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    Low Threshold Voltage And Inversion Oxide Thickness Scaling For A High-K Metal Gate P-Type MOSFET
    1.
    发明申请
    Low Threshold Voltage And Inversion Oxide Thickness Scaling For A High-K Metal Gate P-Type MOSFET 审中-公开
    高K金属栅P型MOSFET的低阈值电压和反转氧化层厚度缩放

    公开(公告)号：US20130032886A1

    公开(公告)日：2013-02-07

    申请号：US13195316

    申请日：2011-08-01

    申请人： Takashi Ando ,  Changhwan Choi ,  Martin M. Frank ,  Unoh Kwon ,  Vijay Narayanan

    发明人： Takashi Ando ,  Changhwan Choi ,  Martin M. Frank ,  Unoh Kwon ,  Vijay Narayanan

    IPC分类号： H01L27/092 ,  H01L21/8238

    CPC分类号： H01L27/0922 ,  H01L21/823807 ,  H01L29/16 ,  H01L29/161 ,  H01L29/42364 ,  H01L29/4966 ,  H01L29/517

    摘要： A structure has a semiconductor substrate and an nFET and a pFET disposed upon the substrate. The pFET has a semiconductor SiGe channel region formed upon or within a surface of the semiconductor substrate and a gate dielectric having an oxide layer overlying the channel region and a high-k dielectric layer overlying the oxide layer. A gate electrode overlies the gate dielectric and has a lower metal layer abutting the high-k layer, a scavenging metal layer abutting the lower metal layer, and an upper metal layer abutting the scavenging metal layer. The metal layer scavenges oxygen from the substrate (nFET) and SiGe (pFET) interface with the oxide layer resulting in an effective reduction in Tinv and Vt of the pFET, while scaling Tiny and maintaining Vt for the nFET, resulting in the Vt of the pFET becoming closer to the Vt of a similarly constructed nFET with scaled Tinv values.

    摘要翻译： 结构具有半导体衬底以及设置在衬底上的nFET和pFET。 pFET具有形成在半导体衬底的表面上或其表面上的半导体SiGe沟道区，以及覆盖沟道区的氧化物层和覆盖氧化物层的高k电介质层的栅极电介质。 栅电极覆盖在栅极电介质上，并且具有邻接高k层的下金属层，邻接下金属层的清除金属层和与清除金属层邻接的上金属层。 金属层清除了衬底（nFET）中的氧和与氧化物层的SiGe（pFET）界面，导致pFET的Tinv和Vt有效降低，同时缩小Tiny并维持nFET的Vt，导致Vt pFET变得更接近具有缩放Tinv值的类似构造的nFET的Vt。

    Scaled equivalent oxide thickness for field effect transistor devices
    3.
    发明授权
    Scaled equivalent oxide thickness for field effect transistor devices 有权
    场效应晶体管器件的等效氧化物厚度变化

    公开(公告)号：US08343839B2

    公开(公告)日：2013-01-01

    申请号：US12788454

    申请日：2010-05-27

    申请人： Takashi Ando ,  Changhwan Choi ,  Unoh Kwon ,  Vijay Narayanan

    发明人： Takashi Ando ,  Changhwan Choi ,  Unoh Kwon ,  Vijay Narayanan

    IPC分类号： H01L21/8236

    CPC分类号： H01L21/823842 ,  H01L21/02164 ,  H01L21/02697 ,  H01L21/28229 ,  H01L21/823857 ,  H01L29/517 ,  H01L29/518

    摘要： A method for forming a field effect transistor device includes forming an oxide layer on a substrate, forming a dielectric layer on the oxide layer, forming a first TiN layer on the dielectric layer, forming a metallic layer on the first layer, forming a second TiN layer on the metallic layer, removing a portion of the first TiN layer, the metallic layer, and the second TiN layer to expose a portion of the dielectric layer, forming a layer of stoichiometric TiN on the exposed portion of the dielectric layer and the second TiN layer, heating the device, and forming a polysilicon layer on the device.

    摘要翻译： 一种形成场效应晶体管器件的方法包括在衬底上形成氧化物层，在氧化层上形成电介质层，在电介质层上形成第一TiN层，在第一层上形成金属层，形成第二TiN 去除一部分第一TiN层，金属层和第二TiN层以暴露介电层的一部分，在介电层的暴露部分上形成化学计量的TiN层，第二层 TiN层，加热器件，并在器件上形成多晶硅层。

    Scaled Equivalent Oxide Thickness for Field Effect Transistor Devices
    5.
    发明申请
    Scaled Equivalent Oxide Thickness for Field Effect Transistor Devices 有权
    场效应晶体管器件的等效氧化物厚度

    公开(公告)号：US20110291198A1

    公开(公告)日：2011-12-01

    申请号：US12788454

    申请日：2010-05-27

    申请人： Takashi Ando ,  Changhwan Choi ,  Unoh Kwon ,  Vijay Narayanan

    发明人： Takashi Ando ,  Changhwan Choi ,  Unoh Kwon ,  Vijay Narayanan

    IPC分类号： H01L27/088 ,  H01L21/8234

    CPC分类号： H01L21/823842 ,  H01L21/02164 ,  H01L21/02697 ,  H01L21/28229 ,  H01L21/823857 ,  H01L29/517 ,  H01L29/518

    摘要： A method for forming a field effect transistor device includes forming an oxide layer on a substrate, forming a dielectric layer on the oxide layer, forming a first TiN layer on the dielectric layer, forming a metallic layer on the first layer, forming a second TiN layer on the metallic layer, removing a portion of the first TiN layer, the metallic layer, and the second TiN layer to expose a portion of the dielectric layer, forming a layer of stoichiometric TiN on the exposed portion of the dielectric layer and the second TiN layer, heating the device, and forming a polysilicon layer on the device.

    摘要翻译： 一种形成场效应晶体管器件的方法包括在衬底上形成氧化物层，在氧化层上形成电介质层，在电介质层上形成第一TiN层，在第一层上形成金属层，形成第二TiN 去除一部分第一TiN层，金属层和第二TiN层以暴露介电层的一部分，在介电层的暴露部分上形成化学计量的TiN层，第二层 TiN层，加热器件，并在器件上形成多晶硅层。

    Scavenging metal stack for a high-k gate dielectric
    6.
    发明授权
    Scavenging metal stack for a high-k gate dielectric 有权
    用于高k栅极电介质的清除金属堆叠

    公开(公告)号：US07989902B2

    公开(公告)日：2011-08-02

    申请号：US12487248

    申请日：2009-06-18

    申请人： Takashi Ando ,  Changhwan Choi ,  Martin M. Frank ,  Vijay Narayanan

    发明人： Takashi Ando ,  Changhwan Choi ,  Martin M. Frank ,  Vijay Narayanan

    IPC分类号： H01L29/76 ,  H01L29/94 ,  H01L31/062 ,  H01L31/113 ,  H01L31/119

    CPC分类号： H01L21/28088 ,  H01L29/4966 ,  H01L29/517 ,  H01L29/518 ,  H01L29/665 ,  H01L29/6659 ,  H01L29/7833

    摘要： A stack of a high-k gate dielectric and a metal gate structure includes a lower metal layer, a scavenging metal layer, and an upper metal layer. The scavenging metal layer meets the following two criteria 1) a metal (M) for which the Gibbs free energy change of the reaction Si+2/y MxOy→2x/y M+SiO2 is positive 2) a metal that has a more negative Gibbs free energy per oxygen atom for formation of oxide than the material of the lower metal layer and the material of the upper metal layer. The scavenging metal layer meeting these criteria captures oxygen atoms as the oxygen atoms diffuse through the gate electrode toward the high-k gate dielectric. In addition, the scavenging metal layer remotely reduces the thickness of a silicon oxide interfacial layer underneath the high-k dielectric. As a result, the equivalent oxide thickness (EOT) of the total gate dielectric is reduced and the field effect transistor maintains a constant threshold voltage even after high temperature processes during CMOS integration.

    摘要翻译： 高k栅极电介质和金属栅极结构的堆叠包括下部金属层，清除金属层和上部金属层。 清除金属层满足以下两个标准：1）反应Si + 2 / y MxOy→2x / y M + SiO2的吉布斯自由能变化为正的金属（M）2）具有更负的金属 每个氧原子吉布斯自由能用于形成氧化物，而不是下金属层的材料和上金属层的材料。 符合这些标准的清除金属层随着氧原子通过栅电极向高k栅极电介质扩散而捕获氧原子。 此外，清除金属层远远地降低了高k电介质下面的氧化硅界面层的厚度。 结果，即使在CMOS积分期间的高温处理之后，总栅极电介质的等效氧化物厚度（EOT）减小，并且场效应晶体管保持恒定的阈值电压。

    SCAVANGING METAL STACK FOR A HIGH-K GATE DIELECTRIC
    7.
    发明申请
    SCAVANGING METAL STACK FOR A HIGH-K GATE DIELECTRIC 有权
    用于高K栅介质的SCAVANGING金属叠层

    公开(公告)号：US20100320547A1

    公开(公告)日：2010-12-23

    申请号：US12487248

    申请日：2009-06-18

    申请人： Takashi Ando ,  Changhwan Choi ,  Martin M. Frank ,  Vijay Narayanan

    发明人： Takashi Ando ,  Changhwan Choi ,  Martin M. Frank ,  Vijay Narayanan

    IPC分类号： H01L29/78 ,  H01L21/314 ,  H01L21/336

    CPC分类号： H01L21/28088 ,  H01L29/4966 ,  H01L29/517 ,  H01L29/518 ,  H01L29/665 ,  H01L29/6659 ,  H01L29/7833

    摘要： A stack of a high-k gate dielectric and a metal gate structure includes a lower metal layer, a scavenging metal layer, and an upper metal layer. The scavenging metal layer meets the following two criteria 1) a metal (M) for which the Gibbs free energy change of the reaction Si+2/y MxOy→2x/y M+SiO2 is positive 2) a metal that has a more negative Gibbs free energy per oxygen atom for formation of oxide than the material of the lower metal layer and the material of the upper metal layer. The scavenging metal layer meeting these criteria captures oxygen atoms as the oxygen atoms diffuse through the gate electrode toward the high-k gate dielectric. In addition, the scavenging metal layer remotely reduces the thickness of a silicon oxide interfacial layer underneath the high-k dielectric. As a result, the equivalent oxide thickness (EOT) of the total gate dielectric is reduced and the field effect transistor maintains a constant threshold voltage even after high temperature processes during CMOS integration.

    摘要翻译： 高k栅极电介质和金属栅极结构的堆叠包括下部金属层，清除金属层和上部金属层。 清除金属层满足以下两个标准：1）反应Si + 2 / y MxOy→2x / y M + SiO2的吉布斯自由能变化为正的金属（M）2）具有更负的金属 每个氧原子吉布斯自由能用于形成氧化物，而不是下金属层的材料和上金属层的材料。 符合这些标准的清除金属层随着氧原子通过栅电极向高k栅极电介质扩散而捕获氧原子。 此外，清除金属层远远地降低了高k电介质下面的氧化硅界面层的厚度。 结果，即使在CMOS积分期间的高温处理之后，总栅极电介质的等效氧化物厚度（EOT）减小，并且场效应晶体管保持恒定的阈值电压。

    Scavanging metal stack for a high-k gate dielectric
    8.
    发明授权
    Scavanging metal stack for a high-k gate dielectric 有权
    用于高k栅介质的扫描金属堆叠

    公开(公告)号：US08367496B2

    公开(公告)日：2013-02-05

    申请号：US13099790

    申请日：2011-05-03

    申请人： Takashi Ando ,  Changhwan Choi ,  Martin M. Frank ,  Vijay Narayanan

    发明人： Takashi Ando ,  Changhwan Choi ,  Martin M. Frank ,  Vijay Narayanan

    IPC分类号： H01L21/8238

    CPC分类号： H01L21/28088 ,  H01L29/4966 ,  H01L29/517 ,  H01L29/518 ,  H01L29/665 ,  H01L29/6659 ,  H01L29/7833

    摘要： A stack of a high-k gate dielectric and a metal gate structure includes a lower metal layer, a scavenging metal layer, and an upper metal layer. The scavenging metal layer meets the following two criteria 1) a metal (M) for which the Gibbs free energy change of the reaction Si+2/y MxOy→2x/y M+SiO2 is positive 2) a metal that has a more negative Gibbs free energy per oxygen atom for formation of oxide than the material of the lower metal layer and the material of the upper metal layer. The scavenging metal layer meeting these criteria captures oxygen atoms as the oxygen atoms diffuse through the gate electrode toward the high-k gate dielectric. In addition, the scavenging metal layer remotely reduces the thickness of a silicon oxide interfacial layer underneath the high-k dielectric. As a result, the equivalent oxide thickness (EOT) of the total gate dielectric is reduced and the field effect transistor maintains a constant threshold voltage even after high temperature processes during CMOS integration.

    摘要翻译： 高k栅极电介质和金属栅极结构的堆叠包括下部金属层，清除金属层和上部金属层。 清除金属层满足以下两个标准：1）反应Si + 2 / y MxOy→2x / y M + SiO2的吉布斯自由能变化为正的金属（M）2）具有更负的金属 每个氧原子吉布斯自由能用于形成氧化物，而不是下金属层的材料和上金属层的材料。 符合这些标准的清除金属层随着氧原子通过栅电极向高k栅极电介质扩散而捕获氧原子。 此外，清除金属层远远地降低了高k电介质下面的氧化硅界面层的厚度。 结果，即使在CMOS积分期间的高温处理之后，总栅极电介质的等效氧化物厚度（EOT）减小，并且场效应晶体管保持恒定的阈值电压。

    SCAVANGING METAL STACK FOR A HIGH-K GATE DIELECTRIC
    9.
    发明申请
    SCAVANGING METAL STACK FOR A HIGH-K GATE DIELECTRIC 有权
    用于高K栅介质的SCAVANGING金属叠层

    公开(公告)号：US20110207280A1

    公开(公告)日：2011-08-25

    申请号：US13099790

    申请日：2011-05-03

    申请人： Takashi Ando ,  Changhwan Choi ,  Martin M. Frank ,  Vijay Narayanan

    发明人： Takashi Ando ,  Changhwan Choi ,  Martin M. Frank ,  Vijay Narayanan

    IPC分类号： H01L21/336

    CPC分类号： H01L21/28088 ,  H01L29/4966 ,  H01L29/517 ,  H01L29/518 ,  H01L29/665 ,  H01L29/6659 ,  H01L29/7833

    摘要： A stack of a high-k gate dielectric and a metal gate structure includes a lower metal layer, a scavenging metal layer, and an upper metal layer. The scavenging metal layer meets the following two criteria 1) a metal (M) for which the Gibbs free energy change of the reaction Si+2/y MxOy→2x/y M+SiO2 is positive 2) a metal that has a more negative Gibbs free energy per oxygen atom for formation of oxide than the material of the lower metal layer and the material of the upper metal layer. The scavenging metal layer meeting these criteria captures oxygen atoms as the oxygen atoms diffuse through the gate electrode toward the high-k gate dielectric. In addition, the scavenging metal layer remotely reduces the thickness of a silicon oxide interfacial layer underneath the high-k dielectric. As a result, the equivalent oxide thickness (EOT) of the total gate dielectric is reduced and the field effect transistor maintains a constant threshold voltage even after high temperature processes during CMOS integration.

    摘要翻译： 高k栅极电介质和金属栅极结构的堆叠包括下部金属层，清除金属层和上部金属层。 清除金属层满足以下两个标准：1）反应Si + 2 / y MxOy→2x / y M + SiO2的吉布斯自由能变化为正的金属（M）2）具有更负的金属 每个氧原子吉布斯自由能用于形成氧化物，而不是下金属层的材料和上金属层的材料。 符合这些标准的清除金属层随着氧原子通过栅电极向高k栅极电介质扩散而捕获氧原子。 此外，清除金属层远远地降低了高k电介质下面的氧化硅界面层的厚度。 结果，即使在CMOS积分期间的高温处理之后，总栅极电介质的等效氧化物厚度（EOT）减小，并且场效应晶体管保持恒定的阈值电压。