利索-全球专利检索

  1. 登录
  2. 注册

搜索结果

20 条记录 (耗时 0.036 秒)

    Etching composition and etching process
    3.
    发明授权
    Etching composition and etching process 有权
    蚀刻成分和蚀刻工艺

    公开(公告)号：US08048331B2

    公开(公告)日：2011-11-01

    申请号：US12943639

    申请日：2010-11-10

    申请人： Masahide Matsubara ,  Taketo Maruyama

    发明人： Masahide Matsubara ,  Taketo Maruyama

    IPC分类号： B44C1/22 ,  C03C15/00 ,  C03C25/68 ,  C23F1/00 ,  C25F3/00

    CPC分类号： C09K13/00

    摘要： An etching composition which comprises at least one organic carboxylic acid compound selected from acetic acid, propionic acid, butyric acid, succinic acid, citric acid, lactic acid, malic acid, tartaric acid, malonic acid, maleic acid, glutaric acid, aconitic acid, 1,2,3-propanetricarboxylic acid and ammonium salts of these acids, a polysulfonic acid compound and water, and an etching process which comprises etching a conductive film comprising zinc oxide as the main component using the etching composition described above.

    摘要翻译： 含有选自乙酸，丙酸，丁酸，琥珀酸，柠檬酸，乳酸，苹果酸，酒石酸，丙二酸，马来酸，戊二酸，乌头酸等至少一种有机羧酸化合物的蚀刻组合物， 这些酸的1,2,3-丙三羧酸和铵盐，聚磺酸化合物和水，以及蚀刻方法，其包括使用上述蚀刻组合物蚀刻包含氧化锌作为主要成分的导电膜。

    ETCHING COMPOSITION AND ETCHING PROCESS
    4.
    发明申请
    ETCHING COMPOSITION AND ETCHING PROCESS 审中-公开
    蚀刻组合物和蚀刻过程

    公开(公告)号：US20070278185A1

    公开(公告)日：2007-12-06

    申请号：US11752966

    申请日：2007-05-24

    申请人： Masahide Matsubara ,  Taketo Maruyama

    发明人： Masahide Matsubara ,  Taketo Maruyama

    IPC分类号： C03C15/00 ,  C09K13/00

    CPC分类号： C09K13/00

    摘要： An etching composition which comprises at least one organic carboxylic acid compound selected from acetic acid, propionic acid, butyric acid, succinic acid, citric acid, lactic acid, malic acid, tartaric acid, malonic acid, maleic acid, glutaric acid, aconitic acid, 1,2,3-propanetricarboxylic acid and ammonium salts of these acids, a polysulfonic acid compound and water, and an etching process which comprises etching a conductive film comprising zinc oxide as the main component using the etching composition described above.

    摘要翻译： 含有选自乙酸，丙酸，丁酸，琥珀酸，柠檬酸，乳酸，苹果酸，酒石酸，丙二酸，马来酸，戊二酸，乌头酸等至少一种有机羧酸化合物的蚀刻组合物， 这些酸的1,2,3-丙三羧酸和铵盐，聚磺酸化合物和水，以及蚀刻方法，其包括使用上述蚀刻组合物蚀刻包含氧化锌作为主要成分的导电膜。

    Resist stripping composition and process for stripping resist
    5.
    发明授权
    Resist stripping composition and process for stripping resist 有权
    抗剥离组合物和剥离抗蚀剂的方法

    公开(公告)号：US06323169B1

    公开(公告)日：2001-11-27

    申请号：US09517592

    申请日：2000-03-03

    申请人： Kojiro Abe ,  Hideki Fukuda ,  Hisaki Abe ,  Taketo Maruyama

    发明人： Kojiro Abe ,  Hideki Fukuda ,  Hisaki Abe ,  Taketo Maruyama

    IPC分类号： C11D304

    CPC分类号： H01L21/02071 ,  C11D3/33 ,  C11D3/361 ,  C11D3/364 ,  C11D3/3947 ,  C11D3/3956 ,  C11D7/10 ,  C11D11/0047 ,  G03F7/423 ,  H01L21/31133

    摘要： An aqueous resist stripping composition contains (a) an oxidizing agent, (b) a chelating agent, (c) a water-soluble fluorine compound, and optionally (d) an organic solvent. Also provided is a process of stripping resist films and resist residues remaining after etching treatment utilizing the aqueous resist stripping composition. In the process, corrosion of semiconductor materials, circuit-forming materials, insulating films, etc. is minimized and the rinsing is sufficiently made with only water without needing organic solvent such as alcohol.

    摘要翻译： 含水抗蚀剂剥离组合物包含（a）氧化剂，（b）螯合剂，（c）水溶性氟化合物和任选的（d）有机溶剂。 还提供了剥离抗蚀剂膜并利用水性抗蚀剂剥离组合物蚀刻处理后残留的残留物的方法。 在此过程中，半导体材料，电路形成材料，绝缘膜等的腐蚀被最小化，仅用水充分地进行冲洗，而不需要诸如酒精的有机溶剂。

    Cleaning agent and cleaning process using the same
    6.
    发明授权
    Cleaning agent and cleaning process using the same 有权
    清洁剂和清洁工艺使用相同

    公开(公告)号：US06686322B1

    公开(公告)日：2004-02-03

    申请号：US09581118

    申请日：2000-08-28

    申请人： Masahiro Nohara ,  Ryou Hashimoto ,  Taimi Oketani ,  Hisaki Abe ,  Taketo Maruyama ,  Tetsuo Aoyama

    发明人： Masahiro Nohara ,  Ryou Hashimoto ,  Taimi Oketani ,  Hisaki Abe ,  Taketo Maruyama ,  Tetsuo Aoyama

    IPC分类号： C11D942

    CPC分类号： H01L21/02071 ,  C03C23/0075 ,  C11D3/3947 ,  C11D7/08 ,  C11D7/3245 ,  C11D7/36 ,  C11D11/0047 ,  C23G1/24 ,  G02F1/13439 ,  G03F7/423 ,  H01L21/0273 ,  H01L21/31116

    摘要： A cleaning agent which comprises 0.1 to 60% by weight of an oxidizing agent and 0.0001 to 5% by weight of a chelating agent. In the process for producing semiconductor integrated circuits, a pattern layer of a photoresist used as an etching mask and residues formed from the photoresist by dry etching can be easily removed with the cleaning agent. In the process for producing substrates for liquid crystal display panels, residues derived from a conductive thin film formed by dry etching can also be easily removed. In the cleaning processes using the cleaning agent, wiring materials or insulating materials in thin film circuit devices or other materials used for producing substrates of semiconductor integrated circuits and liquid crystal panels are not corroded.

    摘要翻译： 一种清洁剂，其包含0.1至60重量％的氧化剂和0.0001至5重量％的螯合剂。 在制造半导体集成电路的过程中，可以容易地用清洁剂去除用作蚀刻掩模的光致抗蚀剂的图案层和由干蚀刻形成的残留物。 在液晶显示面板用基板的制造方法中，也可以容易地除去由干蚀刻形成的导电薄膜得到的残留物。 在使用清洁剂的清洁方法中，薄膜电路器件中的配线材料或绝缘材料或用于制造半导体集成电路和液晶面板的基板的其它材料不被腐蚀。

    Photoresist removing composition
    7.
    发明授权
    Photoresist removing composition 有权
    光刻胶去除组合物

    公开(公告)号：US06440326B1

    公开(公告)日：2002-08-27

    申请号：US09524499

    申请日：2000-03-13

    申请人： Taketo Maruyama ,  Hisaki Abe ,  Tetsuya Karita ,  Tetsuo Aoyama

    发明人： Taketo Maruyama ,  Hisaki Abe ,  Tetsuya Karita ,  Tetsuo Aoyama

    IPC分类号： C09K1300

    CPC分类号： C23G1/061 ,  G03F7/425 ,  H01L21/31133

    摘要： A resist removing composition comprising a quaternary ammonium hydroxide, a water-soluble amine, an alkylpyrrolidone and a sugar or sugar alcohol. The photoresist removing composition can easily remove (i) a photoresist layer applied onto an inorganic substrate, (ii) a remaining photoresist layer after dry etching or (iii) a photoresist residue after ashing, at a low temperature in a short time, and also enables hyperfine processing of a wiring pattern material to manufacture a high precision circuit pattern without corroding the material.

    摘要翻译： 一种抗蚀剂去除组合物，其包含季铵氢氧化物，水溶性胺，烷基吡咯烷酮和糖或糖醇。 光致抗蚀剂去除组合物可以容易地除去（i）施加到无机基材上的光致抗蚀剂层，（ii）在干蚀刻之后残留的光致抗蚀剂层，或（iii）灰化后的光致抗蚀剂残留物，在短时间内在低温下，以及 使得布线图案材料的超精细加工能够制造高精度的电路图案而不会腐蚀材料。

    Cleaning liquid for semiconductor devices
    8.
    发明授权
    Cleaning liquid for semiconductor devices 有权
    半导体器件清洗液

    公开(公告)号：US5962385A

    公开(公告)日：1999-10-05

    申请号：US133627

    申请日：1998-08-13

    申请人： Taketo Maruyama ,  Ryuji Hasemi ,  Hidetoshi Ikeda ,  Tetsuo Aoyama

    发明人： Taketo Maruyama ,  Ryuji Hasemi ,  Hidetoshi Ikeda ,  Tetsuo Aoyama

    IPC分类号： G03F7/42 ,  H01L21/02 ,  H01L21/027 ,  H01L21/304 ,  H01L21/3213 ,  C09K13/00 ,  C11D7/50

    CPC分类号： H01L21/02071

    摘要： A cleaning liquid for semiconductor devices comprising 1.0 to 5% by weight of a fluorine compound of the formula R.sub.4 NF, wherein R is a hydrogen atom or a C.sub.1 -C.sub.4 alkyl group, 72 to 80% by weight of an organic solvent soluble in water, and the remaining amount being water. The cleaning liquid can rapidly and completely at a low temperature remove resist residues left remaining after dry etching and ashing in the wiring step in the production of semiconductor integrated circuits, and the cleaning liquid does not corrode wiring materials.

    摘要翻译： 一种半导体器件用清洗液，其含有1.0〜5重量％的式R4NF的氟化合物，其中R为氢原子或C1-C4烷基，72〜80重量％的可溶于水的有机溶剂， 余量为水。 在半导体集成电路的制造中，清洗液能够在低温下快速且完全地除去在干法蚀刻和布线步骤中残留残留的抗蚀剂残留物，并且清洗液体不会腐蚀布线材料。