公开(公告)号：US20090283715A1

公开(公告)日：2009-11-19

申请号：US12307341

申请日：2007-07-03

申请人： Shigeru Nobe ,  Takashi Shinoda ,  Takafumi Sakurada ,  Takaaki Tanaka ,  Yoshikazu Oomori ,  Tadahiro Kimura ,  Masato Fukasawa

发明人： Shigeru Nobe ,  Takashi Shinoda ,  Takafumi Sakurada ,  Takaaki Tanaka ,  Yoshikazu Oomori ,  Tadahiro Kimura ,  Masato Fukasawa

IPC分类号： C09G1/02

CPC分类号： C09G1/02 ,  C09K3/1463 ,  H01L21/3212

摘要： The invention relates to a polishing slurry for CMP containing abrasive and a fang and seam restrainer, wherein the fang and seam restrainer is at least one selected from polycarboxylic acids, polycarboxylic acid derivatives, or carboxylic-acid-containing copolymers. According to this, provided is a polishing slurry for CMP which restrains a fang phenomenon or a seam phenomenon that an insulated film near wiring regions is excessively polished, thereby giving a high flatness to a polished face.

摘要翻译： 本发明涉及一种用于CMP的研磨浆料，其含有研磨剂和防皱和接缝抑制剂，其中，所述方针和接缝限制器是选自多元羧酸，多元羧酸衍生物或含羧酸的共聚物中的至少一种。 据此，提供了抑制了布线区域附近的绝缘膜被过度抛光从而赋予抛光面的高平坦度的限制现象的CMP现象的研磨浆料。

公开(公告)号：US20070117394A1

公开(公告)日：2007-05-24

申请号：US11545787

申请日：2006-10-11

申请人： Takashi Shinoda ,  Shigeru Nobe ,  Takafumi Sakurada ,  Yoshikazu Oomori ,  Tadahiro Kimura

发明人： Takashi Shinoda ,  Shigeru Nobe ,  Takafumi Sakurada ,  Yoshikazu Oomori ,  Tadahiro Kimura

IPC分类号： H01L21/66 ,  H01L21/461

CPC分类号： C09G1/02 ,  C23F3/04 ,  H01L21/30625 ,  H01L21/31055 ,  H01L21/3212 ,  H01L21/32125 ,  H01L21/7684 ,  H01L21/76865

摘要： The invention provides polishing slurry for CMP for suppressing corrosion of wiring lines of a conductive substance, or for suppressing bimetallic corrosion of a barrier conductor and conductive substance, by suppressing electrons from being transferred at near the boundaries between a barrier conductor and a conductive substance such as copper. The invention provides polishing slurry for CMP for polishing at least a conductor layer and a conductive substance layer in contact with the conductor layer, wherein the absolute value of the potential difference between the conductive substance and the conductor at 50±5° C. is 0.25 V or less in the polishing slurry when a positive electrode and a negative electrode of a potentiometer are connected to the conductive substance and the conductor, respectively. The polishing slurry for CMP preferably comprises at least one compound selected from heterocyclic compounds containing any one of hydroxyl group, carbonyl group, carboxyl group, amino group, amide group and sulfinyl group, and containing at least one of nitrogen and sulfur atoms.

摘要翻译： 本发明提供了通过抑制电子在阻挡导体和导电物质之间的边界附近转移而抑制导电物质的布线的腐蚀或抑制阻挡导体和导电物质的双金属腐蚀的CMP抛光浆料，例如 作为铜。 本发明提供了用于CMP的抛光浆料，用于至少对与导体层接触的导体层和导电物质层进行抛光，其中在50±5℃下导电物质与导体之间的电位差的绝对值为0.25 当电位计的正电极和负电极分别连接到导电物质和导体时，抛光浆料中的V或更小。 用于CMP的抛光浆料优选包含至少一种选自含有羟基，羰基，羧基，氨基，酰胺基和亚磺酰基中的任何一种的杂环化合物并且含有氮和硫原子中的至少一个的化合物。