公开(公告)号：US5811327A

公开(公告)日：1998-09-22

申请号：US407609

申请日：1995-03-21

申请人： Takashi Funai ,  Naoki Makita ,  Toru Takayama

发明人： Takashi Funai ,  Naoki Makita ,  Toru Takayama

IPC分类号： G02F1/136 ,  C30B13/22 ,  G02F1/1368 ,  H01L21/20 ,  H01L21/00 ,  H01L21/336

CPC分类号： C30B13/22 ,  H01L21/2022 ,  H01L21/2026

摘要： In a substrate having an insulating surface in which an amorphous semiconductor film is deposited on the insulating surface, a predetermined under-heating portion of the amorphous semiconductor film is partially heated with a heating source emitting heating rays. While heating, the under-heating portion is shifted by moving the heating source or the substrate. Accordingly, the amorphous semiconductor film is sequentially heat-treated and polycrystallized. As the under-heating portion shifts, the polycrystallization sequentially proceeds using the already polycrystallized portion by irradiation with the heating rays, which is adjacent to the under-heating portion, as seed crystal. Thus, the growth condition of crystal grains is uniformly controlled in the shifting direction of the under-heating portion.

摘要翻译： 在绝缘表面上沉积非晶半导体膜的衬底中，非晶半导体膜的预定的欠热部分用发出加热射线的加热源部分加热。 在加热的同时，通过移动加热源或基板来移动欠热部分。 因此，非晶半导体膜依次热处理和多晶化。 当加热不足部分移动时，通过用与下加热部分相邻的加热线照射作为晶种，使用已经多晶结构的部分依次进行多晶化。 因此，在欠热部分的移动方向上均匀地控制晶粒的生长条件。

公开(公告)号：US5970327A

公开(公告)日：1999-10-19

申请号：US975446

申请日：1997-11-21

申请人： Naoki Makita ,  Takashi Funai ,  Toru Takayama

发明人： Naoki Makita ,  Takashi Funai ,  Toru Takayama

IPC分类号： C23C16/24 ,  H01L21/02 ,  H01L21/20 ,  H01L21/335 ,  H01L21/336 ,  H01L27/12 ,  H01L29/78 ,  H01L29/786

CPC分类号： H01L21/2022 ,  H01L29/66757 ,  H01L21/2026

摘要： A semiconductor device comprising a substrate having thereon an amorphous silicon film fabricated by a reduced pressure chemical vapor deposition, characterized in that a thin film transistor is provided by using a crystalline silicon film obtained by effecting crystal growth in parallel with the surface of the substrate at the periphery of a region containing a selectively introduced metallic element, the region being obtained by selectively introducing a metallic element capable of accelerating the crystallization of the amorphous silicon film and heating the region thereafter.

摘要翻译： 一种半导体器件，包括其上具有通过减压化学气相沉积制造的非晶硅膜的衬底，其特征在于，通过使用通过与衬底的表面平行地实现晶体生长获得的晶体硅膜来提供薄膜晶体管， 包含选择性引入的金属元素的区域的周边，该区域通过选择性地引入能够加速非晶硅膜的结晶的金属元素并且之后加热该区域而获得。

公开(公告)号：US5744824A

公开(公告)日：1998-04-28

申请号：US863272

申请日：1997-05-27

申请人： Takamasa Kousai ,  Naoki Makita ,  Toru Takayama

发明人： Takamasa Kousai ,  Naoki Makita ,  Toru Takayama

IPC分类号： G02F1/1345 ,  G02F1/136 ,  G02F1/1368 ,  G09G3/18 ,  G09G3/36 ,  H01L21/336 ,  H01L21/8232 ,  H01L27/085 ,  H01L27/12 ,  H01L29/786 ,  H01L51/50 ,  H01L29/04 ,  H01L29/12 ,  H01L31/036

CPC分类号： H01L27/12 ,  H01L29/78621

摘要： A liquid crystal display device including: a display section including a liquid crystal layer; a pair of substrates interposing the liquid crystal layer; a plurality of pixel electrodes located in a matrix on one of the pair of substrates; a plurality of first thin film transistors respectively connected to the plurality of pixel electrodes; and a peripheral driving circuit located for driving the display section, the peripheral driving circuit being located on the substrate on which the first thin film transistors are located and having a second thin film transistor. Each of the first thin film transistors includes a first channel layer formed of a first crystalline silicon layer, and the second thin film transistor includes a second channel layer formed of a second crystalline silicon layer having a higher mobility than the mobility of the first crystalline silicon layer. The second crystalline silicon layer includes a catalytic element for promoting crystallization.

摘要翻译： 一种液晶显示装置，包括：显示部，包括液晶层; 插入液晶层的一对基板; 位于所述一对基板中的一个基板上的矩阵中的多个像素电极; 分别连接到所述多个像素电极的多个第一薄膜晶体管; 以及用于驱动显示部分的外围驱动电路，外围驱动电路位于其上位于第一薄膜晶体管的基板上并具有第二薄膜晶体管。 每个第一薄膜晶体管包括由第一晶体硅层形成的第一沟道层，并且第二薄膜晶体管包括由具有比第一晶体硅的迁移率高的迁移率的第二晶体硅层形成的第二沟道层 层。 第二晶体硅层包括促进结晶的催化元素。

公开(公告)号：US5851860A

公开(公告)日：1998-12-22

申请号：US458685

申请日：1995-06-02

申请人： Naoki Makita ,  Takashi Funai

发明人： Naoki Makita ,  Takashi Funai

IPC分类号： H01L21/77 ,  H01L21/84 ,  H01L27/12

CPC分类号： H01L27/1277

摘要： The semiconductor device of the invention includes: a substrate having an insulating surface; an active region formed on the insulating surface of the substrate, the active region being formed by a crystalline silicon film; and an insulating thin film formed on the active region. In the semiconductor device, the active region contains a catalyst element for promoting a crystallization of an amorphous silicon film by a heat treatment.

摘要翻译： 本发明的半导体器件包括：具有绝缘表面的衬底; 形成在所述基板的绝缘表面上的有源区，所述有源区由晶体硅膜形成; 以及形成在有源区上的绝缘薄膜。 在半导体器件中，有源区域包含用于通过热处理促进非晶硅膜的结晶的催化剂元件。

公开(公告)号：US5821562A

公开(公告)日：1998-10-13

申请号：US452693

申请日：1995-05-30

申请人： Naoki Makita ,  Takashi Funai ,  Yoshitaka Yamamoto ,  Yasuhiro Mitani ,  Katsumi Nomura ,  Tadayoshi Miyamoto ,  Takamasa Kosai

发明人： Naoki Makita ,  Takashi Funai ,  Yoshitaka Yamamoto ,  Yasuhiro Mitani ,  Katsumi Nomura ,  Tadayoshi Miyamoto ,  Takamasa Kosai

IPC分类号： H01L21/20 ,  H01L21/336 ,  H01L21/77 ,  H01L21/84 ,  H01L27/12 ,  H01L29/786 ,  H01L29/04 ,  H01L29/06 ,  H01L31/036

CPC分类号： H01L21/2022 ,  H01L27/1277 ,  H01L29/66757 ,  Y10S148/016

摘要： Into an amorphous silicon film, catalyst elements for accelerating the crystallization are introduced. After patterning the amorphous silicon films in which the catalyst elements have been introduced into an island pattern, a heat treatment for the crystallization is conducted. Thus, the introduced catalyst elements efficiently diffuse only inside the island-patterned amorphous silicon films. As a result, a high-quality crystalline silicon film, having the crystal growth direction aligned in one direction and having no grain boundaries, is obtained. Using the thus formed crystalline silicon film, semiconductor devices having a high performance and stable characteristics are fabricated efficiently over the entire substrate, irrespective of the size of the devices.

摘要翻译： 引入非晶硅膜，用于加速结晶的催化剂元素。 在将催化剂元素引入岛状图案的非晶硅膜图案化之后，进行结晶化的热处理。 因此，引入的催化剂元件仅在岛状图案化的非晶硅膜的内部有效地扩散。 结果，获得了晶体生长方向在一个方向上排列并且不具有晶界的高质量晶体硅膜。 使用如此形成的晶体硅膜，无论器件尺寸如何，都能在整个基板上有效地制造具有高性能和稳定特性的半导体器件。

公开(公告)号：US6162667A

公开(公告)日：2000-12-19

申请号：US408869

申请日：1995-03-23

申请人： Takashi Funai ,  Naoki Makita ,  Yoshitaka Yamamoto ,  Tadayoshi Miyamoto ,  Takamasa Kousai ,  Masashi Maekawa

发明人： Takashi Funai ,  Naoki Makita ,  Yoshitaka Yamamoto ,  Tadayoshi Miyamoto ,  Takamasa Kousai ,  Masashi Maekawa

IPC分类号： H01L21/336 ,  H01L21/77 ,  H01L21/84 ,  H01L27/12 ,  H01L21/00

CPC分类号： H01L27/12 ,  H01L27/1277 ,  H01L29/66757

摘要： In a fabrication of a semiconductor device, an amorphous semiconductor film is first formed on a substrate having an insulating surface. Then, a minute amount of catalyst elements for accelerating crystallization of the amorphous semiconductor film is supplied to at least a portion of a surface of the amorphous semiconductor film. A heat treatment is further conducted so that the supplied catalyst elements are diffused into the amorphous semiconductor film. Thus, the catalyst elements are introduced uniformly into the amorphous semiconductor film in a very minute amount or at a low concentration, resulting in polycrystallization of at least a portion of the amorphous semiconductor film. Utilizing the thus obtained crystalline semiconductor film on the substrate surface as an active region, a semiconductor device such as a TFT is fabricated. The introduction of the catalyst elements are conducted by various methods such as: a formation of a film containing a minute amount of the catalyst elements; application of a solution containing the catalyst elements in several spin coating cycles; diffusion of the catalyst elements through a buffer layer; dipping into a solution in which the catalyst elements are dissolved or dispersed; or formation of a plating layer containing the catalyst elements.

摘要翻译： 在半导体器件的制造中，首先在具有绝缘表面的衬底上形成非晶半导体膜。 然后，将少量用于加速非晶半导体膜的结晶的催化剂元素供给到非晶半导体膜的表面的至少一部分。 进一步进行热处理，使得所提供的催化剂元素扩散到非晶半导体膜中。 因此，催化剂元素以非常微量或低浓度均匀地引入到非晶半导体膜中，导致至少一部分非晶半导体膜的多晶化。 利用由此获得的晶体半导体膜作为有源区，在衬底表面上制造诸如TFT的半导体器件。 催化剂元素的引入通过各种方法进行，例如：形成含有微量催化剂元素的膜; 在几个旋涂周期中应用含有催化剂元素的溶液; 催化剂元件通过缓冲层的扩散; 浸入催化剂元素溶解或分散的溶液中; 或形成含有催化剂元素的镀层。

公开(公告)号：US5550070A

公开(公告)日：1996-08-27

申请号：US357653

申请日：1994-12-16

申请人： Takashi Funai ,  Naoki Makita ,  Yoshitaka Yamamoto ,  Tatsuo Morita

发明人： Takashi Funai ,  Naoki Makita ,  Yoshitaka Yamamoto ,  Tatsuo Morita

IPC分类号： H01L21/20 ,  H01L21/336 ,  H01L21/265

CPC分类号： H01L29/66757 ,  H01L21/2022 ,  Y10S148/016

摘要： A method for producing a semiconductor film, includes the steps of: (a) forming an amorphous semiconductor film on a substrate having a surface with an insulating property; (b) introducing a material for accelerating crystallization of the amorphous semiconductor film into at least a part of the amorphous semiconductor film; (c) crystallizing the amorphous semiconductor film by heating to obtain a crystalline semiconductor film from the amorphous semiconductor film; and (d) oxidizing a surface of the crystalline semiconductor film to form a semiconductor oxide film containing a part of the material for accelerating the crystallization on the surface of the crystalline semiconductor film.

摘要翻译： 一种制造半导体膜的方法，包括以下步骤：（a）在具有绝缘性的表面的基板上形成非晶半导体膜; （b）引入用于加速非晶半导体膜结晶化成非晶半导体膜的至少一部分的材料; （c）通过加热使非晶半导体膜结晶，从非晶半导体膜得到结晶半导体膜; 和（d）氧化结晶半导体膜的表面以形成含有用于在结晶半导体膜的表面上加速结晶的材料的一部分的半导体氧化膜。

公开(公告)号：US5696003A

公开(公告)日：1997-12-09

申请号：US357648

申请日：1994-12-16

申请人： Naoki Makita ,  Takashi Funai ,  Yoshitaka Yamamoto ,  Yasuhiro Mitani ,  Katsumi Nomura ,  Tadayoshi Miyamoto ,  Takamasa Kosai

发明人： Naoki Makita ,  Takashi Funai ,  Yoshitaka Yamamoto ,  Yasuhiro Mitani ,  Katsumi Nomura ,  Tadayoshi Miyamoto ,  Takamasa Kosai

IPC分类号： H01L21/20 ,  H01L21/336 ,  H01L21/77 ,  H01L21/84 ,  H01L27/12

CPC分类号： H01L21/2022 ,  H01L27/1277 ,  H01L29/66757 ,  Y10S148/016

摘要： Into an amorphous silicon film, catalyst elements for accelerating the crystallization are introduced. After patterning the amorphous silicon films in which the catalyst elements have been introduced into an island pattern, a heat treatment for the crystallization is conducted. Thus, the introduced catalyst elements efficiently diffuse only inside the island-patterned amorphous silicon films. As a result, a high-quality crystalline silicon film, having the crystal growth direction aligned in one direction and having no grain boundaries, is obtained. Using the thus formed crystalline silicon film, semiconductor devices having a high performance and stable characteristics are fabricated efficiently over the entire substrate, irrespective of the size of the devices.

摘要翻译： 引入非晶硅膜，用于加速结晶的催化剂元素。 在将催化剂元素引入岛状图案的非晶硅膜图案化之后，进行结晶化的热处理。 因此，引入的催化剂元件仅在岛状图案化的非晶硅膜的内部有效地扩散。 结果，获得了晶体生长方向在一个方向上排列并且不具有晶界的高质量晶体硅膜。 使用如此形成的晶体硅膜，无论器件尺寸如何，都能在整个基板上有效地制造具有高性能和稳定特性的半导体器件。

公开(公告)号：US08999823B2

公开(公告)日：2015-04-07

申请号：US13125865

申请日：2009-10-20

申请人： Naoki Makita ,  Hiroshi Nakatsuji

发明人： Naoki Makita ,  Hiroshi Nakatsuji

IPC分类号： H01L27/12 ,  H01L27/146 ,  G09G5/10 ,  G06F3/042 ,  H01L29/786

CPC分类号： H01L27/14665 ,  G06F3/042 ,  G09G5/10 ,  H01L27/12 ,  H01L27/1229 ,  H01L29/78633

摘要： A semiconductor device according to the present invention includes a thin-film transistor and a thin-film diode. The respective semiconductor layers and of the thin-film transistor and the thin-film diode are crystalline semiconductor layers that have been formed by crystallizing the same crystalline semiconductor film. Ridges have been formed on the surface of the semiconductor layer of the thin-film diode. And the semiconductor layer of the thin-film diode has a greater surface roughness than the semiconductor layer of the thin-film transistor.

摘要翻译： 根据本发明的半导体器件包括薄膜晶体管和薄膜二极管。 各半导体层以及薄膜晶体管和薄膜二极管是通过使相同的结晶半导体膜结晶而形成的结晶半导体层。 已经在薄膜二极管的半导体层的表面上形成了脊。 并且薄膜二极管的半导体层具有比薄膜晶体管的半导体层更大的表面粗糙度。

公开(公告)号：US08460954B2

公开(公告)日：2013-06-11

申请号：US13125776

申请日：2009-10-22

申请人： Masaki Yamanaka ,  Hiroshi Nakatsuji ,  Naoki Makita

发明人： Masaki Yamanaka ,  Hiroshi Nakatsuji ,  Naoki Makita

IPC分类号： H01L21/00 ,  H01L21/20 ,  H01L21/36 ,  H01L27/14 ,  H01L29/04 ,  H01L29/15 ,  H01L31/036

CPC分类号： H01L29/66757 ,  G02F1/1368 ,  G02F2001/13312 ,  H01L27/0629 ,  H01L27/12 ,  H01L27/1229 ,  H01L27/1233 ,  H01L27/14612 ,  H01L29/78633 ,  H01L29/861

摘要： A semiconductor device includes a thin film transistor and a thin film diode on a same substrate. A semiconductor layer (109) of the thin film transistor and a semiconductor layer (110) of the thin film diode are crystalline semiconductor layers formed by crystallizing the same non-crystalline semiconductor film. The thickness of the semiconductor layer (110) of the thin film diode is greater than the thickness of the semiconductor layer (109) of the thin film transistor, and the surface of the semiconductor layer (110) of the thin film diode is rougher than the surface of the semiconductor layer (109) of the thin film transistor.

摘要翻译： 半导体器件在同一衬底上包括薄膜晶体管和薄膜二极管。 薄膜晶体管的半导体层（109）和薄膜二极管的半导体层（110）是通过使相同的非晶半导体膜结晶而形成的结晶半导体层。 薄膜二极管的半导体层（110）的厚度大于薄膜晶体管的半导体层（109）的厚度，并且薄膜二极管的半导体层（110）的表面比 薄膜晶体管的半导体层（109）的表面。