利索-全球专利检索

  1. 登录
  2. 注册

搜索结果

19 条记录 (耗时 0.025 秒)

    Benzolactam derivatives
    5.
    发明授权
    Benzolactam derivatives 失效
    苯内酰胺衍生物

    公开(公告)号：US5652232A

    公开(公告)日：1997-07-29

    申请号：US615286

    申请日：1996-05-24

    申请人： Koichi Shudo ,  Yasuyuki Endo ,  Tamio Fujiwara ,  Akihiko Sato

    发明人： Koichi Shudo ,  Yasuyuki Endo ,  Tamio Fujiwara ,  Akihiko Sato

    IPC分类号： C07D245/06 ,  A61K31/395

    CPC分类号： C07D245/06

    摘要： A benzolactam derivative represented by the following formula (I): ##STR1## wherein n represents an integer of from 1 to 3; R.sup.1 represents a straight- or branched-chain alkyl group or an aralkyl group; R.sup.2 represents a straight- or branched-chain alkyl group; R.sup.3 and R.sup.4 independently represent a hydrogen atom or a straight- or branched-chain alkyl group, and when R.sup.3 and R.sup.4 are adjacent each other on the phenyl group, they may be combined to form a cycloalkyl ring together with two carbon atoms of the phenyl group to which R.sup.3 and R.sup.4 bind, and said cycloalkyl ring may optionally have one or more substituents; and a anti-retroviral agent comprising the same as an active ingredient.

    摘要翻译： PCT No.PCT / JP94 / 01561 Sec。 371日期：1996年5月24日 102（e）日期1996年5月24日PCT 1994年9月22日PCT公布。 公开号WO95 / 09160 日期：1995年4月6日由下式（I）表示的苯并内酰胺衍生物：其中n表示1〜3的整数， R1表示直链或支链烷基或芳烷基; R2表示直链或支链烷基; R3和R4独立地表示氢原子或直链或支链烷基，当R3和R4在苯基上彼此相邻时，它们可以与苯基的两个碳原子一起形成环烷基环 R 3和R 4结合的基团，并且所述环烷基环可任选地具有一个或多个取代基; 和包含其作为活性成分的抗逆转录病毒剂。

    Solid-state imaging device and imaging apparatus
    6.
    发明授权
    Solid-state imaging device and imaging apparatus 失效
    固态成像装置和成像装置

    公开(公告)号：US08421892B2

    公开(公告)日：2013-04-16

    申请号：US13069631

    申请日：2011-03-23

    申请人： Yasuyuki Endo ,  Hiroshi Toya

    发明人： Yasuyuki Endo ,  Hiroshi Toya

    IPC分类号： H04N5/335

    CPC分类号： H04N5/3742 ,  H04N5/357

    摘要： A solid-state imaging device includes: an image area including pixels arranged in a matrix; two row memories each of which alternatively (i) stores at a time pixel signals for each of rows, and (ii) sequentially provides each of the stored pixel signals; a reading control unit, during a horizontal period, sequentially reading the stored pixel signals one by one from a first line memory to cause the first line memory, the first line memory representing one of the two row memories; a holding control unit causing, during the horizontal period, a second line memory to hold pixel signals provided from one of the rows in the image area, the second line memory representing another one of the two row memories; and a reading suspending unit causing the reading control unit to suspend reading out the pixel signals from the first line memory during a noise occurrence predicted period.

    摘要翻译： 固态成像装置包括：包括以矩阵排列的像素的图像区域; 两行存储器中的每一个可选地（i）一次存储每行的像素信号，并且（ii）顺序地提供每个存储的像素信号; 读取控制单元，在水平周期期间，从第一行存储器依次读取所存储的像素信号，以使第一行存储器，第一行存储器表示两行存储器之一; 保持控制单元，在水平周期期间使第二行存储器保持从图像区域中的一行中提供的像素信号，第二行存储器代表两行存储器中的另一个; 以及读取暂停单元，其使读取控制单元在噪声发生预测时段期间暂停从第一行存储器读出像素信号。

    Semiconductor device having solid-state image sensor with suppressed variation in impurity concentration distribution within semiconductor substrate, and method of manufacturing the same
    10.
    发明授权
    Semiconductor device having solid-state image sensor with suppressed variation in impurity concentration distribution within semiconductor substrate, and method of manufacturing the same 失效
    具有抑制半导体衬底内的杂质浓度分布变化的固体摄像元件的半导体装置及其制造方法

    公开(公告)号：US06660553B2

    公开(公告)日：2003-12-09

    申请号：US10232416

    申请日：2002-09-03

    申请人： Masatoshi Kimura ,  Yasuyuki Endo

    发明人： Masatoshi Kimura ,  Yasuyuki Endo

    IPC分类号： H01L2100

    CPC分类号： H01L29/66598 ,  H01L27/14609 ,  H01L27/14689 ,  H01L29/66659 ,  H01L31/035272

    摘要： Photolithography is used to form a photoresist (30) having an opening over an end portion of a gate structure (15) and over a region adjacent to the gate structure (15) where a photodiode (18) is to be formed. Next, using the photoresist (30) as an implantation mask, vertical implantation of N-type impurities (31) such as phosphorus is performed at an energy of 300 to 600 keV and a dose of 1E12 to 1E14 ions/cm2, thereby forming an N-type impurity-introduced region (17) in an upper surface of a P well (11). At this time, the N-type impurities (31) can penetrate through the gate structure (15) to enter into the P well (11), allowing the N-type impurity-introduced region (17) to be also formed under the gate structure (15).

    摘要翻译： 光刻用于形成在栅极结构（15）的端部上方和在栅极结构（15）附近的区域上形成光电二极管（18）的开口的光致抗蚀剂（30）。 接下来，使用光致抗蚀剂（30）作为注入掩模，以300〜600keV的能量和1E12〜1E14离子/ cm 2的剂量进行N型杂质（31）如磷的垂直注入， 从而在P阱（11）的上表面形成N型杂质导入区域（17）。 此时，N型杂质（31）可穿过栅极结构（15）进入P阱（11），允许N型杂质引入区域（17）也形成在栅极 结构（15）。