公开(公告)号：US6162667A

公开(公告)日：2000-12-19

申请号：US408869

申请日：1995-03-23

申请人： Takashi Funai ,  Naoki Makita ,  Yoshitaka Yamamoto ,  Tadayoshi Miyamoto ,  Takamasa Kousai ,  Masashi Maekawa

发明人： Takashi Funai ,  Naoki Makita ,  Yoshitaka Yamamoto ,  Tadayoshi Miyamoto ,  Takamasa Kousai ,  Masashi Maekawa

IPC分类号： H01L21/336 ,  H01L21/77 ,  H01L21/84 ,  H01L27/12 ,  H01L21/00

CPC分类号： H01L27/12 ,  H01L27/1277 ,  H01L29/66757

摘要： In a fabrication of a semiconductor device, an amorphous semiconductor film is first formed on a substrate having an insulating surface. Then, a minute amount of catalyst elements for accelerating crystallization of the amorphous semiconductor film is supplied to at least a portion of a surface of the amorphous semiconductor film. A heat treatment is further conducted so that the supplied catalyst elements are diffused into the amorphous semiconductor film. Thus, the catalyst elements are introduced uniformly into the amorphous semiconductor film in a very minute amount or at a low concentration, resulting in polycrystallization of at least a portion of the amorphous semiconductor film. Utilizing the thus obtained crystalline semiconductor film on the substrate surface as an active region, a semiconductor device such as a TFT is fabricated. The introduction of the catalyst elements are conducted by various methods such as: a formation of a film containing a minute amount of the catalyst elements; application of a solution containing the catalyst elements in several spin coating cycles; diffusion of the catalyst elements through a buffer layer; dipping into a solution in which the catalyst elements are dissolved or dispersed; or formation of a plating layer containing the catalyst elements.

摘要翻译： 在半导体器件的制造中，首先在具有绝缘表面的衬底上形成非晶半导体膜。 然后，将少量用于加速非晶半导体膜的结晶的催化剂元素供给到非晶半导体膜的表面的至少一部分。 进一步进行热处理，使得所提供的催化剂元素扩散到非晶半导体膜中。 因此，催化剂元素以非常微量或低浓度均匀地引入到非晶半导体膜中，导致至少一部分非晶半导体膜的多晶化。 利用由此获得的晶体半导体膜作为有源区，在衬底表面上制造诸如TFT的半导体器件。 催化剂元素的引入通过各种方法进行，例如：形成含有微量催化剂元素的膜; 在几个旋涂周期中应用含有催化剂元素的溶液; 催化剂元件通过缓冲层的扩散; 浸入催化剂元素溶解或分散的溶液中; 或形成含有催化剂元素的镀层。

公开(公告)号：US5814835A

公开(公告)日：1998-09-29

申请号：US558501

申请日：1995-11-16

申请人： Naoki Makita ,  Tadayoshi Miyamoto ,  Tsukasa Shibuya ,  Masashi Maekawa

发明人： Naoki Makita ,  Tadayoshi Miyamoto ,  Tsukasa Shibuya ,  Masashi Maekawa

IPC分类号： H01L27/146 ,  H01L21/02 ,  H01L21/20 ,  H01L21/336 ,  H01L21/77 ,  H01L21/84 ,  H01L27/12 ,  H01L29/786 ,  H01L29/04

CPC分类号： H01L29/78654 ,  H01L21/2022 ,  H01L27/1214 ,  H01L29/66757

摘要： The semiconductor device of invention includes: a substrate having an insulating surface; and an element region formed by crystallizing an amorphous silicon film, the element region being provided on the insulating surface of the substrate. In the semiconductor device, the element region is constituted by a laterally crystallized region formed by crystallizing the amorphous silicon film from a linearly crystallized region crystallized by a selective introduction of catalyst elements for promoting a crystallization of the amorphous silicon film to a region surrounding the linearly crystallized region by performing a heat-treatment, and a concentration of the catalyst elements in at least one of the laterally crystallized region and the linearly crystallized region is controlled by a line width of an introduction setting region having a linear planar pattern, the line width being set so as to selectively introduce the catalyst elements.

摘要翻译： 本发明的半导体器件包括：具有绝缘表面的衬底; 以及通过使非晶硅膜结晶而形成的元件区域，所述元件区域设置在所述基板的绝缘表面上。 在半导体器件中，元件区域由通过选择性引入催化剂元素结晶的线性结晶区域使非晶硅膜结晶而形成的横向结晶区域，用于促进非晶硅膜的结晶化到线性区域 通过进行热处理的结晶化区域，并且横向结晶化区域和直线结晶化区域中的至少一个中的催化剂元素的浓度由具有线性平面图案的引入设定区域的线宽度，线宽度 被设定为选择性地引入催化剂元素。

公开(公告)号：US5940693A

公开(公告)日：1999-08-17

申请号：US893285

申请日：1997-07-15

申请人： Masashi Maekawa

发明人： Masashi Maekawa

IPC分类号： H01L21/20 ,  H01L21/336 ,  H01L29/786 ,  H01L21/324

CPC分类号： H01L29/78618 ,  H01L21/2022 ,  H01L29/41733 ,  H01L29/66757

摘要： A method for annealing amorphous silicon film to produce polycrystalline film suitable for thin-film transistors fabricated on glass substrates is provided. The method involves using the selective location of nickel on a predetermined region of silicon to define the pattern of the lateral growth front as the silicon is crystallized. The method defines the resistivity of the silicide formed. The method also defines a specific range of nickel thicknesses to form the nickel silicide. A minimum thickness ensures that a continuous layer of nickel silicide exists on the growth front to promote an isotropic lateral growth front to form a crystalline film having high electron mobility. A maximum thickness limit reduces the risk of nickel silicide enclaves in the crystalline film to degrade the leakage current. Strategic placement of the nickel helps prevent nickel silicide contamination of the transistor channel regions, which degrade the leakage current. A TFT polycrystalline film is also provided made by the above mentioned process of using a defined thickness, silicide resisitivity, and placement of nickel on amorphous silicon to form a silicide which induces a controlled crystallization growth front.

摘要翻译： 提供了一种使非晶硅膜退火以制造适用于在玻璃基板上制造的薄膜晶体管的多晶膜的方法。 该方法包括在硅的预定区域上使用镍的选择性位置以在硅结晶时限定横向生长前沿的图案。 该方法定义了形成的硅化物的电阻率。 该方法还定义了镍厚度的特定范围以形成硅化镍。 最小厚度确保在生长前沿上存在连续的硅化镍层以促进各向同性横向生长前沿以形成具有高电子迁移率的结晶膜。 最大厚度限制降低了结晶膜中的硅化镍包层的风险，以降低漏电流。 镍的策略放置有助于防止晶体管沟道区域的硅化镍污染，这会降低漏电流。 还提供了通过使用规定的厚度，硅化物电阻率和在非晶硅上放置镍以形成引起受控结晶生长前沿的硅化物的上述方法制造的TFT多晶膜。

公开(公告)号：US5561089A

公开(公告)日：1996-10-01

申请号：US508490

申请日：1995-07-28

申请人： Futoshi Ishizaki ,  Naoyuki Goto ,  Masashi Maekawa

发明人： Futoshi Ishizaki ,  Naoyuki Goto ,  Masashi Maekawa

IPC分类号： C03C10/04 ,  C03C10/00 ,  G11B5/73 ,  G11B11/105 ,  C03C3/087 ,  C03C3/093

CPC分类号： G11B11/10582 ,  C03C10/0045 ,  G11B11/10584 ,  G11B11/10586 ,  G11B5/7315

摘要： Glass-ceramic for information recording disks have a crystalline structure suitably used for substrate materials and the like for magnetic disks and magneto-optic disks as well as have improved surface characteristics obtained by polishing the glass, and besides the base glass thereof is excellent in melting properties and moldability thereof. The base glass composition consists essentially of ingredients of SiO.sub.2 -Al.sub.2 O.sub.3 -ZnO-MgO-CaO-SrO-BaO-TiO.sub.2 system. The main crystalline phase of the glass-ceramic produced by heat-treating the base glass having a viscosity of log .eta.=3.0 poise or less at 1250.degree. C. is gahnite, a size of the crystal grain is within a range of from 50 to 1000 Angstrom, and a degree of surface roughness (Ra) of the polished glass-ceramic is within a range of from 0.5 to 9.0 Angstrom.

摘要翻译： 用于信息记录盘的玻璃陶瓷具有适用于磁盘和磁光盘的基板材料等的晶体结构，并且具有通过研磨玻璃而获得的改进的表面特性，此外，其基础玻璃的熔融性优异 性能和成型性。 基础玻璃组合物基本上由SiO 2 -Al 2 O 3 -ZnO-MgO-CaO-SrO-BaO-TiO 2体系的成分组成。 通过在1250℃下对log eta = 3.0泊或更小的粘度进行热处理制备的玻璃陶瓷的主结晶相是霰石，晶粒尺寸在50〜 抛光玻璃 - 陶瓷的表面粗糙度（Ra）在0.5〜9.0埃的范围内。

公开(公告)号：US6066547A

公开(公告)日：2000-05-23

申请号：US879386

申请日：1997-06-20

申请人： Masashi Maekawa

发明人： Masashi Maekawa

IPC分类号： G02F1/136 ,  G02F1/1368 ,  H01L21/20 ,  H01L21/336 ,  H01L29/45 ,  H01L29/78 ,  H01L29/786

CPC分类号： H01L29/66757 ,  H01L21/2022 ,  H01L29/458 ,  H01L29/78675

摘要： A method for annealing amorphous silicon film to produce polycrystalline film suitable for thin-film transistors fabricated on glass substrates is provided. The method involves using nickel to help induce the crystallization. The method also uses a high temperature, for a short period of time, to anneal the amorphous silicon. A one-step annealing process implants nickel ions, having a dosage of approximately 1.times.10.sup.15 ions/cm.sup.2, into the silicon before annealing. A two-step annealing process is also provided in which a thin nickel film is put in close proximity to the amorphous silicon film. A first, low temperature, anneal converts a portion of the films to nickel silicide. A second, high temperature, anneal uses the silicide to induce the amorphous film to crystallize. A TFT polycrystalline film made by the above mentioned process of using nickel and, either a one, or two-step high temperature annealing to induce crystallization is also provided.

摘要翻译： 提供了一种使非晶硅膜退火以制造适用于在玻璃基板上制造的薄膜晶体管的多晶膜的方法。 该方法包括使用镍来帮助诱导结晶。 该方法还使用高温度短时间来退火非晶硅。 一步退火工艺在退火之前将大约1×10 15个离子/ cm 2剂量的镍离子注入到硅中。 还提供了两步退火工艺，其中薄镍膜被放置在非晶硅膜附近。 首先，低温退火将一部分薄膜转化为硅化镍。 第二个高温退火使用硅化物来诱导非晶膜结晶。 还提供了通过上述使用镍的方法制成的TFT多晶膜，并且还提供了一步或两步高温退火以诱导结晶。

公开(公告)号：US5005797A

公开(公告)日：1991-04-09

申请号：US330085

申请日：1989-03-15

申请人： Masashi Maekawa ,  Kunio Kotani ,  Ryoji Ukaji ,  Hiroshi Shimizu ,  Kenichi Sato

发明人： Masashi Maekawa ,  Kunio Kotani ,  Ryoji Ukaji ,  Hiroshi Shimizu ,  Kenichi Sato

IPC分类号： B60R1/076

CPC分类号： B60R1/076 ,  Y10S248/90

摘要： The door mirror according to the present invention is a so-called tiltable door mirror for vehicles. The bearing member to bear the shaft of the mirror base which is to be fixed to the vehicle door is formed integrally with the synthetic resin-made mirror housing. The bearing member is formed as a bearing cylinder inside the mirror housing. Being in contact with the bearing surface of the bearing cylinder, the shaft pivotably supports the mirror housing. There is provided between the inner wall of the bearing cylinder and the shaft a U-shaped leaf spring which is in contact at the one end thereof with the inner wall of the bearing cylinder and at the other end with the flat surface formed at a part of the shaft, whereby the friction generated under the action of the leaf spring helps to block the mirror housing from pivoting and thus the mirror housing can be held in the normal position. The shaft has disposed at the end thereof a stopper to prevent the mirror housing from moving axially of the shaft. When a big external force is applied to the mirror housing, the portion of contact between the leaf spring and the shaft moves from the flat surface to the circumferential surface against the force of the leaf spring, so that the mirror housing is pivoted slowly from the normal position to a front or rear position with respect to the normal position. The door mirror of the present invention consists of a reduced number of elements and has a simplified structure. Furthermore, since it can be installed very easily, the manufacturing costs can be reduced very much.

公开(公告)号：US4801351A

公开(公告)日：1989-01-31

申请号：US943428

申请日：1986-12-19

申请人： Katunobu Awane ,  Masayoshi Koba ,  Toshiaki Miyajima ,  Masashi Maekawa

发明人： Katunobu Awane ,  Masayoshi Koba ,  Toshiaki Miyajima ,  Masashi Maekawa

IPC分类号： C30B29/66 ,  H01L21/20 ,  C30B1/08

CPC分类号： H01L21/2026 ,  Y10S117/902 ,  Y10S117/904

摘要： Improvements in a method for performing a monocrystallizing operation through the application of energy beams upon a non-monocrystalline thin-film of non-crystalline or polycrystalline material formed on a non-crystalline insulating film. The resulting superior monocrystalline thin-film has a crystal direction coinciding with that of the monocrystalline silicon base-plate and is formed on the insulating film even if the insulating film is as thick as 4 .mu.m. The thin-film is sufficiently covered between the active layers of a three-dimensional circuit element on the monocrystalline silicon base plate. '

摘要翻译： 通过在非晶体绝缘膜上形成非晶或多晶材料的非单晶薄膜上施加能量束来进行单晶化操作的方法的改进。 所得到的优异的单晶薄膜的晶体方向与单晶硅基板的晶体方向一致，即使绝缘膜厚度达到4μm，也形成在绝缘膜上。 薄膜充分覆盖在单晶硅基板上的三维电路元件的有源层之间。

公开(公告)号：US06225197B1

公开(公告)日：2001-05-01

申请号：US09465238

申请日：1999-12-15

申请人： Masashi Maekawa

发明人： Masashi Maekawa

IPC分类号： H01L2120

CPC分类号： H01L21/02672 ,  H01L21/02422 ,  H01L21/02532 ,  H01L21/02667 ,  H01L21/02686 ,  H01L21/2022 ,  H01L29/458 ,  H01L29/66757 ,  H01L29/78675

摘要： A method for annealing amorphous silicon film to produce polycrystalline film suitable for thin-film transistors fabricated on glass substrates is provided. The method involves using nickel to help induce the crystallization. The method also uses a high temperature, for a short period of time, to anneal the amorphous silicon. A one-step annealing process implants nickel ions, having a dosage of approximately 1×1015 ions/cm2, into the silicon before annealing. A two-step annealing process is also provided in which a thin nickel film is put in close proximity to the amorphous silicon film. A first, low temperature, anneal converts a portion of the films to nickel silicide. A second, high temperature, anneal uses the silicide to induce the amorphous film to crystallize. A TFT polycrystalline film made by the above mentioned process of using nickel and, either a one, or two-step high temperature annealing to induce crystallization is also provided.

摘要翻译： 提供了一种使非晶硅膜退火以制造适用于在玻璃基板上制造的薄膜晶体管的多晶膜的方法。 该方法包括使用镍来帮助诱导结晶。 该方法还使用高温度短时间来退火非晶硅。 一步退火工艺在退火之前将大约1×10 15个离子/ cm 2剂量的镍离子注入到硅中。 还提供了两步退火工艺，其中薄镍膜被放置在非晶硅膜附近。 首先，低温退火将一部分薄膜转化为硅化镍。 第二个高温退火使用硅化物来诱导非晶膜结晶。 还提供了通过上述使用镍的方法制成的TFT多晶膜，并且还提供了一步或两步高温退火以诱导结晶。

公开(公告)号：US5950078A

公开(公告)日：1999-09-07

申请号：US934347

申请日：1997-09-19

申请人： Masashi Maekawa ,  Jer-shen Maa

发明人： Masashi Maekawa ,  Jer-shen Maa

IPC分类号： H01L21/20 ,  H01L21/336 ,  H01L21/00 ,  H01L21/76

CPC分类号： H01L29/66757 ,  H01L21/2022

摘要： A method for rapid thermally annealing a thin amorphous film on a transparent substrate with the use of a radiation absorption film is provided. Unlike a transmissive silicon thin film, or transparent substrate, the metal absorptive film has excellent radiation absorption characteristics. When a radiation absorption layer is added to the substrate it is possible to rapidly anneal an amorphous silicon film with convention IC process radiation lamps. The metal absorption film also acts to conduct the heat to the amorphous silicon. The control provided by the choice of metal material, metal thickness, the oxidation of the metal surface, and the heat and duration of the RTA process provide unique opportunities to control the crystallization process. Polysilicon made by the above-described method has the potential of high electron mobility and low production costs. A thin-film structure for use in a TFT, made through the above-described method, is also provided.

摘要翻译： 提供了使用辐射吸收膜在透明基板上快速热退火薄非晶膜的方法。 与透射硅薄膜或透明基板不同，金属吸收膜具有优异的辐射吸收特性。 当向衬底添加辐射吸收层时，可以用常规IC工艺辐射灯快速退火非晶硅膜。 金属吸收膜还用于将热量传导到非晶硅。 通过金属材料的选择，金属厚度，金属表面的氧化以及RTA工艺的热和持续时间提供的控制提供了控制结晶过程的独特机会。 通过上述方法制造的多晶硅具有高电子迁移率和低生产成本的潜力。 还提供了通过上述方法制造的用于TFT的薄膜结构。

公开(公告)号：US5868953A

公开(公告)日：1999-02-09

申请号：US551126

申请日：1995-10-31

申请人： Masashi Maekawa ,  Nobuo Kawasaki ,  Yasuyuki Kawashima ,  Yoshio Karasawa

发明人： Masashi Maekawa ,  Nobuo Kawasaki ,  Yasuyuki Kawashima ,  Yoshio Karasawa

IPC分类号： B24B37/00 ,  C03C10/00 ,  C03C10/14 ,  C03C19/00 ,  C09K3/14 ,  G11B5/73 ,  G11B5/82 ,  G11B5/84 ,  B44C1/22

CPC分类号： G11B5/8404 ,  C03C10/0009 ,  C03C19/00 ,  C09K3/1409

摘要： A method for manufacturing a magnetic disk substrate includes a step of polishing a glass-ceramic having a crystal phase consisting of crystal grains having an average diameter of less than 3 .mu.m with a polishing material having a grain diameter smaller than the diameter of the crystal grain. In one aspect of the invention, the glass-ceramic includes lithium disilicate (Li.sub.2 O--2SiO.sub.2) and alpha-quartz (alpha-SiO.sub.2) as predominant crystal phases and grown crystal grains of the alpha-quartz each have a globular grain structure consisting of aggregated particles and have a diameter within a range of 0.3 .mu.m-3.0 .mu.m.

摘要翻译： 一种磁盘基板的制造方法，其特征在于，使用具有比晶体直径小的研磨材料研磨具有平均粒径小于3μm的结晶相的结晶相的玻璃陶瓷的工序 粮食。 在本发明的一个方面，玻璃陶瓷包括二硅酸锂（Li 2 O-2SiO 2）和α-石英（α-SiO 2）作为主要结晶相，并且α-石英的生长晶粒各自具有由聚集的 颗粒，直径在0.3μm-3.0μm的范围内。