METHOD FOR PRODUCING DIAMOND-LIKE CARBON FILM BODY
    1.
    发明申请
    METHOD FOR PRODUCING DIAMOND-LIKE CARBON FILM BODY 审中-公开
    生产金刚石碳膜体的方法

    公开(公告)号:US20120121817A1

    公开(公告)日:2012-05-17

    申请号:US13331358

    申请日:2011-12-20

    IPC分类号: C23C16/02

    摘要: Provided is a method of manufacturing a DLC film formed body in which peeling-off of a DLC film is suppressed. In manufacturing a DLC film formed body having a film hardness of 10 GPa or more, prior to the formation of the DLC film, a surface of a base is pretreated with a discharge plasma and a silicon carbide film being an interlayer is formed on the surface of the base. The surface of the base is pretreated by supplying an inside of the chamber with a gas mixture obtained by mixing 1 part by volume or more and 10 parts by volume or less of argon gas into 100 parts by volume of helium gas while adjusting a pressure inside of the chamber in which the base is housed to 20 hPa or higher and an atmospheric pressure or lower, and generating a discharge plasma in the mixed.

    摘要翻译: 提供了抑制DLC膜的剥离的DLC膜形成体的制造方法。 在制造膜硬度为10GPa以上的DLC膜形成体时,在形成DLC膜之前,用放电等离子体预处理碱的表面,在表面上形成作为中间层的碳化硅膜 的基地。 通过向腔室内供给通过将1体积份以上10体积体积以下的氩气混合到100体积氦气中,同时调节内部的压力而对所述基体的表面进行预处理 其中所述基座容纳在20hPa以上且大气压以下,并且在所述混合物中产生放电等离子体。

    PULSED POWER SUPPLY
    2.
    发明申请
    PULSED POWER SUPPLY 审中-公开
    脉冲电源

    公开(公告)号:US20080315688A1

    公开(公告)日:2008-12-25

    申请号:US12136113

    申请日:2008-06-10

    IPC分类号: H03K3/64

    CPC分类号: H03K3/64

    摘要: A pulsed power supply includes a DC power source, and a transformer and a switch which are connected in series with each other across the DC power source. The pulsed power supply operates to produce a plurality of high-voltage pulses in a repetition of cycles in each of which an induced energy is stored in the transformer when the switch is turned on and a high-voltage pulse is generated across a secondary winding of the transformer when the switch is turned off. The current flowing through the primary winding of the transformer is controlled to keep its peak value constant. The pulsed power supply further includes a current detector for detecting the current flowing through the primary winding of the transformer, and a third circuit for turning off the switch when the current detected by the current detector reaches the peak value.

    摘要翻译: 脉冲电源包括直流电源以及跨越DC电源彼此串联连接的变压器和开关。 脉冲电源操作以产生多个重复周期的高电压脉冲,其中当开关导通时,感应能量存储在变压器中,并且跨越次级绕组产生高电压脉冲 变压器当开关关闭时。 流过变压器初级绕组的电流被控制以保持其峰值恒定。 脉冲电源还包括用于检测流过变压器的初级绕组的电流的电流检测器,以及当由电流检测器检测到的电流达到峰值时关闭开关的第三电路。

    METHODS OF GENERATING PLASMA, OF ETCHING AN ORGANIC MATERIAL FILM, OF GENERATING MINUS IONS, OF OXIDATION AND NITRIDING
    3.
    发明申请
    METHODS OF GENERATING PLASMA, OF ETCHING AN ORGANIC MATERIAL FILM, OF GENERATING MINUS IONS, OF OXIDATION AND NITRIDING 失效
    产生等离子体的方法,蚀刻有机材料膜,产生阴离子,氧化和氮化

    公开(公告)号:US20080122368A1

    公开(公告)日:2008-05-29

    申请号:US11843771

    申请日:2007-08-23

    IPC分类号: H05H1/00

    摘要: A direct current pulse voltage is applied on a treatment gas to generate a discharge plasma. The duty ratio of the direct current pulse voltage is controlled within the range of 0.0001% or more and 8.0% or less. The rise time of the direct current pulse voltage is controlled in the range of not lower than 0.1 V/nsec and not higher than 10000 V/nsec. Alternatively, a positive pulse and a negative pulse are applied from a single power source for performing the discharge plasma and the impurity implantation.

    摘要翻译: 在处理气体上施加直流脉冲电压以产生放电等离子体。 直流脉冲电压的占空比控制在0.0001%以上且8.0%以下的范围内。 直流脉冲电压的上升时间控制在不低于0.1V / nsec且不高于10000V / ns的范围内。 或者,从用于执行放电等离子体和杂质注入的单个电源施加正脉冲和负脉冲。

    ELECTRIC CIRCUIT, AND PULSE POWER SOURCE
    4.
    发明申请
    ELECTRIC CIRCUIT, AND PULSE POWER SOURCE 有权
    电路和脉冲电源

    公开(公告)号:US20070210837A1

    公开(公告)日:2007-09-13

    申请号:US11683552

    申请日:2007-03-08

    IPC分类号: H03K5/01

    摘要: A pulse power source comprises a first circuit, a second circuit, a transformer for coupling the first circuit and the second circuit, and a switching controller. The second circuit comprises a third semiconductor switch connected in series with a secondary winding of the transformer. The third semiconductor switch is connected in such a direction that a voltage generated in the second circuit is reverse-biased during a period in which the second semiconductor switch is turned on. A gate amplifier for forming a control signal from the switching controller into a pulse and outputting the pulse as a pulse signal is connected between a gate terminal and a cathode terminal of the third semiconductor switch.

    摘要翻译: 脉冲电源包括第一电路,第二电路,用于耦合第一电路和第二电路的变压器以及开关控制器。 第二电路包括与变压器的次级绕组串联连接的第三半导体开关。 第三半导体开关沿着使第二电路中产生的电压在第二半导体开关导通的时段内被反向偏置的方向连接。 用于将来自开关控制器的控制信号形成脉冲并输出脉冲作为脉冲信号的门放大器连接在第三半导体开关的栅极端子和阴极端子之间。

    Method for forming amorphous carbon film
    6.
    发明授权
    Method for forming amorphous carbon film 失效
    形成无定形碳膜的方法

    公开(公告)号:US07923377B2

    公开(公告)日:2011-04-12

    申请号:US12396621

    申请日:2009-03-03

    IPC分类号: H01L21/31

    摘要: An amorphous carbon film forming apparatus includes a supporting electrode that is connected to ground and supports a substrate, a counter electrode that is disposed so as to face the supporting electrode and has a mixed-gas injection orifice, a chamber containing the supporting electrode and the counter electrode, and a DC pulse generator having a pulse source that applies a DC pulse voltage between the supporting electrode and the counter electrode. An amorphous carbon film is formed by supplying a mixed gas between the supporting electrode and the counter electrode such that the percentage of the acetylene gas relative to the carrier gas is 0.05% by volume or more and 10% by volume or less, and by generating plasma while a DC pulse voltage having a pulse width of 0.1 μsec or more and 5.0 μsec or less is applied to the counter electrode.

    摘要翻译: 无定形碳膜形成装置包括连接到地并支撑基板的支撑电极,配置成与支撑电极相对并具有混合气体注入孔的对电极,包含支撑电极的室和 对电极和具有在支持电极和对电极之间施加DC脉冲电压的脉冲源的DC脉冲发生器。 通过在支撑电极和对电极之间提供混合气体使得乙炔气体相对于载气的百分比为0.05体积%以上且10体积%以下,并且通过产生 等离子体,同时将具有0.1μsec以上且5.0μsec以下的脉冲宽度的DC脉冲电压施加到对电极。

    FILM DEPOSITION APPARATUS
    7.
    发明申请
    FILM DEPOSITION APPARATUS 审中-公开
    胶片沉积装置

    公开(公告)号:US20100199913A1

    公开(公告)日:2010-08-12

    申请号:US12715698

    申请日:2010-03-02

    IPC分类号: C23C16/00 C23C16/50

    摘要: There is provided film deposition units 54 each including two electrodes, each film deposition unit 54 being configured to generate a plasma between the two electrodes to cover substrates 90 with DLC films, a chamber 12 in which the plural film deposition units 54 are arranged, and a pulsed power supply 60 including electric circuits 62 that are arranged for the respective film deposition units 54, the electric circuits 62 applying a DC pulse voltage between a support electrode 51 and a counter electrode 52 of each of the film deposition units 54.

    摘要翻译: 提供了每个包括两个电极的膜沉积单元54,每个膜沉积单元54被配置为在两个电极之间产生等离子体以覆盖具有DLC膜的基板90,其中布置有多个膜沉积单元54的室12和 包括为各个成膜单元54布置的电路62的脉冲电源60,电路62在每个膜沉积单元54的支撑电极51和对电极52之间施加DC脉冲电压。

    Method of generating discharge plasma
    8.
    发明授权
    Method of generating discharge plasma 失效
    产生放电等离子体的方法

    公开(公告)号:US07750574B2

    公开(公告)日:2010-07-06

    申请号:US11653833

    申请日:2007-01-17

    IPC分类号: H05B31/26

    CPC分类号: H01J37/32146 H01J37/32091

    摘要: A pulse voltage is applied on a process gas to generate discharge plasma. The pulse voltage has a duty ratio controlled in a range of 0.001 percent or more and 8.0 percent or less. Preferably, the discharge plasma has an electron density of 1×1010 cm−3 or larger and an electron temperature of 1.5 eV or lower at a supplied power of 1.0 W/cm2 or more per a unit area of a discharge electrode.

    摘要翻译: 对工艺气体施加脉冲电压以产生放电等离子体。 脉冲电压的占空比控制在0.001%以上且8.0%以下的范围内。 优选地,放电等离子体的放电电极的单位面积的1.0W / cm 2以上的供给功率的电子密度为1×10 10 cm -3以上,电子温度为1.5eV以下。

    METHOD FOR FORMING AMORPHOUS CARBON FILM
    9.
    发明申请
    METHOD FOR FORMING AMORPHOUS CARBON FILM 失效
    形成不规则碳膜的方法

    公开(公告)号:US20090246407A1

    公开(公告)日:2009-10-01

    申请号:US12396621

    申请日:2009-03-03

    IPC分类号: B01J19/08

    摘要: An amorphous carbon film forming apparatus includes a supporting electrode that is connected to ground and supports a substrate, a counter electrode that is disposed so as to face the supporting electrode and has a mixed-gas injection orifice, a chamber containing the supporting electrode and the counter electrode, and a DC pulse generator having a pulse source that applies a DC pulse voltage between the supporting electrode and the counter electrode. An amorphous carbon film is formed by supplying a mixed gas between the supporting electrode and the counter electrode such that the percentage of the acetylene gas relative to the carrier gas is 0.05% by volume or more and 10% by volume or less, and by generating plasma while a DC pulse voltage having a pulse width of 0.1 μsec or more and 5.0 μsec or less is applied to the counter electrode.

    摘要翻译: 无定形碳膜形成装置包括连接到地并支撑基板的支撑电极,配置成与支撑电极相对并具有混合气体注入孔的对电极,包含支撑电极的室和 对电极和具有在支持电极和对电极之间施加DC脉冲电压的脉冲源的DC脉冲发生器。 通过在支撑电极和对电极之间提供混合气体使得乙炔气体相对于载气的百分比为0.05体积%以上且10体积%以下,并且通过产生 等离子体,同时将脉冲宽度为0.1个字节以上至5.0个音圈以下的直流脉冲电压施加到对置电极。

    High voltage pulse power circuit
    10.
    发明授权
    High voltage pulse power circuit 有权
    高压脉冲电源电路

    公开(公告)号:US07499293B2

    公开(公告)日:2009-03-03

    申请号:US11683552

    申请日:2007-03-08

    IPC分类号: H02M3/335 H02M7/515 H02H7/122

    摘要: A pulse power source comprises a first circuit, a second circuit, a transformer for coupling the first circuit and the second circuit, and a switching controller. The second circuit comprises a third semiconductor switch connected in series with a secondary winding of the transformer. The third semiconductor switch is connected in such a direction that a voltage generated in the second circuit is reverse-biased during a period in which the second semiconductor switch is turned on. A gate amplifier for forming a control signal from the switching controller into a pulse and outputting the pulse as a pulse signal is connected between a gate terminal and a cathode terminal of the third semiconductor switch.

    摘要翻译: 脉冲电源包括第一电路,第二电路,用于耦合第一电路和第二电路的变压器以及开关控制器。 第二电路包括与变压器的次级绕组串联连接的第三半导体开关。 第三半导体开关沿着使第二电路中产生的电压在第二半导体开关导通的时段内被反向偏置的方向连接。 用于将来自开关控制器的控制信号形成脉冲并输出脉冲作为脉冲信号的门放大器连接在第三半导体开关的栅极端子和阴极端子之间。