System for driving and controlling an open-area shield
    2.
    发明授权
    System for driving and controlling an open-area shield 失效
    用于驾驶和控制露天防护罩的系统

    公开(公告)号:US4983896A

    公开(公告)日:1991-01-08

    申请号:US239730

    申请日:1988-09-02

    摘要: A system for driving and controlling an open-area shield such as a window frame or door includes an open-area frame member having an opening; an open-area shielding member defining an open area together with the open-area frame member and made movable for shielding the open area; drive means for driving the open-area shielding member; closing drive instructing means for producing a closing drive instruction to drive the open-area shielding member in a direction to reduce the open area; a detection electrode disposed in at least one portion of the substantial peripheral edge of the open area; electrostatic capacity detecting means for detecting the electrostatic capacity of the detection electrode; obstruction setting means for setting the presence of an obstruction in the open area in accordance with the electrostatic capacity detected by the electrostatic capacity detecting means; and energization control means for energizing the drive means to close the same in response to the closing drive instruction of the closing drive instruciton means and for deenergizing the drive means when the obstruciton setting means sets the presence of an obstruction.

    摘要翻译: 用于驱动和控制诸如窗框或门的开放式屏蔽的系统包括具有开口的开口区域框架构件; 开口区域屏蔽构件,其与开放区域框架构件一起限定开放区域,并且可移动地用于屏蔽开放区域; 用于驱动开放区域屏蔽构件的驱动装置; 关闭驱动指示装置,用于产生在减小开放区域的方向上驱动开放区域屏蔽部件的关闭驱动指令; 检测电极,设置在所述开放区域的所述实质周边边缘的至少一部分中; 用于检测检测电极的静电电容的静电电容检测装置; 障碍物设定装置,用于根据由静电电容检测装置检测到的静电电容来设置开放区域中的障碍物的存在; 以及通电控制装置,用于响应于关闭驱动器指令装置的关闭驱动指令激励驱动装置关闭驱动装置,并且当阻碍设置装置设置障碍物的存在时,使驱动装置断电。

    Person detecting device
    3.
    发明授权
    Person detecting device 失效
    人检测装置

    公开(公告)号:US4887024A

    公开(公告)日:1989-12-12

    申请号:US263500

    申请日:1988-10-27

    摘要: A person detecting device detects the presence and absence of a person in a certain space such as a vehicle compartment. The device includes means for sensing the capacitance between a pair of electrodes with a space where a person may present, oscillating means for providing a first pulse signal and means for delaying the first pulse signal and providing a second pulse signal delayed in response to the capacitance. The device further includes means for receiving the first and second pulse signals and providing a third pulse signal of a duty ratio determined in response to the capacitance. The third pulse signal is further converted to a value representing the duty ratio which is compared with at least a reference value preset for judging as to the presence and absence of the person.

    摘要翻译: 人检测装置检测在诸如车厢的某个空间中的人的存在和不存在。 该装置包括用于感测一对电极之间的电容的装置,具有人可能存在的空间,用于提供第一脉冲信号的振荡装置和用于延迟第一脉冲信号的装置,以及提供响应于电容延迟的第二脉冲信号 。 该装置还包括用于接收第一和第二脉冲信号并提供响应于电容确定的占空比的第三脉冲信号的装置。 第三脉冲信号被进一步转换为表示占空比的值,该值与至少预设用于判断人的存在和不存在的参考值进行比较。

    Aluminum nitride sintered body and method for manufacturing the same
    4.
    发明授权
    Aluminum nitride sintered body and method for manufacturing the same 失效
    氮化铝烧结体及其制造方法

    公开(公告)号:US5767028A

    公开(公告)日:1998-06-16

    申请号:US687445

    申请日:1996-09-18

    摘要: The aluminum nitride sintered body according to the present invention comprises 1-10 % by weight of at least one element selected from a group consisting of a group IIIa element listed in periodic table, Ca, Sr and Ba in terms of the amount of an oxide thereof, 0.2-2.0 % by weight of boron carbide, at most 0.2 % by weight of at least one silicon compound selected from a group consisting of SiO.sub.2, Si.sub.3 N.sub.4, SiC, Si.sub.2 N.sub.2 O,.beta.-Sialon, .alpha.-Sialon and poly-type aluminum nitride (Al--Si--O--N) in terms of the amount of Si component, and the balance of aluminum nitride. According to the foregoing structure, there is available an AlN sintered body in which grain growth of the AlN sintered body is inhibited; the sintered body structure is fined; coupling of grain boundaries and crystal grains is intensified, thereby improving both strength and fracture toughness of the sintered body and increasing mechanical strength and fracture toughness without impairing heat radiation characteristics intrinsic to aluminum nitride.

    摘要翻译: PCT No.PCT / JP96 / 01808 Sec。 371日期1996年9月18日 102(e)1996年9月18日PCT PCT 1996年6月28日PCT公布。 出版物WO97 / 03031 日本1997年1月30日根据本发明的氮化铝烧结体包含1-10重量%的选自元素周期表中的IIIa族元素,Ca,Sr和Ba中的至少一种元素,以 其氧化物的量为0.2-2.0重量%的碳化硼,至多0.2重量%的至少一种选自SiO 2,Si 3 N 4,SiC,Si 2 N 2 O,β-赛隆,α-赛隆的硅化合物 和多晶型氮化铝(Al-Si-ON)的Si成分量,余量为氮化铝。 根据上述结构,可以获得AlN烧结体,其中AlN烧结体的晶粒生长被抑制; 烧结体结构被罚款; 晶界和晶粒的耦合增强,从而提高了烧结体的强度和断裂韧性,提高了机械强度和断裂韧性,而不损害氮化铝固有的热辐射特性。

    Aluminum nitride sintered body and method for manufacturing the same
    5.
    发明授权
    Aluminum nitride sintered body and method for manufacturing the same 失效
    氮化铝烧结体及其制造方法

    公开(公告)号:US5508240A

    公开(公告)日:1996-04-16

    申请号:US246763

    申请日:1994-05-20

    IPC分类号: C04B35/581

    CPC分类号: C04B35/581

    摘要: An aluminum nitride sintered body containing 1 to 10% by weight of an oxide of at least one element selected from a group consisting of a group IIIa element, Ca, Sr and Ba, the concentration of a Si component in the sintered body is 0.01 to 0.2% by weight and three-point bending strength is 490 MPa or more. The sintered body is characterized in that a crystal structure composed of aluminum nitride crystal grains is formed, the fracture toughness is 2.8 MN/m.sup.3/2 or more, the three-point bending strength is 490 MPa or more and the thermal conductivity is 150 W/m.multidot.k or more. In the crystal structure, the distribution of the crystal grain distribution is adequately adjusted. The growth of the AlN sintered body is restricted, thus the structure of the sintered body is fined, and the distribution of the crystal grain size is controlled adequately so that the strength and the fracture toughness of the sintered body are improved. Moreover, the mechanical Strength and fracture toughness are improved without impairing the heat radiating characteristics of the aluminum nitride.

    摘要翻译: 含有1〜10重量%的选自由IIIa族元素,Ca,Sr和Ba组成的组中的至少一种元素的氧化物的氮化铝烧结体,烧结体中Si成分的浓度为0.01〜 0.2重量%,三点弯曲强度为490MPa以上。 烧结体的特征在于,形成由氮化铝晶粒构成的晶体结构,断裂韧性为2.8MN / m 3/2以上,三点弯曲强度为490MPa以上,导热系数为150W / mxk以上。 在晶体结构中,适当调整晶粒分布的分布。 AlN烧结体的生长受到限制,因此烧结体的结构被精细化,并且适当地控制晶粒尺寸的分布,从而提高了烧结体的强度和断裂韧性。 此外,机械强度和断裂韧性得到改善,而不损害氮化铝的散热特性。

    INTER-VEHICLE DISTANCE CONTROL APPARATUS AND INTER-VEHICLE DISTANCE CONTROL METHOD
    6.
    发明申请
    INTER-VEHICLE DISTANCE CONTROL APPARATUS AND INTER-VEHICLE DISTANCE CONTROL METHOD 有权
    车辆间距控制装置和车间距离控制方法

    公开(公告)号:US20100198477A1

    公开(公告)日:2010-08-05

    申请号:US12667055

    申请日:2009-04-01

    申请人: Takao Shirai

    发明人: Takao Shirai

    IPC分类号: B60K31/00

    摘要: In an inter-vehicle distance control apparatus and an inter-vehicle distance control method, object detection information is obtained from a detection portion that detects a first preceding vehicle ahead of a vehicle, and an object ahead of the first preceding vehicle; a first possible target stop position is calculated taking into account the first preceding vehicle, and a second possible target stop position is calculated taking into account the object, based on the object detection information; and a target stop position for the vehicle is set to one of the first possible target stop position and the second possible target stop position, which is closer to the vehicle than the other of the first possible target stop position and the second possible target stop position is.

    摘要翻译: 在车辆间距离控制装置和车辆间距离控制方法中,从检测车辆前方的第一前方车辆的检测部和前一车辆前方的物体获得物体检测信息; 基于对象检测信息,考虑到第一前方车辆来计算第一可能目标停止位置,并且考虑对象来计算第二可能目标停止位置; 并且车辆的目标停止位置被设定为比第一可能目标停止位置和第二可能目标停止位置中的另一个更靠近车辆的第一可能目标停止位置和第二可能目标停止位置之一 是的

    Substrate for optical semiconductor
    7.
    发明申请
    Substrate for optical semiconductor 审中-公开
    光学半导体基板

    公开(公告)号:US20060269698A1

    公开(公告)日:2006-11-30

    申请号:US10547697

    申请日:2004-09-21

    IPC分类号: C09K19/00

    摘要: A substrate for optical semiconductors of the present invention comprises an insulating ceramic substrate, a metal layer provided on the insulating ceramic substrate, a solder layer provided on the metal layer and composed of Sn only or 50 wt % or more of Sn and the balance substantially of Au, and a protective layer provided on the solder layer and composed of Au or Ag having a thickness of 0.01 μm or more and 1 μm or less. The substrate for optical semiconductors as described above makes it possible to reduce stress placed on the optical semiconductor, to suppress development of crystal defects, and to prolong its life when joining the optical semiconductor easily developing crystal defects by slight stress or when in use thereafter.

    摘要翻译: 本发明的光半导体用基板包括绝缘陶瓷基板,设置在绝缘陶瓷基板上的金属层,设置在金属层上的仅由Sn或50重量%以上的Sn构成的焊锡层,其余部分基本上 以及设置在焊料层上并由厚度为0.01μm以上至1μm以下的Au或Ag构成的保护层。 如上所述的用于光半导体的衬底使得可以减小放置在光学半导体上的应力,以抑制晶体缺陷的发展,并且在连接光学半导体时容易地轻微地产生晶体缺陷或当其使用时延长其使用寿命。

    Inter-vehicle distance control apparatus and inter-vehicle distance control method
    8.
    发明授权
    Inter-vehicle distance control apparatus and inter-vehicle distance control method 有权
    车间距离控制装置和车间距离控制方法

    公开(公告)号:US08386146B2

    公开(公告)日:2013-02-26

    申请号:US12667055

    申请日:2009-04-01

    申请人: Takao Shirai

    发明人: Takao Shirai

    IPC分类号: B60W30/16

    摘要: In an inter-vehicle distance control apparatus and an inter-vehicle distance control method, object detection information is obtained from a detection portion that detects a first preceding vehicle ahead of a vehicle, and an object ahead of the first preceding vehicle; a first possible target stop position is calculated taking into account the first preceding vehicle, and a second possible target stop position is calculated taking into account the object, based on the object detection information; and a target stop position for the vehicle is set to one of the first possible target stop position and the second possible target stop position, which is closer to the vehicle than the other of the first possible target stop position and the second possible target stop position is.

    摘要翻译: 在车辆间距离控制装置和车辆间距离控制方法中,从检测车辆前方的第一前方车辆的检测部和前一车辆前方的物体获得物体检测信息; 基于对象检测信息,考虑到第一前方车辆来计算第一可能目标停止位置,并且考虑对象来计算第二可能目标停止位置; 并且车辆的目标停止位置被设定为比第一可能目标停止位置和第二可能目标停止位置中的另一个更靠近车辆的第一可能目标停止位置和第二可能目标停止位置之一 是的

    Aluminum nitride substrate and thin film substrate therewith, and manufacturing method thereof
    9.
    发明授权
    Aluminum nitride substrate and thin film substrate therewith, and manufacturing method thereof 有权
    氮化铝基板及其薄膜基板及其制造方法

    公开(公告)号:US06689498B2

    公开(公告)日:2004-02-10

    申请号:US10000953

    申请日:2001-12-04

    IPC分类号: B32B900

    摘要: An aluminum nitride substrate includes an aluminum nitride sintered body containing a rare earth oxide as a sintering additive component. In the aluminum nitride substrate, a surface thereof is machined so that arithmetic average roughness Ra is 0.5 &mgr;m or less; an aggregate size of the sintering additive component present on the machined surface is 20 &mgr;m or less; and a total aggregate area in a unit area of the machined surface is 5% or less. A metal thin film is deposited on such machined surface with good intimate contact properties, and furthermore deposition accuracy or the like is improved.

    摘要翻译: 氮化铝衬底包括含有稀土氧化物作为烧结添加剂组分的氮化铝烧结体。 在氮化铝基板中,对其表面进行加工,使得算术平均粗糙度Ra为0.5μm以下; 存在于加工表面上的烧结添加剂组分的聚集体尺寸为20μm或更小; 加工面的单位面积的总骨料面积为5%以下。 金属薄膜沉积在这样加工的表面上,具有良好的紧密接触性能,此外提高了沉积精度等。