摘要:
A stack of a high-k gate dielectric and a metal gate structure includes a lower metal layer, a scavenging metal layer, and an upper metal layer. The scavenging metal layer meets the following two criteria 1) a metal (M) for which the Gibbs free energy change of the reaction Si+2/y MxOy→2x/y M+SiO2 is positive 2) a metal that has a more negative Gibbs free energy per oxygen atom for formation of oxide than the material of the lower metal layer and the material of the upper metal layer. The scavenging metal layer meeting these criteria captures oxygen atoms as the oxygen atoms diffuse through the gate electrode toward the high-k gate dielectric. In addition, the scavenging metal layer remotely reduces the thickness of a silicon oxide interfacial layer underneath the high-k dielectric. As a result, the equivalent oxide thickness (EOT) of the total gate dielectric is reduced and the field effect transistor maintains a constant threshold voltage even after high temperature processes during CMOS integration.
摘要翻译:高k栅极电介质和金属栅极结构的堆叠包括下部金属层,清除金属层和上部金属层。 清除金属层满足以下两个标准:1)反应Si + 2 / y MxOy→2x / y M + SiO2的吉布斯自由能变化为正的金属(M)2)具有更负的金属 每个氧原子吉布斯自由能用于形成氧化物,而不是下金属层的材料和上金属层的材料。 符合这些标准的清除金属层随着氧原子通过栅电极向高k栅极电介质扩散而捕获氧原子。 此外,清除金属层远远地降低了高k电介质下面的氧化硅界面层的厚度。 结果,即使在CMOS积分期间的高温处理之后,总栅极电介质的等效氧化物厚度(EOT)减小,并且场效应晶体管保持恒定的阈值电压。
摘要:
A structure has a semiconductor substrate and an nFET and a pFET disposed upon the substrate. The pFET has a semiconductor SiGe channel region formed upon or within a surface of the semiconductor substrate and a gate dielectric having an oxide layer overlying the channel region and a high-k dielectric layer overlying the oxide layer. A gate electrode overlies the gate dielectric and has a lower metal layer abutting the high-k layer, a scavenging metal layer abutting the lower metal layer, and an upper metal layer abutting the scavenging metal layer. The metal layer scavenges oxygen from the substrate (nFET) and SiGe (pFET) interface with the oxide layer resulting in an effective reduction in Tinv and Vt of the pFET, while scaling Tiny and maintaining Vt for the nFET, resulting in the Vt of the pFET becoming closer to the Vt of a similarly constructed nFET with scaled Tinv values.
摘要:
A stack of a high-k gate dielectric and a metal gate structure includes a lower metal layer, a scavenging metal layer, and an upper metal layer. The scavenging metal layer meets the following two criteria 1) a metal (M) for which the Gibbs free energy change of the reaction Si+2/y MxOy→2x/y M+SiO2 is positive 2) a metal that has a more negative Gibbs free energy per oxygen atom for formation of oxide than the material of the lower metal layer and the material of the upper metal layer. The scavenging metal layer meeting these criteria captures oxygen atoms as the oxygen atoms diffuse through the gate electrode toward the high-k gate dielectric. In addition, the scavenging metal layer remotely reduces the thickness of a silicon oxide interfacial layer underneath the high-k dielectric. As a result, the equivalent oxide thickness (EOT) of the total gate dielectric is reduced and the field effect transistor maintains a constant threshold voltage even after high temperature processes during CMOS integration.
摘要翻译:高k栅极电介质和金属栅极结构的堆叠包括下部金属层,清除金属层和上部金属层。 清除金属层满足以下两个标准:1)反应Si + 2 / y MxOy→2x / y M + SiO2的吉布斯自由能变化为正的金属(M)2)具有更负的金属 每个氧原子吉布斯自由能用于形成氧化物,而不是下金属层的材料和上金属层的材料。 符合这些标准的清除金属层随着氧原子通过栅电极向高k栅极电介质扩散而捕获氧原子。 此外,清除金属层远远地降低了高k电介质下面的氧化硅界面层的厚度。 结果,即使在CMOS积分期间的高温处理之后,总栅极电介质的等效氧化物厚度(EOT)减小,并且场效应晶体管保持恒定的阈值电压。
摘要:
A stack of a high-k gate dielectric and a metal gate structure includes a lower metal layer, a scavenging metal layer, and an upper metal layer. The scavenging metal layer meets the following two criteria 1) a metal (M) for which the Gibbs free energy change of the reaction Si+2/y MxOy→2x/y M+SiO2 is positive 2) a metal that has a more negative Gibbs free energy per oxygen atom for formation of oxide than the material of the lower metal layer and the material of the upper metal layer. The scavenging metal layer meeting these criteria captures oxygen atoms as the oxygen atoms diffuse through the gate electrode toward the high-k gate dielectric. In addition, the scavenging metal layer remotely reduces the thickness of a silicon oxide interfacial layer underneath the high-k dielectric. As a result, the equivalent oxide thickness (EOT) of the total gate dielectric is reduced and the field effect transistor maintains a constant threshold voltage even after high temperature processes during CMOS integration.
摘要翻译:高k栅极电介质和金属栅极结构的堆叠包括下部金属层,清除金属层和上部金属层。 清除金属层满足以下两个标准:1)反应Si + 2 / y MxOy→2x / y M + SiO2的吉布斯自由能变化为正的金属(M)2)具有更负的金属 每个氧原子吉布斯自由能用于形成氧化物,而不是下金属层的材料和上金属层的材料。 符合这些标准的清除金属层随着氧原子通过栅电极向高k栅极电介质扩散而捕获氧原子。 此外,清除金属层远远地降低了高k电介质下面的氧化硅界面层的厚度。 结果,即使在CMOS积分期间的高温处理之后,总栅极电介质的等效氧化物厚度(EOT)减小,并且场效应晶体管保持恒定的阈值电压。
摘要:
A stack of a high-k gate dielectric and a metal gate structure includes a lower metal layer, a scavenging metal layer, and an upper metal layer. The scavenging metal layer meets the following two criteria 1) a metal (M) for which the Gibbs free energy change of the reaction Si+2/y MxOy→2x/y M+SiO2 is positive 2) a metal that has a more negative Gibbs free energy per oxygen atom for formation of oxide than the material of the lower metal layer and the material of the upper metal layer. The scavenging metal layer meeting these criteria captures oxygen atoms as the oxygen atoms diffuse through the gate electrode toward the high-k gate dielectric. In addition, the scavenging metal layer remotely reduces the thickness of a silicon oxide interfacial layer underneath the high-k dielectric. As a result, the equivalent oxide thickness (EOT) of the total gate dielectric is reduced and the field effect transistor maintains a constant threshold voltage even after high temperature processes during CMOS integration.
摘要翻译:高k栅极电介质和金属栅极结构的堆叠包括下部金属层,清除金属层和上部金属层。 清除金属层满足以下两个标准:1)反应Si + 2 / y MxOy→2x / y M + SiO2的吉布斯自由能变化为正的金属(M)2)具有更负的金属 每个氧原子吉布斯自由能用于形成氧化物,而不是下金属层的材料和上金属层的材料。 符合这些标准的清除金属层随着氧原子通过栅电极向高k栅极电介质扩散而捕获氧原子。 此外,清除金属层远远地降低了高k电介质下面的氧化硅界面层的厚度。 结果,即使在CMOS积分期间的高温处理之后,总栅极电介质的等效氧化物厚度(EOT)减小,并且场效应晶体管保持恒定的阈值电压。
摘要:
In one embodiment, the invention is a method and apparatus for fabricating a high-performance band-edge complementary metal-oxide-semiconductor device. One embodiment of a method for fabricating a complementary metal-oxide-semiconductor device includes fabricating an n-type metal-oxide-semiconductor device using a gate first process, and fabricating a p-type metal-oxide-semiconductor device using a gate last process.
摘要:
Equivalent oxide thickness (EOT) scaled high k/metal gate stacks are provided in which the capacitance bottleneck of the interfacial layer is substantially eliminated, with minimal compromise on the mobility of carriers in the channel of the device. In one embodiment, the aforementioned EOT scaled high k/metal gate stacks are achieved by increasing the dielectric constant of the interfacial layer to a value that is greater than the originally formed interfacial layer, i.e., the interfacial layer prior to diffusion of a high k material dopant element therein. In another embodiment, the aforementioned scaled high k/metal gate stacks are achieved by eliminating the interfacial layer from the structure. In yet another embodiment, the aforementioned high k/metal gate stacks are achieved by both increasing the dielectric constant of the interfacial layer and reducing/eliminating the interfacial layer.
摘要:
A method for forming a field effect transistor device includes forming an oxide layer on a substrate, forming a dielectric layer on the oxide layer, forming a first TiN layer on the dielectric layer, forming a metallic layer on the first layer, forming a second TiN layer on the metallic layer, removing a portion of the first TiN layer, the metallic layer, and the second TiN layer to expose a portion of the dielectric layer, forming a layer of stoichiometric TiN on the exposed portion of the dielectric layer and the second TiN layer, heating the device, and forming a polysilicon layer on the device.
摘要:
Equivalent oxide thickness (EOT) scaled high k/metal gate stacks are provided in which the capacitance bottleneck of the interfacial layer is substantially eliminated, with minimal compromise on the mobility of carriers in the channel of the device. In one embodiment, the aforementioned EOT scaled high k/metal gate stacks are achieved by increasing the dielectric constant of the interfacial layer to a value that is greater than the originally formed interfacial layer, i.e., the interfacial layer prior to diffusion of a high k material dopant element therein. In another embodiment, the aforementioned scaled high k/metal gate stacks are achieved by eliminating the interfacial layer from the structure. In yet another embodiment, the aforementioned high k/metal gate stacks are achieved by both increasing the dielectric constant of the interfacial layer and reducing/eliminating the interfacial layer.
摘要:
Equivalent oxide thickness (EOT) scaled high k/metal gate stacks are provided in which the capacitance bottleneck of the interfacial layer is substantially eliminated, with minimal compromise on the mobility of carriers in the channel of the device. In one embodiment, the aforementioned EOT scaled high k/metal gate stacks are achieved by increasing the dielectric constant of the interfacial layer to a value that is greater than the originally formed interfacial layer, i.e., the interfacial layer prior to diffusion of a high k material dopant element therein. In another embodiment, the aforementioned scaled high k/metal gate stacks are achieved by eliminating the interfacial layer from the structure. In yet another embodiment, the aforementioned high k/metal gate stacks are achieved by both increasing the dielectric constant of the interfacial layer and reducing/eliminating the interfacial layer.