Magnet Structure and Cathode Electrode Unit for Magnetron Sputtering, and Magnetron Sputtering System
    1.
    发明申请
    Magnet Structure and Cathode Electrode Unit for Magnetron Sputtering, and Magnetron Sputtering System 有权
    用于磁控溅射的磁体结构和阴极电极单元和磁控溅射系统

    公开(公告)号:US20100230282A1

    公开(公告)日:2010-09-16

    申请号:US12067908

    申请日:2006-08-23

    IPC分类号: C23C14/35

    摘要: A magnet structure and the like are provided, which can reduce the labor required to make a magnet design for producing a tunnel-shaped leakage magnetic field for plasma confinement in a well-balanced manner over an obverse surface of a target, based on a quadridirectional magnetic field produced by magnetic interaction between plural magnets. The magnet structure (110) includes: inner and outer magnets (10 and 13) positioned at a reverse surface side of a target (20) to have different magnetic moment orientations for producing a first magnetic force line reaching an obverse surface (20A) of the target (20); a pair of intermediate magnets (11 and 12) positioned at the reverse surface side of the target (20) and between the inner and outer magnets (10 and 13) to have different magnetic moment orientations, for producing a second magnetic force line acting to cancel a widthwise magnetic flux density component which is produced by the first magnetic force line; and a magnetic member (24) positioned at the reverse surface side of the target (20) to guide the second magnetic force line emanating from an end surface of one of the pair of intermediate magnets (11 and 12) into an end surface of the other, the magnetic member (24) being configured to produce a magnetic force line reaching an intermediate point in a thickness direction of the target (20) in association with the inner magnet (10) or the outer magnet (L3).

    摘要翻译: 提供了磁体结构等,其可以减少制造磁体设计所需的劳动,以便以目标的正面以良好平衡的方式产生用于等离子体约束的隧道状泄漏磁场,基于四向 由多个磁体之间的磁相互作用产生的磁场。 磁体结构(110)包括:位于目标(20)的反面侧的内外磁体(10和13),以具有不同的磁矩取向,用于产生到达正面(20A)的第一磁力线 目标(20); 位于目标(20)的反面侧并且在内磁体(10和13)之间的一对中间磁体(11和12)具有不同的磁矩取向,以产生作用于 取消由第一磁力线产生的宽度方向磁通密度分量; 以及定位在所述靶(20)的所述反面侧的磁性构件(24),以将从所述一对中间磁体(11和12)中的一个的端面发出的所述第二磁力线引导到所述一对中间磁体 另一方面,磁性构件(24)被构造为产生与内磁体(10)或外磁体(L3)相关联地到达目标(20)的厚度方向的中间点的磁力线。

    Magnet Structure and Cathode Electrode Unit for Magnetron Sputtering System, and Magnetron Sputtering System
    2.
    发明申请
    Magnet Structure and Cathode Electrode Unit for Magnetron Sputtering System, and Magnetron Sputtering System 审中-公开
    磁控溅射系统的磁体结构和阴极电极单元,以及磁控溅射系统

    公开(公告)号:US20090229977A1

    公开(公告)日:2009-09-17

    申请号:US12090465

    申请日:2006-11-02

    IPC分类号: C23C14/35

    摘要: Provided are a magnet structure and the like capable of changing a magnetic force line distribution on a surface of a target to thereby achieve wide erosion of a target, using a simple drive mechanism. A magnet structure (110) comprises a main magnet (10, 13) disposed at a reverse surface (20B) side of a target (20) to produce a main magnetic force line reaching an obverse surface (20A) of the target, an adjustment magnet (11) disposed at the reverse surface (20B) side of the target (20) to produce an adjustment magnetic force line for changing a magnetic flux density distribution produced by the main magnetic force line, a magnetic path (21A, 21B, 24) of the adjustment magnetic force line which is disposed at the reverse surface (20B) side of the target 20, and a magnetic field adjustment means (12, 14) configured to be able to change strength of the adjustment magnetic force line passing through inside of the magnetic path (21A, 21B, 24).

    摘要翻译: 提供了能够使用简单的驱动机构改变目标表面上的磁力线分布从而实现目标的广泛侵蚀的磁体结构等。 磁体结构(110)包括设置在目标(20)的反面(20B)侧的主磁体(10,13),以产生到达目标的正面(20A)的主磁力线,调节 设置在所述目标(20)的所述反面(20B)侧的磁体(11),以产生用于改变由所述主磁力线产生的磁通密度分布的调节磁力线,磁路(21A,21B,24 )设置在靶20的反面(20B)侧的调整用磁力线以及能够改变通过内侧的调节用磁力线的强度的磁场调整单元(12,14) 的磁路(21A,21B,24)。

    Magnet structure and cathode electrode unit for magnetron sputtering, and magnetron sputtering system
    3.
    发明授权
    Magnet structure and cathode electrode unit for magnetron sputtering, and magnetron sputtering system 有权
    用于磁控溅射的磁体结构和阴极单元,以及磁控溅射系统

    公开(公告)号:US08608918B2

    公开(公告)日:2013-12-17

    申请号:US12067908

    申请日:2006-08-23

    IPC分类号: H01J37/34

    摘要: A magnet structure and the like are provided, which can reduce the labor required to make a magnet design for producing a tunnel-shaped leakage magnetic field for plasma confinement in a well-balanced manner over an obverse surface of a target, based on a quadridirectional magnetic field produced by magnetic interaction between plural magnets. The magnet structure (110) includes: inner and outer magnets (10 and 13) positioned at a reverse surface side of a target (20) to have different magnetic moment orientations for producing a first magnetic force line reaching an obverse surface (20A) of the target (20); a pair of intermediate magnets (11 and 12) positioned at the reverse surface side of the target (20) and between the inner and outer magnets (10 and 13) to have different magnetic moment orientations, for producing a second magnetic force line acting to cancel a widthwise magnetic flux density component which is produced by the first magnetic force line; and a magnetic member (24) positioned at the reverse surface side of the target (20) to guide the second magnetic force line emanating from an end surface of one of the pair of intermediate magnets (11 and 12) into an end surface of the other, the magnetic member (24) being configured to produce a magnetic force line reaching an intermediate point in a thickness direction of the target (20) in association with the inner magnet (10) or the outer magnet (13).

    摘要翻译: 提供了磁体结构等,其可以减少制造磁体设计所需的劳动,以便以目标的正面以良好平衡的方式产生用于等离子体约束的隧道状泄漏磁场,基于四向 由多个磁体之间的磁相互作用产生的磁场。 磁体结构(110)包括:位于目标(20)的反面侧的内外磁体(10和13),以具有不同的磁矩取向,用于产生到达正面(20A)的第一磁力线 目标(20); 位于目标(20)的反面侧并且在内磁体(10和13)之间的一对中间磁体(11和12)具有不同的磁矩取向,以产生作用于 取消由第一磁力线产生的宽度方向磁通密度分量; 以及定位在所述靶(20)的所述反面侧的磁性构件(24),以将从所述一对中间磁体(11和12)中的一个的端面发出的所述第二磁力线引导到所述一对中间磁体 另一方面,磁性构件(24)构造成产生与内磁体(10)或外磁体(13)相关联地到达靶(20)的厚度方向的中间点的磁力线。

    Vacuum Chamber
    4.
    发明申请
    Vacuum Chamber 审中-公开
    真空室

    公开(公告)号:US20090314199A1

    公开(公告)日:2009-12-24

    申请号:US12065263

    申请日:2006-07-21

    IPC分类号: C23C16/455

    CPC分类号: C23C14/564 B01J3/006

    摘要: The present invention provides a vacuum chamber capable of simplifying the structure of the arrangement of a cooling passage. The vacuum chamber of the present invention includes a plurality of wall members, the plurality of the wall members are connected to each other to construct a chamber main body by connection portions where connection surfaces each of which is part of a surface of each wall member are hermetically connected to each other, and at least part of the connection portions are built-in gap type connection portions each of which has a gap extending along the corresponding connection surfaces inside the connection surfaces and in which peripheries of the connection surfaces are hermetically connected to each other by welding.

    摘要翻译: 本发明提供一种能够简化冷却通道的结构的结构的真空室。 本发明的真空室包括多个壁构件,多个壁构件彼此连接,通过连接部分构成腔室主体,连接部分各自是每个壁构件的表面的一部分 并且连接部分的至少一部分是内置的间隙型连接部分,每个连接部分具有沿着连接表面内的对应连接表面延伸的间隙,并且连接表面的外围与气密连接 彼此通过焊接。