摘要:
A white film for a reflecting structure for surface light sources, which contains voids inside it and has a light stabilizer-containing coating film formed on at least one surface of it, is aged little with time and its brightness lowers little even when used for a long time. The white film ensures good image quality of display screens for a long time, and it is favorable to reflecting sheets and reflectors in edge light-type and direct back light-type surface light sources for liquid crystal display screens.
摘要:
A white film for a reflecting structure for surface light sources, which contains voids inside it and has a light stabilizer-containing coating film formed on at least one surface of it, is aged little with time and its brightness lowers little even when used for a long time. The white film ensures good image quality of display screens for a long time, and it is favorable to reflecting sheets and reflectors in edge light-type and direct back light-type surface light sources for liquid crystal display screens.
摘要:
A white film for a reflecting structure for surface light sources, which contains voids inside it and has a light stabilizer-containing coating film formed on at least one surface of it, is aged little with time and its brightness lowers little even when used for a long time. The white film ensures good image quality of display screens for a long time, and it is favorable to reflecting sheets and reflectors in edge light-type and direct back light-type surface light sources for liquid crystal display screens.
摘要:
A first multilayer film is a multilayer film which contains a layer A on at least one surface of a base film, in which the layer A has (1) a polycaprolactone segment, (2) a polysiloxane segment and/or a polydimethyl siloxane segment, and (3) a urethane bond, and the layer A has a glass transition temperature of from −30 to 0° C. A second multilayer film contains a layer A on at least one surface of a base film, in which the layer A has a scratch recovery time of 3 seconds or less at a temperature of 10° C. A third multilayer film contains a layer B on at least one surface of a base film, in which the layer B has a polycaprolactone segment and a urethane bond, and the layer B has average elongation at break of 65% or more at 80° C. to 150° C.
摘要:
An antireflection member comprising an antireflection layer includes two adjacent layers with different refractive indices, the antireflection layer formed at least on a first surface of a support substrate, and one of the two adjacent layers with different refractive indices located farther from the support substrate is a first layer, and another of the two adjacent layers is a second layer, wherein the antireflection layer contains two or more kinds of particles of different constituent elements and one or more kinds of binders, and a ratio b/a is more than 1.10 and less than 1.45, where “a” denotes a length of the line segment A1A2 connecting two arbitrarily-selected points A1 and A2 located on an interface between said first layer and said second layer and apart from each other by a linear distance of 500 nm or more, and “b” denotes a length of a line formed by projecting the line segment A1A2 in a direction perpendicular to the first surface of the support substrate onto the interface between the first layer and the second layer.
摘要:
A first film made of SiGe is formed over a support substrate whose surface layer is made of Si. A gate electrode is formed over a partial area of the first film, and source and drain regions are formed in the surface layer of the support substrate on both sides of the gate electrode. The gate electrode and source and drain regions constitute a first field effect transistor. A first stressor internally containing compressive strain or tensile strain is formed over the first film on both sides of the gate electrode of the first field effect transistor. The first stressor forms strain in a channel region.
摘要:
The semiconductor device comprises a semiconductor layer 18 formed on an insulation layer 16, a gate electrode 22 formed on the semiconductor layer with a gate insulation film 20 formed therebetween, a source/drain region 24 formed on the semiconductor layer on both sides of the gate electrode, and a semiconductor region 14 buried in the insulation layer 16 in a region below the gate electrode. The surface scattering of the carriers and phonon scattering can be prevented while suppressing the short channel effect. Resultantly the semiconductor device can have high mobility and high speed.
摘要:
A field effect transistor having a gate, a source, and a drain formed from metallic materials is disclosed that is able to supply a high driving current. In the field effect transistor, a source region, a drain region and a gate electrode are formed from silicide or other metallic materials. The metallic materials are selected so that in an n-channel MISFET, the work function Wg of the gate electrode and the work function Wg of the source region satisfy the relation of Wg Ws.
摘要:
Provided is a laminated polyester film, in which a laminated layer comprising two types of polyester resins having different glass transition points from each other is formed on at least one side of a base polyester film wherein the two types of polyester resins are composed of a polyester resin (A) having a glass transition point of from 60° C. to 100° C., and a polyester resin (B) having a glass transition point of from 0° C. to 60° C. and the polyester resin (B) contains a specified component, and a dicarboxylic acid component having a sulfonic acid metal base is set as a specified ratio of the entire dicarboxylic acid components in the polyester resins (A) and (B), satisfies adhesiveness to various types of coating materials which has conventionally been incompatible and, further, satisfies anti-blocking properties, transparency, scratch resistance and the other properties.
摘要:
Provided is a process for efficiently producing N-glycyltyrosine of high purity represented by the following formula: a salt thereof, or a solvate thereof, which comprises adding dropwise to an aqueous suspension of tyrosine or a salt thereof 2 equivalents or more of a haloacetyl halide and an aqueous solution of an inorganic base simultaneously in the presence or absence of an organic solvent, and subjecting the resulting N-haloacetyltyrosine to a reaction with an ammonium ion. Also provided are N-glycyl-L-tyrosine dehydrate having the crystal structures showing specific diffraction patterns in X-ray powder diffraction and processes for producing the same which are characterized by comprising crystallizing the dihydrate from an ethanol-water mixed solvent or water.