Polycarbonate resin
    1.
    发明授权
    Polycarbonate resin 有权
    聚碳酸酯树脂

    公开(公告)号:US07202323B2

    公开(公告)日:2007-04-10

    申请号:US10820808

    申请日:2004-04-09

    IPC分类号: C08G65/38

    CPC分类号: C08G64/06

    摘要: A polycarbonate resin with a polystyrene-converted weight average molecular weight (Mw) of 20,000 to 200,000 obtained by forming a carbonate bond from a dihydroxy compound represented by the general formula (1), a dihydroxy compound represented by the general formula (2) and bis(hydroxyphenyl) methane and a carbonic acid diester or phosgene, having higher stiffness and better balance of mechanical properties than conventional aromatic polycarbonate resin to be derived from 2,2-bis(4-hydroxyphenyl)propane.

    摘要翻译: 通过由通式(1)表示的二羟基化合物形成碳酸酯键,由通式(2)表示的二羟基化合物和通式(2)表示的二羟基化合物和通式(2)表示的聚碳酸酯树脂,其聚苯乙烯换算的重均分子量(Mw)为20,000〜 双(羟基苯基)甲烷和碳酸二酯或光气,具有比从2,2-双(4-羟基苯基)丙烷衍生的常规芳族聚碳酸酯树脂更高的刚度和更好的机械性能平衡。

    Process for producing low-dust-level polycarbonate molded article
    2.
    发明授权
    Process for producing low-dust-level polycarbonate molded article 失效
    生产低级聚碳酸酯模制品的方法

    公开(公告)号:US5073313A

    公开(公告)日:1991-12-17

    申请号:US557236

    申请日:1990-07-25

    摘要: A process for producing a polycarbonate molded article having a low dust level from a polycarbonate resin in the form of a powder or pellets by injection molding using an injection molding machine. The injection molding machine includes a cylinder whose inner circumferential wall is made of a corrosion- and abrasion-resistant alloy from alloy components (1), (2), or (3) given below and a screw part made of a steel having a metal coating formed of hard chromium plating or hard nickel plating or formed of titanium carbide or tungsten carbide, or is made of SUS420, SUS440, Hastelloy C, or a steel of alloy component (4) given below:Alloy components (1):C: 0.5-1.5 wt%Si: 1.0-2.0 wt%B: 0.5-2.5 wt%Ni: 10.0-20.0 wt%Cr: 20.0-30.0 wt%W: 10.0-20.0 wt%Cu: 0.5-2.0 wt%Remainder: Co and unavoidable impurities,Alloy components (2):Ni: 0.0-2.0 wt%Cr: 5.0-15.0 wt%Fe: 0.0-1.0 wt%Mn: 0.1-2.0 wt%Si: 0.2-4.0 wt%B: 2.0-4.0 wt%Remainder: Co and unavoidable impurities,Alloy components (3):Cr: 5.0-10.0 wt%Co: 5.0-40.0 wt%Fe: 0.0-10.1 wt%Mn: 0.2-2.0 wt%Si: 2.0-10.0 wt%B: 2.0-4.0 wt%Reaminder: Ni and unavoidable impurities,Alloy components (4):C: 0.5-1.5 wt%Cr: 10.0-20.0 wt%Mo: 1.5-2.5 wt%V: 0.5-1.5 wt%Remainder: Fe and unavoidable impurities.

    Gas-barrier multilayered structure
    3.
    发明授权
    Gas-barrier multilayered structure 失效
    气体阻隔多层结构

    公开(公告)号:US4908272A

    公开(公告)日:1990-03-13

    申请号:US186080

    申请日:1988-04-25

    IPC分类号: B32B27/34 C08G69/26 C08L77/00

    摘要: A gas-barrier multilayered structure comprising (A) at least one layer of a copolyamide composed of (a) a dicarboxylic acid component composed of 55 to 70 mole % of an aliphatic dicarboxylic acid component and 45 to 30 mole % of an aromatic dicarboxylic acid component consisting substantially of 20 to 30 mole % of isophthalic acid and 5 to 20 mole % of terephthalic acid, and (b) a diamine component composed substantially of a m-xylylenediamine component, and (B) at least one layer of a thermoplastic resin other than the copolyamide. Instead of the layer (A), there can be used (A') at least one layer of a mixture of 40 to 60 % by weight of a first copolyamide composed of (a) a dicarboxylic acid component composed of 55 to 70 mole % of an aliphatic dicarboxylic acid component and 45 to 30 mole % of an aromatic dicarboxylic acid component consisting substantially of 20 to 30 mole % of isophthalic acid and 5 to 20 mole % of terephthalic acid and (b) a diamine component composed substantially of m-xylylenediamine and 60 to 40 % by weight of a second polyamide composed of a dicarboxylic acid component consisting substantially of an aliphthalic dicarboxylic acid component and a diamine component consisting substantially of a m-xylylenediamine component.

    Grinding chip
    6.
    发明授权
    Grinding chip 失效
    研磨芯片

    公开(公告)号:US06322433B1

    公开(公告)日:2001-11-27

    申请号:US09509057

    申请日:2000-03-20

    申请人: Makoto Matsumura

    发明人: Makoto Matsumura

    IPC分类号: B24B1900

    摘要: A polishing chip has its outer shape substantially the same as that of a semiconductor device, and is arranged to be mounted and dismounted to and from a semiconductor-device receiving socket (11) installed in a testing apparatus for evaluation of semiconductor devices. Distal end portions (15b) of contact pins (15) of the socket are brought in contact with an abrasive layer (22) formed in distal end portions of the polishing chip mounted to the socket, whereby distal ends of the contact pins are polished to remove foreign substances therefrom.

    摘要翻译: 抛光用芯片的外形与半导体装置的外形大致相同,并且被配置为安装和拆卸安装在用于评估半导体装置的测试装置中的半导体装置接收插座(11)。 插座的接触销(15)的远端部分(15b)与形成在安装到插座上的抛光芯片的远端部分中的研磨层(22)接触,从而将接触针的顶端抛光到 从中除去异物。