公开(公告)号：US5962385A

公开(公告)日：1999-10-05

申请号：US133627

申请日：1998-08-13

申请人： Taketo Maruyama ,  Ryuji Hasemi ,  Hidetoshi Ikeda ,  Tetsuo Aoyama

发明人： Taketo Maruyama ,  Ryuji Hasemi ,  Hidetoshi Ikeda ,  Tetsuo Aoyama

IPC分类号： G03F7/42 ,  H01L21/02 ,  H01L21/027 ,  H01L21/304 ,  H01L21/3213 ,  C09K13/00 ,  C11D7/50

CPC分类号： H01L21/02071

摘要： A cleaning liquid for semiconductor devices comprising 1.0 to 5% by weight of a fluorine compound of the formula R.sub.4 NF, wherein R is a hydrogen atom or a C.sub.1 -C.sub.4 alkyl group, 72 to 80% by weight of an organic solvent soluble in water, and the remaining amount being water. The cleaning liquid can rapidly and completely at a low temperature remove resist residues left remaining after dry etching and ashing in the wiring step in the production of semiconductor integrated circuits, and the cleaning liquid does not corrode wiring materials.

摘要翻译： 一种半导体器件用清洗液，其含有1.0〜5重量％的式R4NF的氟化合物，其中R为氢原子或C1-C4烷基，72〜80重量％的可溶于水的有机溶剂， 余量为水。 在半导体集成电路的制造中，清洗液能够在低温下快速且完全地除去在干法蚀刻和布线步骤中残留残留的抗蚀剂残留物，并且清洗液体不会腐蚀布线材料。

公开(公告)号：US5972862A

公开(公告)日：1999-10-26

申请号：US901475

申请日：1997-07-28

申请人： Yoshimi Torii ,  Shunji Sasabe ,  Masayuki Kojima ,  Kazuhisa Usuami ,  Takafumi Tokunaga ,  Kazusato Hara ,  Yoshikazu Ohira ,  Tsuyoshi Matsui ,  Hideto Gotoh ,  Tetsuo Aoyama ,  Ryuji Hasemi ,  Hidetoshi Ikeda ,  Fukusaburo Ishihara ,  Ryuji Sotoaka

发明人： Yoshimi Torii ,  Shunji Sasabe ,  Masayuki Kojima ,  Kazuhisa Usuami ,  Takafumi Tokunaga ,  Kazusato Hara ,  Yoshikazu Ohira ,  Tsuyoshi Matsui ,  Hideto Gotoh ,  Tetsuo Aoyama ,  Ryuji Hasemi ,  Hidetoshi Ikeda ,  Fukusaburo Ishihara ,  Ryuji Sotoaka

IPC分类号： C11D7/60 ,  G03F7/42 ,  H01L21/02 ,  H01L21/302 ,  H01L21/304 ,  H01L21/3065 ,  H01L21/3213 ,  C11D1/62 ,  C11D3/44 ,  C11D7/08

CPC分类号： H01L21/02071 ,  G03F7/423 ,  G03F7/425 ,  H01L21/02063 ,  Y10S438/974

摘要： There is disclosed a cleaning liquid for producing a semiconductor device which comprises (A) fluorine-containing compound; (B) water-soluble or water-miscible organic solvent; and (C) inorganic acid and/or organic acid, optionally, further comprises (D) quaternary ammonium salt or (D') a specific organic carboxylic acid ammonium salt and/or an organic carboxylic acid amine salt; as well as a process for producing a semiconductor device by forming a resist pattern on a substrate equipped on the surface with an insulating film layer or a metallic electroconductive layer, forming a via hole or electric wiring by dry etching, removing the resist pattern by ashing treatment with oxygen plasma; and effecting an cleaning treatment with the above cleaning liquid. The above cleaning liquid and production process can readily remove the deposit polymer formed in the case of dry etching without impairing metallic film and insulating film.

摘要翻译： 公开了一种用于制造半导体器件的清洗液，其包含（A）含氟化合物; （B）水溶性或水混溶性有机溶剂; 和（C）无机酸和/或有机酸，任选地还包含（D）季铵盐或（D'）特定的有机羧酸铵盐和/或有机羧酸胺盐; 以及通过在表面上配置有绝缘膜层或金属导电层的基板上形成抗蚀剂图案来制造半导体器件的方法，通过干蚀刻形成通孔或电布线，通过灰化除去抗蚀剂图案 用氧等离子体处理; 并用上述清洗液进行清洗处理。 上述清洗液和制造方法可以容易地除去在干蚀刻的情况下形成的沉积聚合物，而不损害金属膜和绝缘膜。

公开(公告)号：US5911836A

公开(公告)日：1999-06-15

申请号：US781774

申请日：1997-01-09

申请人： Mayumi Hada ,  Ryuji Hasemi ,  Hidetoshi Ikeda ,  Tetsuo Aoyama

发明人： Mayumi Hada ,  Ryuji Hasemi ,  Hidetoshi Ikeda ,  Tetsuo Aoyama

IPC分类号： G03F7/42 ,  H01L21/02 ,  H01L21/306 ,  H01L21/3213 ,  B08B3/08 ,  H01L21/44

CPC分类号： H01L21/02071 ,  G03F7/423 ,  Y10S438/906

摘要： A method of producing a semiconductor device, which includes applying a conductive metal film on a semiconductor wafer, applying a photoresist on the conductive metal film, removing the photoresist with a removing agent containing a fluorine compound or at least one basic component selected from the group consisting of a quaternary ammonium hydroxide, an alkanolamine and a mixture of an alkanolamine and a reducing agent, and cleaning the resultant semiconductor device by rinsing with a rinse comprising water and at least one peroxide compound. The method of the present invention can provide a highly accurate wiring circuit without corrosion of the conductive metal film.

摘要翻译： 一种制造半导体器件的方法，其包括在半导体晶片上施加导电金属膜，在导电金属膜上施加光致抗蚀剂，用含有氟化合物的除去剂或至少一种选自下组的碱性成分除去光致抗蚀剂 由季铵氢氧化物，链烷醇胺和链烷醇胺和还原剂的混合物组成，并且通过用包含水和至少一种过氧化物的漂洗液进行漂洗来清洗所得的半导体器件。 本发明的方法可以提供高精度的布线电路，而不会导致金属膜的腐蚀。

公开(公告)号：US5567574A

公开(公告)日：1996-10-22

申请号：US569673

申请日：1995-12-08

申请人： Ryuji Hasemi ,  Keiichi Iwata ,  Mayumi Hada ,  Hidetoshi Ikeda

发明人： Ryuji Hasemi ,  Keiichi Iwata ,  Mayumi Hada ,  Hidetoshi Ikeda

IPC分类号： G03F7/42 ,  H01L21/02 ,  G03F7/30 ,  C11D3/43

CPC分类号： H01L21/02071 ,  G03F7/425 ,  Y10S438/906

摘要： A removing agent composition for a photoresist is disclosed which comprises 5 to 50% by weight of an alkanolamine, an alkoxyalkylamine or an alkoxyalkanolamine, 1 to 30% by weight of a glycol monoalkyl ether, 0.5 to 15% by weight of a sugar or a sugaralcohol, 0.01 to 10% by weight of a quaternary ammonium hydroxide, if necessary, and water as the balance; and a method of removing by the use of this composition is also disclosed herein.According to the present invention, there can be provided the removing agent composition for the photoresist which can easily remove, at a low temperature in a short time, a photoresist film applied onto an inorganic substrate in a manufacturing process of semiconductor integrated patterns, a remaining photoresist layer after dry etching or a remaining photoresist residue after ashing and which does not corrode a wiring material at all and which can be rinsed with water alone.

摘要翻译： 公开了一种用于光致抗蚀剂的去除剂组合物，其包含5至50重量％的烷醇胺，烷氧基烷基胺或烷氧基烷醇胺，1至30重量％的二醇单烷基醚，0.5至15重量％的糖或 糖醇，0.01〜10重量％的季铵氢氧化物，如果需要，以水为平衡; 并且本文还公开了通过使用该组合物除去的方法。 根据本发明，可以提供一种用于光致抗蚀剂的去除剂组合物，其能够在半导体集成图案的制造过程中在短时间内容易地除去施加到无机基板上的光致抗蚀剂膜，剩余的 干蚀刻后的光致抗蚀剂层或灰化后残留的光致抗蚀剂残留物，并且根本不腐蚀布线材料，并且可以仅用水冲洗。

公开(公告)号：US20090030210A1

公开(公告)日：2009-01-29

申请号：US12234016

申请日：2008-09-19

申请人： Yasushi Higuchi ,  Akinori Tanaka ,  Ryuji Hasemi ,  Masaki Sugita

发明人： Yasushi Higuchi ,  Akinori Tanaka ,  Ryuji Hasemi ,  Masaki Sugita

IPC分类号： C07D277/06

CPC分类号： C12P13/12 ,  C07B2200/07 ,  C07C319/02 ,  C07D277/06 ,  C07D277/60 ,  C07C323/58

摘要： There is provided a process for producing an optically active 2-alkylcysteine or a salt thereof, characterized by allowing cells of microorganism or treated products thereof having an activity of stereoselective hydrolysis of the amide bond of a 2-alkyl-L-cysteinamide or a salt thereof to act on a 2-alkylcysteinamide consisting of a mixture of D- and L-isomers or a salt thereof; and allowing the obtained 2-alkyl-L-cysteine and 2-alkyl-D-cysteinamide to react with an aldehyde or a ketone, or an acetal or ketal thereof, so as to derive therefrom a 4-alkylthiazolidine-4-carboxylic acid or a salt thereof and a 4-alkylthiazolidine-4-carboxamide or a salt thereof, thereby efficiently separating and obtaining a 2-alkyl-L-cysteine or a salt thereof, or a 2-alkyl-D-cysteine or a salt thereof. There is also provided a process for producing a 4-alkylthiazolidine-4-carboxylic acid or a salt thereof from the 2-alkylcysteine or a salt thereof.

摘要翻译： 提供了一种制备光学活性2-烷基半胱氨酸或其盐的方法，其特征在于使微生物或其处理产物的细胞具有立体选择性水解2-烷基-L-半胱氨酰胺或盐的酰胺键的活性 作用于由D-和L-异构体的混合物或其盐组成的2-烷基半胱胺酰胺; 并使得到的2-烷基-L-半胱氨酸和2-烷基-D-半胱胺酰胺与醛或酮或其缩醛或缩酮反应，从而得到4-烷基噻唑烷-4-羧酸或 其盐和4-烷基噻唑烷-4-甲酰胺或其盐，从而有效分离并获得2-烷基-L-半胱氨酸或其盐或2-烷基-D-半胱氨酸或其盐。 还提供了由2-烷基半胱氨酸或其盐制备4-烷基噻唑烷-4-羧酸或其盐的方法。

公开(公告)号：US07208631B2

公开(公告)日：2007-04-24

申请号：US10552634

申请日：2004-04-07

申请人： Yasushi Higuchi ,  Akinori Tanaka ,  Ryuji Hasemi

发明人： Yasushi Higuchi ,  Akinori Tanaka ,  Ryuji Hasemi

IPC分类号： C07C233/05 ,  C07C231/10

CPC分类号： C07C323/60 ,  C07B2200/07 ,  C07C319/02 ,  C07C319/06 ,  C12P13/12 ,  C12P41/006 ,  Y10S435/863 ,  Y10S435/91

摘要： A process for producing a 2-alkylcysteinamide, which comprises hydrolysis of a 4-alkylthiazolidine-4-carboxamide represented by the general formula (2) or a salt thereof: wherein R represents a lower alkyl group having 1–4 carbon atoms; and each of R1 and R2 independently represents hydrogen or a lower alkyl group having 1–4 carbon atoms, or R1 and R2 are linked together to form an alicyclic, structure having 4–7 carbon atoms, excluding the case where both R1 and R2 are hydrogen, to give a 2-alkylcysteinamide represented by the general formula (1) or a salt thereof wherein R represents a lower alkyl group having 1–4 carbon atoms. Cells of a microorganism or treated products thereof having activity of stereoselective hydrolysis of a 2-alkyl-L-cysteinamide are allowed to act on the compound represented by the general formula (1) to yield a 2-alkyl-L-cysteine.

摘要翻译： 一种制备2-烷基半胱氨酰胺的方法，其包括由通式（2）表示的4-烷基噻唑烷-4-甲酰胺或其盐的水解：其中R表示具有1-4个碳原子的低级烷基; 并且R 1和R 2各自独立地表示氢或具有1-4个碳原子的低级烷基，或R 1和R 2独立地表示氢， SUB 2连接在一起形成具有4-7个碳原子的脂环族结构，不包括R 1和R 2都是氢的情况， 得到由通式（1）表示的2-烷基半胱胺酰胺或其盐，其中R表示具有1-4个碳原子的低级烷基。 允许具有2-烷基-L-半胱胺酰胺立体选择性水解活性的微生物或其处理产物的细胞作用于由通式（1）表示的化合物，得到2-烷基-L-半胱氨酸。

公开(公告)号：US06447576B1

公开(公告)日：2002-09-10

申请号：US09671139

申请日：2000-09-28

申请人： Kenji Otsuka ,  Yutaka Amijima ,  Ryuji Hasemi ,  Youji Nawa

发明人： Kenji Otsuka ,  Yutaka Amijima ,  Ryuji Hasemi ,  Youji Nawa

IPC分类号： B01D5302

CPC分类号： B01J20/28057 ,  B01D53/02 ,  B01D53/46 ,  B01D2257/706 ,  B01J20/0237 ,  B01J20/06 ,  C23C16/4412

摘要： A cleaning agent and a cleaning process for cleaning a harmful gas containing, as a harmful component, an organometallic compound represented by the general formula: Rm—M—Hn wherein R is alkyl; M is As, P, S, Se or Te; and m and n are each positive integer satisfying the relation: m+n=valence of M are described. The cleaning agent contains, as an effective component, copper (II) oxide or a mixture of copper (II) oxide and manganese dioxide. The copper (II) oxide has a BET specific surface area of 10 m2/g or greater which is extremely larger than that of copper (II) oxide conventionally used as the effective component of known cleaning agents. With such an extremely large BET specific surface area, the cleaning agent strongly and stably adsorbs the harmful organometallic compound, thereby efficiently cleaning the harmful gas without causing desorption of the adsorbed organometallic compound.

摘要翻译： 一种清洁剂和清洁方法，用于清洗含有由以下通式表示的有机金属化合物作为有害成分的有害气体：其中R是烷基; M为As，P，S，Se或Te; m和n分别为满足关系式的正整数：m + n = M的化合价。 清洁剂含有氧化铜（II）或氧化铜（II）和二氧化锰的混合物作为有效成分。 氧化铜（II）具有10m 2 / g以上的BET比表面积，其比通常用作已知清洁剂的有效成分的铜（II）氧化物的BET比表面积大得多。 通过这样一个非常大的BET比表面积，清洗剂强烈稳定地吸附有害的有机金属化合物，从而有效地清洗有害气体而不引起吸附的有机金属化合物的解吸附。

公开(公告)号：US08835595B2

公开(公告)日：2014-09-16

申请号：US13519205

申请日：2010-12-24

申请人： Takafumi Oda ,  Ryoji Otaki ,  Shota Arakawa ,  Tsuneaki Masuda ,  Hiroyuki Matsushita ,  Ryuji Hasemi

发明人： Takafumi Oda ,  Ryoji Otaki ,  Shota Arakawa ,  Tsuneaki Masuda ,  Hiroyuki Matsushita ,  Ryuji Hasemi

IPC分类号： C08G77/06 ,  C08L77/06

CPC分类号： C08G69/36 ,  C08L77/06

摘要： A polyamide compound containing: from 25 to 50 mol % of a diamine unit, which contains an aromatic diamine unit represented by the following formula (I), in an amount of 50 mol % or more; from 25 to 50 mol % of a dicarboxylic acid unit, which contains a linear aliphatic dicarboxylic acid unit represented by the following formula (II-1) and/or an aromatic dicarboxylic acid unit represented by the following formula (II-2), in an amount in total of 50 mol % or more; and from 0.1 to 50 mol % of a constitutional unit represented by the following formula (III): wherein n represents an integer of from 2 to 18, Ar represents an arylene group, and R represents a substituted or unsubstituted alkyl group or a substituted or unsubstituted aryl group.

摘要翻译： 一种聚酰胺化合物，其含有25〜50摩尔％的含有下述通式（I）所示的芳香族二胺单元的二胺单元，其含量为50摩尔％以上; 25〜50摩尔％的含有由下式（II-1）表示的直链脂肪族二羧酸单元和/或下式（II-2）表示的芳香族二羧酸单元的二羧酸单元，在 总量为50摩尔％以上; 和0.1〜50摩尔％的由下式（III）表示的结构单元：其中n表示2至18的整数，Ar表示亚芳基，R表示取代或未取代的烷基或取代或未取代的烷基， 未取代的芳基。

公开(公告)号：US06325841B1

公开(公告)日：2001-12-04

申请号：US09530951

申请日：2000-05-16

申请人： Kenji Otsuka ,  Satoshi Arakawa ,  Ryuji Hasemi ,  Yutaka Amijima ,  Norihiro Suzuki

发明人： Kenji Otsuka ,  Satoshi Arakawa ,  Ryuji Hasemi ,  Yutaka Amijima ,  Norihiro Suzuki

IPC分类号： B01D5304

CPC分类号： B01D53/685 ,  B01J20/04 ,  B01J20/041 ,  B01J20/20 ,  B01J20/223 ,  B01J20/28004 ,  B01J20/2803 ,  B01J20/28066 ,  B01J20/3007 ,  B01J20/3014 ,  B01J20/3042 ,  B01J20/3204 ,  B01J20/3236 ,  B01J2220/42 ,  B01J2220/485 ,  B01J2220/58 ,  Y10S95/901

摘要： A cleaning agent and a cleaning process for efficiently removing noxious halogen-based gases such as fluorine, chlorine, boron trifluoride, boron trichloride and tungsten hexafluoride from exhaust gases from semiconductor fabrication processes. The cleaning agent is produced by adherently adding alkali metal formate and/or alkaline earth metal formate to activated carbon, or adherently adding alkali metal hydroxide and/or alkaline earth metal hydroxide together with alkali metal formate and/or alkaline earth metal formate to activated carbon. By exposing exhaust gases to the cleaning agent, noxious halogen-based gases in the exhaust gases are efficiently removed with little desorption of halogen-based gases adsorbed on the cleaning agent. Also, the cleaning treatment is further improved in safety and efficiency by a pre-treatment cleaning agent comprising a metal oxide or a metal hydroxide and a post-treatment cleaning agent prepared by adherently adding sodium formate to a metal oxide.

摘要翻译： 一种用于从半导体制造工艺的废气有效地除去有害的卤素基气体如氟，氯，三氟化硼，三氯化硼和六氟化钨的清洁剂和清洁方法。 清洁剂是通过将碱金属甲酸盐和/或碱土金属甲酸盐附着在活性炭上，或将碱金属氢氧化物和/或碱土金属氢氧化物与碱金属甲酸盐和/或碱土金属甲酸盐附着在活性炭上而制得的 。 通过将废气暴露于清洁剂中，废气中有害的卤素基气体被有效地去除，吸附在清洁剂上的卤素基气体很少被解吸。 此外，通过包含金属氧化物或金属氢氧化物的预处理清洁剂和通过将金属氧化物附着在甲酸钠中制备的后处理清洁剂进一步提高了清洁处理的安全性和效率。

公开(公告)号：US5436364A

公开(公告)日：1995-07-25

申请号：US263466

申请日：1994-06-22

申请人： Seiji Uchiyama ,  Hiroshi Machida ,  Rieko Nakano ,  Ryuji Hasemi

发明人： Seiji Uchiyama ,  Hiroshi Machida ,  Rieko Nakano ,  Ryuji Hasemi

IPC分类号： C07C67/08 ,  C07C69/76

CPC分类号： C07C67/08

摘要： A process for producing dimethyl 2,6-naphthalene-dicarboxylate by reacting 2,6-naphthalene-dicarboxylic acid with methanol which comprises effecting the reaction at 200.degree. to 350.degree. C. in the presence of trimethyl trimellitate as an essential solvent and optionally, at least one solvent selected from methyl benzoate, methyl toluate and dimethyl o-phthalate preferably by at least two-stage continuous reaction method. The above process is capable of enhancing the rate of esterification reaction and producing purified objective product in high yield for a long period of time in a stable operation without causing any operational trouble such as corrosion and clogging the production equipment.

摘要翻译： 2,6-萘二甲酸与甲醇的反应生产2,6-萘二甲酸二甲酯的方法，该方法包括在偏苯三酸三甲酯作为必需溶剂存在下，在200-350℃下进行反应， 至少一种选自苯甲酸甲酯，甲基甲酸甲酯和邻苯二甲酸二甲酯的溶剂优选通过至少两步连续反应方法。 上述方法能够在稳定的操作中长时间提高酯化反应速率和高产率纯化的目标产物，而不会引起任何操作故障，例如腐蚀和堵塞生产设备。