-
1.发明授权Chemically-amplified positive resist composition and patterning process thereof 有权化学扩增的正型抗蚀剂组合物及其构图工艺公开(公告)号：US08202677B2
公开(公告)日：2012-06-19
申请号：US12457327
申请日：2009-06-08
CPC分类号： G03F7/0395 , G03F7/0045 , G03F7/0392 , Y10S430/114
摘要： There is disclosed a chemically-amplified positive resist composition comprising, as main components, (A) a base polymer, which contains one or more kinds of a monomer unit represented by the following general formula (1) and the like, and is an alkali-insoluble polymer whose hydroxyl group is partly protected by an acetal group while alkali-soluble when deprotected by an acid catalyst, (B) a sulfonium salt containing a sulfonate anion, (C) a basic component, and (D) an organic solvent. In a lithography technology by a photo resist, an extremely high temporal stability is necessary. In addition, it must give a good pattern profile not dependent on a substrate and have a high resolution power. There can be provided a chemically-amplified positive resist composition which can solve these problems simultaneously, a resist patterning process using the same, and a method for producing a photo mask blank.
摘要翻译： 公开了一种化学增幅正型抗蚀剂组合物，其包含作为主要成分的（A）基质聚合物，其包含一种或多种由以下通式（1）表示的单体单元等，并且为碱 （B）含有磺酸根阴离子的锍盐，（C）碱性成分和（D）有机溶剂，其羟基部分被缩醛基保护而碱溶性的不溶性聚合物。 在通过光刻胶的光刻技术中，需要非常高的时间稳定性。 另外，它必须给出不依赖于衬底并且具有高分辨率功率的良好图案轮廓。 可以提供能够同时解决这些问题的化学放大正性抗蚀剂组合物，使用其的抗蚀剂图案形成工艺以及制造光掩模坯料的方法。
-
2.发明申请Chemically-amplified positive resist composition and patterning process thereof 有权化学扩增的正型抗蚀剂组合物及其构图工艺公开(公告)号：US20100009286A1
公开(公告)日：2010-01-14
申请号：US12457327
申请日：2009-06-08
CPC分类号： G03F7/0395 , G03F7/0045 , G03F7/0392 , Y10S430/114
摘要： There is disclosed a chemically-amplified positive resist composition comprising, as main components, (A) a base polymer, which contains one or more kinds of a monomer unit represented by the following general formula (1) and the like, and is an alkali-insoluble polymer whose hydroxyl group is partly protected by an acetal group while alkali-soluble when deprotected by an acid catalyst, (B) a sulfonium salt containing a sulfonate anion, (C) a basic component, and (D) an organic solvent. In a lithography technology by a photo resist, an extremely high temporal stability is necessary. In addition, it must give a good pattern profile not dependent on a substrate and have a high resolution power. There can be provided a chemically-amplified positive resist composition which can solve these problems simultaneously, a resist patterning process using the same, and a method for producing a photo mask blank.
摘要翻译： 公开了一种化学增幅正型抗蚀剂组合物，其包含作为主要成分的（A）基质聚合物，其包含一种或多种由以下通式（1）表示的单体单元等，并且为碱 （B）含有磺酸根阴离子的锍盐，（C）碱性成分和（D）有机溶剂，其羟基部分被缩醛基保护而碱溶性的不溶性聚合物。 在通过光刻胶的光刻技术中，需要非常高的时间稳定性。 另外，它必须给出不依赖于衬底并且具有高分辨率功率的良好图案轮廓。 可以提供能够同时解决这些问题的化学放大正性抗蚀剂组合物，使用其的抗蚀剂图案形成工艺以及制造光掩模坯料的方法。
-
公开(公告)号：US07977027B2
公开(公告)日：2011-07-12
申请号：US11876298
申请日：2007-10-22
申请人： Takanobu Takeda , Osamu Watanabe , Satoshi Watanabe , Youichi Ohsawa , Ryuji Koitabashi , Tamotsu Watanabe
发明人： Takanobu Takeda , Osamu Watanabe , Satoshi Watanabe , Youichi Ohsawa , Ryuji Koitabashi , Tamotsu Watanabe
CPC分类号： G03F7/0045 , G03F7/0392
摘要： A chemically amplified positive resist composition comprises a compound having an amine oxide structure as a basic component, a base resin, a photoacid generator, and an organic solvent. The resist composition exhibits a high resolution, significantly prevents a line pattern from collapsing after development, and has improved etch resistance.
摘要翻译： 化学放大正型抗蚀剂组合物包含具有胺氧化物结构作为碱性组分的化合物，基础树脂，光酸产生剂和有机溶剂。 抗蚀剂组合物显示高分辨率，显着地防止显影后线图案塌陷，并且具有改善的耐蚀刻性。
-
公开(公告)号：US6156481A
公开(公告)日：2000-12-05
申请号：US428911
申请日：1999-10-28
申请人： Takanobu Takeda , Osamu Watanabe , Jun Watanabe , Jun Hatakeyama , Youichi Ohsawa , Toshinobu Ishihara
发明人： Takanobu Takeda , Osamu Watanabe , Jun Watanabe , Jun Hatakeyama , Youichi Ohsawa , Toshinobu Ishihara
CPC分类号： G03F7/039 , G03F7/0045 , Y10S430/111
摘要： A hydroxystyrene-(meth)acrylate copolymer in which some phenolic hydroxyl groups are crosslinked with acid labile groups is blended as a base resin in a positive resist composition, which has the advantages of enhanced dissolution inhibition and an increased dissolution contrast after exposure.
摘要翻译： 将一些酚羟基与酸不稳定基团交联的羟基苯乙烯 - （甲基）丙烯酸酯共聚物作为基础树脂掺入正性抗蚀剂组合物中，其具有增强的溶解抑制和暴露后溶解度增加的优点。
-
公开(公告)号：US06838224B2
公开(公告)日：2005-01-04
申请号：US09799009
申请日：2001-03-06
申请人： Youichi Ohsawa , Jun Watanabe , Takanobu Takeda , Akihiro Seki
发明人： Youichi Ohsawa , Jun Watanabe , Takanobu Takeda , Akihiro Seki
CPC分类号： G03F7/0392 , Y10S430/106 , Y10S430/111 , Y10S430/115 , Y10S430/12 , Y10S430/121 , Y10S430/122 , Y10S430/126
摘要： A chemical amplification, positive resist composition is provided comprising (A) a photoacid generator and (B) a resin which changes its solubility in an alkali developer under the action of acid and has substituents of the formula: C6H11—(CH2)nOCH(CH2CH3)— wherein C6H11 is cyclohexyl and n=0 or 1. The composition has many advantages including improved focal latitude, improved resolution, minimized line width variation or shape degradation even on long-term PED, minimized defect left after coating, development and stripping, and improved pattern profile after development and is suited for microfabrication by any lithography, especially deep UV lithography.
-
公开(公告)号：US06682869B2
公开(公告)日：2004-01-27
申请号：US09799052
申请日：2001-03-06
申请人： Youichi Ohsawa , Jun Watanabe , Takanobu Takeda , Akihiro Seki
发明人： Youichi Ohsawa , Jun Watanabe , Takanobu Takeda , Akihiro Seki
IPC分类号： G03F7004
CPC分类号： G03F7/0397 , G03F7/0392 , G03F7/0758 , Y10S430/106
摘要： A chemical amplification, positive resist composition is provided comprising (A) a photoacid generator and (B) a resin which changes its solubility in an alkali developer under the action of acid and has substituents of the formula: Ph—(CH2)nOCH(CH2CH3)— wherein Ph is phenyl and n=1 or 2. The composition has many advantages including improved focal latitude, improved resolution, minimized line width variation or shape degradation even on long-term PED, minimized defect left after coating, development and stripping, and improved pattern profile after development and is suited for microfabrication by any lithography, especially deep UV lithography.
摘要翻译： 提供化学放大正性抗蚀剂组合物，其包含（A）光酸产生剂和（B）在酸的作用下改变其在碱显影剂中的溶解度并具有下式的取代基的树脂：Ph-（CH 2）n OCH（CH 2 CH 3 ） - 其中Ph是苯基并且n = 1或2.组合物具有许多优点，包括改进的焦点纬度，改进的分辨率，最小化的线宽变化或形状退化，即使在长期PED上，涂覆后剩余的最小化缺陷，显影和剥离， 并且在显影后改进的图案轮廓，并且适用于通过任何光刻，特别是深UV光刻的微细加工。
-
公开(公告)号：US06653044B2
公开(公告)日：2003-11-25
申请号：US09760716
申请日：2001-01-17
申请人： Takanobu Takeda , Osamu Watanabe , Jun Watanabe , Jun Hatakeyama , Tsunehiro Nishi , Takeshi Kinsho
发明人： Takanobu Takeda , Osamu Watanabe , Jun Watanabe , Jun Hatakeyama , Tsunehiro Nishi , Takeshi Kinsho
IPC分类号： C07C6974
CPC分类号： G03F7/0045 , G03F7/039 , Y10S430/106 , Y10S430/11
摘要： A chemical amplification type resist composition uses as the base resin a polymer having a molecular weight dispersity of 1.0 to 1.5 which is a polymer comprising recurring units of formula (1) and recurring units of formula (2) or a polymer comprising recurring units of formula (2) wherein R1 is alkyl, alkoxyalkyl, acetyl or carbonylalkoxy, 0
摘要翻译： 化学放大型抗蚀剂组合物使用分子量分布为1.0〜1.5的聚合物作为基础树脂，其为包含式（1）的重复单元和式（2）的重复单元的聚合物或包含式 （2）其中R 1是烷基，烷氧基烷基，乙酰基或羰基烷氧基，0
-
公开(公告)号：US06312867B1
公开(公告)日：2001-11-06
申请号：US09431139
申请日：1999-11-01
申请人： Takeshi Kinsho , Tsunehiro Nishi , Hideshi Kurihara , Koji Hasegawa , Takeru Watanabe , Osamu Watanabe , Mutsuo Nakashima , Takanobu Takeda , Jun Hatakeyama
发明人： Takeshi Kinsho , Tsunehiro Nishi , Hideshi Kurihara , Koji Hasegawa , Takeru Watanabe , Osamu Watanabe , Mutsuo Nakashima , Takanobu Takeda , Jun Hatakeyama
IPC分类号： G03F7004
CPC分类号： C07C69/56 , C07C69/013 , C07C69/533 , C07C69/54 , C07C69/593 , C07C69/60 , C07C2602/42 , C07C2603/68 , C07C2603/86 , C08F20/18 , G03F7/0045 , G03F7/039 , Y02P20/55
摘要： A novel ester compound having an exo-form 2-alkylbicyclo[2.2.1]heptan-2-yl group as the protective group is provided as well as a polymer comprising units of the ester compound. The polymer is used as a base resin to formulate a resist composition having a higher sensitivity, resolution and etching resistance than conventional resist compositions.
-
公开(公告)号：US07491483B2
公开(公告)日：2009-02-17
申请号：US11713763
申请日：2007-03-05
申请人： Jun Hatakeyama , Takeshi Kinsho , Takanobu Takeda
发明人： Jun Hatakeyama , Takeshi Kinsho , Takanobu Takeda
CPC分类号： G03F7/0397 , C08F222/20 , C08F224/00 , C08F232/00 , C08F232/08 , Y10S430/106 , Y10S430/111
摘要： A polymer is composed of recurring units of hydroxyvinylnaphthalene, (meth)acrylic units having a lactone ring fused to a bridged ring, and (meth)acrylic units having acid labile groups. A positive resist composition comprising the polymer as a base resin, when exposed to high-energy radiation and developed, exhibits a high sensitivity, a high resolution, and a minimal line edge roughness due to controlled swell during development.
摘要翻译： 聚合物由羟基乙烯基萘的重复单元，具有与桥环稠合的内酯环的（甲基）丙烯酸单元和具有酸不稳定基的（甲基）丙烯酸单元组成。 包含作为基础树脂的聚合物的正性抗蚀剂组合物当暴露于高能量辐射并显影时表现出高灵敏度，高分辨率和由于显影过程中控制的膨胀引起的最小线边缘粗糙度。
-
公开(公告)号：US20070207408A1
公开(公告)日：2007-09-06
申请号：US11713763
申请日：2007-03-05
申请人： Jun Hatakeyama , Takeshi Kinsho , Takanobu Takeda
发明人： Jun Hatakeyama , Takeshi Kinsho , Takanobu Takeda
IPC分类号： G03C1/00
CPC分类号： G03F7/0397 , C08F222/20 , C08F224/00 , C08F232/00 , C08F232/08 , Y10S430/106 , Y10S430/111
摘要： A polymer is composed of recurring units of hydroxyvinylnaphthalene, (meth)acrylic units having a lactone ring fused to a bridged ring, and (meth)acrylic units having acid labile groups. A positive resist composition comprising the polymer as a base resin, when exposed to high-energy radiation and developed, exhibits a high sensitivity, a high resolution, and a minimal line edge roughness due to controlled swell during development.
摘要翻译： 聚合物由羟基乙烯基萘的重复单元，具有与桥环稠合的内酯环的（甲基）丙烯酸单元和具有酸不稳定基的（甲基）丙烯酸单元组成。 包含作为基础树脂的聚合物的正性抗蚀剂组合物当暴露于高能量辐射并显影时表现出高灵敏度，高分辨率和由于显影过程中控制的膨胀引起的最小线边缘粗糙度。
-
-
-
-
-
-
-
-
-
搜索结果
77 条记录 (耗时 0.029 秒)