Aluminum nitride substrate and thin film substrate therewith, and manufacturing method thereof
    8.
    发明授权
    Aluminum nitride substrate and thin film substrate therewith, and manufacturing method thereof 有权
    氮化铝基板及其薄膜基板及其制造方法

    公开(公告)号:US06689498B2

    公开(公告)日:2004-02-10

    申请号:US10000953

    申请日:2001-12-04

    IPC分类号: B32B900

    摘要: An aluminum nitride substrate includes an aluminum nitride sintered body containing a rare earth oxide as a sintering additive component. In the aluminum nitride substrate, a surface thereof is machined so that arithmetic average roughness Ra is 0.5 &mgr;m or less; an aggregate size of the sintering additive component present on the machined surface is 20 &mgr;m or less; and a total aggregate area in a unit area of the machined surface is 5% or less. A metal thin film is deposited on such machined surface with good intimate contact properties, and furthermore deposition accuracy or the like is improved.

    摘要翻译: 氮化铝衬底包括含有稀土氧化物作为烧结添加剂组分的氮化铝烧结体。 在氮化铝基板中,对其表面进行加工,使得算术平均粗糙度Ra为0.5μm以下; 存在于加工表面上的烧结添加剂组分的聚集体尺寸为20μm或更小; 加工面的单位面积的总骨料面积为5%以下。 金属薄膜沉积在这样加工的表面上,具有良好的紧密接触性能,此外提高了沉积精度等。