摘要:
A heater is disposed in contact with a hydrogen storage unit filled with a hydrogen absorption material. The heater includes at least one combustion chamber which includes a catalyst carrier and in which a combustible gas is burned, a combustible gas burning catalyst carried on the catalyst carrier, at least one combustible gas introduction chamber adjoining the combustion chamber with its chamber wall interposed therebetween, a plurality of combustible gas inlets disposed in a dispersed manner in the chamber wall to permit the combustion chamber and the introduction chamber to communicate with each other, and a combustion gas outlet communicating with the combustion chamber. Thus, the degree of uniformity of a temperature profile is decreased.
摘要:
A crystal unit and a thermistor with negative resistance-temperature characteristics are housed in a thermostatic oven heated by a heater. A transistor driving the heater is controlled by an output of a differential amplifier, the thermistor is placed between a power supply voltage and an inverting input of the amplifier, and a first resistor used to adjust the temperature of a zero temperature coefficient point of the crystal unit is installed between the inverting input and a ground point. A second resistor is installed between the power supply voltage and a non-inverting input of the amplifier and a third resistor is installed between the non-inverting input and ground point. One of the second and third resistors is a resistor assembly made up of a plurality of resistance elements and one of these resistance elements is provided with positive resistance-temperature characteristics and adapted to detect ambient temperature.
摘要:
According to the first aspect of the present invention, a drain electrode and a pixel electrode are electrically connected to each other on a protective film formed on a semiconductor active layer, and thereby it is possible to easily connect the drain electrode and the pixel electrode to each other and to improve a yield.
摘要:
Provided is a control circuit for a thermostatic oven in an oven controlled crystal oscillator, which is capable of further improving stability of an oscillation frequency. A control circuit in which a thermistor whose resistance value changes according to a temperature outputs a signal according to the ambient temperature of the thermostatic oven inside the oscillator, an operational amplifier outputs a signal according to a difference between the output of the thermistor and a reference signal, a power transistor amplifies the output of the operational amplifier, and a heater generates heat based on a collector voltage of the power transistor, is provided with a temperature sensor circuit having a transistor with a base to which the output of the operational amplifier is input. The control circuit outputs a collector voltage of the transistor as an internal temperature signal which changes according to a temperature inside the oscillator.
摘要:
One embodiment of the present invention is a method for manufacturing a bottom gate type thin film transistor having a gate electrode, a gate insulating film, an oxide semiconductor active layer, a source electrode and a drain electrode on a flexible plastic substrate of a supporting substrate, the method including continuously forming the gate insulating film and the oxide semiconductor active layer on the flexible plastic substrate with the gate electrode inside a vacuum film formation chamber of a film formation apparatus, the apparatus being a type of winding up continuously the roll-shaped substrate, and the gate insulating film and the oxide semiconductor active layer formed without being exposed to air.
摘要:
A constant-temperature type crystal oscillator includes: a crystal unit including a case main body, in which two crystal terminals and two dummy terminals are provided on an outer bottom face thereof, and a crystal element housed in the case main body; an oscillator output circuit including an oscillating stage and a buffering stage; a temperature control circuit for keeping an operational temperature of the crystal unit; and a circuit substrate, on which circuit elements of the crystal unit, the oscillator output circuit and the temperature control circuit are installed. The temperature control circuit includes: heating chip resistors; a power transistor; and a temperature sensing element. The dummy terminals are connected to a circuit terminal for dummy on the circuit substrate. The circuit terminal for dummy is connected to an electrically-conducting path, to which one terminal of the heating chip resistors is electrically connected, on the circuit substrate.
摘要:
It is an object of the present invention to provide an enzyme preparation which is excellent in stability in blood (blood residence) and in transfer to a target organ (targeting property), and can be used effectively in enzyme replacement therapy or the like.This problem is solved by a lipid vesicle composition wherein vesicles composed of a lipid bilayer membrane are encapsulating an enzyme, the composition being capable of retaining stably the activity of the enzyme even outside the stable pH range of the enzyme.
摘要:
Provided is a control circuit for a thermostatic oven in an oven controlled crystal oscillator, which is capable of further improving stability of an oscillation frequency. A control circuit in which a thermistor whose resistance value changes according to a temperature outputs a signal according to the ambient temperature of the thermostatic oven inside the oscillator, an operational amplifier outputs a signal according to a difference between the output of the thermistor and a reference signal, a power transistor amplifies the output of the operational amplifier, and a heater generates heat based on a collector voltage of the power transistor, is provided with a temperature sensor circuit having a transistor with a base to which the output of the operational amplifier is input. The control circuit outputs a collector voltage of the transistor as an internal temperature signal which changes according to a temperature inside the oscillator.
摘要:
One embodiment of the present invention is a thin film transistor, including: an insulating substrate; a gate electrode, a gate insulating layer and a semiconductor layer including an oxide, these three elements being formed over the insulating substrate in this order, and the gate insulating layer including: a lower gate insulating layer, the lower gate insulating layer being in contact with the insulating substrate and being an oxide including any one of the elements In, Zn or Ga; and an upper gate insulating layer provided on the lower gate insulating layer, the upper gate insulating layer comprising at least one layer; and a source electrode and a drain electrode formed on the semiconductor layer.
摘要:
A liquid crystal display device includes an array substrate and a counter substrate that face each other with a liquid crystal layer therebetween. The array substrate includes a first electrode, a second electrode, and an alignment sustaining layer. The first electrode has a comb-teeth shape. The second electrode has a comb-teeth shape, faces the first electrode, and includes a protruding portion protruding from the first electrode in a direction where comb teeth are arranged. The alignment sustaining layer is formed above a surface of the array substrate being in contact with the liquid crystal layer and gives liquid crystals a pre-tilt to a direction in which the second electrode protrudes from the first electrode, in a direction in which the comb teeth are arranged.