusion barrier layer overlapping with the channel region in the vertical direction; a gate dielectric layer disposed between the channel region and the word line; and source and drain electrodes respectively electrically coupled to the source and drain regions.
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