公开(公告)号：US08680640B2

公开(公告)日：2014-03-25

申请号：US13462895

申请日：2012-05-03

申请人： Mitsuyoshi Mori ,  Toru Okino ,  Yutaka Hirose ,  Yoshihisa Kato

发明人： Mitsuyoshi Mori ,  Toru Okino ,  Yutaka Hirose ,  Yoshihisa Kato

IPC分类号： H01L27/148

CPC分类号： H01L27/14645 ,  H01L27/14603 ,  H01L27/14609 ,  H01L27/14621 ,  H01L27/1463 ,  H01L27/14632 ,  H01L27/1464

摘要： A solid-state imaging device includes semiconductor substrate; a plurality of photoelectric conversion sections of n-type that are formed at an upper part of semiconductor substrate and arranged in a matrix; output circuit that is formed on a charge detection surface that is one surface of semiconductor substrate and detects charges stored in photoelectric conversion sections; a plurality of isolating diffusion layers of a p-type that are formed under output circuit and include high concentration p-type layers adjacent to respective photoelectric conversion sections; and color filters formed on a light incident surface that is the other surface opposing the one surface of semiconductor substrate and transmit light with different wavelengths. Shapes of respective photoelectric conversion sections correspond to color filters and differ depending on the high concentration p-type layer configuring isolating diffusion layer.

摘要翻译： 固态成像装置包括半导体衬底; 多个n型光电转换部，形成在半导体衬底的上部并且以矩阵形式布置; 输出电路，其形成在作为半导体衬底的一个表面的电荷检测表面上，并检测存储在光电转换部中的电荷; 多个形成在输出电路下的p型隔离扩散层，并且包括与各个光电转换部分相邻的高浓度p型层; 以及形成在作为与半导体衬底的一个表面相对的另一表面的光入射表面上并且透射具有不同波长的光的滤色器。 各个光电转换部分的形状对应于滤色器，并且根据构成隔离扩散层的高浓度p型层而不同。

公开(公告)号：US08704321B2

公开(公告)日：2014-04-22

申请号：US13462889

申请日：2012-05-03

申请人： Toru Okino ,  Yoshihisa Kato ,  Yutaka Hirose ,  Mitsuyoshi Mori

发明人： Toru Okino ,  Yoshihisa Kato ,  Yutaka Hirose ,  Mitsuyoshi Mori

IPC分类号： H01L29/51

CPC分类号： H01L27/14625 ,  H01L27/1464 ,  H01L27/14665 ,  H01L27/14685

摘要： Solid-state imaging device of the present invention is a backside-illumination-type solid-state imaging device including wiring layer formed on first surface side of semiconductor substrate; and light receiving section that photoelectrically converts light incident from second surface side that is opposite from first surface side, wherein spontaneous polarization film formed of a material having spontaneous polarization is formed on a light receiving surface of light receiving section. Accordingly, a hole accumulation layer can be formed on the light receiving surface of light receiving section, and a dark current can be suppressed.

摘要翻译： 本发明的固体摄像装置是在半导体基板的第一面侧形成有配线层的背照明型固体摄像元件， 以及光接收从第一表面侧相反的第二表面侧入射的光的光接收部分，其中由具有自发极化的材料形成的自发偏振膜形成在光接收部分的光接收表面上。 因此，能够在受光部的受光面上形成空穴积聚层，能够抑制暗电流。

公开(公告)号：US09608279B2

公开(公告)日：2017-03-28

申请号：US14363532

申请日：2011-12-09

申请人： Yutaka Hirose

发明人： Yutaka Hirose

IPC分类号： H01M12/08 ,  H01M4/96 ,  H01M12/06

CPC分类号： H01M4/96 ,  H01M12/06 ,  H01M12/08 ,  H01M2300/0028 ,  H01M2300/0045 ,  Y02E60/50

摘要： Provided is a metal-air battery which has higher discharge capacity than conventional metal-air batteries. The present invention is a metal-air battery, which comprises a positive electrode layer, a negative electrode layer and an electrolyte layer that is arranged between the positive electrode layer and the negative electrode layer, and wherein the positive electrode layer contains a carbon material and is provided with two or more through holes that penetrate the positive electrode layer in the thickness direction.

公开(公告)号：US07847319B2

公开(公告)日：2010-12-07

申请号：US11984723

申请日：2007-11-21

申请人： Yutaka Hirose ,  Yoshito Ikeda ,  Kaoru Inoue

发明人： Yutaka Hirose ,  Yoshito Ikeda ,  Kaoru Inoue

IPC分类号： H01L31/0328 ,  H01L31/0336 ,  H01L31/072 ,  H01L31/109

CPC分类号： H01L21/28581 ,  H01L29/2003 ,  H01L29/42316 ,  H01L29/475 ,  H01L29/66462

摘要： A semiconductor device has a Group III nitride semiconductor layer and a gate electrode formed on the Group III nitride semiconductor layer. The gate electrode contains an adhesion enhancing element. A thermally oxidized insulating film is interposed between the Group III nitride semiconductor layer and the gate electrode.

摘要翻译： 半导体器件具有形成在III族氮化物半导体层上的III族氮化物半导体层和栅电极。 栅极电极含有粘附增强元件。 在III族氮化物半导体层和栅电极之间插入热氧化绝缘膜。

公开(公告)号：US07449399B2

公开(公告)日：2008-11-11

申请号：US11527695

申请日：2006-09-27

申请人： Kaoru Inoue ,  Yoshito Ikeda ,  Yutaka Hirose ,  Katsunori Nishii

发明人： Kaoru Inoue ,  Yoshito Ikeda ,  Yutaka Hirose ,  Katsunori Nishii

IPC分类号： H01L21/26

CPC分类号： H01L29/66878 ,  H01L21/28575 ,  H01L29/2003 ,  H01L29/452 ,  H01L29/66462 ,  H01L29/8126

摘要： A semiconductor device has an active region composed of a group III-V nitride semiconductor and ohmic electrodes and a gate electrode each formed on the active region. The active region has an entire surface thereof exposed to a plasma such that a surface potential for electrons therein is lower than in the case where the entire surface is not exposed to the plasma.

摘要翻译： 半导体器件具有由III-V族氮化物半导体和欧姆电极构成的有源区域和分别形成在有源区域上的栅电极。 有源区域的整个表面暴露于等离子体，使得其中的电子的表面电位低于整个表面不暴露于等离子体的情况。

公开(公告)号：US07291872B2

公开(公告)日：2007-11-06

申请号：US11193417

申请日：2005-08-01

申请人： Masahiro Hikita ,  Hiroaki Ueno ,  Yutaka Hirose ,  Manabu Yanagihara ,  Yasuhiro Uemoto ,  Tsuyoshi Tanaka

发明人： Masahiro Hikita ,  Hiroaki Ueno ,  Yutaka Hirose ,  Manabu Yanagihara ,  Yasuhiro Uemoto ,  Tsuyoshi Tanaka

IPC分类号： H01L31/00

CPC分类号： H01L29/7787 ,  H01L29/2003 ,  H01L29/402 ,  H01L29/4175

摘要： In the structure of a semiconductor device of the present invention, a first source electrode is connected to a conductive substrate through a via hole, and a second source electrode is formed. Thus, even if a high reverse voltage is applied between a gate electrode and a drain electrode, electric field concentration likely to occur at an edge of the gate electrode closer to the drain electrode can be effectively dispersed or relaxed. Moreover, the conductive substrate is used as a substrate for forming element formation layers, so that a via hole penetrating the substrate to reach the backside thereof does not have to be formed in the conductive substrate. Thus, with the strength necessary for the conductive substrate maintained, the first source electrode can be electrically connected to a backside electrode.

摘要翻译： 在本发明的半导体器件的结构中，第一源极通过通孔与导电性基板连接，形成第二源电极。 因此，即使在栅电极和漏电极之间施加高的反向电压，也可以有效地分散或放松更靠近漏电极的栅电极的边缘处可能发生的电场集中。 此外，导电性基板用作形成元件形成层的基板，从而不必在导电性基板上形成贯穿基板到达其背面的通路孔。 因此，由于保持导电基板所需的强度，第一源电极可以电连接到背面电极。

公开(公告)号：US07247891B2

公开(公告)日：2007-07-24

申请号：US10970026

申请日：2004-10-22

申请人： Atsuhiko Kanda ,  Tsuyoshi Tanaka ,  Yasuhiro Uemoto ,  Yutaka Hirose ,  Tomohiro Murata

发明人： Atsuhiko Kanda ,  Tsuyoshi Tanaka ,  Yasuhiro Uemoto ,  Yutaka Hirose ,  Tomohiro Murata

IPC分类号： H01L29/739

CPC分类号： H01L29/7787 ,  H01L27/14609 ,  H01L27/1463 ,  H01L27/14636 ,  H01L27/14656 ,  H01L29/2003 ,  H01L29/66462

摘要： A semiconductor device has a first nitride semiconductor layer, a second nitride semiconductor layer formed on the first nitride semiconductor layer and having such a composition as to generate a 2-dimensional electron gas layer in the upper portion of the first nitride semiconductor layer, and an electrode having an ohmic property and formed selectively on the second nitride semiconductor layer. The second nitride semiconductor layer includes a contact area having at least one inclined portion with a bottom or wall surface thereof being inclined toward the upper surface of the first nitride semiconductor layer and defining a depressed cross-sectional configuration. The electrode is formed on the contact area.

摘要翻译： 半导体器件具有第一氮化物半导体层，形成在第一氮化物半导体层上的第二氮化物半导体层，并具有在第一氮化物半导体层的上部产生二维电子气层的组成， 电极，其选择性地形成在第二氮化物半导体层上。 第二氮化物半导体层包括具有至少一个倾斜部分的接触区域，其底部或壁表面朝向第一氮化物半导体层的上表面倾斜并且限定凹陷的横截面构型。 电极形成在接触区域上。

公开(公告)号：US20070020896A1

公开(公告)日：2007-01-25

申请号：US11527695

申请日：2006-09-27

申请人： Kaoru Inoue ,  Yoshito Ikeda ,  Yutaka Hirose ,  Katsunori Nishii

发明人： Kaoru Inoue ,  Yoshito Ikeda ,  Yutaka Hirose ,  Katsunori Nishii

IPC分类号： H01L21/26 ,  H01L21/28

CPC分类号： H01L29/66878 ,  H01L21/28575 ,  H01L29/2003 ,  H01L29/452 ,  H01L29/66462 ,  H01L29/8126

摘要： A semiconductor device has an active region composed of a group III-V nitride semiconductor and ohmic electrodes and a gate electrode each formed on the active region. The active region has an entire surface thereof exposed to a plasma such that a surface potential for electrons therein is lower than in the case where the entire surface is not exposed to the plasma.

摘要翻译： 半导体器件具有由III-V族氮化物半导体和欧姆电极构成的有源区域和分别形成在有源区域上的栅电极。 有源区域的整个表面暴露于等离子体，使得其中的电子的表面电位低于整个表面不暴露于等离子体的情况。

公开(公告)号：US20060289894A1

公开(公告)日：2006-12-28

申请号：US11455631

申请日：2006-06-20

申请人： Tomohiro Murata ,  Yutaka Hirose ,  Yoshito Ikeda ,  Tsuyoshi Tanaka ,  Kaoru Inoue ,  Daisuke Ueda ,  Yasuhiro Uemoto

发明人： Tomohiro Murata ,  Yutaka Hirose ,  Yoshito Ikeda ,  Tsuyoshi Tanaka ,  Kaoru Inoue ,  Daisuke Ueda ,  Yasuhiro Uemoto

IPC分类号： H01L31/00

CPC分类号： H01L29/7787 ,  H01L21/02425 ,  H01L21/02458 ,  H01L21/0254 ,  H01L29/2003 ,  H01L29/4175 ,  H01L29/41766

摘要： A semiconductor device has: a buffer layer formed on a conductive substrate and made of AlxGa1−xN with a high resistance; an element-forming layer formed on the buffer layer, having a channel layer, and made of undoped GaN and N-type AlyGa1−N; and a source electrode, a drain electrode and a gate electrode which are selectively formed on the element-forming layer. The source electrode is filled in a through hole provided in the buffer layer and the element-forming layer, and is thus electrically connected to the conductive substrate.

摘要翻译： 半导体器件具有：形成在导电衬底上并具有高电阻的Al x Ga 1-x N的缓冲层; 形成在缓冲层上的元件形成层，具有沟道层，并由未掺杂的GaN和N型Al x Ga 1 -N构成; 以及选择性地形成在元件形成层上的源电极，漏电极和栅电极。 源电极被填充在设置在缓冲层和元件形成层中的通孔中，因此电连接到导电基板。

公开(公告)号：US20060124960A1

公开(公告)日：2006-06-15

申请号：US11299818

申请日：2005-12-13

申请人： Yutaka Hirose ,  Tsuyoshi Tanaka

发明人： Yutaka Hirose ,  Tsuyoshi Tanaka

IPC分类号： H01L31/109

CPC分类号： H01L27/0605 ,  H01L21/84 ,  H01L27/1203 ,  H01L29/2003 ,  H01L29/66462 ,  H01L29/7787

摘要： A semiconductor device includes a semiconductor substrate of n-type silicon including, in an upper portion thereof, a first polarity inversion region and a second polarity inversion regions spaced from each other and doped with a p-type impurity. A first HFET including a first active layer and a second HFET including a second active layer both made of a group Ill-V nitride semiconductor are independently formed on the respective polarity inversion regions in the semiconductor substrate, and the HFETs are electrically connected to each other through interconnects.

摘要翻译： 半导体器件包括n型硅的半导体衬底，在其上部包括彼此间隔开并掺杂有p型杂质的第一极性反转区域和第二极性反转区域。 包括第一有源层的第一HFET和包括由III-V族氮化物半导体组成的第二有源层的第二HFET分别独立地形成在半导体衬底中的相应的极性反转区域上，并且HFET彼此电连接 通过互连。