Method and apparatus for forming an optical surface by optical etching
    1.
    发明授权
    Method and apparatus for forming an optical surface by optical etching 失效
    通过光学蚀刻形成光学表面的方法和装置

    公开(公告)号:US5729344A

    公开(公告)日:1998-03-17

    申请号:US626423

    申请日:1996-04-02

    IPC分类号: G01B11/255 G01B9/02

    CPC分类号: G01B11/255

    摘要: The invention counterbalances the defects of optical glass and optical plastic so as to realize a high precision aspherical processing. The optical lens 1 includes a matrix 2 of optical glass and a coating of optical resin material applied to the surface of the matrix 2. A reflective wavefront of a lens plane 4 of the optical lens 1 is measured by means of a interferometer 5. The wavefront from the interferometer 5 is monitored by a computer system 7 to provide monitoring information. The lens plane 4 is irradiated or scanned with a short wavelength, ultraviolet laser beam L in accordance with the monitoring information, whereby the lens plane 4 is processed with the ultraviolet laser beam in non-contact manner into a shape to provide a most appropriate reflective wavefront.

    摘要翻译: 本发明解决了光学玻璃和光学塑料的缺陷,从而实现了高精度的非球面加工。 光学透镜1包括光学玻璃的矩阵2和施加到矩阵2的表面的光学树脂材料的涂层。通过干涉仪5测量光学透镜1的透镜平面4的反射波前。 来自干涉仪5的波前由计算机系统7监视以提供监视信息。 透镜平面4根据监视信息用短波长的紫外线激光束L进行照射或扫描,由此将透镜平面4以紫外线激光束非接触的方式处理成形状,以提供最合适的反射 波前。

    IC package and LSI package using a lead frame formed of a
copper-zirconium alloy
    2.
    发明授权
    IC package and LSI package using a lead frame formed of a copper-zirconium alloy 失效
    IC封装和LSI封装,使用由铜 - 锆合金形成的引线框架

    公开(公告)号:US5341025A

    公开(公告)日:1994-08-23

    申请号:US35806

    申请日:1993-03-23

    摘要: An IC package and LSI package having a lead frame of a copper alloy that contains 0.1 to 1% by weight of chromium, 0.01 to 0.5% by weight of zirconium and that has partial discolored regions caused by unbalanced precipitation of the zirconium distributed thereon at a rate of 2 grains/100 cm.sup.2 or less is disclosed. The lead frame is, for example, obtained from an alloy that contains 0,005% by weight of sulfur or less. The lead frame has high reliability, can be produced in high yield and has high electrical conductivity.

    摘要翻译: 一种IC封装和LSI封装,其具有铜合金的引线框架,其包含0.1至1重量%的铬,0.01至0.5重量%的锆,并且由于在其上分布有锆的不平衡沉淀引起的部分变色区域 公开了2个/ 100cm 2以下的速度。 引线框架例如由含有0.005重量%以上的硫的合金得到。 引线框架具有高可靠性,可以高产率生产并具有高导电性。

    GETTER MATERIAL AND EVAPORABLE GETTER DEVICE USING THE SAME, AND ELECTRON TUBE
    4.
    发明申请
    GETTER MATERIAL AND EVAPORABLE GETTER DEVICE USING THE SAME, AND ELECTRON TUBE 有权
    使用它的材料和可蒸发的设备,以及电子管

    公开(公告)号:US20100275727A1

    公开(公告)日:2010-11-04

    申请号:US12839230

    申请日:2010-07-19

    IPC分类号: C22B4/06

    摘要: The present invention provides a getter material configured by a pressed powder mixture comprising Ba—Al alloy powder and Ni powder, wherein when the pressed powder mixture is heated in a vacuum atmosphere or an inert gas atmosphere, a temperature at which an exothermic reaction starts is ranging from 750° C. to 900° C. According to this getter material, since the temperature at which the pressed powder mixture starts the exothermic reaction is set within a range from 750° C. to 900° C., there can be provided a getter material and an evaporation type getter device capable of suitably controlling an evaporation amount of getter components under a stable condition, and is excellent in responsiveness because a time ranging from a starting time of heating the getter material to a starting time of evaporation of the getter components can be shortened. In addition, the metal container to be filled with the getter material is free from deformation and melting, and a heat-evaporation process time of the getter material can be shortened, so that there can be provided the evaporation type getter device excellent in responsiveness because a time required for the electron tube to attain to a predetermined vacuum degree can be also shortened.

    摘要翻译: 本发明提供一种由包含Ba-Al合金粉末和Ni粉末的压制粉末混合物构成的吸气剂材料,其中当在真空气氛或惰性气体气氛中加压压粉混合物时,发生放热反应的温度为 根据该吸气剂材料,由于压粉混合物开始放热反应的温度设定在750℃至900℃的范围内,因此可以提供 吸气剂材料和蒸发型吸气装置,其能够在稳定的条件下适当地控制吸气剂组分的蒸发量,并且响应性优异,因为从吸气剂材料的加热开始时间到蒸发的起始时间 吸气剂组分可以缩短。 此外,要填充吸气剂材料的金属容器没有变形和熔化,并且可以缩短吸气剂材料的热蒸发处理时间,从而可以提供响应性优异的蒸发型吸气装置,因为 电子管达到预定真空度所需的时间也可以缩短。

    Getter Material And Evaporable Getter Device Using The Same, And Electron Tube
    5.
    发明申请
    Getter Material And Evaporable Getter Device Using The Same, And Electron Tube 审中-公开
    吸气材料和可蒸发吸气装置使用相同和电子管

    公开(公告)号:US20080012486A1

    公开(公告)日:2008-01-17

    申请号:US11814860

    申请日:2005-01-27

    IPC分类号: H01J29/94 H01J7/18

    摘要: The present invention provides a getter material configured by a pressed powder mixture comprising Ba—Al alloy powder and Ni powder, wherein when the pressed powder mixture is heated in a vacuum atmosphere or an inert gas atmosphere, a temperature at which an exothermic reaction starts is ranging from 750° C. to 900° C. According to this getter material, since the temperature at which the pressed powder mixture starts the exothermic reaction is set within a range from 750° C. to 900° C., there can be provided a getter material and an evaporation type getter device capable of suitably controlling an evaporation amount of getter components under a stable condition, and is excellent in responsiveness because a time ranging from a starting time of heating the getter material to a starting time of evaporation of the getter components can be shortened. In addition, the metal container to be filled with the getter material is free from deformation and melting, and a heat-evaporation process time of the getter material can be shortened, so that there can be provided the evaporation type getter device excellent in responsiveness because a time required for the electron tube to attain to a predetermined vacuum degree can be also shortened.

    摘要翻译: 本发明提供一种由包含Ba-Al合金粉末和Ni粉末的压制粉末混合物构成的吸气剂材料,其中当在真空气氛或惰性气体气氛中加压压粉混合物时,发生放热反应的温度为 根据该吸气剂材料,由于压粉混合物开始放热反应的温度设定在750℃至900℃的范围内,因此可以提供 吸气剂材料和蒸发型吸气装置,其能够在稳定的条件下适当地控制吸气剂组分的蒸发量,并且响应性优异,因为从吸气剂材料的加热开始时间到蒸发的起始时间 吸气剂组分可以缩短。 此外,要填充吸气剂材料的金属容器没有变形和熔化,并且可以缩短吸气剂材料的热蒸发处理时间,从而可以提供响应性优异的蒸发型吸气装置,因为 电子管达到预定真空度所需的时间也可以缩短。

    Lead frame formed of a copper-zirconium alloy
    6.
    发明授权
    Lead frame formed of a copper-zirconium alloy 失效
    铜合金的铅框架

    公开(公告)号:US5210441A

    公开(公告)日:1993-05-11

    申请号:US810426

    申请日:1991-12-20

    IPC分类号: C22C9/00 H01L23/495

    摘要: A lead frame comprising a copper alloy containing 0.1 to 1 % by weight of chromium, 0.01 to 0.5% by weight of zirconium and having partial discolored regions caused by unbalanced precipitation of the zirconium distributed thereon at a rate of 2 grains/100 cm.sup.2 or less. The lead frame is, for example, obtained by an alloy containing 0.005% by weight of sulphur or less. The lead frame has an high reliability, high yield of production and high electrical conductivity.

    Sputtering target, manufacturing method thereof, and manufacturing method of semiconductor element
    7.
    发明授权
    Sputtering target, manufacturing method thereof, and manufacturing method of semiconductor element 有权
    溅射靶,其制造方法和半导体元件的制造方法

    公开(公告)号:US09382613B2

    公开(公告)日:2016-07-05

    申请号:US13608406

    申请日:2012-09-10

    IPC分类号: C23C14/34

    CPC分类号: C23C14/3414

    摘要: According to an embodiment, two or more sets of knead forging are performed where one set is cold forging processes in directions parallel to and perpendicular to a thickness direction of a columnar titanium material. The titanium material is heated to a temperature of 700° C. or more to induce recrystallization, and thereafter, two or more sets of knead forging are performed where one set is the cold forging processes in the directions parallel to and perpendicular to the thickness direction. Further, the titanium material is cold rolled, and is heat-treated to a temperature of 300° C. or more.

    摘要翻译: 根据一个实施例,执行两组或更多组揉锻,其中一组是在与柱状钛材料的厚度方向平行且垂直的方向上的冷锻工艺。 将钛材料加热至700℃以上的温度以引起再结晶,然后进行两组以上的揉锻,其中一组是在与厚度方向平行且垂直的方向上的冷锻工艺 。 此外,将钛材料冷轧,并且被热处理至300℃以上的温度。

    Getter material and evaporable getter device using the same, and electron tube
    8.
    发明授权
    Getter material and evaporable getter device using the same, and electron tube 有权
    吸气材料和蒸发吸气装置使用相同的电子管

    公开(公告)号:US07927167B2

    公开(公告)日:2011-04-19

    申请号:US12839230

    申请日:2010-07-19

    IPC分类号: H01J9/39 H01J9/38

    摘要: The present invention provides a getter material configured by a pressed powder mixture comprising Ba—Al alloy powder and Ni powder, wherein when the pressed powder mixture is heated in a vacuum atmosphere or an inert gas atmosphere, a temperature at which an exothermic reaction starts is ranging from 750° C. to 900° C. According to this getter material, since the temperature at which the pressed powder mixture starts the exothermic reaction is set within a range from 750° C. to 900° C., there can be provided a getter material and an evaporation type getter device capable of suitably controlling an evaporation amount of getter components under a stable condition, and is excellent in responsiveness because a time ranging from a starting time of heating the getter material to a starting time of evaporation of the getter components can be shortened. In addition, the metal container to be filled with the getter material is free from deformation and melting, and a heat-evaporation process time of the getter material can be shortened, so that there can be provided the evaporation type getter device excellent in responsiveness because a time required for the electron tube to attain to a predetermined vacuum degree can be also shortened.

    摘要翻译: 本发明提供一种由包含Ba-Al合金粉末和Ni粉末的压制粉末混合物构成的吸气剂材料,其中当在真空气氛或惰性气体气氛中加压压粉混合物时,发生放热反应的温度为 根据该吸气剂材料,由于压粉混合物开始放热反应的温度设定在750℃至900℃的范围内,因此可以提供 吸气剂材料和蒸发型吸气装置,其能够在稳定的条件下适当地控制吸气剂组分的蒸发量,并且响应性优异,因为从吸气剂材料的加热开始时间到蒸发的起始时间 吸气剂组分可以缩短。 此外,要填充吸气剂材料的金属容器没有变形和熔化,并且可以缩短吸气剂材料的热蒸发处理时间,从而可以提供响应性优异的蒸发型吸气装置,因为 电子管达到预定真空度所需的时间也可以缩短。

    Tantalum sputtering target and method for manufacturing the same, and method for manufacturing semiconductor element
    10.
    发明授权
    Tantalum sputtering target and method for manufacturing the same, and method for manufacturing semiconductor element 有权
    钽溅射靶及其制造方法以及半导体元件的制造方法

    公开(公告)号:US08747633B2

    公开(公告)日:2014-06-10

    申请号:US13470800

    申请日:2012-05-14

    CPC分类号: C22F1/18 C23C14/3414

    摘要: In one embodiment, a method for manufacturing a tantalum sputtering target includes a first knead forging step, a first heating step, a second knead forging step, a cold rolling step, and a second heating step. In the first knead forging step, a tantalum material is subjected to two sets or more of knead forging, each of the sets being cold forging in directions parallel to and perpendicular to a thickness direction. In the second knead forging step, one set or more of knead forging is performed after the first heating step, each of the steps being cold forging in the directions parallel to and perpendicular to the thickness direction.

    摘要翻译: 在一个实施方案中,钽溅射靶的制造方法包括第一揉搓锻造步骤,第一加热步骤,第二揉合锻造步骤,冷轧步骤和第二加热步骤。 在第一次捏合锻造工序中,对钽材料进行两次以上的揉合锻造,各组在与厚度方向平行且垂直的方向上进行冷锻。 在第二捏合锻造步骤中,在第一加热步骤之后进行一次以上的揉锻,每个步骤在与厚度方向平行且垂直的方向上进行冷锻。