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    Semiconductor film, semiconductor device, and method of manufacturing the same including adding metallic element to the amorphous semiconductor film and introducing oxygen after crystallization
    3.
    发明授权
    Semiconductor film, semiconductor device, and method of manufacturing the same including adding metallic element to the amorphous semiconductor film and introducing oxygen after crystallization 有权
    半导体膜，半导体器件及其制造方法，包括在非晶半导体膜中添加金属元素并在结晶后引入氧

    公开(公告)号：US07015079B2

    公开(公告)日：2006-03-21

    申请号：US10771404

    申请日：2004-02-05

    申请人： Hidekazu Miyairi ,  Aiko Shiga ,  Katsumi Nomura ,  Naoki Makita ,  Takuya Matsuo

    发明人： Hidekazu Miyairi ,  Aiko Shiga ,  Katsumi Nomura ,  Naoki Makita ,  Takuya Matsuo

    IPC分类号： H01L21/00 ,  H01L21/84 ,  H01L21/20 ,  H01L21/36

    CPC分类号： H01L27/12 ,  G02F1/1362 ,  H01L21/0237 ,  H01L21/02488 ,  H01L21/02532 ,  H01L21/02667 ,  H01L21/02672 ,  H01L21/02686 ,  H01L27/1277 ,  H01L29/66757 ,  H01L29/78621 ,  H01L29/78675

    摘要： By adding a novel improvement to the technique disclosed in JP 8-78329 A, a manufacturing method in which film characteristics of a semiconductor film having a crystalline structure are improved is provided. In addition, a TFT having superior TFT characteristics, such as field effect mobility, which uses the semiconductor film as an active layer, and a method of manufacturing the TFT, are also provided. A metallic element which promotes the crystallization of silicon is added to a semiconductor film having an amorphous structure and an oxygen concentration within the film of less than 5×1018/cm3. The semiconductor film having an amorphous structure is then heat-treated, forming a semiconductor film having a crystalline structure. Subsequently, an oxide film on the surface is removed. Oxygen is introduced to the semiconductor film having a crystalline structure, and processing is performed such that the concentration of oxygen within the film is from 5×1018/cm3 to 1×1021/cm3. After removing an oxide film on the surface of the semiconductor film, the semiconductor film surface is leveled by irradiating laser light under an inert gas atmosphere or in a vacuum.

    摘要翻译： 通过添加对JP 8-78329A中公开的技术的新颖改进，提供了具有改善晶体结构的半导体膜的膜特性的制造方法。 此外，还提供了具有优异TFT特性的TFT，例如使用半导体膜作为有源层的场效应迁移率，以及TFT的制造方法。 将促进硅结晶的金属元素添加到半导体膜中，半导体膜具有薄膜内的非晶结构和氧浓度小于5×10 18 / cm 3。 然后对具有非晶结构的半导体膜进行热处理，形成具有晶体结构的半导体膜。 随后，除去表面上的氧化物膜。 将氧气引入到具有晶体结构的半导体膜中，并且进行处理，使得膜内的氧浓度为5×10 18 / cm 3至1×10 6 > 21 3/3。 在去除半导体膜表面上的氧化物膜之后，通过在惰性气体气氛或真空中照射激光来平整半导体膜表面。

    Thin film transistor semiconductor device
    4.
    发明授权
    Thin film transistor semiconductor device 有权
    薄膜晶体管半导体器件

    公开(公告)号：US07141823B2

    公开(公告)日：2006-11-28

    申请号：US10254670

    申请日：2002-09-26

    申请人： Takashi Hamada ,  Hidekazu Miyairi ,  Takuya Matsuo ,  Naoki Makita ,  Katsumi Nomura

    发明人： Takashi Hamada ,  Hidekazu Miyairi ,  Takuya Matsuo ,  Naoki Makita ,  Katsumi Nomura

    IPC分类号： H01L31/072

    CPC分类号： H01L29/78696 ,  H01L27/12 ,  H01L29/42384 ,  H01L29/66757 ,  H01L29/78621 ,  H01L29/78627 ,  H01L29/78675 ,  H01L2029/7863

    摘要： In a TFT with a GOLD structure, there is provided a structure which is able to improve an operating characteristic and reliability and reduce an off current value in order to reduce power consumption of a semiconductor device. The surface of LDD region (4) overlapped with a portion (7a) of a gate electrode through a gate insulating film (6) interposed therebetween is extremely flattened. Thus, it is possible to obtain a TFT structure which is capable of reducing a parasitic capacitance in the LDD region of the TFT with the GOLD structure, reducing an off current value, improving reliability, and enabling high speed operation.

    摘要翻译： 在具有GOLD结构的TFT中，提供了能够提高工作特性和可靠性并降低截止电流值以降低半导体器件的功耗的结构。 通过栅绝缘膜（6）与栅电极的部分（7a）重叠的LDD区（4）的表面极其平坦化。 因此，可以获得能够降低具有GOLD结构的TFT的LDD区域中的寄生电容的TFT结构，从而降低截止电流值，提高可靠性并实现高速运行。

    Irregular semiconductor film, having ridges of convex portion
    5.
    发明授权
    Irregular semiconductor film, having ridges of convex portion 有权
    不规则的半导体膜，具有凸部的凸脊

    公开(公告)号：US06777713B2

    公开(公告)日：2004-08-17

    申请号：US10265634

    申请日：2002-10-08

    申请人： Hidekazu Miyairi ,  Aiko Shiga ,  Katsumi Nomura ,  Naoki Makita ,  Takuya Matsuo

    发明人： Hidekazu Miyairi ,  Aiko Shiga ,  Katsumi Nomura ,  Naoki Makita ,  Takuya Matsuo

    IPC分类号： H01L2900

    CPC分类号： H01L27/12 ,  G02F1/1362 ,  H01L21/0237 ,  H01L21/02488 ,  H01L21/02532 ,  H01L21/02667 ,  H01L21/02672 ,  H01L21/02686 ,  H01L27/1277 ,  H01L29/66757 ,  H01L29/78621 ,  H01L29/78675

    摘要： By adding a novel improvement to the technique disclosed in JP 8-78329 A, a manufacturing method in which film characteristics of a semiconductor film having a crystalline structure are improved is provided. In addition, a TFT having superior TFT characteristics, such as field effect mobility, which uses the semiconductor film as an active layer, and a method of manufacturing the TFT, are also provided. A metallic element which promotes the crystallization of silicon is added to a semiconductor film having an amorphous structure and an oxygen concentration within the film of less than 5×1018/cm3. The semiconductor film having an amorphous structure is then heat-treated, forming a semiconductor film having a crystalline structure. Subsequently, an oxide film on the surface is removed. Oxygen is introduced to the semiconductor film having a crystalline structure, and processing is performed such that the concentration of oxygen within the film is from 5×1018/cm3 to 1×1021/cm3. After removing an oxide film on the surface of the semiconductor film, the semiconductor film surface is leveled by irradiating laser light under an inert gas atmosphere or in a vacuum.

    摘要翻译： 通过添加对JP 8-78329A中公开的技术的新颖改进，提供了具有改善晶体结构的半导体膜的膜特性的制造方法。 此外，还提供了具有优异TFT特性的TFT，例如使用半导体膜作为有源层的场效应迁移率，以及TFT的制造方法。 将促进硅结晶的金属元素加入到膜内的非晶结构和氧浓度小于5×10 18 / cm 3的半导体膜中。 然后对具有非晶结构的半导体膜进行热处理，形成具有晶体结构的半导体膜。 随后，除去表面上的氧化物膜。 将氧气引入具有晶体结构的半导体膜，并且进行处理，使得膜内的氧浓度为5×10 18 / cm 3至1×10 21 / cm 3。 在去除半导体膜表面上的氧化物膜之后，通过在惰性气体气氛或真空中照射激光来平整半导体膜表面。

    Level wound coil, method of manufacturing same, and package for same
    7.
    发明授权
    Level wound coil, method of manufacturing same, and package for same 失效
    水平卷绕线圈，制造方法和相同的包装

    公开(公告)号：US07594621B2

    公开(公告)日：2009-09-29

    申请号：US11641961

    申请日：2006-12-20

    申请人： Kenichi Inui ,  Yusuke Takenaga ,  Tomo Kawano ,  Katsumi Nomura ,  Mamoru Houfuku ,  Ken Horiguchi

    发明人： Kenichi Inui ,  Yusuke Takenaga ,  Tomo Kawano ,  Katsumi Nomura ,  Mamoru Houfuku ,  Ken Horiguchi

    IPC分类号： B65H55/04

    CPC分类号： B21C47/143 ,  B21C47/045 ,  B21C47/146 ,  B65H54/2848 ,  B65H55/00 ,  B65H2701/33 ,  Y10T29/49362

    摘要： A level wound coil (LWC) having a plurality of coil layers each of which has a pipe wound in alignment winding and in traverse winding. The LWC has a shift section where the pipe is shifted from the m-th coil layer to the (m+1)-th coil layer on a bottom surface thereof when the LWC is disposed on a mount surface. The shift section has the k-th shift section on inner layer side and the (k+1)-th shift section on outer layer side, where a start point of the (k+1)-th shift section does not transit, relative to a start point of the k-th shift section, to a direction reverse to a winding direction of the pipe. A length of the shift section that does not transit to the reverse direction is controlled.

    摘要翻译： 一种具有多个线圈层的绕线线圈（LWC），每个线圈层具有卷绕在对准绕组中的管道和横向卷绕。 当LWC设置在安装表面上时，LWC具有移位部分，其中管道从第m个线圈层移动到第（m + 1）个线圈层。 移位部具有内层侧的第k个移位部和外侧的第（k + 1）个移位部，第（k + 1）个移位部的起点相对不相交 到第k个变速段的起始点到与管的卷绕方向相反的方向。 控制不转向反方向的换档部的长度。

    Copper alloy material and method of making same
    8.
    发明申请
    Copper alloy material and method of making same 审中-公开
    铜合金材料及其制造方法

    公开(公告)号：US20070051442A1

    公开(公告)日：2007-03-08

    申请号：US11510854

    申请日：2006-08-28

    申请人： Yoshiki Yamamoto ,  Hiroaki Takano ,  Koichi Kotoku ,  Chingping Tong ,  Katsumi Nomura

    发明人： Yoshiki Yamamoto ,  Hiroaki Takano ,  Koichi Kotoku ,  Chingping Tong ,  Katsumi Nomura

    IPC分类号： C22C9/02 ,  C22F1/08

    CPC分类号： C22C9/06 ,  C22C9/02 ,  C22C9/04 ,  C22F1/08

    摘要： A copper alloy material for electric parts having: 1.0 to 5.0 mass % of Ni; 0.2 to 1.0 mass % of Si; 0.05 to 2.0 mass % of Sn; 0.1 to 5.0 mass % of Zn; 0.01 to 0.3 mass % of P; 0.05 to 1.0 mass % of at least one of Fe and Co; and the balance consisting of Cu and an unavoidable impurity. The ratio, (Ni+Fe+Co)/(Si+P), between the total mass of Ni, Fe and Co and the total mass of Si and P is 4 or more and 10 or less.

    摘要翻译： 1.一种电气部件用铜合金材料，其具有：1.0〜5.0质量％的Ni; Si：0.2〜1.0质量％ 0.05〜2.0质量％的Sn; 0.1〜5.0质量％的Zn; 0.01〜0.3质量％的P; 0.05〜1.0质量％的Fe和Co中的至少一种; 余量由Cu和不可避免的杂质组成。 Ni，Fe和Co的总质量与Si和P的总质量之比（Ni + Fe + Co）/（Si + P）为4以上且10以下。