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    Crystal manufacturing apparatus
    3.
    发明授权
    Crystal manufacturing apparatus 有权
    水晶制造装置

    公开(公告)号：US09222199B2

    公开(公告)日：2015-12-29

    申请号：US12748515

    申请日：2010-03-29

    申请人： Seiji Sarayama ,  Hirokazu Iwata

    发明人： Seiji Sarayama ,  Hirokazu Iwata

    IPC分类号： C30B35/00 ,  C30B29/40 ,  C30B9/10

    CPC分类号： C30B29/403 ,  C30B9/10 ,  C30B29/406 ,  Y10S117/90 ,  Y10T117/10 ,  Y10T117/1016 ,  Y10T117/1024 ,  Y10T117/1064

    摘要： A crystal manufacturing apparatus for manufacturing a group III nitride crystal includes a crucible that holds a mixed molten liquid including an alkali metal and a group III metal; a reaction vessel accommodating the crucible in the reaction vessel; a heating device that heats the crucible with the reaction vessel; a holding vessel having a lid that is capable of opening and closing, accommodating the reaction vessel and the heating device in the holding vessel; a sealed vessel accommodating the holding vessel in the sealed vessel, having an operating device that enables opening the lid of the holding vessel for supplying source materials into the crucible and taking out a manufactured GaN crystal under a sealed condition, and closing the lid of the holding vessel that is sealed in the sealed vessel, the sealed vessel including an inert gas atmosphere or a nitrogen atmosphere; and a gas supplying device for supplying a nitrogen gas to the mixed molten liquid through each of the vessels.

    摘要翻译： 用于制造III族氮化物晶体的晶体制造装置包括：保持包含碱金属和III族金属的混合熔融液的坩埚; 将坩埚容纳在反应容器中的反应容器; 用反应容器加热坩埚的加热装置; 保持容器，其具有能够打开和关闭的盖子，将反应容器和加热装置容纳在容纳容器中; 容纳保持容器在密封容器中的密封容器，具有能够打开保持容器的盖以将源材料供应到坩埚中并在密封状态下取出制造的GaN晶体的操作装置，并且关闭盖 保持容器密封在密封容器中，密封容器包括惰性气体气氛或氮气氛; 以及用于通过每个容器向混合的熔融液体供给氮气的气体供给装置。

    Crystal preparing device, crystal preparing method, and crystal
    4.
    发明授权
    Crystal preparing device, crystal preparing method, and crystal 有权
    晶体制备装置，晶体制备方法和晶体

    公开(公告)号：US08475593B2

    公开(公告)日：2013-07-02

    申请号：US13170431

    申请日：2011-06-28

    申请人： Hirokazu Iwata ,  Seiji Sarayama ,  Akihiro Fuse

    发明人： Hirokazu Iwata ,  Seiji Sarayama ,  Akihiro Fuse

    IPC分类号： C30B9/00 ,  C30B11/00

    CPC分类号： C30B9/10 ,  C30B17/00 ,  C30B29/403 ,  C30B29/406 ,  Y10T117/1024

    摘要： In a crystal preparing device, a crucible holds a mixed molten metal containing alkali metal and group III metal. A container has a container space contacting the mixed molten metal and holds a molten alkali metal between the container space and an outside of the container, the molten alkali metal contacting the container space. A gas supply device supplies nitrogen gas to the container space. A heating device heats the crucible to a crystal growth temperature. The crystal preparing device is provided so that a vapor pressure of the alkali metal which evaporates from the molten alkali metal is substantially equal to a vapor pressure of the alkali metal which evaporates from the mixed molten metal.

    摘要翻译： 在晶体制备装置中，坩埚保持含有碱金属和III族金属的混合熔融金属。 容器具有与混合熔融金属接触的容器空间，并且在容器空间和容器外部之间保持熔融碱金属，熔融碱金属与容器空间接触。 气体供给装置向容器空间供给氮气。 加热装置将坩埚加热至晶体生长温度。 提供了晶体制备装置，使得从熔融碱金属蒸发的碱金属的蒸汽压基本上等于从混合的熔融金属蒸发的碱金属的蒸气压。

    Crystal growth apparatus and method of producing a crystal
    6.
    发明授权
    Crystal growth apparatus and method of producing a crystal 有权
    晶体生长装置及其制造方法

    公开(公告)号：US07462238B2

    公开(公告)日：2008-12-09

    申请号：US11498841

    申请日：2006-08-04

    申请人： Seiji Sarayama ,  Hirokazu Iwata ,  Akihiro Fuse ,  Kuniaki Ara ,  Junichi Saito

    发明人： Seiji Sarayama ,  Hirokazu Iwata ,  Akihiro Fuse ,  Kuniaki Ara ,  Junichi Saito

    IPC分类号： C30B25/14

    CPC分类号： C30B29/40 ,  C30B7/00 ,  C30B9/00 ,  Y10S117/90 ,  Y10T117/10 ,  Y10T117/1024

    摘要： A crystal growth apparatus comprises a reaction vessel holding a melt mixture containing an alkali metal and a group III metal in a vessel space thereof, a porous member holding a metal melt by a surface tension thereof in a path through which a vapor of the alkali metal in contact with the metal mixture in the vessel space escapes to an external space, the porous member further supplying a nitrogen source gas fed from outside thereto further to the reaction vessel therethrough and through the metal melt by a pressure difference formed between the vessel space in the reaction vessel and the external space, and a heating apparatus heating the melt mixture to a crystal growth temperature.

    摘要翻译： 晶体生长装置包括在其容器空间中容纳含有碱金属和III族金属的熔融混合物的反应容器，通过其表面张力将金属熔体保持在通过其中的碱金属的蒸汽的路径中的多孔构件 与容器空间中的金属混合物接触逃逸到外部空间，多孔构件进一步向外部供给来自反应容器的氮源气体，并通过金属熔体通过在容器空间之间形成的压力差 反应容器和外部空间，以及将熔融混合物加热至晶体生长温度的加热装置。

    Manufacturing Method and Manufacturing Apparatus of a Group III Nitride Crystal
    7.
    发明申请
    Manufacturing Method and Manufacturing Apparatus of a Group III Nitride Crystal 有权
    第III族氮化物晶体的制造方法和制造装置

    公开(公告)号：US20080264331A1

    公开(公告)日：2008-10-30

    申请号：US11596250

    申请日：2006-03-13

    申请人： Hirokazu Iwata ,  Seiji Sarayama ,  Minoru Fukuda ,  Tetsuya Takahashi ,  Akira Takahashi

    发明人： Hirokazu Iwata ,  Seiji Sarayama ,  Minoru Fukuda ,  Tetsuya Takahashi ,  Akira Takahashi

    IPC分类号： C30B15/00

    CPC分类号： C30B19/02 ,  C30B9/00 ,  C30B15/00 ,  C30B15/32 ,  C30B17/00 ,  C30B19/06 ,  C30B29/403 ,  C30B29/406 ,  Y10T117/1024 ,  Y10T117/1032

    摘要： A method for manufacturing a group III nitride crystal on a seed crystal in a holding vessel holding therein a melt containing a group III metal, an alkali metal and nitrogen. The manufacturing method comprises the steps of causing the seed crystal to make a contact with the melt, setting an environment of the seed crystal to a first state offset from a crystal growth condition while in a state in which said seed crystal is in contact with the melt, increasing a nitrogen concentration in the melt, and setting the environment of the seed crystal to a second state suitable for crystal growth when the nitrogen concentration of the melt has reached a concentration suitable for growing the seed crystal.

    摘要翻译： 一种用于在保持容器中的晶种上制造III族氮化物晶体的方法，其中容纳含有III族金属，碱金属和氮的熔体。 该制造方法包括以下步骤：使晶种与熔体接触，将晶种的环境设定为偏离晶体生长条件的第一状态，同时在所述晶种与所述晶种接触的状态下 熔融，增加熔体中的氮浓度，并且当熔体的氮浓度达到适于种植晶种的浓度时，将晶种的环境设定为适合晶体生长的第二状态。

    Crystal growth apparatus and method of producing a crystal
    9.
    发明申请
    Crystal growth apparatus and method of producing a crystal 有权
    晶体生长装置及其制造方法

    公开(公告)号：US20070034143A1

    公开(公告)日：2007-02-15

    申请号：US11498841

    申请日：2006-08-04

    申请人： Seiji Sarayama ,  Hirokazu Iwata ,  Akihiro Fuse ,  Kuniaki Ara ,  Junichi Saito

    发明人： Seiji Sarayama ,  Hirokazu Iwata ,  Akihiro Fuse ,  Kuniaki Ara ,  Junichi Saito

    IPC分类号： C30B7/00 ,  C30B21/02 ,  C30B23/00 ,  C30B28/14 ,  C30B25/00 ,  C30B28/06 ,  C30B28/12

    CPC分类号： C30B29/40 ,  C30B7/00 ,  C30B9/00 ,  Y10S117/90 ,  Y10T117/10 ,  Y10T117/1024

    摘要： A crystal growth apparatus comprises a reaction vessel holding a melt mixture containing an alkali metal and a group III metal in a vessel space thereof, a porous member holding a metal melt by a surface tension thereof in a path through which a vapor of the alkali metal in contact with the metal mixture in the vessel space escapes to an external space, the porous member further supplying a nitrogen source gas fed from outside thereto further to the reaction vessel therethrough and through the metal melt by a pressure difference formed between the vessel space in the reaction vessel and the external space, and a heating apparatus heating the melt mixture to a crystal growth temperature.

    摘要翻译： 晶体生长装置包括在其容器空间中容纳含有碱金属和III族金属的熔融混合物的反应容器，通过其表面张力将金属熔体保持在通过其中的碱金属的蒸汽的路径中的多孔构件 与容器空间中的金属混合物接触逃逸到外部空间，多孔构件进一步向外部供给来自反应容器的氮源气体，并通过金属熔体通过在容器空间之间形成的压力差 反应容器和外部空间，以及将熔融混合物加热至晶体生长温度的加热装置。