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    Compound semiconductor multilayer structure and bipolar transistor using the same
    3.
    发明授权
    Compound semiconductor multilayer structure and bipolar transistor using the same 失效
    复合半导体多层结构和使用其的双极晶体管

    公开(公告)号：US06876013B2

    公开(公告)日：2005-04-05

    申请号：US10363315

    申请日：2001-08-31

    申请人： Taichi Okano ,  Takashi Udagawa

    发明人： Taichi Okano ,  Takashi Udagawa

    IPC分类号： C30B25/02 ,  H01L29/15 ,  H01L29/207 ,  H01L29/737

    CPC分类号： C30B25/02 ,  C30B29/40 ,  H01L29/155 ,  H01L29/207 ,  H01L29/7371

    摘要： A compound semiconductor multilayer structure comprising a carbon-containing p-type gallium arsenide (GaAs)-system crystal layer, wherein the carbon-containing p-type GaAs-system crystal layer exhibits a predominant photoluminescence peak measured at 20K within a range of 828 nm to 845 nm, and wherein the ratio of hydrogen atom concentration to carbon atom concentration in the carbon-containing p-type GaAs crystal layer is 1/5 or less. Furthermore, in a photoluminescence measurement at 10K, the carbon-containing GaAs-system p-type crystal layer exhibits a first predominant photoluminescence peak and a second predominant photoluminescence peak due to band gap transitions of GaAs and wherein the second predominant luminescence wavelength has a longer wavelength than the first predominant photoluminescence wavelength and the intensity ratio of the second luminescence peak to the first luminescence peak is within a range from 0.5 to 3.

    摘要翻译： 包含含碳p型砷化镓（GaAs）系晶体层的化合物半导体多层结构，其中含碳p型GaAs系晶体层在20K范围内在828nm范围内显示出主要的光致发光峰 至845nm，并且其中所述含碳p型GaAs晶体层中的氢原子浓度与碳原子浓度的比率为1/5以下。 此外，在10K的光致发光测量中，由于GaAs的带隙跃迁，含碳GaAs系统p型晶体层表现出第一主要的光致发光峰和第二主要的光致发光峰，并且其中第二主要发光波长具有更长的 波长比第一主要光致发光波长和第二发光峰与第一发光峰的强度比在0.5至3的范围内。

    Method of manufacturing semiconductor device, semiconductor device, and semiconductor apparatus
    4.
    发明授权
    Method of manufacturing semiconductor device, semiconductor device, and semiconductor apparatus 有权
    制造半导体器件，半导体器件和半导体器件的方法

    公开(公告)号：US08679882B2

    公开(公告)日：2014-03-25

    申请号：US13144159

    申请日：2010-01-13

    申请人： Taichi Okano

    发明人： Taichi Okano

    IPC分类号： H01L21/00

    CPC分类号： H01L29/1608 ,  H01L21/0485 ,  H01L21/268 ,  H01L29/66143 ,  H01L29/872

    摘要： There is provided a method of manufacturing a semiconductor device, a semiconductor device, and a semiconductor apparatus, by which an electrode having an excellent ohmic property can be formed, and a semiconductor device having excellent device characteristics can be obtained with a high product yield. The method sequentially includes: a semiconductor device structure formation process in which a semiconductor device structure 3 is formed at least in a main surface 2a side of a first conduction type silicon carbide bulk substrate 2 having a main surface 2a and a rear surface 2b; and an ohmic electrode formation process in which an ohmic electrode 4 making ohmic contact with the silicon carbide bulk substrate 2 is formed in the rear surface 2b side of the silicon carbide bulk substrate 2, wherein the ohmic electrode formation process sequentially includes a sub-process of thinning the silicon carbide bulk substrate 2 by polishing the rear surface side 2b of the silicon carbide bulk substrate 2 and then forming the ohmic electrode 4 in the rear surface 2b, and a sub-process of performing heat treatment using an optical heating method in which high-power light is irradiated from the rear surface side 2b of the silicon carbide bulk substrate 2 to the ohmic electrode 4.

    摘要翻译： 提供一种制造半导体器件，半导体器件和半导体器件的方法，通过该方法可以形成具有优异欧姆特性的电极，并且可以以高产品产率获得具有优异器件特性的半导体器件。 该方法顺序地包括：半导体器件结构形成工艺，其中半导体器件结构3至少形成在具有主表面2a和后表面2b的第一导电型碳化硅本体衬底2的主表面2a侧; 以及欧姆电极形成工艺，其中在碳化硅本体衬底2的后表面2b侧形成与碳化硅本体衬底2形成欧姆接触的欧姆电极4，其中欧姆电极形成工艺依次包括子工艺 通过研磨碳化硅本体基板2的后表面侧2b，然后在后表面2b中形成欧姆电极4来使碳化硅本体基板2变薄，以及使用光学加热方法进行热处理的子工艺 哪个高功率光从碳化硅块体基板2的后表面侧2b照射到欧姆电极4。

    METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR APPARATUS
    5.
    发明申请
    METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR APPARATUS 有权
    制造半导体器件，半导体器件和半导体器件的方法

    公开(公告)号：US20110272711A1

    公开(公告)日：2011-11-10

    申请号：US13144159

    申请日：2010-01-13

    申请人： Taichi Okano

    发明人： Taichi Okano

    IPC分类号： H01L29/161 ,  H01L21/20 ,  H01L21/28

    CPC分类号： H01L29/1608 ,  H01L21/0485 ,  H01L21/268 ,  H01L29/66143 ,  H01L29/872

    摘要： There is provided a method of manufacturing a semiconductor device, a semiconductor device, and a semiconductor apparatus, by which an electrode having an excellent ohmic property can be formed, and a semiconductor device having excellent device characteristics can be obtained with a high product yield. The method sequentially includes: a semiconductor device structure formation process in which a semiconductor device structure 3 is formed at least in a main surface 2a side of a first conduction type silicon carbide bulk substrate 2 having a main surface 2a and a rear surface 2b; and an ohmic electrode formation process in which an ohmic electrode 4 making ohmic contact with the silicon carbide bulk substrate 2 is formed in the rear surface 2b side of the silicon carbide bulk substrate 2, wherein the ohmic electrode formation process sequentially includes a sub-process of thinning the silicon carbide bulk substrate 2 by polishing the rear surface side 2b of the silicon carbide bulk substrate 2 and then forming the ohmic electrode 4 in the rear surface 2b, and a sub-process of performing heat treatment using an optical heating method in which high-power light is irradiated from the rear surface side 2b of the silicon carbide bulk substrate 2 to the ohmic electrode 4.

    摘要翻译： 提供一种制造半导体器件，半导体器件和半导体器件的方法，通过该方法可以形成具有优异欧姆特性的电极，并且可以以高产品产率获得具有优异器件特性的半导体器件。 该方法顺序地包括：半导体器件结构形成工艺，其中半导体器件结构3至少形成在具有主表面2a和后表面2b的第一导电型碳化硅本体衬底2的主表面2a侧; 以及欧姆电极形成工艺，其中在碳化硅本体衬底2的后表面2b侧形成与碳化硅本体衬底2形成欧姆接触的欧姆电极4，其中欧姆电极形成工艺依次包括子工艺 通过研磨碳化硅本体基板2的后表面侧2b，然后在后表面2b中形成欧姆电极4来使碳化硅本体基板2变薄，以及使用光学加热方法进行热处理的子工艺 哪个高功率光从碳化硅块体基板2的后表面侧2b照射到欧姆电极4。